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31. 发明授权

US07906784B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07906784B2
公开(公告)日：2011-03-15
申请号：US12421840
申请日：2009-04-10
申请人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
发明人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
IPC分类号： H01L33/00
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/283 , H01L29/78603 , H01L51/0097 , H01L2224/16225 , H01L2924/12044 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.
摘要翻译：本发明的目的是提供一种具有柔性和抗弯曲等物理变化的半导体器件以及半导体器件的制造方法。本发明的半导体器件包括设置在柔性基板上的多个晶体管，每个晶体管具有半导体膜，在半导体膜之间设置有栅极绝缘膜的栅电极和设置成覆盖该半导体膜的层间绝缘膜栅电极和设置在多个晶体管之间的弯曲部分，其中通过用具有较低弹性模量的材料填充形成在层间绝缘膜中的开口，具有较低玻璃化转变点的材料，或者具有比层间绝缘膜高的塑性的材料。

32. 发明申请

US20100277448A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20100277448A1
公开(公告)日：2010-11-04
申请号：US12769298
申请日：2010-04-28
申请人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
发明人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
IPC分类号： G06F3/038
CPC分类号： H05K1/189 , G02F1/133305 , G02F1/13452 , G02F1/167 , G06F3/0412 , G06F2203/04102 , G09G3/2096 , G09G3/3208 , G09G3/36 , G09G3/3611 , G09G5/003 , G09G5/39 , G09G2300/0421 , G09G2300/0478 , H01L27/1218 , H01L27/1225 , H05K2201/10128
摘要： The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
摘要翻译：显示装置包括：柔性显示面板，包括显示部分，扫描线和信号线彼此交叉; 用于支撑柔性显示面板的端部的支撑部分; 信号线驱动器电路，用于向信号线输出信号，该信号线被提供给支撑部分; 以及扫描线驱动器电路，用于向垂直于或基本上垂直于支撑部分的方向向显示面板的柔性表面设置的扫描线输出信号。

33. 发明申请

US20090039352A1 Display device and electronic device having the display device, and method for manufacturing thereof 有权
标题翻译：具有显示装置的显示装置和电子装置及其制造方法
公开(公告)号：US20090039352A1
公开(公告)日：2009-02-12
申请号：US12222259
申请日：2008-08-06
申请人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
发明人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/66765 , H01L29/04 , H01L29/41733 , H01L29/78696
摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.
摘要翻译：提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层以及设置在杂质半导体层上方并与其接触的源电极和漏电极。非晶半导体膜的厚度大于微晶半导体膜的厚度。

34. 发明授权

US08295104B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08295104B2
公开(公告)日：2012-10-23
申请号：US12618161
申请日：2009-11-13
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C7/00
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

35. 发明申请

US20120009698A1 DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法和制造装置的装置
公开(公告)号：US20120009698A1
公开(公告)日：2012-01-12
申请号：US13234294
申请日：2011-09-16
申请人： Osamu Nakamura , Yoshitaka Moriya
发明人： Osamu Nakamura , Yoshitaka Moriya
IPC分类号： H01L33/48
CPC分类号： H01L51/56 , H01L51/0004 , H01L51/0024
摘要： The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material.
摘要翻译：本发明提供了一种有效制造薄膜型显示装置的方法，以及制造大尺寸薄膜型显示装置的方法以及用于制造薄膜型显示装置的装置。一种用于制造薄膜型显示装置的装置，包括：传送装置，用于传送构成显示装置的集成电路的基板; 第一分离装置，用于通过将第一片材粘合到集成电路的一个表面来将集成电路与基板分离; 第二分离装置，用于通过将第二片材粘附到集成电路的另一个表面来分离集成电路与第一片材; 用于在所述集成电路上形成导电膜和绝缘膜中的一者或两者的处理装置; 以及密封装置，用于利用第二片材材料和第三片材材料密封经处理的集成电路。

36. 发明授权

US08013338B2 Display device and electronic device having the display device, and method for manufacturing thereof 有权
标题翻译：具有显示装置的显示装置和电子装置及其制造方法
公开(公告)号：US08013338B2
公开(公告)日：2011-09-06
申请号：US12222259
申请日：2008-08-06
申请人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
发明人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
IPC分类号： H01L29/04
CPC分类号： H01L29/66765 , H01L29/04 , H01L29/41733 , H01L29/78696
摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.
摘要翻译：提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层以及设置在杂质半导体层上方并与其接触的源电极和漏电极。非晶半导体膜的厚度大于微晶半导体膜的厚度。

