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41. 发明授权

US07693361B2 Hybrid laser diode 有权
标题翻译：混合激光二极管
公开(公告)号：US07693361B2
公开(公告)日：2010-04-06
申请号：US12117710
申请日：2008-05-08
申请人： Young-Ahn Leem , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
发明人： Young-Ahn Leem , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
IPC分类号： G02B6/00
CPC分类号： G02B6/12004 , G02B2006/12121 , G02B2006/12152 , H01S5/021 , H01S5/0215 , H01S5/0218 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/32316 , H01S5/32333
摘要： Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
摘要翻译：提供了一种混合式激光二极管。混合激光二极管包括：构成平板波导的硅层; 以及配置在硅层上以构成沟道波导的化合物半导体层。

42. 发明申请

US20090154871A1 SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING GRATING COUPLER FOR OPTICAL COMMUNICATION AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：半导体集成电路，包括用于光通信的光栅耦合器及其形成方法
公开(公告)号：US20090154871A1
公开(公告)日：2009-06-18
申请号：US12117708
申请日：2008-05-08
申请人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
发明人： Junghyung PYO , O-Kyun Kwon , Gyungock Kim
IPC分类号： G02B6/12 , H01L21/02
CPC分类号： G02B6/34 , G02B6/124 , G02B6/30
摘要： Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.
摘要翻译：提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

43. 发明申请

US20090116523A1 HYBRID LASER DIODE 有权
标题翻译：混合激光二极管
公开(公告)号：US20090116523A1
公开(公告)日：2009-05-07
申请号：US12117710
申请日：2008-05-08
申请人： Young-Ahn LEEM , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
发明人： Young-Ahn LEEM , Jung-Ho Song , Ki-Soo Kim , O-Kyun Kwon , Gyung-Ock Kim
IPC分类号： H01S5/00
CPC分类号： G02B6/12004 , G02B2006/12121 , G02B2006/12152 , H01S5/021 , H01S5/0215 , H01S5/0218 , H01S5/026 , H01S5/1014 , H01S5/1032 , H01S5/32316 , H01S5/32333
摘要： Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.
摘要翻译：提供了一种混合激光二极管。混合激光二极管包括：构成平板波导的硅层; 以及配置在硅层上以构成沟道波导的化合物半导体层。

44. 发明授权

US06989312B2 Method for fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06989312B2
公开(公告)日：2006-01-24
申请号：US10800680
申请日：2004-03-16
申请人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
发明人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
IPC分类号： H01L21/20
CPC分类号： H01S5/18341 , H01S5/02461 , H01S5/18305 , H01S5/18308 , H01S5/18363
摘要： Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
摘要翻译：提供一种制造半导体光学器件的方法，该半导体光学器件可以用作反射半导体镜或光学滤波器，其中具有不同蚀刻速率的两种或更多种类型的半导体层被交替堆叠，至少一种类型的半导体层是选择性的蚀刻以形成气隙结构，并且沉积具有良好传热特性的氧化物或氮化物，从而使气隙被埋入，由此可以有效地实现具有高反射率的半导体反射器或滤光器这是由于在空气间隙和半导体层中埋入的氧化物或氮化物之间的大的折射率造成的对比度小的周期。

45. 发明授权

US6069353A Polymer photodetector having resonant wavelength control function 失效
标题翻译：具有谐振波长控制功能的聚合物光电探测器
公开(公告)号：US6069353A
公开(公告)日：2000-05-30
申请号：US904653
申请日：1997-08-01
申请人： Sang-Don Jung , O-Kyun Kwon , Tae-Hyoung Zyung
发明人： Sang-Don Jung , O-Kyun Kwon , Tae-Hyoung Zyung
IPC分类号： H01L31/0216 , H01L51/42 , H01L31/0248
CPC分类号： H01L31/02165 , H01L27/305 , H01L51/42
摘要： A polymer photodetector includes a resonant wavelength controller which resonates an optical beam with a particular wavelength only from the incident optical beam received thereinto through the rear surface of the reflection layer, so as to selectively detect the optical beam with the particular wavelength. The resonant wavelength controller includes a fixed mirror layer, a movable mirror layer, and an air layer disposed therebetween. The resonant wavelength can be adjusted by varying an optical length between the movable mirror layer and the fixed mirror layer. The optical length can be adjusted by varying the thickness of the air layer between the movable mirror layer and the fixed mirror layer by way of adjusting the electrostatic force.
摘要翻译：聚合物光电检测器包括谐振波长控制器，其谐振具有特定波长的光束仅从其中接收的入射光束通过反射层的后表面谐振，以便选择性地检测具有特定波长的光束。谐振波长控制器包括固定镜层，可移动镜层和设置在其间的空气层。可以通过改变可移动镜层和固定镜层之间的光学长度来调节谐振波长。可以通过调节静电力来改变可移动镜层和固定镜层之间的空气层的厚度来调节光学长度。

