专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

WO2010099982A1 ETCHING COMPOSITION, IN PARTICULAR FOR SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSITION 审中-公开
标题翻译：蚀刻组合物，特别是硅材料，表征这些材料表面的缺陷的方法和用蚀刻组合物处理这些表面的方法
公开(公告)号：WO2010099982A1
公开(公告)日：2010-09-10
申请号：PCT/EP2010/001429
申请日：2010-03-08
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , MAEHLISS, Jochen , KOLBESEN, Bernd , HAKIM, Romana , BRUNIER, Francois
发明人： MAEHLISS, Jochen , KOLBESEN, Bernd , HAKIM, Romana , BRUNIER, Francois
IPC分类号： C09K13/08
CPC分类号： C09K13/08 , C09K13/10 , G01N21/8803 , G01N21/9501
摘要： The present invention relates to an etching composition, in particular for silicon materials, a method for characterizing defects on surfaces of such materials and a process of treating such surfaces with the etching composition, wherein the etching composition comprises an organic oxidant dissolved in a solvent, and a de-oxidant, wherein the de-oxidant comprises HF or HBF 4 or mixtures thereof.
摘要翻译：本发明涉及特别是硅材料的蚀刻组合物，用于表征这些材料的表面上的缺陷的方法和用蚀刻组合物处理这些表面的方法，其中蚀刻组合物包含溶解在溶剂中的有机氧化物，和脱氧剂，其中所述脱氧剂包括HF或HBF 4或其混合物。

32. 发明申请

WO2010072278A1 METHOD OF FABRICATING A BACK-ILLUMINATED IMAGE SENSOR 审中-公开
标题翻译：制造背照明图像传感器的方法
公开(公告)号：WO2010072278A1
公开(公告)日：2010-07-01
申请号：PCT/EP2009/006845
申请日：2009-09-22
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , BOURDELLE, Konstantin , MAZURE, Carlos
发明人： BOURDELLE, Konstantin , MAZURE, Carlos
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/1464
摘要： The invention relates to a method of fabricating a back-illuminated image sensor comprising the steps of providing a first substrate comprising a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.
摘要翻译：本发明涉及一种制造背照式图像传感器的方法，包括以下步骤：提供包括半导体层，特别是硅层的第一衬底，在半导体层上形成电子器件结构，并且仅仅掺杂半导体层。通过这样做，可以实现改进的光电二极管的掺杂剂分布和电性能，使得最终产品，即图像传感器具有更好的质量。

33. 发明申请

WO2010022814A1 STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS 审中-公开
标题翻译：强化层的松散层
公开(公告)号：WO2010022814A1
公开(公告)日：2010-03-04
申请号：PCT/EP2009/004790
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce
发明人： FAURE, Bruce
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02488 , H01L21/0242 , H01L21/0254 , H01L21/02664 , H01L21/84
摘要： The present invention relates to a method for relaxing a strained material layer, comprising providing a strained material layer and a low-viscosity layer formed on a first face of the strained material layer; forming a stiffening layer on at least one part of a second face of the strained material layer opposite to the first face thereby forming a multilayer stack; and subjecting the multilayer stack to a heat treatment thereby at least partially relaxing the strained material layer.
摘要翻译：本发明涉及一种松弛应变材料层的方法，包括提供在应变材料层的第一面上形成的应变材料层和低粘度层; 在所述应变材料层的与所述第一面相对的第二面的至少一部分上形成加强层，从而形成多层叠层; 并对多层叠层进行热处理，从而至少部分地松弛应变材料层。

