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    • 32. 发明申请
    • High value split poly p-resistor with low standard deviation
    • 具有低标准偏差的高值分离聚磷酸电阻
    • US20040150507A1
    • 2004-08-05
    • US10355317
    • 2003-01-31
    • James Michael Olson
    • H01C001/012
    • H01L28/20H01L21/8249H01L27/0635H01L27/0802
    • A resistor structure is disclosed that is constructed out of two layers of polysilicon. The intrinsic device is made using the top layer which is either a dedicated deposition, or formed as part of an existing process step such as a base epi growth in a BiCMOS flow. This poly layer can be made with a relatively high (greater than 2000 ohms per square) sheet resistance by appropriate scaling of the implant dose or by insitu doping methods. In this invention this layer is arranged to be about 1000 A or less thick. Such a resistor form with this thickness has been shown to demonstrate a better standard; deviation of resistance compared to resistors made with a thicker layer. Additionally, practical resistors made in elongated forms demonstrate better standard deviations of resistance when five bends were incorporated into the form. The resistor ends are formed by the addition of a bottom poly layer in a self aligned manner with a deposition that may already be part of the process sequence. The end result is that the intrinsic resistor body is formed of a single poly layer, while the ends are created out of two layers. These ends are thick enough so that standard silicide and contact etch processing may be added to the structure without special care. In addition, dedicated or already available implants may be incorporated into the resistor ends to ensure ohmic contacts from polysilicon to the silicide or the contact metal are achieved. These steps can produce an easily fabricated resistor structure with consistent, low resistance, ohmic end contacts, and intrinsic resistance of greater than 2000 ohms per square.
    • 公开了由两层多晶硅构成的电阻器结构。 本征器件是使用作为专用沉积的顶层制成的,或者形成为现有工艺步骤的一部分,例如BiCMOS流中的底部epi生长。 可以通过适当缩放植入剂量或通过本征掺杂方法,以相对较高(大于2000欧姆/平方)的薄层电阻制造该多层。 在本发明中,该层被设置为约1000或更小。 已经显示出具有该厚度的这种电阻器形式表现出更好的标准; 电阻偏差与用较厚层制成的电阻相比。 另外,用细长形式制成的实际电阻器在五个弯头并入表格时表现出更好的电阻标准偏差。 电阻器端通过以自对准的方式添加底部多层形成,其中沉积可能已经是处理顺序的一部分。 最终结果是固有电阻体由单个多晶层形成,而端部由两层构成。 这些端部足够厚,使得可以在没有特别小心的情况下将标准硅化物和接触蚀刻处理添加到结构中。 此外,可以将专用或已经可用的植入物结合到电阻器端部中以确保实现从多晶硅到硅化物或接触金属的欧姆接触。 这些步骤可以产生容易制造的电阻器结构,具有一致,低电阻,欧姆端触点和大于2000欧姆每平方的固有电阻。
    • 35. 发明申请
    • FLIP CHIP RESISTOR AND ITS MANUFACTURING METHOD
    • FLIP芯片电阻及其制造方法
    • US20040041688A1
    • 2004-03-04
    • US10233184
    • 2002-09-03
    • Leonid AkhtmanSakaev Matvey
    • H01C001/012
    • H01C7/003H01C1/142H01C17/006H01C17/281Y10T29/49082Y10T29/49098Y10T29/49099
    • The present invention provides for a flip chip resistor having a substrate having opposite ends, a pair of electrodes formed from a first electrode layer disposed on the opposite ends of the substrate, a resistance layer electrically connecting the pair of electrodes, a protective layer overlaying the resistance layer, and a second electrode layer overlaying the first electrode layer and at least a portion of the protective layer. The present invention provides for higher reliability performance and enlarging the potential soldering area despite small chip size. A method of the present invention provides for manufacturing flip chip resistors by applying a first electrode layer to a substrate to create at least one pair of opposite electrodes, applying a resistance layer between each pair of opposite electrodes; applying a first protective layer at least partially overlaying the resistance layer, applying a second protective layer at least partially overlaying at least a portion of the resistance layer, and applying a second electrode layer overlaying the first electrode layer and at least a portion of the second protective layer.
    • 本发明提供一种具有相对端的衬底的倒装芯片电阻器,由设置在衬底的相对端上的第一电极层形成的一对电极,电连接该对电极的电阻层,覆盖 电阻层和覆盖第一电极层和保护层的至少一部分的第二电极层。 尽管芯片尺寸小,本发明提供了更高的可靠性性能和扩大了潜在的焊接区域。 本发明的方法提供了制造倒装芯片电阻器,通过向基片施加第一电极层以产生至少一对相对电极,在每对相对电极之间施加电阻层; 施加至少部分地覆盖所述电阻层的第一保护层,施加至少部分覆盖所述电阻层的至少一部分的第二保护层,以及施加覆盖所述第一电极层的第二电极层和所述第二电极层的至少一部分 保护层。