46. 发明授权

US5488231A Metal/semiconductor junction Schottky diode optical device using a distortion grown layer 失效
标题翻译：金属/半导体结肖特基二极管光器件使用失真生长层
公开(公告)号：US5488231A
公开(公告)日：1996-01-30
申请号：US352628
申请日：1994-12-09
申请人： O-Kyun Kwon , Young-Wan Choi , El-Hang Lee
发明人： O-Kyun Kwon , Young-Wan Choi , El-Hang Lee
IPC分类号： H01L29/47 , G02F1/015 , G02F3/00 , G02F3/02 , H01L29/12 , H01L29/872 , H01L31/0352 , H01L31/10 , H01L31/108 , H01L27/14 , H01L31/00
CPC分类号： H01L31/0352 , H01L31/108
摘要： A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.
摘要翻译：描述了使用失真生长层的金属/半导体结肖特基二极管光学器件。在半绝缘GaAs衬底上周期性地生长多个GaAs反射镜和AlAs镜层。在GaAs反射镜和AlAs镜面层上形成n +或p +半导体层。在半导体层上形成GaAs缓冲层，以生长用作电极和反射镜的肖特基金属层。具有电光吸收特性的多量子阱结构位于半导体层和肖特基金属层之间，用于构造具有金属层/多量子阱结构的二极管。镜面层和二极管的至少一部分形成有一层，以便在金属层和镜层之间具有共振和非共振条件。形成有二极管的基板具有由光学非反射层形成的相对侧。

47. 发明授权

US09042686B2 Optical waveguide platform with hybrid-integrated optical transmission device and optical active device and method of manufacturing the same 有权
标题翻译：具有混合集成光传输装置和光学有源装置的光波导平台及其制造方法
公开(公告)号：US09042686B2
公开(公告)日：2015-05-26
申请号：US13487807
申请日：2012-06-04
申请人： Hyun Soo Kim , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
发明人： Hyun Soo Kim , Jong Sool Jeong , Mi-Ran Park , Byungseok Choi , O-Kyun Kwon
IPC分类号： G02B6/12 , G02B6/26 , G02B6/42 , G02B6/10 , G02B6/43 , G02B6/122
CPC分类号： G02B6/43 , G02B6/12004 , G02B6/1228 , G02B6/4224 , G02B6/4232
摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.
摘要翻译：公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

48. 发明授权

US08937980B2 Distributed feedback-laser diodes 有权
标题翻译：分布式反馈激光二极管
公开(公告)号：US08937980B2
公开(公告)日：2015-01-20
申请号：US13614280
申请日：2012-09-13
申请人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
发明人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：提供分布式反馈激光二极管。分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

49. 发明授权

US08428091B2 Tunable laser module 有权
标题翻译：可调激光模块
公开(公告)号：US08428091B2
公开(公告)日：2013-04-23
申请号：US12973481
申请日：2010-12-20
申请人： Mi-Ran Park , O-Kyun Kwon , Byung-seok Choi , Dae Kon Oh
发明人： Mi-Ran Park , O-Kyun Kwon , Byung-seok Choi , Dae Kon Oh
IPC分类号： H01S3/10 , H01S3/04 , H01S5/00
CPC分类号： H01S5/423 , H01S5/0085 , H01S5/02415 , H01S5/18341 , H01S5/18358 , H01S5/4012 , H01S5/4087 , H01S5/50
摘要： Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.
摘要翻译：提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置激光器阵列的一侧与温度控制器相对。

50. 发明申请

US20120281274A1 SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20120281274A1
公开(公告)日：2012-11-08
申请号：US13307067
申请日：2011-11-30
申请人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
发明人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
IPC分类号： H01S5/20 , H01L21/04
CPC分类号： H01S5/1028 , H01S5/0265 , H01S5/0425 , H01S5/1003 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S2301/16
摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.
摘要翻译：半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

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