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31. 发明申请

US20070167023A1 Manufacturing method for wiring 有权
标题翻译：接线方法
公开(公告)号：US20070167023A1
公开(公告)日：2007-07-19
申请号：US11715468
申请日：2007-03-08
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , C23C16/45589 , C23C16/509 , C23C16/54 , H01J2237/3342 , H01L21/2855 , H01L21/28562 , H01L21/312 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L51/0017 , H01L51/0022 , H01L51/5206 , H01L51/56
摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.
摘要翻译：在通过旋涂形成抗蚀剂用膜的情况下，存在要浪费的抗蚀剂材料，根据需要添加边缘清洁处理。此外，当使用真空装置在基板上形成薄膜时，需要用于抽真空室内的专用装置或设备，这增加了制造成本。本发明的特征在于包括：通过CVD法，蒸发法或溅射法以选择性方式在具有电介质表面的基板上形成导电层的步骤; 将化合物排出以形成抗蚀剂掩模以与导电层接触的步骤; 在大气压或接近大气压的压力下使用抗蚀剂掩模的等离子体发生装置蚀刻导电层的步骤; 以及在大气压或接近大气压的压力下用等离子体产生装置对抗蚀剂掩模进行灰化的步骤。利用上述特征，提高了材料的使用效率，实现了制造成本的降低。

32. 发明申请

US20070114921A1 Light Emitting Device and Method of Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20070114921A1
公开(公告)日：2007-05-24
申请号：US11623618
申请日：2007-01-16
申请人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
IPC分类号： H01J61/52 , H01J1/62 , H01J7/24
CPC分类号： H01L27/3248 , H01L27/3211 , H01L27/3216 , H01L27/322 , H01L27/3246 , H01L27/3272 , H01L27/3276 , H01L27/3279 , H01L51/5212 , H01L51/5228 , H01L51/5253 , H01L2251/5315 , Y10S257/929
摘要： To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
摘要翻译：通过大屏幕提供具有高清晰度的像素部分的可靠性高的发光装置。根据本发明的发光器件，在设置在像素电极之间的绝缘体（24）上形成由金属膜构成的辅助电极（21），由此形成由透明导电膜形成的导电层（20）与辅助电极接触可以使电阻较小，薄。此外，辅助电极（21）用于实现与下层电极的连接，由此可以用形成在EL层上的透明导电膜将电极引出。此外，形成由层压的含有氢的膜和氮化硅膜构成的保护膜（32），由此可以实现高可靠性。

33. 发明授权

US07180093B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180093B2
公开(公告)日：2007-02-20
申请号：US10697941
申请日：2003-10-31
申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/15
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：本发明的目的是通过将要剥离的层粘贴到各种基材上来提供照明的半导体器件及其制造方法。在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板用粘合材料粘贴在被剥离层上，然后通过蚀刻或抛光仅去除密封基板。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

34. 发明授权

US07141822B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07141822B2
公开(公告)日：2006-11-28
申请号：US10066542
申请日：2002-02-05
申请人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
发明人： Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L27/1296 , H01L29/66757 , H01L29/78621 , Y10S257/913
摘要： The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for manufacturing the same. The invention forms a region or layer containing an inactive element, or rear gas element, in the channel region. As shown in FIG. 1, a rear gas element is contained at least in an upper layer of the channel region.
摘要翻译： TFT电气特性准备好受到半导体和栅极绝缘膜之间的界面附近的沟道区的影响。本发明提供了减少电特性偏差的TFT及其制造方法。本发明在通道区域中形成含有非活性元件或后气体元件的区域或层。如图所示。如图1所示，后气体元件至少包含在通道区域的上层中。

35. 发明申请

US20060163710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060163710A1
公开(公告)日：2006-07-27
申请号：US11374037
申请日：2006-03-14
申请人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno , Shunpei Yamazaki
IPC分类号： H01L21/50 , H01L23/02
CPC分类号： H01L25/50 , H01L21/2007 , H01L21/76251 , H01L23/3128 , H01L24/16 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83001 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06558 , H01L2225/06568 , H01L2924/00014 , H01L2924/01004 , H01L2924/01029 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/04941 , H01L2924/09701 , H01L2924/10253 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/00012 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2224/45099
摘要： A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

36. 发明申请

US20050005848A1 Apparatus for forming a film and an electroluminescence device 有权
标题翻译：用于形成膜和电致发光器件的装置
公开(公告)号：US20050005848A1
公开(公告)日：2005-01-13
申请号：US10826920
申请日：2004-04-19
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H05B33/10 , C23C14/00 , C23C14/12 , C23C14/24 , C23C16/00 , H01L51/00 , H01L51/40 , H01L51/50 , H01L51/56 , H05B33/04 , H05B33/14
CPC分类号： H05B33/10 , C23C14/12 , C23C14/24 , H01L51/001 , H01L51/5246 , H01L51/56 , H01L2251/5323
摘要： A device having three evaporation sources and a unit for moving the respective evaporation sources in one chamber is used, whereby it becomes possible to increase efficiency of use of an evaporation material. Consequently, manufacturing cost can be reduced, and a uniform thickness can be obtained over an entire surface of a substrate even in the case in which a large area substrate is used.
摘要翻译：使用具有三个蒸发源的装置和用于在一个室中移动各个蒸发源的单元，从而可以提高蒸发材料的使用效率。因此，即使在使用大面积基板的情况下，也可以在基板的整个表面上获得均匀的厚度。

37. 发明授权

US06709901B1 Semiconductor device having stick drivers and a method of manufacturing the same 有权
标题翻译：具有棒驱动器的半导体器件及其制造方法
公开(公告)号：US06709901B1
公开(公告)日：2004-03-23
申请号：US09566723
申请日：2000-05-09
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
IPC分类号： H01L2100
CPC分类号： H01L29/786 , G02F1/13452 , H01L27/1237 , H01L27/124 , H01L27/1255 , H01L27/1288 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675 , H01L29/78678 , H01L2029/7863
摘要： A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
摘要翻译：形成在像素区域中的像素TFT通过沟道蚀刻型反交错型TFT形成在第一衬底上，并且源极区域和漏极区域的图案化，并且通过相同的光掩模进行像素电极的图案化。通过使用具有晶体半导体层的TFT和依赖于驱动电路的输入输出端子形成的驱动电路被作为一个单元。在第三基板上形成多个单元，之后将第三基板分割成单独的单元，并将所获得的棒驱动器安装在第一基板上。

38. 发明授权

US09057924B2 Liquid crystal display device 有权
公开(公告)号：US09057924B2
公开(公告)日：2015-06-16
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

39. 发明授权

US09054206B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09054206B2
公开(公告)日：2015-06-09
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/67 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

40. 发明授权

US08921858B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08921858B2
公开(公告)日：2014-12-30
申请号：US12213733
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765
摘要： In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译：在具有反交错薄膜晶体管的发光器件中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源极和漏极区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

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