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41. 发明申请

US20110292365A1 Calibration Method, Inspection Method and Apparatus, Lithographic Apparatus, and Lithographic Processing Cell 有权
标题翻译：校准方法，检验方法和装置，平版印刷设备和平版印刷加工单元
公开(公告)号：US20110292365A1
公开(公告)日：2011-12-01
申请号：US13132011
申请日：2009-12-01
申请人： Hugo Augustinus Joseph Cramer , Maurits Van Der Schaar
发明人： Hugo Augustinus Joseph Cramer , Maurits Van Der Schaar
IPC分类号： G03B27/54 , G01N21/00
CPC分类号： G03F7/70633 , G01N21/4785 , G03F7/70516 , G03F7/70616 , G03F7/70625
摘要： Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.
摘要翻译：公开了用于校准检查装置的方法，装置和光刻系统。辐射被投影到基板的目标位置的图案上。通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数，可以计算指示散射仪中的误差的残差。该误差是由散射仪的不规则引起的衬底参数的测量误差。残余误差可能表现为衍射光谱中的不对称性。

42. 发明申请

US20110255066A1 Apparatus and Method for Inspecting a Substrate 有权
标题翻译：用于检查基板的装置和方法
公开(公告)号：US20110255066A1
公开(公告)日：2011-10-20
申请号：US12996211
申请日：2009-06-04
申请人： Andreas Fuchs , Maurits Van Der Schaar
发明人： Andreas Fuchs , Maurits Van Der Schaar
IPC分类号： G03B27/74 , G03B27/32 , G01B11/14
CPC分类号： G03F7/70633
摘要： An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (−d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.
摘要翻译：一种装置测量分成多个场的衬底的性质，例如覆盖误差。该装置包括被配置为将辐射引导到衬底的每个场的第一靶上的辐射源。每个第一目标（T4G）具有至少第一光栅和具有相应预定偏移的第二光栅，第一光栅的预定偏移（+ d）在与第二光栅的预定偏移（-d）相反的方向上。检测器被配置为检测从每个第一目标反射的辐射，并且从检测到的辐射获得每个第一目标的不对称值。此外，模块被配置为基于至少所获得的不对称值和预定偏移来确定每个第一目标的覆盖值，并且确定跨越衬底的相应多个场的多个第一目标的多项式拟合，以获得关系在获得的不对称值和确定的每个第一目标的覆盖值之间。

43. 发明申请

US20110229830A1 Inspection Method For Lithography 有权
标题翻译：光刻检验方法
公开(公告)号：US20110229830A1
公开(公告)日：2011-09-22
申请号：US13060390
申请日：2009-09-08
申请人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
发明人： Kaustuve Bhattacharyya , Arie Jeffrey Den Boef , Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar
IPC分类号： G03F7/20 , G01N21/55 , G01B11/14 , G03B27/54
CPC分类号： G03F7/70633 , G03F7/70625
摘要： The present invention relates to an inspection apparatus and method which include projecting a measurement radiation beam onto a target on a substrate in order to measure the radiation reflected from the target and obtain information related to properties of the substrate. In the present embodiments, the measurement spot, which is the focused beam on the substrate, is larger than the target. Information regarding the radiation reflected from the target is kept and information regarding the radiation reflected from the surface around the target is eliminated. This is done either by having no reflecting (or no specularly reflecting) surfaces around the target or by having known structures around the target, the information from which may be recognized and removed from the total reflected beam. The reflected beam is measured in the pupil plane of the projector such that the information obtained is related to diffraction orders of the reflected beam and profile, critical dimension or overlay of structures on the substrate may be determined.
摘要翻译：本发明涉及一种检查装置和方法，其包括将测量辐射束投射到基板上的目标上，以便测量从目标反射的辐射，并获得与基板的特性有关的信息。在本实施例中，作为基板上的聚焦光束的测量点大于目标。关于从目标反射的辐射的信息被保留，并且关于从目标周围的表面反射的辐射的信息被消除。这可以通过在靶周围没有反射（或没有镜面反射）表面或通过在靶周围具有已知结构来完成，可以从总反射光束识别和去除信息。在投影仪的瞳平面中测量反射光束，使得所获得的信息与反射光束的衍射级和轮廓，基底上的结构的临界尺寸或重叠相关。

