会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明授权
    • High purity cobalt sputter target and process of manufacturing the same
    • 高纯钴溅射靶及其制造工艺相同
    • US06585866B2
    • 2003-07-01
    • US10104582
    • 2002-03-21
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • C22C1907
    • C22C19/07C22F1/10C23C14/3414
    • A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-351 from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.
    • 公开了一种高纯度钴溅射靶,其包含面心立方(fcc)相和六方密堆积(hcp)相,其中X射线衍射峰强度Ifcc(200)/ Ihcp(10 1)小于通过从熔融的高温将fcc钴冷却至室温而获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm,Ni含量不超过200ppm,Fe,Al和Cr含量不大于50ppm,Na和K小于0.5 ppm。 所公开的溅射靶是通过对材料进行冷加工处理(小于4221℃)来制造的。 在300-4221℃的温度范围内将材料退火几个小时,在冷加工处理之间显着增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形,使得(0002)hcp平面从目标法线倾斜10-351。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。
    • 46. 发明授权
    • Control of surface carbides in steel strip
    • 控制钢带中的表面碳化物
    • US5795410A
    • 1998-08-18
    • US788092
    • 1997-01-23
    • Yinshi Liu
    • Yinshi Liu
    • C21D8/02C22C38/18
    • C21D8/0273C21D2211/003
    • A method is provided for reducing the size and area coverage of surface carbides formed during the box annealing of steel strip. In one aspect the method includes providing a casting consisting essentially of, by weight percent, 0.08% max. carbon, 1.0% max. manganese, 0.06% max. aluminum, up to 0.1% max. chromium, up to 0.1% max. titanium, up to 0.1% max. niobium and up to 0.1% max. vanadium. The casting is hot rolled to strip and then cold rolled. After cold rolling the strip is box annealed at a temperature above the A.sub.1 temperature. The strip is cooled from the A.sub.1 temperature such that the rate of cooling is at least 30.degree. C./hour through the range of from about 727.degree. C. to about 700.degree. C. In another aspect the invention includes casting a steel of the aforementioned composition wherein the vanadium is at least 0.015%. The invention includes steel products made according to the methods just described.
    • 提供了一种减小钢带箱退火时形成的表面碳化物的尺寸和面积的方法。 在一个方面,该方法包括提供基本上由以重量%计最大0.08%的铸件。 碳,最大1.0% 锰,0.06%以上。 铝,最高可达0.1%。 铬,最高可达0.1%。 钛,最高可达0.1%。 铌,最高可达0.1%。 钒。 将铸件热轧成带状,然后冷轧。 在冷轧后,将带材在高于A1温度的温度下进行盒退火。 条带从A1温度冷却,使得冷却速率在约727℃至约700℃的范围内至少为30℃/小时。另一方面,本发明包括将 上述组合物,其中钒至少为0.015%。 本发明包括根据上述方法制造的钢制品。