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31. 发明申请

US20060148207A1 Method of dual bird's beak locos isolation 失效
标题翻译：双鸟喙的隔离方法
公开(公告)号：US20060148207A1
公开(公告)日：2006-07-06
申请号：US11319588
申请日：2005-12-29
申请人： Chang Kim
发明人： Chang Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76202 , Y10S438/981
摘要： A method of dual bird's beak LOCOS may reduce a design rule for a more cost-effective logic device formation. The method may also form a LOCOS layer having a smooth bird's beak to fabricate a stable high-voltage device. The method includes steps of defining a low-voltage device area for a logic device and a high-voltage device area for a high-voltage device, forming a first pad layer in the low-voltage device area and a second pad layer in the high-voltage device area, the first pad layer being thinner than the second pad layer, and forming LOCOS type device isolation layers having bird's beaks differing in size in each of the low-voltage device area and the high-voltage device area, by oxidizing a portion of the semiconductor substrate exposed by a hard mask.
摘要翻译：双鸟喙LOCOS的方法可以减少用于更具成本效益的逻辑器件形成的设计规则。该方法还可以形成具有平滑鸟喙的LOCOS层，以制造稳定的高压装置。该方法包括以下步骤：定义用于逻辑器件的低电压器件区域和用于高电压器件的高电压器件区域，在低电压器件区域中形成第一焊盘层，以及在高电压器件区域中形成第二焊盘层所述第一焊盘层比所述第二焊盘层薄，并且在所述低压器件区域和所述高压器件区域的每一个中形成具有尺寸不同的鸟嘴的LOCOS型器件隔离层，通过氧化通过硬掩模曝光的半导体衬底的一部分。

32. 发明申请

US20060148203A1 Semiconductor device and fabricating method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060148203A1
公开(公告)日：2006-07-06
申请号：US11320910
申请日：2005-12-30
申请人： Chang Kim
发明人： Chang Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/76232 , H01L21/823462 , H01L21/823481
摘要： A semiconductor device and fabricating method thereof are provided. A dual gate oxide layer is formed by thermal oxidation after carrying out a prescribed pre-processing on an STI edge, which results in a high quality oxide layer by thermal oxidation and a uniformly maintained gate oxide layer thickness of a high voltage device area. The present invention includes a semiconductor substrate divided into an active area and an inactive area, the active area including a high voltage device area and a low voltage device area; a device isolation layer on the inactive area of the semiconductor substrate; and a gate oxide layer on the high voltage device area of the semiconductor substrate, the gate oxide layer having a uniform thickness.
摘要翻译：提供了一种半导体器件及其制造方法。在STI边缘上进行规定的预处理后，通过热氧化形成双栅氧化层，通过热氧化形成高质量的氧化物层，并且均匀维持高电压器件面积的栅氧化层厚度。本发明包括分为有源区和非工作区的半导体衬底，有源区包括高电压器件面积和低电压器件面积; 半导体衬底的非活性区域上的器件隔离层; 以及在半导体衬底的高电压器件区域上的栅氧化层，栅氧化层具有均匀的厚度。

33. 发明申请

US20060145620A1 Plasma display apparatus 失效
标题翻译：等离子显示装置
公开(公告)号：US20060145620A1
公开(公告)日：2006-07-06
申请号：US11245258
申请日：2005-10-07
申请人： Byungjun Mun , Chang Kim
发明人： Byungjun Mun , Chang Kim
IPC分类号： H01J17/02
CPC分类号： H01J11/46 , H01J11/12
摘要： A plasma display apparatus is provided. The plasma display apparatus includes a panel display unit in which a plurality of electrodes are formed, and a panel structure for surrounding at least a portion of the panel display unit. The panel structure includes at least one electrode pad extending from at least one of the electrodes of the panel display unit, at least one connector for applying driving signals to the at least one electrode pad, and a coating layer including a flame-retardant material and coating the at least one electrode pad and the at least one connector.
摘要翻译：提供了一种等离子体显示装置。等离子显示装置包括其中形成有多个电极的面板显示单元和用于围绕面板显示单元的至少一部分的面板结构。面板结构包括从面板显示单元的至少一个电极延伸的至少一个电极焊盘，用于向至少一个电极焊盘施加驱动信号的至少一个连接器，以及包括阻燃材料的涂层和涂覆所述至少一个电极焊盘和所述至少一个连接器。