37. 发明授权

US07622736B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07622736B2
公开(公告)日：2009-11-24
申请号：US11579145
申请日：2005-12-01
申请人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
发明人： Yoshitaka Moriya , Hiroko Abe , Mikio Yukawa , Ryoji Nomura
IPC分类号： H01L23/58
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/22
摘要： It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
摘要翻译：本发明的目的是提供一种易于制造数据的易失性半导体器件及其制造方法。本发明的特征在于，半导体器件包括：元件形成层，其包括设置在基板上的第一晶体管和第二晶体管; 设置在所述元件形成层上的存储元件; 以及设置在所述存储元件上方的传感器部分，其中所述存储元件具有包括第一导电层和有机化合物层的层状结构以及第二导电层，所述第一导电层与所述第一晶体管电连接，传感器部分电连接到第二晶体管。

38. 发明授权

US08716834B2 Semiconductor device including antenna 有权
标题翻译：半导体器件包括天线
公开(公告)号：US08716834B2
公开(公告)日：2014-05-06
申请号：US11792372
申请日：2005-12-21
申请人： Kiyoshi Kato , Yoshitaka Moriya
发明人： Kiyoshi Kato , Yoshitaka Moriya
IPC分类号： H01L21/02
CPC分类号： G06K19/0701 , G06K19/07749 , H01L21/84 , H01L27/12
摘要： A semiconductor device that can prevent reduction in the amplitude of electromagnetic waves transmitted from a reader/writer, and can prevent heating of an element forming layer due to a change in a magnetic field. The semiconductor device of the invention has an element forming layer formed over a substrate, and an antenna connected to the element forming layer. The element forming layer has at least wires such as a power supply wire and a ground wire that are arranged in a non-circular shape. The element forming layer and the antenna may be provided so as to overlap each other at least partially. The antenna may be provided above or below the element forming layer.
摘要翻译：一种半导体器件，其能够防止从读取器/写入器发送的电磁波的振幅的降低，并且可以防止由于磁场的变化而导致的元件形成层的加热。本发明的半导体器件具有形成在衬底上的元件形成层和连接到元件形成层的天线。元件形成层至少具有布置成非圆形形状的电线，例如电源线和接地线。元件形成层和天线可以设置成至少部分地彼此重叠。天线可以设置在元件形成层的上方或下方。

39. 发明授权

US07688624B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07688624B2
公开(公告)日：2010-03-30
申请号：US11547905
申请日：2005-11-22
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C11/34
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

40. 发明授权

US5085708A Lignosulfonates, oxycarboxylates, polycarboxylates, and polyoxalklene, alkylaryl and alkyl ethers admixtures for ultra-dry mix concrete 失效
标题翻译：木质素磺酸盐，羟基羧酸盐，聚羧酸盐和聚氧代烯烃，烷基芳基和烷基醚混合物用于超干混合混凝土
公开(公告)号：US5085708A
公开(公告)日：1992-02-04
申请号：US645386
申请日：1991-01-24
申请人： Yoshitaka Moriya , Hiroshi Nomachi , Makoto Takada , Yukihide Takatsu , Kenichi Umezawa
发明人： Yoshitaka Moriya , Hiroshi Nomachi , Makoto Takada , Yukihide Takatsu , Kenichi Umezawa
IPC分类号： C04B24/32 , C04B24/04 , C04B24/18 , C04B24/26 , C04B28/02
CPC分类号： C04B28/02 , C04B2111/00068 , Y02W30/92 , Y10S106/01
摘要： An admixture for ultra-dry-mix concrete is disclosed containing one or more varieties of cement dispersing agents (A) selected from a group consisting of lignosulfonates, oxycarboxylates and polycarboxylates, and in addition, containing one or more varieties of nonionic surface-active agents (B) selected from a group consisting of polyoxyalkylene alkylaryl and alkyl ethers with a hydrophilic-lipophilic balance (HLB-value) of 8 to 17.
摘要翻译：公开了一种用于超干混混凝土的混合物，其包含一种或多种选自木素磺酸盐，羟基羧酸盐和多羧酸盐的水泥分散剂（A），并且另外含有一种或多种非离子表面活性剂（B）选自聚氧化烯烷基芳基和亲水亲油平衡（HLB值）为8〜17的烷基醚。

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