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41. 发明申请

US20100163712A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20100163712A1
公开(公告)日：2010-07-01
申请号：US12720554
申请日：2010-03-09
申请人： Makoto INAGAKI , Yoshiyuki Matsunaga
发明人： Makoto INAGAKI , Yoshiyuki Matsunaga
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

42. 发明授权

US07714920B2 Solid-state imaging device driving method 有权
标题翻译：固态成像装置驱动方法
公开(公告)号：US07714920B2
公开(公告)日：2010-05-11
申请号：US12071090
申请日：2008-02-15
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译：感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。具体地说，通过使低电位电位（VddC_L）高于当向复位晶体管（5）施加低电平时获得的沟道电位，或者当低电平施加到传输门（2）时获得的沟道电位，或读取光电二极管（1）的通道电位，读出低噪声的再现图像。

43. 发明授权

US07696543B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07696543B2
公开(公告)日：2010-04-13
申请号：US11396485
申请日：2006-04-04
申请人： Makoto Inagaki , Yoshiyuki Matsunaga
发明人： Makoto Inagaki , Yoshiyuki Matsunaga
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译：在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。为了在行方向上连接，仅使用多晶硅线。

44. 发明申请

US20090322924A1 SOLID-STATE IMAGING DEVICE DRIVING METHOD 有权
标题翻译：固态成像装置驱动方法
公开(公告)号：US20090322924A1
公开(公告)日：2009-12-31
申请号：US12536814
申请日：2009-08-06
申请人： Makoto INAGAKI , Yoshiyuki Matsunaga
发明人： Makoto INAGAKI , Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译：感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。具体地说，通过使低电位电位（VddC_L）高于向复位晶体管（5）施加低电平时获得的沟道电位，或者当向传输门（2）施加低电平时获得的沟道电位，或读取光电二极管（1）的通道电位，读出低噪声的再现图像。

45. 发明申请

US20080231733A1 Amplification Type Solid State Imaging Device 有权
标题翻译：放大型固态成像装置
公开(公告)号：US20080231733A1
公开(公告)日：2008-09-25
申请号：US11568565
申请日：2005-07-27
申请人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
发明人： Takashi Fujioka , Masayuki Masuyama , Makoto Inagaki
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译：使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部分10的上部，以便限制光进入像素的光电转换部分10a以外的部分。此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。

46. 发明授权

US06765246B2 Solid-state imaging device with multiple impurity regions and method for manufacturing the same 有权
标题翻译：具有多个杂质区的固态成像装置及其制造方法
公开(公告)号：US06765246B2
公开(公告)日：2004-07-20
申请号：US10226375
申请日：2002-08-21
申请人： Makoto Inagaki
发明人： Makoto Inagaki
IPC分类号： H01L27148
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14643 , H01L27/14806 , H01L27/14887
摘要： The solid-state imaging device according to one embodiment of the present invention includes a semiconductor substrate, a plurality of photoelectric conversion regions arrayed in the vertical direction and the horizontal direction on the surface of the substrate, and an electric charge transfer region disposed between the photoelectric conversion regions adjacent in the horizontal direction of the substrate. The substrate comprises a n-type semiconductor substrate, a first p-type impurity region formed on the n-type semiconductor substrate, a semiconductor regions formed on the first p-type impurity region, and a second p-type impurity region disposed below the electric charge transfer region. The photoelectric conversion region and the electric charge transfer region are n-type impurity regions formed on the surface portion of the semiconductor region. A third p-type impurity region is formed in at least one region selected from the group consisting of a region located between the photoelectric conversion regions adjacent in the vertical direction and a region located below the second p-type impurity region between the photoelectric conversion regions adjacent in the horizontal direction in the semiconductor region.
摘要翻译：根据本发明的一个实施例的固态成像装置包括半导体衬底，在衬底的表面上沿垂直方向和水平方向排列的多个光电转换区域，以及设置在衬底之间的电荷转移区域在基板的水平方向上相邻的光电转换区域。基板包括n型半导体基板，形成在n型半导体基板上的第一p型杂质区域，形成在第一p型杂质区域上的半导体区域和设置在第一p型杂质区域的第二p型杂质区域电荷转移区域。光电转换区域和电荷转移区域是形成在半导体区域的表面部分上的n型杂质区域。在选自由垂直方向相邻的光电转换区域和位于光电转换区域之间的第二p型杂质区域下方的区域中的至少一个区域中形成第三p型杂质区域在半导体区域中在水平方向上相邻。

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