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31. 发明公开

EP0610657A3 Integrated partial sawing process 失效
标题翻译： Verfahren zum teilweisenSägenvon intergrierter Schaltkreise。
公开(公告)号：EP0610657A3
公开(公告)日：1997-02-05
申请号：EP94100206.5
申请日：1994-01-07
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Mignardi,Michael A. , Alfaro,Rafael C.
IPC分类号： H01L21/78
CPC分类号： B81C1/00896 , B28D5/0011 , B28D5/0023 , B28D5/0047 , H01L21/304 , H01L21/3043 , H01L21/78 , Y10S148/028 , Y10T156/1064 , Y10T225/12
摘要： A process for partially sawing the streets or grooves (50) on semiconductor wafers (48). After sawing, the streets (50) can be covered by a protective material (52), and then the wafer continues its processing as before. After the wafer (48) is broken, the protective material (52) may or may not be removed. Additionally, the wafer(50) may be broken into individual chips using a wedge piece (70) that has a number of individual wedges (72) on it, where the individual wedges (70) press against the partially sawn streets (50), causing the wafer (48) to break.
摘要翻译：一种用于部分地锯切半导体晶片（48）上的街道或凹槽（50）的工艺。锯切后，街道（50）可被保护材料（52）覆盖，然后晶片如前所述继续其处理。在晶片（48）破裂之后，保护材料（52）可以被移除也可以不被去除。另外，可以使用在其上具有多个单独的楔（72）的楔块（70）将晶片（50）破碎成单独的芯片，其中单个楔（70）压靠部分锯切的街道（50），导致晶片（48）断裂。

32. 发明申请

WO2018002010A1 PROTECTIVE COATING ON TRENCH FEATURES OF A WAFER AND METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：晶片的特性保护涂层及其制造方法
公开(公告)号：WO2018002010A1
公开(公告)日：2018-01-04
申请号：PCT/EP2017/065787
申请日：2017-06-27
申请人： ROBERT BOSCH GMBH
发明人： SUVANTO, Mikko VA
IPC分类号： B81C1/00 , H01L21/78
CPC分类号： B81B7/0058 , B81B2203/033 , B81C1/00404 , B81C1/00825 , B81C1/00896 , B81C2201/053 , H01L21/78 , H01L23/562
摘要： A coating for protecting a wafer from moisture and debris due to dicing, singulating, or handling the wafer is provided. A semiconductor sensor device comprises a wafer having a surface and at least one trench feature and the protective coating covering the trench feature. The trench feature comprises a plurality of walls and the walls are covered with the protective coating, wherein the walls of the trench feature are formed as a portion of the semiconductor sensor device. The semiconductor sensor device further comprises a patterned mask formed on the wafer before the trench feature is formed, wherein the protective coating is formed directly to the trench feature and the patterned mask. The semiconductor sensor device is selected from a group consisting of a MEMS die, a sensor die, a sensor circuit die, a circuit die, a pressure die, an accelerometer, a gyroscope, a microphone, a speaker, a transducer, an optical sensor, a gas sensor, a bolometer, a giant megnetoresistive sensor (GMR), a tunnel magnetoresistive (TMR) sensor, an environmental sensor, and a temperature sensor.
摘要翻译：提供了用于保护晶片免受由于切割，分离或处理晶片而引起的水分和碎屑的涂层。半导体传感器装置包括具有表面和至少一个沟槽部件的晶片，并且覆盖沟槽部件的保护涂层。沟槽特征包括多个壁，并且壁被覆盖有保护涂层，其中沟槽特征的壁被形成为半导体传感器装置的一部分。半导体传感器器件还包括在形成沟槽特征之前在晶片上形成的图案化掩模，其中保护涂层直接形成到沟槽特征和图案化掩模。半导体传感器装置选自由MEMS芯片，传感器芯片，传感器电路芯片，电路芯片，压力芯片，加速度计，陀螺仪，麦克风，扬声器，换能器，光学传感器，气体传感器，辐射热测量计，巨型磁阻传感器（GMR），隧道磁阻（TMR）传感器，环境传感器和温度传感器。

