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41. 发明申请

US20090243008A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090243008A1
公开(公告)日：2009-10-01
申请号：US12409716
申请日：2009-03-24
申请人： Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
发明人： Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}a1/2−a2|/a2
摘要翻译：磁阻元件包括具有在（001）面取向的立方或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构，设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，nu是第一磁性层的弹性模量第一磁性层，hc是第一磁性层的厚度。 <？in-line-formula description =“In-line Formulas”end =“lead”？> |√{square root over（2）} a1 / 2-a2 | / a2

42. 发明申请

US20080231998A1 MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME 有权
标题翻译：使用磁阻效应器件和磁性随机存取存储器
公开(公告)号：US20080231998A1
公开(公告)日：2008-09-25
申请号：US11858386
申请日：2007-09-20
申请人： Masatoshi YOSHIKAWA , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi YOSHIKAWA , Tadashi Kai , Toshihiko Nagase , Eiji Kitagawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , G11C11/16
摘要： A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0
摘要翻译：磁阻效应元件包括具有基本上固定的磁化方向的磁化固定层。磁化变化层具有可变的磁化方向，由具有BCC结构并由Fe 1-xy N x Ni x Y y表示的磁性合金组成，（0 <= x + y <= 1,0,0 <= x <= 1,0 <= y <= 1），并且包含至少一种V，Cr和Mn的添加元素，其范围为0

43. 发明申请

US20070086121A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20070086121A1
公开(公告)日：2007-04-19
申请号：US11534440
申请日：2006-09-22
申请人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≧Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0> = Ms <√{平方根超过（{Jw /（6nAt.Jw是写入电流密度， t是自由度的厚度层，A是常数。

44. 发明授权

US08879307B2 Magnetoresistive device and nonvolatile memory with the same 有权
标题翻译：磁阻器件与非易失性存储器相同
公开(公告)号：US08879307B2
公开(公告)日：2014-11-04
申请号：US13424769
申请日：2012-03-20
申请人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
发明人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
IPC分类号： G11C11/00 , G11C11/16 , G11C19/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

45. 发明授权

US08849625B2 Distributed process simulator 有权
标题翻译：分布式流程模拟器
公开(公告)号：US08849625B2
公开(公告)日：2014-09-30
申请号：US13367837
申请日：2012-02-07
申请人： Takuro Ikeda , Eiji Kitagawa , Hiroshi Yamada
发明人： Takuro Ikeda , Eiji Kitagawa , Hiroshi Yamada
IPC分类号： G06F17/50 , G08G1/01
CPC分类号： G06F17/5009 , G06F17/5068 , G06F17/5095 , G08G1/0125
摘要： A simulator used in a distributed process simulation includes: a storage unit configured to store map information, agent information, and area allocation information; a simulation execution unit; a condition determination unit configured to determine the condition of the reference agent to be referenced by the simulation execution unit based on a movement state of the agent; an allocation discrimination unit configured to discriminate another computer allocated an area in which the reference agent corresponding to the condition can be located; and an agent information acquisition unit configured to acquire the information about the agent satisfying the condition of the reference agent from the other discriminated computer.
摘要翻译：在分布式处理仿真中使用的模拟器包括：存储单元，被配置为存储地图信息，代理信息和区域分配信息; 模拟执行单元; 条件确定单元，被配置为基于所述代理的移动状态来确定由所述模拟执行单元引用的参考代理的状态; 分配鉴别单元，被配置为区分分配了与条件相对应的参考代理可以位于其中的区域的另一计算机; 以及代理信息获取单元，被配置为从另一个判别计算机获取关于所述参考代理的条件的代理的信息。

46. 发明授权

US08716819B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08716819B2
公开(公告)日：2014-05-06
申请号：US13429088
申请日：2012-03-23
申请人： Eiji Kitagawa , Naoharu Shimomura , Tsuneo Inaba
发明人： Eiji Kitagawa , Naoharu Shimomura , Tsuneo Inaba
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic random access memory includes a plurality of magnetoresistance elements. The plurality of magnetoresistance elements each include a recording layer having magnetic anisotropy perpendicular to a film surface, and a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization direction, and a first nonmagnetic layer formed between the recording layer and the reference layer. The recording layer is physically separated for each of the plurality of magnetoresistance elements. The reference layer and the first nonmagnetic layer continuously extend over the plurality of magnetoresistance elements.
摘要翻译：根据一个实施例，磁性随机存取存储器包括多个磁阻元件。多个磁阻元件各自包括垂直于膜表面的磁各向异性的记录层和可变磁化方向，具有垂直于膜表面的磁各向异性的参考层和不变的磁化方向，以及形成在第一非磁性层之间的第一非磁性层记录层和参考层。对于多个磁阻元件中的每一个物理地分离记录层。参考层和第一非磁性层在多个磁阻元件上连续延伸。

47. 发明授权

US08686521B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08686521B2
公开(公告)日：2014-04-01
申请号：US12716582
申请日：2010-03-03
申请人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.
摘要翻译：磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在非磁性层与设置有自旋极化层的一侧相反。稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

48. 发明授权

US08669628B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08669628B2
公开(公告)日：2014-03-11
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

49. 发明申请

US20130249025A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH THE SAME 审中-公开
标题翻译：磁性元件和磁阻随机存取存储器
公开(公告)号：US20130249025A1
公开(公告)日：2013-09-26
申请号：US13607700
申请日：2012-09-08
申请人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
发明人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a bottom electrode, a first magnetic layer with an magnetic axis substantially perpendicular to a film plane thereof, a first interface layer, an MgO insulating layer, a second interface layer, a second magnetic layer with an magnetic axis nearly perpendicular to a film plane thereof, and a top electrode. The magnetoresistive element has a diffusion barrier layer between the first magnetic layer and the first interface layer when the first magnetic layer contains Pt or Pd, and a diffusion barrier layer between the second magnetic layer and the second interface layer when the second magnetic layer contains Pt or Pd. The diffusion barrier layer is an Hf film of thickness 0.6 nm to 0.8 nm.
摘要翻译：根据一个实施例，磁阻元件包括底电极，具有基本上垂直于其膜平面的磁轴的第一磁性层，第一界面层，MgO绝缘层，第二界面层，具有几乎垂直于其膜平面的磁轴和顶部电极。当第一磁性层包含Pt或Pd时，磁阻元件在第一磁性层和第一界面层之间具有扩散阻挡层，当第二磁性层含有Pt时，第二磁性层和第二界面层之间具有扩散阻挡层或Pd。扩散阻挡层是厚度为0.6nm〜0.8nm的Hf膜。

50. 发明授权

US08530887B2 Magnetoresistive element, method of manufacturing the same, and magnetic memory 有权
标题翻译：磁阻元件，其制造方法和磁存储器
公开(公告)号：US08530887B2
公开(公告)日：2013-09-10
申请号：US13050692
申请日：2011-03-17
申请人： Eiji Kitagawa , Tadashi Kai , Tadaomi Daibou , Yutaka Hashimoto , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadashi Kai , Tadaomi Daibou , Yutaka Hashimoto , Hiroaki Yoda
IPC分类号： H01L27/15
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

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