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    • 35. 发明授权
    • Semiconductor structure for photon detection
    • 用于光子检测的半导体结构
    • US08901690B2
    • 2014-12-02
    • US13551732
    • 2012-07-18
    • Martin PoppBeat De CoiMarco Annese
    • Martin PoppBeat De CoiMarco Annese
    • H01L27/146H01L27/148H01L31/18H01L31/0216H01L31/0232H01L31/101
    • H01L27/1463
    • A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.
    • 一种用于光子检测的半导体结构,包括由具有第一掺杂的半导体材料构成的衬底,安装在衬底的前侧的接触区域,由具有第二掺杂的半导体材料组成的偏置层,其布置在背面 所述接触区域至少部分地与所述偏置层相对,使得重叠区域在横向方向上存在,保护环布置在所述基板的前侧,并且所述保护环设置在所述基板的前侧;以及 围绕接触区域,其中可以在接触区域和保护环之间施加反向电压。 为了实现更具成本效益的生产,重叠区域具有等于接触区域和偏置层之间的距离的至少四分之一的横向范围。
    • 36. 发明授权
    • Method for producing semiconductor components on a substrate, and substrate comprising semiconductor components
    • 在基板上制造半导体部件的方法以及包括半导体部件的基板
    • US08802566B2
    • 2014-08-12
    • US13593933
    • 2012-08-24
    • Martin PoppBeat De CoiMarco Annese
    • Martin PoppBeat De CoiMarco Annese
    • G03F7/20H01L29/96H01L21/3213H01L21/033
    • H01L21/32139H01L21/0337H01L21/0338
    • A method for producing semiconductor components on a substrate including photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer serving as a mask for the second layer is applied, and wherein at least two photolithographic patterning processes are carried out successively for the second layer, wherein, during one of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer, positive ramp angles α are produced at the patterning edges of the third layer, as a result of which the structures remaining free, given a thickness h of the third layer, decrease in size by a value D=2*h/tan α.
    • 一种用于在包括光刻图案步骤的基板上制造半导体部件的方法,其中施加了在基板上形成要构图的第一层的方法,并且施加用作待图案化第一层的掩模层的第二层,其中 施加用作第二层的掩模的第三层,并且其中对于第二层连续执行至少两个光刻图案化工艺,其中在一个图案化工艺期间,在制造由感光材料制成的结构之后 层,用于在第三层提供用于图案化工艺的掩模层,在第三层的图案化边缘处产生正斜面角α,结果,给定第三层的厚度h,结构保持游离 ,尺寸减小值D = 2 * h /tanα。
    • 40. 发明申请
    • TOF DISTANCE SENSOR AND METHOD FOR OPERATION THEREOF
    • TOF距离传感器及其操作方法
    • US20140160459A1
    • 2014-06-12
    • US14100319
    • 2013-12-09
    • ESPROS Photonics AG
    • Dieter HUBERMarkus LEDERGERBER
    • G01S17/08
    • G01S17/08G01S7/4865
    • A TOF distance sensor is proposed, for measuring a distance from an object, comprising an electronics apparatus for generating a modulation signal and for generating four correlation signals, which are phase shifted with respect to one another and which have the same period as the modulation signal; a radiation source for emitting radiation, which is modulated by the modulation signal; a reception apparatus, which has a predetermined spatial relationship with respect to the radiation source, for receiving radiation reflected by the object; a correlation apparatus for correlating the received radiation or a corresponding variable with respectively one of the four correlation signals in order to form four corresponding correlation values; a difference-forming apparatus for forming two difference correlation values from the difference between respectively two of the correlation values; a calculation apparatus embodied to calculate the distance with a predetermined linear dependence on the two difference correlation values.
    • 提出了一种用于测量距离物体的距离的TOF距离传感器,包括用于产生调制信号并产生四个相关信号的电子设备,它们相对于彼此相移并且具有与调制信号相同的周期 ; 用于发射由调制信号调制的辐射的辐射源; 接收装置,其相对于所述辐射源具有预定的空间关系,用于接收由所述物体反射的辐射; 相关装置,用于将接收到的辐射或相应变量分别与四个相关信号中的一个相关,以形成四个对应的相关值; 差分形成装置,用于根据相应的两个相关值之间的差异形成两个差分相关值; 一种计算装置,体现为以两个差分相关值以预定的线性依赖性计算距离。