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41. 发明申请

WO2003041168A1 SILICON ON INSULATOR DEVICE WITH IMPROVED HEAT REMOVAL AND METHOD OF MANUFACTURE 审中-公开
标题翻译：具有改进的热去除的绝缘体装置上的硅和制造方法
公开(公告)号：WO2003041168A1
公开(公告)日：2003-05-15
申请号：PCT/US2002/034860
申请日：2002-10-30
申请人： CREE MICROWAVE, INC.
发明人： DARMAWAN, Johan, Agus
IPC分类号： H01L27/01
CPC分类号： H01L29/78603 , H01L23/3677 , H01L2924/0002 , H01L2924/10158 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device is fabricated in a silicon on insulator “SOI” substrate including a supporting silicon substrate (10), a silicon oxide layer supported by the substrate, and a silicon layer overlying the silicon oxide layer. An electrical component is fabricated in the silicon layer over a portion of the silicon oxide layer (12), and then the substrate opposite from the component is masked and etched. A metal layer (20) is then formed in the portion of the substrate which has been removed by etching with the metal layer providing heat removal from the component. In an alternative embodiment, the silicon oxide layer overlying the portion of the substrate is removed with the metal layer abutting the silicon layer. In fabricating the device, preferential etching is employed to remove the silicon in the substrate with the silicon oxide functioning as an etchant stop. A two step process can be employed including a first oxide etch to etch the bulk of the silicon and then a more selective but slower etch. Then, the exposed silicon oxide can then be removed, as in the alternative embodiment, by a preferential etchant of silicon oxide.
摘要翻译：在包括支撑硅衬底10的硅绝缘体“SOI”衬底，由衬底支撑的氧化硅层和覆盖氧化硅层的硅层上制造半导体器件。在氧化硅层12的一部分上的硅层中制造电气部件，然后对与元件相对的基板进行掩模蚀刻。然后在衬底的部分中形成金属层20，该部分已经通过蚀刻除去金属层，从该部件提供热量去除。在替代实施例中，覆盖衬底部分的氧化硅层被去除，金属层邻接硅层。在制造该器件时，采用优先蚀刻来去除衬底中的硅，氧化硅起蚀刻剂停止的作用。可以采用两步法，包括第一氧化物蚀刻来蚀刻大部分硅，然后进行更多选择性但更慢的蚀刻。然后，如在替代实施例中那样，可以通过优选的氧化硅蚀刻剂去除暴露的氧化硅。

42. 发明申请

WO2003010833A3 FLIP CHIP BONDING OF LIGHT EMITTING DEVICES AND LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 审中-公开
公开(公告)号：WO2003010833A3
公开(公告)日：2003-02-06
申请号：PCT/US2002/023120
申请日：2002-07-22
申请人： CREE, INC. , CREE MICROWAVE, INC.
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerry , ANDREWS, Peter
IPC分类号： H01L33/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

43. 发明申请

WO2004045070A1 IMPROVED RF TRANSISTOR AMPLIFIER LINEARITY USING SUPPRESSED THIRD ORDER TRANSCONDUCTANCE 审中-公开
标题翻译：改进的射频晶体管放大器线性使用禁止的第三命令交叉
公开(公告)号：WO2004045070A1
公开(公告)日：2004-05-27
申请号：PCT/US2003/035415
申请日：2003-11-04
申请人： CREE MICROWAVE, INC.
发明人： PENGELLY, Raymond, S. , WOOD, Simon, M. , QUINN, John, P.
IPC分类号： H03F3/68
CPC分类号： H03F3/602 , H03F1/3205 , H03F3/211
摘要： The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters suchas the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.
摘要翻译：通过减少由晶体管产生的信号的奇数阶跨导导数，包括多个并联工作的晶体管的晶体管放大器的线性度得到改善。晶体管可以分组提供，每个组具有施加到其上的不同的偏置电压，或者每组晶体管可以具有施加到其上的不同的输入信号。晶体管组可以具有不同的物理参数，例如场效应晶体管中的栅极的宽比对于晶体管的阈值电压。

