专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06238752B1 Diamino compounds, polyamic acids, polyimides, liquid crystal aligning films using said polyimide films and liquid crystal display devices using said aligning films 有权
标题翻译：二氨基化合物，聚酰胺酸，聚酰亚胺，使用所述聚酰亚胺膜的液晶取向膜和使用所述取向膜的液晶显示装置
公开(公告)号：US06238752B1
公开(公告)日：2001-05-29
申请号：US09403597
申请日：1999-10-22
申请人： Takashi Kato , Nobuyuki Otsuka , Shizuo Murata , Hideo Sato
发明人： Takashi Kato , Nobuyuki Otsuka , Shizuo Murata , Hideo Sato
IPC分类号： G02F11337
CPC分类号： C07D207/452 , C09K19/42 , C09K19/46 , G02F1/133723 , Y10T428/1014 , Y10T428/1023 , Y10T428/1027 , Y10T428/31721
摘要： This invention relates to a diamino compound represented by the formula [1]: in which G1 is a trivalent organic group of 2-20 carbon atoms, G2 is independently a single bond, —COO—, —OCO—, —NHCO—, —CONH—, —O—, —O—, or —CO—, G3 is a single bond or an alkylene group of 1-20 carbon atoms, X and Y are each independently a hydrogen atom, a fluorine atom, a chlorine atom, a cyano group, a nitro group, or an alkyl group, a haloalkyl group, an alkoxy group or a haloalkoxy group, each alkyl or alkoxy group having 1-12 carbon atoms, or a cycloalkyl group of 3-8 carbon atoms or a trans-4-alkylcyclohexyl group of 9-14 carbon atoms, and m is an integer of 0-3; a polyamic acid and polyimide using the said diamino compound, an aligning film using the said polyimide and a liquid crystal display device using the said aligning film. The aligning film is prepared by irradiation of a polarized ultraviolet light to the polyimide film.
摘要翻译：本发明涉及由式[1]表示的二氨基化合物：其中G1是2-20个碳原子的三价有机基团，G2独立地是单键，-COO-，-OCO-，-NHCO-， - CONH-，-O-，-O-或-CO-，G3为1-20个碳原子的单键或亚烷基，X和Y各自独立地为氢原子，氟原子，氯原子，氰基，硝基或烷基，卤代烷基，烷氧基或卤代烷氧基，每个烷基或烷氧基具有1-12个碳原子，或环烷基3-8个碳原子或反式 4-烷基环己基，m为0-3的整数; 使用所述二氨基化合物的聚酰胺酸和聚酰亚胺，使用所述聚酰亚胺的取向膜和使用所述取向膜的液晶显示装置。通过将偏振紫外光照射到聚酰亚胺膜来制备取向膜。

42. 发明授权

US6107112A Distributed feedback semiconductor laser and method for producing the same 失效
公开(公告)号：US6107112A
公开(公告)日：2000-08-22
申请号：US414756
申请日：1999-10-07
申请人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
发明人： Masahiro Kito , Masato Ishino , Nobuyuki Otsuka , Yasushi Matsui , Shinji Nakamura
IPC分类号： H01L21/205 , H01S5/026 , H01S5/0625 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/0265 , H01S5/12 , H01S5/1228 , H01S5/125 , H01S5/06256 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/34306 , H01S5/3434 , H01S5/34373
摘要： In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

43. 发明授权

US5960257A Method distributed feedback semiconductor laser for fabricating 失效
标题翻译：制造分布式反馈半导体激光器的方法
公开(公告)号：US5960257A
公开(公告)日：1999-09-28
申请号：US933707
申请日：1997-09-19
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，其设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

44. 发明授权

US5652762A Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法及应变量子阱晶体及其制造方法
公开(公告)号：US5652762A
公开(公告)日：1997-07-29
申请号：US520021
申请日：1995-08-28
申请人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
IPC分类号： H01L33/00 , H01L33/06 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0062 , H01L33/06 , H01S5/32 , H01S5/3207 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.
摘要翻译：本发明的半导体激光器件包括：包括阱层和阻挡层的应变量子阱结构，以及用于支撑应变量子阱结构的半导体衬底。在半导体激光器件中，阱层和阻挡层中的至少一个由产生原子排列的混晶构成。

