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41. 发明授权

US07605014B2 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US07605014B2
公开(公告)日：2009-10-20
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

42. 发明授权

US07528371B2 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US07528371B2
公开(公告)日：2009-05-05
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G01N23/00
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

43. 发明申请

US20080225678A1 FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME 失效
标题翻译：电磁记录介质及其相关的书写方法
公开(公告)号：US20080225678A1
公开(公告)日：2008-09-18
申请号：US12128788
申请日：2008-05-29
申请人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

44. 发明授权

US07419843B2 Method of manufacturing semiconductor probe having resistive tip 失效
标题翻译：制造具有电阻尖端的半导体探针的方法
公开(公告)号：US07419843B2
公开(公告)日：2008-09-02
申请号：US11212605
申请日：2005-08-29
申请人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
发明人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G01Q70/10 , G01Q70/16
摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
摘要翻译：一种制造具有电阻尖端的半导体探针的方法。该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

45. 发明授权

US07406020B2 Method of writing data on a storage device using a probe technique 有权
标题翻译：使用探针技术在存储设备上写入数据的方法
公开(公告)号：US07406020B2
公开(公告)日：2008-07-29
申请号：US10934561
申请日：2004-09-07
申请人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
发明人： Seung-bum Hong , Sung-dong Kim , Ju-hwan Jung , Dong-ki Min , Hong-sik Park , Kyoung-lock Baeck , Chul-min Park , Yun-seok Kim
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B9/02 , G11B9/14 , G11B9/1409 , G11B9/149 , G11B13/00 , G11B2005/0021
摘要： A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
摘要翻译：使用探针技术在存储装置上写入数据的方法。在包括用于读取和写入数据的电阻式探头的存储器件中写入数据的方法中，由电阻式探头写入数据的铁电写入介质和设置在铁电书写介质的底表面上的下电极通过向电阻式探针和下部电极施加电压，同时将热和电场同时施加到写入数据的铁电写入介质的区域。

46. 发明申请

US20070137780A1 Method of fabricating micro actuator having media stage 失效
标题翻译：具有介质载物台的微型致动器的制造方法
公开(公告)号：US20070137780A1
公开(公告)日：2007-06-21
申请号：US11595876
申请日：2006-11-13
申请人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
发明人： Hong-sik Park , Seung-bum Hong , Jong-youp Shim
IPC分类号： B32B37/00
CPC分类号： H02K41/0354 , B81B3/0062 , B81B2201/038 , B81B2201/11 , B81B2203/051 , B82Y10/00 , G11B9/1436 , H02K2201/18
摘要： A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
摘要翻译：提供了一种制造微型致动器的方法，包括：介质台，其具有介质装载表面和用于驱动介质载物台的线圈，其形成在介质载台的相对表面上至介质装载表面。该方法包括在第一基板的第一表面上形成凹槽，在第二基板的第一表面上形成线圈，将第一基板的第一表面接合到第二基板的第一表面，并且形成介质装载表面在第二基板的与第二基板的第一表面相对的第二表面上。

47. 发明申请

US20070042522A1 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US20070042522A1
公开(公告)日：2007-02-22
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

48. 发明申请

US20070040116A1 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US20070040116A1
公开(公告)日：2007-02-22
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G12B21/02
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

49. 发明申请

US20060145806A1 Magnetic logic device and methods of manufacturing and operating the same 有权
公开(公告)号：US20060145806A1
公开(公告)日：2006-07-06
申请号：US11320898
申请日：2005-12-30
申请人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
发明人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
IPC分类号： H01F5/00
CPC分类号： H03K19/16 , H01L43/08
摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

50. 发明申请

US20060060779A1 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060060779A1
公开(公告)日：2006-03-23
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：具有电阻尖端的半导体探针及其制造方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

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