34. 发明申请

US20060113527A1 Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
标题翻译：星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管
公开(公告)号：US20060113527A1
公开(公告)日：2006-06-01
申请号：US11116326
申请日：2005-04-28
申请人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
发明人： Kook Han , Eun Jeong , Chang Kim , Eun Lee
IPC分类号： H01L51/00 , H01B1/12
CPC分类号： H01L51/0068 , H01L51/0036 , H01L51/0052 , H01L51/0062 , H01L51/0067 , H01L51/0069 , H01L51/007 , H01L51/0071 , H01L51/0072 , H01L51/0545
摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.
摘要翻译：具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

35. 发明申请

US20060099499A1 Lithium rechargeable battery 审中-公开
标题翻译：锂可充电电池
公开(公告)号：US20060099499A1
公开(公告)日：2006-05-11
申请号：US11239080
申请日：2005-09-30
申请人： Chang Kim , Young Sohn
发明人： Chang Kim , Young Sohn
IPC分类号： H01M2/02
CPC分类号： H01M2/0202 , H01M10/052 , H01M10/0587 , H01M2002/0205
摘要： A lithium rechargeable battery includes an electrode assembly having a first electrode, a second electrode, and a separator interposed between them, a can having an opening to contain the electrode assembly, and a cap plate coupled to the top of the can. A side of the can is asymmetrical with respect to another side thereof about at least one of a long axis, short axis, and central point of its cross section. The lithium rechargeable battery has a predetermined space formed between the can and the electrode assembly for improved electrolyte injection and increased manufacturing efficiency and power storage capacity of the battery.
摘要翻译：锂可再充电电池包括具有第一电极，第二电极和介于它们之间的隔膜的电极组件，具有容纳电极组件的开口的罐和连接到罐的顶部的盖板。关于其横截面的长轴，短轴和中心点中的至少一个，罐的侧面相对于其另一侧是不对称的。锂可再充电电池具有形成在罐和电极组件之间的预定空间，用于改进电解液注入，并且提高了电池的制造效率和蓄电能力。

36. 发明申请

US20060092665A1 Light emitting diode and backlight apparatus having the same 审中-公开
标题翻译：发光二极管及其背光装置
公开(公告)号：US20060092665A1
公开(公告)日：2006-05-04
申请号：US11064969
申请日：2005-02-25
申请人： Chang Kim , Young Soung
发明人： Chang Kim , Young Soung
IPC分类号： F21V7/04
CPC分类号： G02B6/009 , G02B6/0031 , G02B6/0073
摘要： An LED and an LCD backlight apparatus having the same. In the LED, a lower side wall projected from the LED between and beyond LED terminals, such that the bottom of an LED window in the vicinity of the lower side wall is positioned flush with or under the terminals, and a recess is formed in a board of the backlight apparatus to receive the lower side wall. The height of the LED mounted on the backlight apparatus can be reduced and light efficiency can be improved.
摘要翻译：具有该LED和LCD背光装置的LED。在LED中，从LED端子之间和外部LED之间突出的下侧壁，使得在下侧壁附近的LED窗口的底部与端子齐平或相对地设置在凹部中，用于接收下侧壁的背光装置的板。可以降低安装在背光装置上的LED的高度，并且可以提高光效率。

37. 发明申请

US20060088950A1 Fabrication method of multi-wavelength semiconductor laser device 有权
标题翻译：多波长半导体激光器件的制作方法
公开(公告)号：US20060088950A1
公开(公告)日：2006-04-27
申请号：US11247935
申请日：2005-10-11
申请人： Jin Kim , Su Lee , Chang Kim , Sang Han , Keun Song , Tae Kim , Seok Choi
发明人： Jin Kim , Su Lee , Chang Kim , Sang Han , Keun Song , Tae Kim , Seok Choi
IPC分类号： H01L21/36
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
摘要翻译：本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。然后，形成基板上的第一电介质掩模，仅露出第一区域。然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。然后，形成基板上的第二电介质掩模，仅露出第二区域。然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

38. 发明申请

US20060048548A1 Washing machine 审中-公开
标题翻译：洗衣机
公开(公告)号：US20060048548A1
公开(公告)日：2006-03-09
申请号：US11110794
申请日：2005-04-21
申请人： Chang Park , Hyun Kim , Chang Kim
发明人： Chang Park , Hyun Kim , Chang Kim
IPC分类号： D06F33/00 , D06F35/00
CPC分类号： D06F35/006 , D06F2202/06 , D06F2204/06
摘要： A washing machine for minimizing damage to laundry and enabling effective washing of the laundry. The washing machine includes a water tub, a drum, and a control unit. The drum is installed in the water tub so as to rotate in a forward and/or a reverse direction. The control unit controls the rotation directions and angles of the rotation of the drum to cause an asymmetric swing motion of the drum.
摘要翻译：一种用于使对衣物的损害最小化并能有效洗涤衣物的洗衣机。洗衣机包括水桶，滚筒和控制单元。滚筒安装在水桶中，以便在向前和/或反向方向上旋转。控制单元控制滚筒的旋转方向和旋转角度以引起滚筒的不对称的摆动运动。

