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31. 发明授权

EP3095755B1 MONOLITHIC FABRICATION OF THERMALLY ISOLATED MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICES 有权
标题翻译：热分离微电子机械系统（MEMS）器件的整体制造
公开(公告)号：EP3095755B1
公开(公告)日：2017-07-26
申请号：EP16168459.2
申请日：2016-05-04
申请人： Honeywell International Inc.
发明人： REINKE, John , LODDEN, Grant
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0019 , B81B3/0081 , B81B7/0087 , B81B2201/0228 , B81B2201/025 , B81C1/0069 , H02N1/00
摘要： A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.
摘要翻译：提供了一种用于制造热隔离微机电系统（MEMS）结构的方法。该方法包括用玻璃晶片处理第一材料的第一晶片以形成包括第一材料和玻璃的至少一个牺牲结构的复合衬底; 以第二材料形成MEMS器件; 在至少一个复合衬底上形成至少一个温度传感元件; 和MEMS器件; 以及蚀刻掉复合衬底中的第一材料的至少一个牺牲结构以形成至少一个热隔离玻璃弯曲部。 MEMS器件通过至少一个热绝缘玻璃挠曲件在热绝缘台上热隔离。所述至少一个温度感测元件位于热隔离级中的相应的至少一个上：和MEMS器件。

32. 发明公开

EP3180287A1 DISPOSITIF MICROELECTROMECANIQUE PRESENTANT UNE SENSIBILITE VIS-A-VIS DES SOLLICITATIONS MECANIQUES HORS PLAN 审中-公开
标题翻译：抵御外界水平时的机械力SENSIBLE微机电装置
公开(公告)号：EP3180287A1
公开(公告)日：2017-06-21
申请号：EP15767206.4
申请日：2015-08-07
申请人： Tronic's Microsystems
发明人： BOILLOT, François-Xavier
IPC分类号： B81B3/00 , G01P15/12
CPC分类号： B81B3/0094 , B81B2201/0228 , G01P15/123 , G01P2015/0831
摘要： Microelectromechanical device made from a semiconductor substrate and comprising at least a main mass (1) able to move rotationally about an axis of rotation (4) parallel to the plane of the substrate under the effect of a first mechanical force applied. The device further comprises at least one mechanical detection assembly formed by: - an intermediate mass (51, 52) connected to an anchor zone (2) via mechanical connection means (61, 62) allowing the intermediate mass (51, 52) a movement parallel to the plane of the substrate under the effect of a second mechanical force applied inducing a movement of the device along an axis X parallel to the plane of the substrate and perpendicular to the axis of rotation (4); and - of a strain gauge (71, 72) secured to the main mass (1) via a first attachment point (711, 721) and secured to the intermediate mass (51, 52) via a second attachment point (712, 722), the movements of the first attachment point (711, 721) and of the second attachment point (712, 722) being in substantially identical directions with different amplitudes under the effect of the first force applied, and in substantially identical directions with substantially equal amplitudes under the effect of the second force applied.
摘要翻译：从半导体基底和至少包括一个主块（1）能够在旋转（4）平行体系转动轴线移动大约于基板的平面中施加的第一机械力的作用下由微机电装置。该装置还包括由形成至少一个机械检测组件： - 在通过机械连接装置（61，62）允许所述中间质量（51，52）的移动连接到锚定区（2）中间质量（51,52）平行于第二机械力的作用下在衬底的应用诱导装置的移动沿轴线X平行于基板的平面和垂直于旋转（4）的轴线的平面; 以及 - 经由第二连接点通过一个第一连接点（711，721）固定到主块（1）和固定到所述中间质量（51，52）的应变计（71，72）的（712，722）中，第一连接点（711，721）的运动和所述第二连接点（712，722）与所述第一力的应用的作用下不同的幅度是在基本上相同的方向，并在基本上相同的方向上具有基本上相等的幅度下所施加的第二力的作用。

33. 发明公开

EP3109644A1 INTEGRATED TIME-BASED OPTICAL READ OUT MEMS SENSOR AND METHOD THEREFOR 审中-公开
标题翻译： INTEGRIERTER MEMS传感器MIT ZEITBASIERTER OPTISCHER AUSLESUNG UND VERFAHRENDAFÜR
公开(公告)号：EP3109644A1
公开(公告)日：2016-12-28
申请号：EP16174671.4
申请日：2016-06-15
申请人： Honeywell International Inc.
发明人： HORNING, Robert D. , LODDEN, Grant
IPC分类号： G01P15/093 , G01P21/00 , G01P15/08 , G01C19/5621 , G01C19/5656 , G01C25/00 , B81B5/00
CPC分类号： G01C19/5726 , B81B2201/0228 , B81B2201/04 , B81B2203/053 , G01C19/5621 , G01C19/5656 , G01C19/574 , G01C25/00 , G01P15/032 , G01P15/093 , G01P21/00 , G01P2015/0822 , G02B6/29331
摘要： Systems and methods for a time-based optical pickoff for MEMS sensors are provided. In one embodiment, a method for an integrated waveguide time-based optical-pickoff sensor comprises: launching a light beam generated by a light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting changes in an area of overlap between the coupling port and a moving sensor component separated from the coupling port by a gap by measuring an attenuation of the light beam at the optical output port, wherein the moving sensor component is moving in-plane with respect a surface of the first substrate comprising the coupling port and the coupling port is positioned to detect movement of an edge of the moving sensor component.
摘要翻译：提供了用于MEMS传感器的基于时间的光学拾取的系统和方法。在一个实施例中，一种用于集成波导时基的光学检测传感器的方法包括：将由光源产生的光束发射到在第一衬底内单片制造的集成波导光学检测器，所述集成波导光学检测器包括：光输入端口，耦合端口和光输出端口; 并且通过测量光输出端口处的光束的衰减来检测耦合端口与从耦合端口分离的移动传感器部件之间的重叠区域的变化，其中移动传感器部件正在与相对于包括耦合端口的第一基板的表面和耦合端口被定位成检测移动的传感器部件的边缘的移动。