34. 发明申请

WO2010015878A2 PROCESS FOR MODIFYING A SUBSTRATE 审中-公开
标题翻译：修改基板的工艺
公开(公告)号：WO2010015878A2
公开(公告)日：2010-02-11
申请号：PCT/IB2008/003101
申请日：2008-09-08
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PHILIPS LUMILEDS LIGHTING COMPANY LLC , FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
发明人： FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762 , H01L21/324
CPC分类号： H01L21/76251 , H01L21/6835 , H01L31/1892 , H01L33/0079 , H01L2221/68327 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381 , Y02E10/50
摘要： The invention relates to a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (10r); (b) providing a support substrate (25); wherein either the bonding face (10b) of the initial substrate (10), and/or a face of the support substrate (25), is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to a wavelength of electromagnetic radiation (c) performing bonding to join the bonding face (10b) of the initial substrate (10) to the support substrate (25) via the electromagnetic radiation absorbing layer (24); (e) carrying out irradiation of the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to induce separation of the support substrate (25).
摘要翻译：本发明涉及一种用于修改衬底（10）的方法，包括：（a）提供具有用于结合的面（10b）和相对面（10r）的初始衬底（10）; （b）提供支撑衬底（25）; 其中所述初始衬底（10）的接合面（10b）和/或所述支撑衬底（25）的表面中的任一个设置有电磁辐射吸收层（24），其中所述支撑衬底（25）基本上对电磁辐射的波长透明（c）进行接合以经由电磁辐射吸收层（24）将初始衬底（10）的接合面（10b）连接到支撑衬底（25）; （e）通过所述基本透明的支撑衬底（25）进行所述电磁辐射吸收层（24）的照射以引起所述支撑衬底（25）的分离。

35. 发明申请

WO2010015302A2 RELAXATION AND TRANSFER OF STRAINED LAYERS 审中-公开
标题翻译：应变层的松弛和转移
公开(公告)号：WO2010015302A2
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004792
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
发明人： LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention relates a method for the formation of at least partially relaxed strained material on a target substrate, comprising the subsequently performed steps of forming islands from a strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment and transferring the at least partially relaxed strained material islands to the target substrate.
摘要翻译：本发明涉及一种用于在目标基底上形成至少部分松弛的应变材料的方法，包括随后执行的步骤：从中间基底上的应变材料层形成岛，至少部分地通过第一热处理并将至少部分松弛的应变材料岛转移到目标衬底。

36. 发明申请

WO2009150503A1 METHOD FOR PREPARING HYDROPHOBIC SURFACES 审中-公开
标题翻译：制备疏水表面的方法
公开(公告)号：WO2009150503A1
公开(公告)日：2009-12-17
申请号：PCT/IB2009/005791
申请日：2009-05-28
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PECLARD, Nicolas , RADOUANE, Khalid , GAUDIN, Gweltaz , RADU, Ionut , KERDILES, Sébastien
发明人： PECLARD, Nicolas , RADOUANE, Khalid , GAUDIN, Gweltaz , RADU, Ionut , KERDILES, Sébastien
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/02046 , H01L21/76254
摘要： The invention relates to a method for preparing hydrophobic surfaces which find their application in direct silicon bonding and strained material layer growth. The method comprises providing a substrate and subjecting the substrate to a mixed plasma treatment, wherein the mixed plasma comprises a reducing gas plasma, in particular H2, and an inert gas plasma, in particular Ar and/or He.
摘要翻译：本发明涉及一种用于制备疏水性表面的方法，其可用于直接硅键合和应变材料层生长。该方法包括提供衬底并对衬底进行混合等离子体处理，其中混合等离子体包括还原气体等离子体，特别是H2，以及惰性气体等离子体，特别是Ar和/或He。

37. 发明申请

WO2009089969A1 LAYER TRANSFER WITH REDUCTION OF POST-FRACTURE ROUGHNESS 审中-公开
标题翻译：具有减少断裂韧性的层转移
公开(公告)号：WO2009089969A1
公开(公告)日：2009-07-23
申请号：PCT/EP2008/067318
申请日：2008-12-11
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PERSONNIC, Sébastien , BOURDELLE, Konstantin
发明人： PERSONNIC, Sébastien , BOURDELLE, Konstantin
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention provides a method of transferring a layer of a donor substrate onto a receiving substrate, the method comprising : a first step (S10) for hydrogen ions into the donor substrate intended to form a layer of microcavities or platelets; a secondstep (S12) of implanting ions; a step (S13) for bonding the face of the donor substrate with a face of the receiving substrate; a step (S14) for detachment to cause splitting at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, between the two implantation steps, a step (S11) for priming anneal heat treatment carried out at a temperature in the range 300°C to 700°C and for a duration that is less than 10% of the duration necessary to cause splitting at the layer of microcavities or platelets formed in the donor substrate at the temperature employed during said priming anneal heat treatment.
摘要翻译：本发明提供了一种将供体衬底的层转移到接收衬底上的方法，所述方法包括：用于形成一个微腔或血小板层的氢离子进入供体衬底的第一步骤（S10）第二步（S12）注入离子; 用于将所述供体衬底的表面与所述接收衬底的表面接合的步骤（S13）; 用于分离以在形成在供体衬底中的微腔或血小板层分裂的步骤（S14）。该方法还包括在两个注入步骤之间的步骤（S11），用于在300℃至700℃的温度下进行退火热处理并持续时间小于所需持续时间的10％以在所述起动退火热处理期间使用的温度在所述供体基底中形成的微腔或血小板层处分裂。

