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    • 41. 发明授权
    • Organic light emitting display device and manufacturing method thereof
    • 有机发光显示装置及其制造方法
    • US08558239B2
    • 2013-10-15
    • US12904672
    • 2010-10-14
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • H01L27/14
    • H01L27/3262H01L27/3258
    • An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.
    • 一种有机发光显示器,其具有形成在基板上的薄膜晶体管的有源层,形成在所述有源层的边缘的第一导电层,形成在所述基板上的第一绝缘层和所述第一导电层,第二导电层 对应于形成在第一绝缘层上的有源层的中心区域,与第二导电层分隔预定距离的扇出下电极,像素电极,形成在第二导电层上的第三导电层,形成的扇出上电极 在扇出的下电极上,形成在第三导电层,扇出上电极和像素电极上的第二绝缘层,以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。
    • 42. 发明授权
    • Organic light emitting display apparatus and method of manufacturing the same
    • 有机发光显示装置及其制造方法
    • US08395160B2
    • 2013-03-12
    • US12943886
    • 2010-11-10
    • Sun ParkChun-Gi YouJong-Hyun ParkJin-Hee KangYul-Kyu Lee
    • Sun ParkChun-Gi YouJong-Hyun ParkJin-Hee KangYul-Kyu Lee
    • H01L27/14H01L29/04H01L29/15H01L31/036
    • H01L51/5215H01L27/3248
    • An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.
    • 一种有机发光显示装置和制造有机发光显示装置的方法,由此简化了制造工艺,并提高了有机发光显示装置的电特性。 有机发光显示装置包括:栅电极,其包括第一导电层,包括ITO,第一导电层上的第二导电层,第二导电层上的第三导电层,包括ITO;以及第四导电层, 第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极,并且包括包括ITO的第一电极层,在第一电极层上的第二电极层,在第二电极层上的包括ITO的第三电极层,以及第四电极层 电极层,并且包括IZO或AZO。
    • 44. 发明申请
    • ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    • 有机发光显示装置及其制造方法
    • US20110121302A1
    • 2011-05-26
    • US12954544
    • 2010-11-24
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • Yul-Kyu LeeChun-Gi YouSun ParkJong-Hyun ParkJin-Hee Kang
    • H01L51/50H01L51/40
    • H01L27/3262
    • An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
    • 公开了一种具有简化的制造工艺和改进的电气特性的有机发光显示装置,以及制造该装置的方法。 该装置包括:具有显示区域和非显示区域的基板; 在显示区域中的薄膜晶体管(TFT); 非显示区域中的布线部分; 电连接到TFT并包括有机发光层的中间层; 和中间层上的对电极。 TFT包括有源层,栅电极和电连接到有源层的源/漏电极。 源极/漏极包括依次堆叠的第一导电层,第二导电层和第三导电层。 布线部分包括与第一导电层相同的材料。 源/漏电极中的一个比另一个长,用作像素电极,并且电连接到中间层。
    • 46. 发明申请
    • THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    • 薄膜晶体管及其制造方法
    • US20110084276A1
    • 2011-04-14
    • US12753732
    • 2010-04-02
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • Jin-Hee KANGChun-Gi YOUSun PARKJong-Hyun PARKYul-Kyu LEE
    • H01L29/786H01L21/336
    • H01L29/78609H01L29/78618
    • A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
    • 公开了一种薄膜晶体管(TFT)及其制造方法。 TFT包括衬底,设置在衬底上的栅电极,设置在栅电极上的栅极绝缘层,设置在栅极绝缘层上方并包括多晶硅(poly-Si)层的半导体层,设置的欧姆接触层 超过半导体层的预定区域,设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层,以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此,当控制底栅型TFT的截止电流时,可以通过简单的处理来防止由漏电流引起的特性的劣化。