39. 发明申请

US20050246622A1 Method and apparatus for managing bookmark information for content stored in a networked media server 有权
标题翻译：用于管理存储在联网媒体服务器中的内容的书签信息的方法和装置
公开(公告)号：US20050246622A1
公开(公告)日：2005-11-03
申请号：US11120930
申请日：2005-05-02
申请人： Sung Ahn , Chang Kim
发明人： Sung Ahn , Chang Kim
IPC分类号： G06F17/00 , G06F17/30 , G11B27/10 , G11B27/32 , H04L12/28 , H04L29/08
CPC分类号： H04L12/2812 , G06F17/30884 , G11B27/105 , G11B27/32 , H04L12/2803 , H04L67/02 , H04L67/16 , Y10S707/99931 , Y10S707/99933
摘要： A method and apparatus for managing bookmark information of a media server through a network based on the UPnP AV standard is disclosed. If a request for bookmarking a content item is made, a bookmark item is created and the created bookmark item is linked to the content item by adding the ID of the created bookmark item to the property information of the content item and recording the ID of the content item to be bookmarked in the created bookmark item.
摘要翻译：公开了一种通过基于UPnP AV标准的网络管理媒体服务器的书签信息的方法和装置。如果进行了对内容项目进行加书签的请求，则通过将所创建的书签项目的ID添加到内容项目的属性信息来创建书签项目并将创建的书签项目链接到内容项目，并且记录要在创建的书签项目中加入书签的内容项目。

40. 发明申请

US20050143917A1 METHOD FOR SEARCHING FOR DIP ANGLE USING TILT-COMPENSATED ELECTRONIC COMPASS 失效
标题翻译：使用倾斜补偿电子指南针搜索DIP角的方法
公开(公告)号：US20050143917A1
公开(公告)日：2005-06-30
申请号：US10770503
申请日：2004-02-04
申请人： Han Jo , Won Choi , Chang Kim , Jin Kang , Oh Kwon , Ha Jeong
发明人： Han Jo , Won Choi , Chang Kim , Jin Kang , Oh Kwon , Ha Jeong
IPC分类号： G01C17/32 , G01C17/38 , G01C9/00
CPC分类号： G01C17/38
摘要： A method for finding a dip angle in a tilt-compensated electronic compass. The method finds a dip angle suitable for current environments to calculate a more accurate azimuth angle when measuring an azimuth angle of the tilt-compensated electronic compass. The method for finding an optimal dip angle in a prescribed environment using an electronic compass containing a two-axis geomagnetic sensor includes the steps of: a) setting a predetermined azimuth angle indicative of a horizontal status of a geomagnetic sensor to a reference azimuth angle; b) if the electronic compass is slightly tilted on the basis of the reference azimuth angle, stepwise-increasing a dip angle within a predetermined dip angle search range, and calculating azimuth angles associated with individual dip angles; c) comparing the calculated azimuth angles with the prescribed reference azimuth angle, and finding one azimuth angle, which is the closest to the reference azimuth angle, from among the calculated azimuth angles; and d) setting the dip angle applied to the found azimuth angle to a specific dip angle associated with a corresponding azimuth angle, such that a more accurate azimuth angle can be detected by the tilt-compensated electronic compass containing a two-axis geomagnetic sensor on the basis of the calculated dip angle.
摘要翻译：用于在倾斜补偿电子罗盘中找到倾角的方法。该方法找到适合当前环境的倾角，以便在测量倾斜补偿电子罗盘的方位角时计算更准确的方位角。使用包含双轴地磁传感器的电子罗盘在规定环境中找到最佳倾角的方法包括以下步骤：a）将表示地磁传感器的水平状态的预定方位角设定为参考方位角; b）如果电子罗盘基于参考方位角略微倾斜，则在预定倾角搜索范围内逐步增加倾角，并计算与各个倾角相关的方位角; c）将所计算的方位角与规定的参考方位角进行比较，并从计算出的方位角中找到最接近参考方位角的一个方位角; 以及d）将应用于所找到的方位角的倾角设置为与相应方位角相关联的特定倾角，使得可以通过包含两轴地磁传感器的倾斜补偿电子罗盘来检测更准确的方位角计算倾角的基础。

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