38. 发明申请

WO2011124321A2 VOLTAGE MATCHED MULTIJUNCTION SOLAR CELL 审中-公开
标题翻译：电压匹配多功能太阳能电池
公开(公告)号：WO2011124321A2
公开(公告)日：2011-10-13
申请号：PCT/EP2011/001337
申请日：2011-03-17
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , GOMBERT, Andreas
发明人： GOMBERT, Andreas
IPC分类号： H01L31/052 , H01L31/075
CPC分类号： H01L31/052 , H01L31/076 , Y02E10/548
摘要： The present invention relates to a (voltage matched multijunction) solar cell with a first solar cell stack and a second solar cell stack and wherein the first solar cell stack and the second solar cell stack are electrically connected parallel to each other.
摘要翻译：本发明涉及具有第一太阳能电池堆和第二太阳能电池堆的（电压匹配多结）太阳能电池，其中第一太阳能电池堆和第二太阳能电池堆彼此并联电连接。

39. 发明申请

WO2010094371A2 RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS 审中-公开
标题翻译：应变材料层的放松和转移
公开(公告)号：WO2010094371A2
公开(公告)日：2010-08-26
申请号：PCT/EP2010/000090
申请日：2010-01-11
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal
发明人： LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal
IPC分类号： H01L21/20 , H01L21/762 , C30B29/38
CPC分类号： H01L21/02664 , C30B29/403 , C30B33/02 , C30B33/06 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/762 , H01L21/76254
摘要： The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
摘要翻译：本发明涉及形成至少部分松弛的应变材料层的方法，该方法包括以下步骤：提供种子基底; 图案化种子基底; 在图案化种子基底上生长应变材料层; 将所述应变材料层从所述图案化种子基底转移到中间基底; 并通过热处理至少部分地松弛应变材料层。

40. 发明申请

WO2010026007A1 A PROGRESSIVE TRIMMING METHOD 审中-公开
标题翻译：一种循序渐进的方法
公开(公告)号：WO2010026007A1
公开(公告)日：2010-03-11
申请号：PCT/EP2009/059961
申请日：2009-07-31
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , BROEKAART, Marcel , MIGETTE, Marion , MOLINARI, Sébastien , NEYRET, Eric
发明人： BROEKAART, Marcel , MIGETTE, Marion , MOLINARI, Sébastien , NEYRET, Eric
IPC分类号： H01L21/304
CPC分类号： H01L21/304 , H01L21/76256 , H01L25/50 , H01L2225/06513 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of trimming a structure (500) comprising a first wafer (200) bonded to a second wafer (300), the first wafer having a chamfered edge. The method comprises a first trimming step (S4) carried out over a first depth (Pd 1 ) comprising the thickness (e 1 ) of the first wafer (101) and over a first width (1d 1 ) determined from the edge of the first wafer (101). A second trimming step (S5) is also carried out over a second depth (Pd 2 ) comprising at least the thickness (e 1 ) of the first wafer (101) and over a second width (1d 2 ) that is less than the first width (1d 1 ).
摘要翻译：本发明提供了一种修整结构（500）的方法，所述结构（500）包括接合到第二晶片（300）的第一晶片（200），所述第一晶片具有倒角边缘。该方法包括在包括第一晶片（101）的厚度（e1）的第一深度（Pd1）上以及从第一晶片（101）的边缘确定的第一宽度（1d1）上执行的第一修整步骤（S4））。第二修整步骤（S5）还在包括至少第一晶片（101）的厚度（e1）并且小于第一宽度（1d1）的第二宽度（1d2）上的第二深度（Pd2）上进行）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式