44. 发明申请

WO2004032188A2 PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK 审中-公开
标题翻译：具有射频旁路/输出匹配网络的封装射频功率晶体管
公开(公告)号：WO2004032188A2
公开(公告)日：2004-04-15
申请号：PCT/US0329719
申请日：2003-09-17
申请人： CREE MICROWAVE INC
发明人： CRESCENZI JR EMIL JAMES
IPC分类号： H01L23/66 , H03F1/56 , H01L
CPC分类号： H03F3/195 , H01L23/66 , H01L2223/665 , H01L2224/48091 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H03F1/56 , H01L2924/00014 , H01L2924/00
摘要： The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.
摘要翻译：宽带RF功率晶体管放大器的线性度通过在晶体管封装内包含输出匹配电路和集成偏置/射频双工器以及RF和视频旁路电容器网络并直接连接至晶体管而得到改善。通过将RF和视频旁路电源电路放置在封装内并靠近晶体管，输入阻抗谐振可以从大约50MHz增加到超过125MHz，由此减少输出信号中的AM / PM失真。

45. 发明申请

WO2006102466A3 HIGH POWER DOHERTY AMPLIFIER USING MULTI-STAGE MODULES 审中-公开
标题翻译：使用多级模块的高功率放大器
公开(公告)号：WO2006102466A3
公开(公告)日：2007-04-05
申请号：PCT/US2006010498
申请日：2006-03-16
申请人： CREE MICROWAVE INC , CREE INC , PENGELLY RAYMOND S , CRESCENZI JAMES E JR , WOOD SIMON M , DEKKER TOM STEWART
发明人： PENGELLY RAYMOND S , CRESCENZI JAMES E JR , WOOD SIMON M , DEKKER TOM STEWART
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.
摘要翻译：高功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。在双向两级放大器的一个实施例中，每个放大器模块的第一级可以包括信号预失真，由此第一级补偿第一级和第二级的失真。设计简单，产生了高增益的高效率放大器。在一个实施例中，市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

46. 发明申请

WO2006102466A2 HIGH POWER DOHERTY AMPLIFIER USING MULTI-STAGE MODULES 审中-公开
标题翻译：使用多级模块的高功率放大器
公开(公告)号：WO2006102466A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/010498
申请日：2006-03-16
申请人： CREE MICROWAVE, INC. , CREE, INC. , PENGELLY, Raymond, S. , CRESCENZI, James, E., Jr. , WOOD, Simon, M. , DEKKER, Tom, Stewart
发明人： PENGELLY, Raymond, S. , CRESCENZI, James, E., Jr. , WOOD, Simon, M. , DEKKER, Tom, Stewart
IPC分类号： H03F3/68
CPC分类号： H03F1/0288
摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.
摘要翻译：高功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。在双向两级放大器的一个实施例中，每个放大器模块的第一级可以包括信号预失真，由此第一级补偿第一级和第二级的失真。设计简单，产生了高增益的高效率放大器。在一个实施例中，市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

