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    • 31. 发明申请
    • Universal serial bus data transport method and device
    • 通用串行总线数据传输方法及装置
    • US20060282577A1
    • 2006-12-14
    • US11339173
    • 2006-01-24
    • Yu HuangZhou LuFan Chen
    • Yu HuangZhou LuFan Chen
    • G06F13/38
    • G06F13/385
    • A Universal Serial Bus data transport method and its device is disclosed. Data transport is performed through a high-speed transport technique based on a Universal Serial Bus, which consists of Universal Serial Bus protocol for communication between the device and the host, and SCSI protocol for interaction between the device and the upper driver layer. A data transport device using the Universal Serial Bus thus uses the embedded driver inside the operating system, which may be self-loaded/self-initialized, and have high data transport speed, and convenient to use.
    • 公开了一种通用串行总线数据传输方法及其装置。 通过基于通用串行总线的高速传输技术来执行数据传输,该通用串行总线由用于设备和主机之间的通信的通用串行总线协议和用于设备与上层驱动器层之间的交互的SCSI协议组成。 因此,使用通用串行总线的数据传输装置使用操作系统内的嵌入式驱动器,其可以是自载/自初始化,并具有高数据传输速度,并且使用方便。
    • 35. 发明申请
    • METHOD FOR MANUFACTURING SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR
    • 硅锗绝缘双极晶体管的制造方法
    • US20120064688A1
    • 2012-03-15
    • US13229570
    • 2011-09-09
    • Fan ChenXionbing ChenZhengliang Zhou
    • Fan ChenXionbing ChenZhengliang Zhou
    • H01L21/331
    • H01L21/26586H01L21/26513H01L29/0821H01L29/66242H01L29/7378
    • A manufacturing method of a SiGe HBT is disclosed. Alter an emitter region is formed, an ion implantation is performed with a tilt angle to a base region by using an extrinsic base ion implantation process; boron ions are implanted during the extrinsic base ion implantation with an implantation dose from 1e15 to 1e16 cm−2, an implantation energy from 5 to 30 KeV, and a tilt angle from 5 to 30 degrees. The tilt angle enables the implantation of P-type impurities into the part of the intrinsic base region at the bottom of the emitter window dielectric layer as well as the extrinsic base region, so that the base region excluding the part of the intrinsic base region in contact with the emitter region is entirely doped with P-type impurities, thus reducing the base resistance and improving the frequency characteristic of a transistor without needing to reduce its size.
    • 公开了SiGe HBT的制造方法。 改变发射极区域,通过使用外部基极离子注入工艺,以与基极区域倾斜的角度进行离子注入; 在离子注入期间,以离子注入量为1e15〜1e16cm-2,注入能量为5〜30KeV,倾斜角为5〜30度,注入硼离子。 倾斜角使得能够将P型杂质注入发射极窗电介质层的底部的本征基区的一部分以及外部碱性区,使得除了本征基区的部分以外的基区 与发射极区域的接触完全掺杂有P型杂质,从而降低了基极电阻并提高了晶体管的频率特性,而不需要减小其尺寸。
    • 38. 发明申请
    • SYSTEM AND METHODS FOR CONTROLLING PROPERTIES OF NANOJUNCTION DEVICES
    • 用于控制纳米器件性质的系统和方法
    • US20090249522A1
    • 2009-10-01
    • US12414069
    • 2009-03-30
    • Bingqian XuFan Chen
    • Bingqian XuFan Chen
    • G12B21/08
    • G01Q60/30G01Q60/40
    • An exemplary, highly integrated, SPM-based system for measuring the conductivity and/or force of substance under programmable engaging/stretching processes is described. A sample bias is applied across two electrodes. A substance to be measured is sandwiched between them. A first electrode is first brought relative to a second electrode (engaging) in programmable pathways that can be described as stretching distance versus time curves. The process of engaging the electrodes continues until a certain current reached, a certain force reached and whichever case happens first. The electrodes are then separated (stretching) in programmable pathways that can be described as stretching distance versus time curves. A periodic modulation can be applied to the engaging/stretching process to realize different stretch pathways. The sample bias across the electrodes is kept constant or swept in a programmable shape over time, described as a voltage-versus time curve. The conductivity, engaging/stretching distance, and/or force are measured simultaneously.
    • 描述了用于在可编程接合/拉伸过程下测量物质的导电性和/或力的示例性,高度集成的基于SPM的系统。 样品偏置被施加在两个电极上。 被测物质夹在它们之间。 首先将第一电极相对于可描述为拉伸距离对时间曲线的可编程路径中的第二电极(接合)。 接合电极的过程继续进行直到达到一定电流,达到一定的力并且首先发生任何情况。 然后在可编程路径中分离(拉伸)电极,可以描述为拉伸距离对时间曲线。 周期调制可以应用于接合/拉伸过程以实现不同的拉伸路径。 跨越电极的样品偏置保持恒定或随时间扫描为可编程形状,被描述为电压对时间曲线。 同时测量电导率,接合/拉伸距离和/或力。