45. 发明授权

US5568501A Semiconductor laser and method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5568501A
公开(公告)日：1996-10-22
申请号：US331939
申请日：1994-10-31
申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
IPC分类号： H01L29/15 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01L29/155 , H01S5/227 , H01S5/2205 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34313 , H01S5/3434 , Y10S148/095
摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
摘要翻译：本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

46. 发明授权

US5539766A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5539766A
公开(公告)日：1996-07-23
申请号：US293987
申请日：1994-08-18
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34 , H01S3/08
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

47. 发明授权

US5319657A Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof 失效
标题翻译：具有阻止掺杂剂分散的阻塞的调制掺杂量子阱结构的半导体激光器及其制造方法
公开(公告)号：US5319657A
公开(公告)日：1994-06-07
申请号：US957786
申请日：1992-10-08
申请人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kito , Masato Ishino , Yasushi Matsui
IPC分类号： H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/34 , H01S5/3054 , H01S5/309 , H01S5/3403 , H01S5/3407 , H01S5/34306 , H01S5/34313
摘要： The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.
摘要翻译：半导体激光器包括Sn掺杂的InP衬底1，n-InGaAsP波导层2，5nm厚的InGaAs阱层3,3.5nm厚的未掺杂InGaAsP层4,3nm厚的p-InGaAsP调制掺杂层5，3.5nm厚的未掺杂 InGaAsP层6，具有10个阱的调制掺杂量子阱层7，90nm厚的p-InGaAsP层8，p-InP包覆层9（Zn = 7×10 17 cm -3），pnp电流阻挡层10和台面形Au / Sn电极12，如果通过气相沉积形成Au / Zn p电极13以完成激光结构。

48. 发明授权

US5311534A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US5311534A
公开(公告)日：1994-05-10
申请号：US81014
申请日：1993-06-22
申请人： Yoshihiro Mori , Nobuyuki Otsuka
发明人： Yoshihiro Mori , Nobuyuki Otsuka
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/2004 , H01S5/2206 , H01S5/2227 , H01S5/2228 , H01S5/2275 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device emits a stable and extremely high optical output. An etching-stop layer is formed at the interface between an active layer and a waveguide layer underlying the active layer, or in a waveguide layer, the layers above the etching-stop layer is processed in a stripe-shaped mesa. Subsequently, a current-blocking layer comprising thin layers of different conductivity type is formed above the etching-stop layer, the thickness of the etching-stop layer being so thin as not to distort the optical intensity distribution of laser light. Alternatively, an active layer and clad layers overlying and underlying the active layer is formed, and a current-blocking layer comprising thin layers of different composition which are alternatively stacked is formed. The conductivity type of the thin layers is reversed at least once during consecutive stacking, and the equivalent refractive index is larger than that of a semiconductor substrate and smaller than that of the mesa.
摘要翻译：半导体激光器件发出稳定且极高的光输出。在有源层和有源层下面的波导层之间的界面处形成蚀刻停止层，或者在波导层中，蚀刻停止层上方的层被处理成条状台面。随后，在蚀刻停止层上方形成包含不同导电类型的薄层的电流阻挡层，蚀刻停止层的厚度非常薄，使得不会使激光的光强度分布变形。或者，形成覆盖有源层的有源层和覆盖层，并且形成包含交替层叠的不同组成的薄层的电流阻挡层。在连续堆叠期间，薄层的导电类型至少反转一次，并且等效折射率大于半导体衬底的折射率，并且小于台面的等效折射率。