34. 发明公开

EP1203748A4 MICRODEVICE AND ITS PRODUCTION METHOD 有权
标题翻译：科技组件及其制造方法
公开(公告)号：EP1203748A4
公开(公告)日：2005-06-01
申请号：EP00900814
申请日：2000-01-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： YOSHIDA YUKIHISA , CHABLOZ MARTIAL , JIAO JIWEI , MATSUURA TSUKASA , TSUTSUMI KAZUHIKO
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , G01P1/02 , G01P15/08 , G01P15/125 , G02B26/08 , H01L29/84
CPC分类号： G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
摘要： A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.

35. 发明申请

WO2017058335A1 REFRACTORY SEED METAL FOR ELECTROPLATED MEMS STRUCTURES 审中-公开
标题翻译：用于电解MEMS结构的耐火种子金属
公开(公告)号：WO2017058335A1
公开(公告)日：2017-04-06
申请号：PCT/US2016/041954
申请日：2016-07-13
申请人： GENERAL ELECTRIC COMPANY
发明人： BREWER, Joleyn, Eileen , KEIMEL, Christopher, Fred , AIMI, Marco, Francesco , MINNICK, Andrew, James , RUFFALO, Renner, Stephen
IPC分类号： B81B3/00
CPC分类号： B81B3/0027 , B81B3/0075 , B81B7/0003 , B81B7/008 , B81B2201/01 , B81B2201/014 , B81B2201/0228 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2203/053 , B81B2207/015 , B81B2207/115 , B81C1/00134 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00373 , B81C2201/0107 , G01L9/0042 , G01L9/0044
摘要： A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.
摘要翻译：一种用于微电子机械系统（MEMS）装置的系统和方法，其包括形成在基板上的基板和独立悬挂的电镀金属MEMS结构。独立悬挂的电镀金属MEMS结构包括机械耦合到基底的金属机械元件和机械耦合到机械元件并与之机电连接的种子层，种子层包括难熔金属和耐火材料中的至少一种金属合金，其中机械元件的厚度基本上大于种子层的厚度，使得独立和悬浮的电镀金属MEMS结构的机械和电学性质由机械元件的材料特性限定。

36. 发明申请

WO2016057007A1 MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 审中-公开
标题翻译：半导体基板上的单片集成多传感器器件及其方法
公开(公告)号：WO2016057007A1
公开(公告)日：2016-04-14
申请号：PCT/US2014/026562
申请日：2014-03-13
申请人： GOGOI, Bishnu
发明人： GOGOI, Bishnu
IPC分类号： H01L27/14
CPC分类号： B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
摘要： An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.
摘要翻译：公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。直接传感器需要测量的参数直接应用于直接传感器。相反，间接传感器可以将被测量的参数间接地应用于间接传感器。由直接传感器测量的参数与由间接传感器测量的参数不同。换句话说，直接传感器和间接传感器是不同的类型。直接传感器的一个例子是压力传感器。由压力传感器测量的压力必须应用于压力传感器。间接传感器的一个例子是加速度计。速度变化率不必直接应用于加速度计。在一个实施例中，使用光刻技术形成直接和间接传感器。