33. 发明申请

WO2016107630A1 PROTECTIVE SHEETING FOR USE IN PROCESSING A SEMICONDUCTOR-SIZED WAFER AND SEMICONDUCTOR-SIZED WAFER PROCESSING METHOD 审中-公开
标题翻译：用于处理半导体尺寸波形和半导体尺寸波形处理方法的保护层
公开(公告)号：WO2016107630A1
公开(公告)日：2016-07-07
申请号：PCT/EP2014/079367
申请日：2014-12-29
申请人： PRIEWASSER, Karl Heinz
发明人： PRIEWASSER, Karl Heinz
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/6836 , B81C1/00896 , H01L21/268 , H01L21/304 , H01L21/67132 , H01L21/6835 , H01L21/78 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386
摘要： The invention relates to a protective sheeting (10) for use in processing a semiconductor-sized wafer (W). The protective sheeting (10) comprises a substantially circular base sheet (12) and a substantially annular adhesive layer (14) applied to a peripheral portion of a first surface of the base sheet (12). The inner diameter of the adhesive layer (14) is smaller than the diameter of the semiconductor- sized wafer (W). Further, the outer diameter of the adhesive layer (14) is larger than the inner diameter of a semiconductor-sized annular frame (20) for holding the semiconductor-sized wafer (W). The invention further relates to a semiconductor-sized wafer processing method comprising the steps of attaching the protective sheeting (10) to a front side (50) or a back side (52) of the semiconductor- sized wafer (W) via the adhesive layer (14) on the first surface of the base sheet (12) so that an inner peripheral portion of the adhesive layer (14) adheres to an outer peripheral portion of the front side (50) or the back side (52) of the wafer (W), and processing the wafer (W) after the protective sheeting (10) has been attached to the front side (50) or the back side (52) thereof.
摘要翻译：本发明涉及一种用于加工半导体尺寸晶片（W）的保护片（10）。保护片（10）包括基本上圆形的基片（12）和施加到基片（12）的第一表面的周边部分的基本环形的粘合剂层（14）。粘合剂层（14）的内径小于半导体尺寸晶片（W）的直径。此外，粘合剂层（14）的外径大于用于保持半导体尺寸的晶片（W）的半导体尺寸的环形框架（20）的内径。本发明还涉及一种半导体尺寸的晶片处理方法，包括以下步骤：通过粘合剂层将保护片（10）附接到半导体尺寸的晶片（W）的前侧（50）或背面（52）（14）的第一表面上，使得粘合剂层（14）的内周部分粘合到晶片的前侧（50）或背面（52）的外周部分（W），并且在保护片（10）已经附接到其前侧（50）或其后侧（52）之后处理晶片（W）。

34. 发明申请

WO2002074686A2 A METHOD AND DEVICE FOR PROTECTING MICRO ELECTROMECHANICAL SYSTEMS STRUCTURES DURING DICING OF A WAFER 审中-公开
标题翻译：用于保护微波电子系统结构的方法和装置
公开(公告)号：WO2002074686A2
公开(公告)日：2002-09-26
申请号：PCT/US2001/051501
申请日：2001-12-05
申请人： ANALOG DEVICES, INC.
发明人： SPOONER, Timothy, R. , COURAGE, David, S. , HARNEY, Kieran, P. , FELTON, Lawrence, E. , LUO, Jing , WORKMAN, Brad , MARTIN, John, R.
IPC分类号： B81B7/00
CPC分类号： H01L21/6836 , B81C1/00888 , B81C1/00896 , H01L2221/68327
摘要： A wafer cap protects micro electromechanical system ("MEMS") structures during a dicing of a MEMS wafer to produce individual MEMS dies. A MEMS wafer is prepared having a plurality of MEMS structure sites thereon. Upon the MEMS wafer, the wafer cap is mounted to produce a laminated MEMS wafer. The wafer cap is recessed in areas corresponding to locations of the MEMS structure sites on the MEMS wafer. The capped MEMS wafer can be diced into a plurality of MEMS dies without causing damage to or contaminating the MEMS die.
摘要翻译：在MEMS晶片的切割期间，晶片盖保护微机电系统（“MEMS”）结构以产生单独的MEMS管芯。制备具有多个MEMS结构位置的MEMS晶片。在MEMS晶片上，安装晶片盖以产生层压的MEMS晶片。晶片盖凹入与MEMS晶片上的MEMS结构位置的位置对应的区域中。封装的MEMS晶片可以切割成多个MEMS管芯，而不会损坏或污染MEMS管芯。

35. 发明专利

JP6312343B2 ウェハを処理する方法有权
公开(公告)号：JP6312343B2
公开(公告)日：2018-04-18
申请号：JP2016163515
申请日：2016-08-24
申请人：株式会社ディスコ
发明人：カールハインツプリーヴァッサー
IPC分类号： H01L21/301 , H01L21/304
CPC分类号： H01L21/78 , B81C1/00825 , B81C1/00896 , B81C2201/053 , H01L21/304 , H01L21/568 , H01L21/6835 , H01L21/6836 , H01L24/94 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/94 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/1461 , H01L2224/03 , H01L2224/11

