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    • 36. 发明申请
    • Treating device
    • 治疗装置
    • US20040020599A1
    • 2004-02-05
    • US10416962
    • 2003-05-16
    • Sumi TanakaMasayuki TanakaTatsuya Handa
    • H01L021/306
    • C23C16/45565C23C16/455C23C16/45521C23C16/4581C23C16/481H01L21/28556H01L21/67115H01L21/68721
    • A processing container, a pedestal for mounting wafer W, a processing gas feeder for feeding a processing gas to the front surface of the wafer W, an annular substrate-holding member for holding the wafer W, a purge gas feeder for feeding purge gas into a space formed at the backside surface side of the wafer W, a purge gas flow path for upwardly inducing a purge gas inside said space from between the wafer W and said substrate holding member, and a gas discharge mechanism for discharging said purge gas in a case that a pressure in said space becomes higher than a pressure outside said space within said processing container by a predetermined value. Further, a susceptor is composed of a material with thermal radiation transmissivity equal to or lower than dissimilar members such as temperature sensors contained in the susceptor.
    • 处理容器,用于安装晶片W的基座,用于将处理气体供给到晶片W的前表面的处理气体供给器,用于保持晶片W的环形基板保持部件,用于将吹扫气体供给到吹扫气体供给器 形成在晶片W的背面侧的空间,用于从晶片W和基板保持部件之间向上引导在所述空间内的吹扫气体的吹扫气体流路,以及用于将所述吹扫气体排出到气体排出机构 所述空间中的压力变得高于所述处理容器内的所述空间外的压力预定值的情况。 此外,基座由具有等于或低于不同构件的热辐射透射率的材料构成,诸如包含在基座中的温度传感器。