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    • 42. 发明授权
    • Electrostatic chuck
    • 静电吸盘
    • US07619870B2
    • 2009-11-17
    • US11834994
    • 2007-08-07
    • Shinji HimoriShoichiro MatsuyamaAtsushi MatsuuraHiroshi InazumachiMamoru KosakaiYukio MiuraKeigo Maki
    • Shinji HimoriShoichiro MatsuyamaAtsushi MatsuuraHiroshi InazumachiMamoru KosakaiYukio MiuraKeigo Maki
    • H01T23/00
    • H01L21/6833
    • An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.
    • 静电吸盘装置包括:静电吸盘部,其包括基板和用于向静电吸附内部电极施加直流电压的电源端子; 以及固定在静电吸盘部的另一个主面上的金属基部。 这里,在面向静电卡盘部的金属基部的主面上形成有凹部,电介质板固定在凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部通过绝缘性粘合剂层粘合而彼此接合。 绝缘粘合剂接合层的介电常数小于介质板和基板中的任何一种的介电常数。
    • 45. 发明申请
    • Stage for plasma processing apparatus, and plasma processing apparatus
    • 等离子体处理装置的阶段和等离子体处理装置
    • US20080041312A1
    • 2008-02-21
    • US11889339
    • 2007-08-10
    • Shoichiro MatsuyamaShinji HimoriAtsushi Matsuura
    • Shoichiro MatsuyamaShinji HimoriAtsushi Matsuura
    • C23C16/458
    • C23C16/4586H01J37/20H01J37/32091H01J37/32706H01J2237/2002H01L21/6833H01L21/68757
    • [Object]To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem]A stage 3 for a plasma processing apparatus 2 comprises: a conductive member 31 connected to a radiofrequency power source, the conductive member serving as an electrode for generating a plasma and/or an electrode for drawing ions from a plasma; a dielectric layer 32 covering a central part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed wafer W) placed on the placing surface; and an electrostatic chuck 33 laminated on the dielectric layer 35, the electrostatic chuck having an electrode film embedded therein. The electrode film satisfies δ/z≧1,000 (z; a thickness of the electrode film 35, 6; a skin depth of the electrode film for the electrostatic chuck as to a radiofrequency power supplied from the radiofrequency power source).
    • 为了提供等离子体处理装置的载物台,能够提高等离子体的电场强度的均匀性,从而提高等离子体处理对基板的面内均匀性,并且提供等离子体处理装置 提供这个阶段。 解决问题的手段等离子体处理装置2的阶段3包括:连接到射频电源的导电构件31,用作产生等离子体的电极的导电构件和/或用于从 等离子体; 覆盖导电部件的上表面的中心部分的电介质层32,用于使放置在放置面上的待处理晶片W的等离子体的射频电场均匀化; 以及层压在电介质层35上的静电卡盘33,其中嵌有电极膜的静电卡盘。 电极膜满足delta / z> = 1,000(z;电极膜35,6的厚度;静电卡盘的电极膜的表皮深度,从射频电源提供的射频电力)。