44. 发明申请

US20110141444A1 Inspection Apparatus for Lithography 有权
标题翻译：光刻检验仪
公开(公告)号：US20110141444A1
公开(公告)日：2011-06-16
申请号：US12933481
申请日：2009-04-08
申请人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
发明人： Marcus Adrianus Van De Kerkhof , Antoine Gaston Marie Kiers , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Scott Anderson Middlebrooks , Andreas Fuchs
IPC分类号： G03B27/54 , G01N21/55
CPC分类号： G03F7/70616 , G01N21/47 , G01N21/9501
摘要： A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.
摘要翻译：配置成测量衬底性质的散射仪包括被配置为提供辐射束的辐射源; 以及检测器，其被配置为检测从所述基板（W）的表面上的目标（30）反射的所述辐射束的光谱，并产生表示所述光谱的测量信号。该装置包括插入在辐射源和检测器之间的辐射路径中的光束整形器（51,53），光束整形器被配置为根据目标的形状和/或尺寸来调节光束的横截面。

45. 发明申请

US20110134419A1 Inspection Method and Apparatus, and Corresponding Lithographic Apparatus 有权
标题翻译：检验方法和装置，以及相应的平版印刷设备
公开(公告)号：US20110134419A1
公开(公告)日：2011-06-09
申请号：US12902341
申请日：2010-10-12
申请人： Andreas FUCHS , Maurits VAN DER SCHAAR , Scott Anderson MIDDLEBROOKS , Panagiotis Pieter BINTEVINOS
发明人： Andreas FUCHS , Maurits VAN DER SCHAAR , Scott Anderson MIDDLEBROOKS , Panagiotis Pieter BINTEVINOS
IPC分类号： G01N21/956
CPC分类号： G03F7/70633 , G01N21/956
摘要： A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.
摘要翻译：方法和相关设备确定衬底上的覆盖误差。光束投影到三个或更多个目标上。每个目标包括在衬底上具有预定覆盖偏移的第一和第二重叠图案。测量从基板上的每个目标反射的辐射的不对称性。确定不是从预定的覆盖偏移产生的覆盖误差。通过限制从功能确定覆盖误差时线性误差的影响，可以确定能够计算晶片上其他点不对称的叠加的功能。

46. 发明申请

US20110122496A1 Substrate Used in a Method and Apparatus for Angular-Resolved Spectroscopic Lithography Characterization 有权
标题翻译：用于角度分辨光谱光刻表征的方法和装置中的底物
公开(公告)号：US20110122496A1
公开(公告)日：2011-05-26
申请号：US13010424
申请日：2011-01-20
申请人： Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF , Everhardus Cornelis MOS , Stefan Carolus Jacobus Antonius KEIJ
发明人： Maurits VAN DER SCHAAR , Arie Jeffrey DEN BOEF , Everhardus Cornelis MOS , Stefan Carolus Jacobus Antonius KEIJ
IPC分类号： G02B5/18
CPC分类号： G03F9/7076 , G03F7/70633
摘要： A substrate includes an overlay target. The overlay target can include two superposed layers. Each of the two superposed layers includes two gratings with a different pitch from each other.
摘要翻译：衬底包括覆盖目标。覆盖目标可以包括两个叠加层。两个叠加层中的每一个包括彼此具有不同间距的两个光栅。

47. 发明授权

US07916276B2 Lithographic apparatus and device manufacturing method with double exposure overlay control 有权
公开(公告)号：US07916276B2
公开(公告)日：2011-03-29
申请号：US12705050
申请日：2010-02-12
申请人： Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren
发明人： Maurits Van Der Schaar , Richard Johannes Franciscus Van Haren
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.