37. 发明专利

JP2010268412A Mems microphone semiconductor device and method of manufacturing the same 审中-公开
标题翻译： MEMS麦克风半导体器件及其制造方法
公开(公告)号：JP2010268412A
公开(公告)日：2010-11-25
申请号：JP2009120418
申请日：2009-05-18
申请人： Panasonic Corp , パナソニック株式会社
发明人： IITAKA MASAHIRO , UCHIUMI KATSUKI , FUJII KYOKO
IPC分类号： H04R19/04 , B81B3/00 , B81C3/00 , H04R19/01
CPC分类号： B81C1/00896 , B81B2201/0257 , B81B2207/012 , B81C2201/053 , H01L24/97 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2924/14 , H01L2924/1461 , H04R19/04 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a MEMS microphone semiconductor device in which reliability is improved by suppressing entry of cutting water or cutting dust during processing for dicing, and to provide a method of manufacturing the same. SOLUTION: The MEMS microphone semiconductor device includes: a substrate; one or more semiconductor elements mounted on a first principal surface of the substrate; a case fixed on the first principal surface of the substrate for covering the one or more semiconductor elements; a through-hole which is formed on the substrate or on the case and becomes a sound hole; and a plurality of connecting electrodes formed on a second principal surface, that is opposite to the first principal surface, of the substrate, wherein entry suppression shaping is applied to the through-hole so as to suppress the entry of cutting water during dicing. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种MEMS麦克风半导体器件，其通过在切割加工期间抑制切入水或切割灰尘来提高可靠性，并提供其制造方法。解决方案：MEMS麦克风半导体器件包括：衬底; 安装在所述基板的第一主表面上的一个或多个半导体元件; 固定在用于覆盖所述一个或多个半导体元件的所述基板的所述第一主表面上的壳体; 形成在基板上或壳体上并形成声孔的通孔; 以及形成在基板的与第一主表面相对的第二主表面上的多个连接电极，其中对通孔施加抑制成形以抑制切割期间切割水的进入。版权所有（C）2011，JPO＆INPIT

38. 发明专利

JP2007216368A Electromechanical element and electronic circuit device, and method for manufacturing the same 审中-公开
标题翻译：电子元件和电子电路装置及其制造方法
公开(公告)号：JP2007216368A
公开(公告)日：2007-08-30
申请号：JP2006042987
申请日：2006-02-20
申请人： Sony Corp , ソニー株式会社
发明人： AKIBA AKIRA , MITARAI TAKASHI
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/00896 , B81B2207/015 , B81C2201/056
摘要： PROBLEM TO BE SOLVED: To solve a problem such as deformation or breakage of a needle caused by a load or the like on the mover in a manufacturing process of an electromechanical element.
SOLUTION: A mover 5 is formed on a sacrifice layer 23, and a plurality of holes 5h for exposing the sacrifice layer 23 are formed in the mover 5. The first etching to leave a part of the sacrifice layer is performed from the holes formed in the mover and from the periphery of the mover, and the mover is mechanically supported by the remaining portion of the sacrifice layer. In this state, the loading work is performed, the second etching is performed subsequently to remove the remaining portion of the sacrifice layer. By performing the loading work on the needle in a reinforcing state by a part of the sacrifice layer, deformation, breakage or the like of the mover in the manufacturing process by the load or the like can be avoided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决在机电元件的制造过程中由于载荷等导致的针头的变形或破损的问题。解决方案：在牺牲层23上形成移动器5，并且在移动器5中形成用于暴露牺牲层23的多个孔5h。离开牺牲层的一部分的第一蚀刻是从形成在移动器和移动器的周边的孔，并且移动器由牺牲层的剩余部分机械地支撑。在这种状态下，进行加载工作，随后执行第二蚀刻以去除牺牲层的剩余部分。通过由牺牲层的一部分在加强状态下进行针的加载作业，可以避免在制造过程中通过负载等的动子的变形，破损等。版权所有（C）2007，JPO＆INPIT

39. 发明专利

NO20021507A 未知
公开(公告)号：NO20021507A
公开(公告)日：2002-03-26
申请号：NO20021507
申请日：2002-03-26
申请人： INPUT OUTPUT INC
发明人： YU LIANZHONG , GOLDBERG HOWARD D , YU DULI
IPC分类号： G02B26/10 , B81B3/00 , B81B7/00 , B81C1/00 , B81C99/00 , C23F1/02 , G01P9/04 , G02B26/08 , G03F7/20 , B81B1/00
CPC分类号： B81C1/00142 , B81B2201/042 , B81B2203/0315 , B81C1/00896 , B81C2203/0118 , B81C2203/036 , G02B26/0816

40. 发明公开

EP3207568A4 TRANSFER METHOD, MANUFACTURING METHOD, DEVICE AND ELECTRONIC APPARATUS OF MEMS 审中-公开
标题翻译： ÜBERTRAGUNGSVERFAHREN，HERSTELLUNGSVERFAHREN，VORRICHTUNG UND ELEKTRONISCHE VORRICHTUNG VON MEMS
公开(公告)号：EP3207568A4
公开(公告)日：2017-09-20
申请号：EP15886930
申请日：2015-04-01
申请人： GOERTEK INC
发明人： ZOU QUANBO , WANG ZHE
IPC分类号： H01L25/16 , H01L25/00
CPC分类号： B81C1/00896 , B81C2201/0194 , B81C2203/01 , B81C2203/0127 , H01L25/50 , H01L2224/81005 , H01L2924/1461
摘要： A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.
摘要翻译： MEMS的传输方法，制造方法，装置和电子设备。该MEMS传输方法包括：在激光透明载体的第一表面上沉积激光吸收层; 在激光吸收层上形成MEMS结构; 将MEMS结构附接到接收器; 并且从载体侧执行激光剥离以去除载体。可以以简单，低成本的方式实现高质量MEMS结构的转移。

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