47. 发明申请

WO2004100215A3 N-WAY RF POWER AMPLIFIER CIRCUIT WITH INCREASED BACK-OFF CAPABILITY AND POWER ADDED EFFICIENCY USING UNEQUAL INPUT POWER DIVISION 审中-公开
标题翻译： N路RF功率放大器电路，使用不相等的输入功率分区，提高后退能力和功率增强效率
公开(公告)号：WO2004100215A3
公开(公告)日：2004-12-23
申请号：PCT/US2004011057
申请日：2004-04-09
申请人： CREE MICROWAVE INC , PENGELLY RAYMOND SYDNEY , WOOD SIMON MAURICE
发明人： PENGELLY RAYMOND SYDNEY , WOOD SIMON MAURICE
IPC分类号： H03F3/68 , B65D51/16 , B65D51/24 , H01L20060101 , H03F1/02 , H03F1/07 , H03F1/32 , H03F3/24 , H03F3/60
CPC分类号： H03F1/0288 , H03F1/0277 , H03F1/32 , H03F3/602 , H03F2200/451 , H03F2201/3203
摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated. The signal splitter can split the input signal power equally among the carrier and one or more peak amplifiers, or the input signal can be split unequally with the carrier amplifier receiving less input power than each of the peak amplifiers and vice versa.
摘要翻译：用于以宽的功率范围放大RF信号并具有提高的效率的RF功率放大器电路包括用于在第一功率范围上放大RF信号的载波放大器，并且功率饱和电平低于宽范围功率的最大值披露。一个或多个峰值放大器与载波放大器并联连接，其中每个峰值放大器被偏置以在载波放大器接近饱和之后顺序地提供放大的输出信号。输入信号通过信号分离器施加到载波放大器和多个峰值放大器，并且用于接收来自载波放大器和多个峰值放大器的放大输出信号的输出包括电阻负载R / 2。分离输入信号通过90°变压器施加到载波放大器，峰值放大器的输出通过90°变压器施加到输出负载。当工作在饱和以下时，当载波放大器向负载提供电流时，载波放大器为2R负载提供电源，这是最大功率下电流的一半，且放大器饱和。信号分配器可以在载波和一个或多个峰值放大器之间均等地分配输入信号功率，或者输入信号可以不均匀地分配，其中载波放大器接收比每个峰值放大器更少的输入功率，反之亦然。

48. 发明申请

WO2004100358A1 N-WAY RF POWER AMPLIFIER CIRCUIT WITH INCREASED BACK-OFF CAPABILITY AND POWER ADDED EFFICIENCY USING SELECTED PHASE LENGTHS AND OUTPUT IMPEDANCES 审中-公开
标题翻译： N-WAY射频功率放大器电路具有提高的备用能力和使用选择的相位长度和输出阻抗的功率增加效率
公开(公告)号：WO2004100358A1
公开(公告)日：2004-11-18
申请号：PCT/US2004/011457
申请日：2004-04-08
申请人： CREE MICROWAVE, INC. , PENGELLY, Raymond, Sydney , WOOD, Simon, Maurice
发明人： PENGELLY, Raymond, Sydney , WOOD, Simon, Maurice
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H03F1/0277 , H03F1/32 , H03F3/602 , H03F2201/3203
摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.
摘要翻译：一种RF功率放大器电路，用于在提高效率的宽范围的功率范围内放大RF信号，包括载波放大器，用于在第一功率范围内放大RF信号，并且功率饱和电平低于功率范围宽度的最大值披露。多个峰值放大器与载波放大器并联连接，每个峰值放大器被偏置以在载波放大器接近饱和之后依次提供放大的输出信号。输入信号通过信号分离器施加到载波放大器和多个峰值放大器，并且用于从载波放大器和多个峰值放大器接收放大的输出信号的输出包括电阻负载R / 2。分路输入信号通过90°变压器施加到载波放大器，峰值放大器的输出通过90°变压器施加到输出负载。当工作在饱和度以下时，载波放大器将功率输送到2R的负载，并且载波放大器将电流传递到负载，当放大器饱和时，其为最大功率时的电流的一半。在一个实施例中，输出具有阻抗Z，载波放大器和每个峰值放大器通过输出匹配网络连接到输出，输出匹配网络向每个放大器呈现小于Z的输出阻抗，并且每个输出匹配网络已经选择相位长度，以减少输出阻抗的电抗。