49. 发明授权

US4494941A Constant velocity universal joint 失效
标题翻译：恒速万向节
公开(公告)号：US4494941A
公开(公告)日：1985-01-22
申请号：US370076
申请日：1982-04-20
申请人： Seiichi Hirai , Nobuyuki Otsuka
发明人： Seiichi Hirai , Nobuyuki Otsuka
IPC分类号： F16D3/20 , F16D3/2245 , F16D3/24
CPC分类号： F16D3/2245 , Y10S464/906
摘要： A constant velocity universal joint comprising an outer member having an inner spherical surface and an inner member fitted in the outer member and having an outer spherical surface facing the inner spherical surface of the outer member. The inner and outer members are adapted for relative angular travel about the center of the joint. A cage member is interposed between the inner and outer members and has an outer spherical surface facing the inner spherical surface of the outer member and an inner spherical surface facing the outer spherical surface of the inner member. The cage member carries balls in windows which project outwardly for engagement in respective opposed ball grooves in the inner and outer members. The mutually facing spherical surfaces of the outer member and the cage member are slightly eccentric with respect to one another so that a gap formed between the two spherical surfaces gradually decreases towards one end of the joint and the surfaces come into contact in a first contact zone, while the mutually facing spherical surfaces of the inner member and the cage member are slightly eccentric with respect to one from another so that a second gap formed between these two spherical surfaces decreases gradually towards the other end of the joint and these surfaces come into contact at a second contact zone. The first and second contact zones of the cage respectively with said outer and inner members maintain the cage in axial position in the joint.
摘要翻译：一种等速万向接头，包括具有内球面的外部构件和装配在外部构件中的内部构件，并且具有面向外部构件的内部球形表面的外球面。内部和外部构件适于围绕接头的中心的相对角行进。笼构件设置在内构件和外构件之间，并且具有面向外构件的内球面的外球面和与内构件的外球面相对的内球面。保持架构件在向外伸出的窗口中承载球，用于接合在内部和外部构件中的相应的相对的球槽中。外部构件和保持构件的相互面对的球面相对于彼此稍微偏心，使得形成在两个球形表面之间的间隙朝向接头的一端逐渐减小，并且表面在第一接触区域而内部构件和保持架构件的相互面对的球形表面相对于彼此稍微偏心，使得形成在这两个球形表面之间的第二间隙朝向接头的另一端逐渐减小，并且这些表面接触在第二接触区。保持架的第一和第二接触区域分别与所述外部和内部构件将保持架保持在接头中的轴向位置。

50. 发明授权

US4379706A Slidable-type constant velocity universal joint 失效
标题翻译：滑动式等速万向节
公开(公告)号：US4379706A
公开(公告)日：1983-04-12
申请号：US214289
申请日：1980-12-08
申请人： Nobuyuki Otsuka , Seiichi Hirai
发明人： Nobuyuki Otsuka , Seiichi Hirai
IPC分类号： F16D3/20 , F16D3/205
CPC分类号： F16D3/2055 , F16D2003/2026 , Y10S464/905
摘要： A slidable type constant velocity universal joint comprising an outer member formed with at least three axially extending guide grooves disposed in parallel to one another, and an inner member disposed inside the outer member and provided with at least three radially extending pods projecting therefrom, the respective pods being in engagement, via respective rollers mounted thereon so as to be rotatable and slidable, within the respective guide grooves. The respective rollers are so mounted on the respective pods so as to be, additionally, tiltable in all directions so that the rollers will always be in longitudinally aligned relation in the guide grooves. Each pod is formed with an outer surface with curved generatrices and the surface can be, for example, a spherical surface of comparatively large curvature, and each roller can be formed with an inner surface supported on the pod surface via suitable bearings or guide rings for undergoing universal movement thereon.
摘要翻译：一种滑动式等速万向接头，包括形成有彼此平行设置的至少三个轴向延伸的引导槽的外部构件，以及设置在所述外部构件内部并且设置有从其突出的至少三个径向延伸的舱的内部构件，通过安装在其上的各个辊可以旋转和滑动地在相应的导向槽内接合。相应的辊子安装在相应的容器上，以便另外可以在所有方向上倾斜，使得辊子将在引导槽中总是处于纵向对齐的关系。每个荚形成有具有弯曲母线的外表面，并且该表面可以是例如具有相当大曲率的球形表面，并且每个辊可以形成有通过合适的轴承或导向环支撑在荚表面上的内表面，用于在其上经历普遍的运动。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式