37. 发明申请

WO02051743A2 THIN SILICON MICROMACHINED STRUCTURES 审中-公开
标题翻译：薄硅微孔结构
公开(公告)号：WO02051743A2
公开(公告)日：2002-07-04
申请号：PCT/US2001/050464
申请日：2001-12-20
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81C1/0015 , B81B2201/0228 , B81C2201/019
摘要： Methods for making thin silicon layers 20 suspended over recesses 30 in glass wafers or substrates 22 are disclosed. One embodiment of the present invention includes providing a thin silicon wafer 20, and a glass wafer or substrate 22. Recesses 30 are formed in one surface 24 of the glass wafer 22, and electrodes 38 are formed in the recesses 30. The silicon wafer 20 is then bonded to the glass wafer 22 over the recesses 30. The silicon wafer 20 is then etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer 120 has a patterned metal layer 129. The silicon wafer 120 is bonded to the glass wafer 22, with the patterned metal layer 129 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 is selectively etched down to the metal layer 129. The metalized layer 129 may serve to seal gasses within the recessed cavities 30 of the glass wafer 22 during the silicon etching process. The metal layer 129 can then be subsequently removed.
摘要翻译：公开了制造悬浮在玻璃晶片或基板22中的凹槽30上的薄硅层20的方法。本发明的一个实施例包括提供薄硅晶片20和玻璃晶片或基板22.凹部30形成在玻璃晶片22的一个表面24中，并且电极38形成在凹部30中。硅晶片20 然后在凹槽30上结合到玻璃晶片22.然后蚀刻硅晶片20以赋予所需的悬浮或硅晶片结构。在本发明的另一个实施例中，硅晶片120具有图案化的金属层129.硅晶片120结合到玻璃晶片22上，图案化的金属层129邻近玻璃晶片22中的凹槽30定位。硅晶片120定位成邻近玻璃晶片22中的凹部30.硅晶片120被选择性地向下蚀刻到金属层129.金属化层129可用于在硅蚀刻期间将气体密封在玻璃晶片22的凹腔30内。处理。然后可以随后去除金属层129。

38. 发明公开

EP3344574A1 REFRACTORY SEED METAL FOR ELECTROPLATED MEMS STRUCTURES 有权
公开(公告)号：EP3344574A1
公开(公告)日：2018-07-11
申请号：EP16829011.2
申请日：2016-07-13
申请人： General Electric Company
发明人： BREWER, Joleyn Eileen , KEIMEL, Christopher Fred , AIMI, Marco Francesco , MINNICK, Andrew James , RUFFALO, Renner Stephen
IPC分类号： B81B3/00
CPC分类号： B81B3/0027 , B81B3/0075 , B81B7/0003 , B81B7/008 , B81B2201/01 , B81B2201/014 , B81B2201/0228 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2203/053 , B81B2207/015 , B81B2207/115 , B81C1/00134 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00373 , B81C2201/0107 , G01L9/0042 , G01L9/0044
摘要： A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

39. 发明授权

EP1345844B1 SOI/GLASS PROCESS FOR FORMING THIN SILICON MICROMACHINED STRUCTURES 失效
标题翻译： SOI /玻璃工艺用于生产薄MICRO EDITED结构
公开(公告)号：EP1345844B1
公开(公告)日：2009-11-04
申请号：EP01993334.0
申请日：2001-12-20
申请人： Honeywell International Inc.
发明人： CABUZ, Cleopatra , RIDLEY, Jeffrey, Alan
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/0015 , B81B2201/0228 , B81C2201/019 , H01L27/12 , H01L27/1203
摘要： Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.

40. 发明公开

EP1203748A1 MICRODEVICE AND ITS PRODUCTION METHOD 有权
标题翻译：密歇根州德黑兰的赫尔辛基
公开(公告)号：EP1203748A1
公开(公告)日：2002-05-08
申请号：EP00900814.5
申请日：2000-01-19
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： YOSHIDA, Yukihisa, Mitsubishi Denki KK , CHABLOZ, Martial, Mitsubishi Denki KK , JIAO, Jiwei, Mitsubishi Denki KK , MATSUURA, Tsukasa, Mitsubishi Denki KK , TSUTSUMI, Kazuhiko, Mitsubishi Denki KK
IPC分类号： B81B3/00 , B81C1/00 , G01P15/125 , G02B26/08 , H01L29/84
CPC分类号： G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
摘要： A micro-device including an insulating substrate having a recess formed on the surface thereof, and a beam-like structure made of silicon formed on the front surface of the insulating substrate to surround the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded onto the insulating substrate and at least one cantilever formed integrally with the supporting section while extending across the recess. The micro device also has an electrically conductive film electrically connected with the supporting section and formed on the surface of the recess at least in a portion right under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus the etching gas having positive charge is not subjected to electrical repulsion of the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in the shape and dimensions, the micro device of the present invention can improve a high reliability and a degree of freedom in design of the micro device.
摘要翻译：一种微型器件，包括在其表面上形成有凹部的绝缘衬底和形成在绝缘衬底的前表面上以围绕凹部的由硅制成的梁状结构。梁状结构包括至少一个功能部分，并且功能部分具有结合到绝缘基板上的支撑部分和至少一个与支撑部分一体形成的悬臂，同时延伸穿过凹部。微型装置还具有与支撑部分电连接并且至少在垂直于悬臂下方的部分形成在凹部的表面上的导电膜。导电膜防止在干蚀刻工艺中凹部的表面带正电。因此，具有正电荷的蚀刻气体不会受到凹陷的电斥斥，并且不会撞击到硅衬底的背面，因此不会发生悬臂的侵蚀。结果，由于在形状和尺寸上高精度地形成束状结构，所以本发明的微型器件可以提高微型器件的高可靠性和设计自由度。

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