49. 发明申请

WO2003065573A1 N-WAY RF POWER AMPLIFIER WITH INCREASED BACKOFF POWER AND POWER ADDED EFFICIENCY 审中-公开
标题翻译： N-WAY射频功率放大器具有增加的备用电源和功率增加效率
公开(公告)号：WO2003065573A1
公开(公告)日：2003-08-07
申请号：PCT/US2003/002365
申请日：2003-01-23
申请人： CREE MICROWAVE, INC.
发明人： PENGELLY, Raymond, Sydney
IPC分类号： H03F3/68
CPC分类号： H03F1/32 , H03F1/0277 , H03F1/0288 , H03F3/602 , H03F2201/3203
摘要： An RF power amplifier for amplifying an RF signal over a broad range of power with improved efficiency includes a main amplifier (20) for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power. A plurality of auxiliary amplifiers (21, 22, 23) are connected in parallel with the main amplifier (20) with each of the auxiliary amplifiers (21, 22, 23) being biased to sequentially provide an amplified output signal after the main amplifier (20) approaches saturation. The input signal is applied through a signal splitter (32) to the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23), and an output for receiving amplified output signals from the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23) includes a resistive load R/2. The split input signal is applied through a 90° transformer (30) to the main amplifier (20), and the outputs of the auxiliary amplifiers (21, 22, 23) are applied through 90° transformers (24, 25, 26) to a output load (28). When operating below saturation, the main amplifier (20) delivers power to a load of 2R and the main amplifier (20) delivers current to the load which is one-half the current at maximum power and the amplifier is saturated.
摘要翻译：一种用于在提高效率的宽范围的功率放大RF信号的RF功率放大器包括：主放大器（20），用于在第一功率范围内放大RF信号，并且具有低于宽范围的最大值的功率饱和电平功率。多个辅助放大器（21,22,23）与主放大器（20）并联连接，其中每个辅助放大器（21,22,23）被偏置以在主放大器之后顺序提供放大的输出信号（ 20）接近饱和。输入信号通过信号分离器（32）施加到主放大器（20）和多个辅助放大器（21,22,23），以及用于从主放大器（20）和多个辅助放大器（21,22,23）包括电阻负载R / 2。分路输入信号通过90°变压器（30）施加到主放大器（20），并且辅助放大器（21,22,23）的输出通过90°变压器（24,25,26）施加到输出负载（28）。当运行低于饱和时，主放大器（20）将功率输送到2R的负载，并且主放大器（20）将电流传送到负载，该功率是最大功率时电流的一半，并且放大器饱和。

50. 发明申请

WO2003007451A1 VOLTAGE LIMITING PROTECTION FOR HIGH FREQUENCY POWER DEVICE 审中-公开
标题翻译：高频电源设备的电压限制保护
公开(公告)号：WO2003007451A1
公开(公告)日：2003-01-23
申请号：PCT/US2002/022198
申请日：2002-07-12
申请人： CREE MICROWAVE, INC.
发明人： BREWER, Kenneth, P. , BARTLOW, Howard, D. , DARMAWAN, Johan, A.
IPC分类号： H02H9/00
CPC分类号： H01L23/60 , H01L23/66 , H01L24/48 , H01L27/0255 , H01L2223/6655 , H01L2224/48137 , H01L2224/48195 , H01L2924/00014 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/13063 , H01L2924/14 , H01L2924/19011 , H01L2924/19041 , H01L2924/19107 , H01L2924/3011 , H01L2924/3025 , H03K17/08122 , H01L2924/00 , H01L2224/45099
摘要： An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.
摘要翻译：一种RF功率器件，包括制造在第一半导体芯片中的功率晶体管和在第二半导体芯片中制造的MOSCAP型结构。提供了一种电压限制装置，用于保护功率晶体管不受输入电压尖峰影响，并且优选地与MOSCAP一起制造在半导体芯片中。或者，电压限制装置可以是制造在电容器半导体芯片上或与电容器半导体芯片相邻的分立元件。通过从功率晶体管芯片去除限压器件，增强了限压器件的制造和测试，增加了功率器件的半导体面积，有助于器件制造的灵活性。

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