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31. 发明授权

US07116527B1 Magnetoresistance effect device having hard magnetic film structural body 失效
标题翻译：具有硬磁性膜结构体的磁阻效应器件
公开(公告)号：US07116527B1
公开(公告)日：2006-10-03
申请号：US08940020
申请日：1997-09-29
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译：含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层）并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

32. 发明授权

US06313973B1 Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same 失效
标题翻译：交换耦合膜的叠层磁致伸缩元件，反铁磁膜和铁磁膜以及使用它的磁盘驱动器
公开(公告)号：US06313973B1
公开(公告)日：2001-11-06
申请号：US09343270
申请日：1999-06-30
申请人： Hiromi Fuke , Kazuhiro Saito , Katsuhiko Koui , Hideaki Fukuzawa , Akiko Saito , Hitoshi Iwasaki
发明人： Hiromi Fuke , Kazuhiro Saito , Katsuhiko Koui , Hideaki Fukuzawa , Akiko Saito , Hitoshi Iwasaki
IPC分类号： G11B530
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3263 , H01F10/3268 , H01F10/3272
摘要： A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.
摘要翻译：磁阻元件包括具有下层，反铁磁膜和铁磁膜的交换耦合膜，其按顺序层压，下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属，其具有比反铁磁膜的最近邻原子距离更长。利用这种结构，可以改善交换耦合场并且能够长时间地满足稳定的输出。具有双自旋阀结构的磁阻元件具有磁化调节层，其通过反并联连接层反铁磁连接到被钉扎层，以调节每个磁化调节层的饱和磁化强度和被钉扎层的厚度。此外，磁阻头使用巨磁电阻效应，并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。钉扎层具有一对铁磁层，其具有不同的组成和不同的矫顽力，并且经由连接层彼此反铁磁连接，使得钉扎层的有效交换耦合场为200Oe以上。

33. 发明授权

US07471492B2 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录/重放装置
公开(公告)号：US07471492B2
公开(公告)日：2008-12-30
申请号：US10895844
申请日：2004-07-22
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译：磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

34. 发明授权

US07289305B2 Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录和再现装置
公开(公告)号：US07289305B2
公开(公告)日：2007-10-30
申请号：US11074643
申请日：2005-03-09
申请人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Fuke , Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译：磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性间隔层和无磁化层。

35. 发明授权

US07719799B2 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录/重放装置
公开(公告)号：US07719799B2
公开(公告)日：2010-05-18
申请号：US12314232
申请日：2008-12-05
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译：磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

36. 发明申请

US20050111145A1 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US20050111145A1
公开(公告)日：2005-05-26
申请号：US10954545
申请日：2004-10-01
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： C22C19/05 , G11B5/127 , G11B5/33 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F41/32 , H01F41/325 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.
摘要翻译：磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。无磁化层设置在自旋过滤层和非磁性金属层之间。磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。

37. 发明申请

US20050057862A1 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录/重放装置
公开(公告)号：US20050057862A1
公开(公告)日：2005-03-17
申请号：US10895844
申请日：2004-07-22
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/33 , G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译：磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

38. 发明申请

US20090097166A1 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus 有权
标题翻译：磁阻元件，磁头和磁记录/重放装置
公开(公告)号：US20090097166A1
公开(公告)日：2009-04-16
申请号：US12314232
申请日：2008-12-05
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译：磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

39. 发明授权

US07495870B2 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US07495870B2
公开(公告)日：2009-02-24
申请号：US10954545
申请日：2004-10-01
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F41/32 , H01F41/325 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.
摘要翻译：磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。无磁化层设置在自旋过滤层和非磁性金属层之间。磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。

40. 发明申请

US20050168887A1 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory 有权
标题翻译：磁阻元件，磁头，磁再现装置和磁存储器
公开(公告)号：US20050168887A1
公开(公告)日：2005-08-04
申请号：US11017965
申请日：2004-12-22
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki
IPC分类号： G11B5/39 , G11C11/16 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10 , G11B5/33 , G11B5/127
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3259 , H01F10/3263 , H01F41/325
摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.
摘要翻译：磁阻元件包括磁阻膜，其具有磁化被固定在一个方向上的磁化固定层，非磁性中间层和磁化自由层，其磁化方向取决于外部磁场而变化，其中磁化固定层或非磁性中间层包括绝缘体和电连接到磁阻膜的一对电极，以便在基本垂直于磁阻膜的平面的方向上提供感测电流。无磁化层包括以体心立方结构的体心立方层，体心立方层的厚度为2nm以上。

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