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41. 发明授权

US08253125B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08253125B2
公开(公告)日：2012-08-28
申请号：US12275536
申请日：2008-11-21
申请人： Ho Sun Paek , Sung Nam Lee , Ten Sakong , Youn Joon Sung , In Hoe Hur
发明人： Ho Sun Paek , Sung Nam Lee , Ten Sakong , Youn Joon Sung , In Hoe Hur
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/12 , H01L33/16
摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法。根据本发明的一个方面的制造氮化物半导体发光器件的方法可以包括：氮化m面蓝宝石衬底的表面; 在m面蓝宝石衬底上形成高温缓冲层; 在高温缓冲层上沉积半极（11-22）面氮化物薄膜; 以及在所述半极性（11-22）面氮化物薄膜上形成包括第一氮化物半导体层，有源层和第二氮化物半导体层的发光结构。

42. 发明申请

US20110300654A1 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20110300654A1
公开(公告)日：2011-12-08
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L33/36
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

43. 发明授权

US07790584B2 Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same 有权
标题翻译：生长半极性氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法
公开(公告)号：US07790584B2
公开(公告)日：2010-09-07
申请号：US12246594
申请日：2008-10-07
申请人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
发明人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
IPC分类号： H01L21/36
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01L33/16
摘要： A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要翻译：生长半极性氮化物单晶薄膜的方法。该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层，在半极化氮化物单晶基底层上形成电介质图案层，并生长半极化氮化物单晶薄膜在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜，使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面，并且在横向上二次生长半极性氮化物单晶薄膜，使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有（1122）面。

44. 发明授权

US07687374B2 Method of isolating semiconductor laser diodes 失效
标题翻译：隔离半导体激光二极管的方法
公开(公告)号：US07687374B2
公开(公告)日：2010-03-30
申请号：US12149313
申请日：2008-04-30
申请人： Youn Joon Sung , Su Hee Chae
发明人： Youn Joon Sung , Su Hee Chae
IPC分类号： H01L21/00
CPC分类号： H01S5/0201 , H01S5/0203
摘要： Provided is a method of isolating semiconductor laser diodes (LDs), the method including the steps of: preparing a substrate; forming a plurality of semiconductor LDs on the substrate, each semiconductor LD including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-electrode, a ridge portion, and a p-electrode, the ridge portion being formed by etching the p-type semiconductor layer such that a portion of the p-type semiconductor layer protrudes, the p-electrode being formed on the ridge portion; partially forming base cut lines on the surface of the substrate excluding the ridge portions; and isolating the semiconductor LDs into a bar shape along the base cut lines.
摘要翻译：提供一种隔离半导体激光二极管（LD）的方法，该方法包括以下步骤：制备衬底; 在基板上形成多个半导体LD，每个半导体LD包括n型半导体层，有源层，p型半导体层，n电极，脊部分和p电极，脊部分通过蚀刻p型半导体层而形成，使得p型半导体层的一部分突出，p电极形成在脊部上; 在除了脊部之外的基板的表面上部分地形成基切割线; 并且将半导体LD沿基底切割线隔离成棒状。

45. 发明授权

US07655959B2 Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
标题翻译：具有纹理结构的半导体发光器件及其制造方法
公开(公告)号：US07655959B2
公开(公告)日：2010-02-02
申请号：US11293273
申请日：2005-12-05
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek
IPC分类号： H01L21/00
CPC分类号： H01L33/12 , H01L33/007 , H01L33/025 , H01L33/20 , H01L33/22
摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要翻译：提供具有纹理结构的半导体发光二极管及其制造方法。半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层第一半导体层和中间层。

46. 发明授权

US07642561B2 Semiconductor light emitting diode having efficiency and method of manufacturing the same 有权
标题翻译：具有效率的半导体发光二极管及其制造方法
公开(公告)号：US07642561B2
公开(公告)日：2010-01-05
申请号：US11294403
申请日：2005-12-06
申请人： Jeong-wook Lee , Youn-joon Sung
发明人： Jeong-wook Lee , Youn-joon Sung
IPC分类号： H01L29/22
CPC分类号： H01L33/22 , H01L33/007 , H01L33/12
摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.
摘要翻译：提供了一种在基板上形成纹理结构的半导体发光二极管。在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。

47. 发明申请

US20090298214A1 METHOD OF GROWING NITRIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：生长氮化物单晶的方法及制造氮化物半导体发光装置的方法
公开(公告)号：US20090298214A1
公开(公告)日：2009-12-03
申请号：US12263873
申请日：2008-11-03
申请人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
发明人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L33/08 , H01L33/12
摘要： There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.
摘要翻译：提供了生长氮化物单晶的方法。根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

48. 发明申请

US20090181484A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090181484A1
公开(公告)日：2009-07-16
申请号：US12407361
申请日：2009-03-19
申请人： Jeong-wook LEE , Youn-joon SUNG , Ho-sun PAEK , Hyun-soo KIM , Joo-sung KIM , Suk-ho YOON
发明人： Jeong-wook LEE , Youn-joon SUNG , Ho-sun PAEK , Hyun-soo KIM , Joo-sung KIM , Suk-ho YOON
IPC分类号： H01L21/28
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/12 , H01L33/22
摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
摘要翻译：提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。光输出效率增加，半导体发光器件的内部缺陷减小。

49. 发明申请

US20080123696A1 Semiconductor laser device having scattering portion and method of fabricating the device 审中-公开
标题翻译：具有散射部的半导体激光装置及其制造方法
公开(公告)号：US20080123696A1
公开(公告)日：2008-05-29
申请号：US11898577
申请日：2007-09-13
申请人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
发明人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
IPC分类号： H01S3/10 , H01L21/00
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/2004 , H01S5/3211 , H01S5/32341 , H01S2301/18
摘要： Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such, the semiconductor laser device may emit higher quality laser light.
摘要翻译：本发明提供一种半导体激光装置，其包括基板，发光结构，其包括依次层叠在基板上的第一包层，有源层和第二包层，以及形成在基板的底面上的散射部，以便散光因此，半导体激光装置可以发射更高质量的激光。

50. 发明申请

US20070145386A1 Semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070145386A1
公开(公告)日：2007-06-28
申请号：US11705736
申请日：2007-02-14
申请人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
发明人： Jeong-wook Lee , Youn-joon Sung , Ho-sun Paek , Hyun-soo Kim , Joo-sung Kim , Suk-ho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02494 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L33/12 , H01L33/22
摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.
摘要翻译：提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。光输出效率增加，半导体发光器件的内部缺陷减小。

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