48. 发明授权

US07898662B2 Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
标题翻译：用于角分辨光谱光刻特征的方法和装置
公开(公告)号：US07898662B2
公开(公告)日：2011-03-01
申请号：US11455942
申请日：2006-06-20
申请人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos , Stefan Carolus Jacobus Antonius Keij
发明人： Maurits Van Der Schaar , Arie Jeffrey Den Boef , Everhardus Cornelis Mos , Stefan Carolus Jacobus Antonius Keij
IPC分类号： G01B11/00
CPC分类号： G03F9/7076 , G03F7/70633
摘要： An overlay target on a substrate includes two sets of gratings; the first set having a pitch P1 and the second set having a pitch P2 and each set including a grating with an orientation substantially perpendicular to the first grating of each set. When a layer of resist is to be aligned with the layer below it, the same overlay marks are provided on the upper layer and the relative positions of the overlay targets on the upper layer and the lower layer are compared by shining an overlay beam on to the overlay targets and measuring the diffraction spectrum of the reflected beam. Having two sets of overlay targets with different pitches in gratings enables the measurement of overlay errors that are greater than the pitch of either one of the overlay gratings.
摘要翻译：衬底上的覆盖目标包括两组光栅; 第一组具有节距P1，第二组具有节距P2，并且每组包括具有大致垂直于每组的第一光栅的取向的光栅。当抗蚀剂层与其下面的层对准时，在上层上提供相同的覆盖标记，并且通过将覆盖光束照射到上层和下层来比较覆盖目标在上层和下层上的相对位置覆盖目标并测量反射光束的衍射光谱。在光栅中具有两组具有不同间距的覆盖目标使得可以测量大于叠加光栅中的任一个的间距的重叠误差。

49. 发明授权

US07897058B2 Device manufacturing method and computer program product 有权
标题翻译：设备制造方法和计算机程序产品
公开(公告)号：US07897058B2
公开(公告)日：2011-03-01
申请号：US11435296
申请日：2006-05-17
申请人： Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar , Ewoud Vreugdenhil , Harry Sewell
发明人： Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar , Ewoud Vreugdenhil , Harry Sewell
IPC分类号： C23F1/00 , G06F19/00 , B44C1/22 , G01L21/30
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.
摘要翻译：形成特征的方法，例如以比常规光刻技术更高的密度接触孔包括形成牺牲性特征阵列，从而保形地沉积牺牲层，使得负特征与正特征交错形成，定向蚀刻牺牲层并去除牺牲特征。结果是以比原始牺牲特征更高的密度的孔阵列。然后可以使用所需的方法将这些物质转移到下面的基底中。此外，可以重复该方法以以更高的密度创建阵列。

50. 发明申请

US20100284008A1 Method of Determining Overlay Error and a Device Manufacturing Method 有权
标题翻译：确定覆盖误差的方法和器件制造方法
公开(公告)号：US20100284008A1
公开(公告)日：2010-11-11
申请号：US12760784
申请日：2010-04-15
申请人： Willem Marie Julia Marcel COENE , Karel Diederick VAN DER MAST , Maurits VAN DER SCHAAR
发明人： Willem Marie Julia Marcel COENE , Karel Diederick VAN DER MAST , Maurits VAN DER SCHAAR
IPC分类号： G01B11/00 , G03F7/20
CPC分类号： G03F7/70633
摘要： A method of determining an overlay error in which asymmetry of a first order of a diffraction pattern is modeled as being a weighted sum of harmonics. Both the first order harmonic and higher order harmonics are non-negligible and weights for both are calculated. The weights are calculated using three or more of sets of superimposed patterns using a least mean square method.
摘要翻译：一种确定重叠误差的方法，其中衍射图案的一阶的不对称性被建模为加权和谐和。一阶谐波和高次谐波都不可忽略，两者的权重都被计算出来。使用最小均方法，使用三个或更多个叠加图案来计算权重。

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