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    • 36. 发明授权
    • Method for fabricating a semiconductor device using implantation and
subsequent annealing to eliminate defects
    • 使用注入和随后退火制造半导体器件以消除缺陷的方法
    • US5407838A
    • 1995-04-18
    • US196795
    • 1994-02-15
    • Tetsuya OhnishiKazushi Naruse
    • Tetsuya OhnishiKazushi Naruse
    • H01L21/265H01L21/331H01L29/73H01L29/732
    • H01L21/26506H01L21/26513H01L29/66272Y10S148/024Y10S438/966Y10S438/98
    • A method for fabricating a semiconductor device including carrying out an ion implantation into a predetermined region of a single-crystal silicon substrate to form therein an amorphized ion-implanted layer according to any one of the methods: (A) implanting an ion of an atom serving as carrier into the predetermined region, followed by implanting an ion of an electrically inert atom or molecule into the region, (B) implanting an ion of an electrically inert atom or molecule in the region, followed by implanting an ion of an atom serving as carrier in the region, and (C) implanting an ion of a molecule in which an atom serving as carrier is bonded to an electrically inert atom; annealing the substrate in an inert atmosphere to crystallize the amorphized ion-implanted layer again; and further annealing the substrate in an oxidizing atmosphere to eliminate defects at the interface of the substrate and the ion implantation layer.
    • 一种用于制造半导体器件的方法,包括根据以下方法中的任一种方法将离子注入到单晶硅衬底的预定区域中以形成非晶化离子注入层:(A)注入原子离子 作为载体进入预定区域,然后将电惰性原子或分子的离子注入该区域,(B)在该区域中注入电惰性原子或分子的离子,随后注入一个原子的离子 作为该区域的载体,(C)将其中作为载体的原子键合的分子的离子注入到电惰性的原子上; 在惰性气氛中对衬底退火,再次使非晶化离子注入层结晶; 并且在氧化气氛中进一步退火衬底以消除衬底和离子注入层的界面处的缺陷。