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31. 发明申请

US20100203299A1 Hardmask Process for Forming a Reverse Tone Image Using Polysilazane 有权
标题翻译：使用聚硅氮烷形成反向色调图像的硬掩模工艺
公开(公告)号：US20100203299A1
公开(公告)日：2010-08-12
申请号：US12368720
申请日：2009-02-10
申请人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
发明人： David Abdallah , Ralph R. Dammel , Yusuke Takano , Jin Li , Kazunori Kurosawa
IPC分类号： B32B3/10 , G03F7/20
CPC分类号： G03F7/40 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/0234 , H01L21/0337 , H01L21/31138 , H01L21/3125 , Y10T428/24802
摘要： The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
摘要翻译：本发明涉及一种在装置上形成反向色调图像的方法，包括： a）在衬底上形成任选的吸收有机底层; b）在底层上形成光致抗蚀剂的涂层; c）形成光致抗蚀剂图案; d）从聚硅氮烷涂料组合物在光致抗蚀剂图案上形成聚硅氮烷涂层，其中聚硅氮烷涂层比光致抗蚀剂图案厚，此外聚硅氮烷涂层组合物包含硅/氮聚合物和有机涂层溶剂; e）蚀刻聚硅氮烷涂层以除去聚硅氮烷涂层至少高达光致抗蚀剂顶部的水平，使得光刻胶图案显露出来; 以及f）干蚀刻以除去光致抗蚀剂下面的光致抗蚀剂和底层，从而在存在光致抗蚀剂图案的下方形成开口。本发明还涉及上述方法的产品和使用上述方法制造的微电子器件。

32. 发明申请

US20090253080A1 Photoresist Image-Forming Process Using Double Patterning 审中-公开
标题翻译：使用双重图案的光刻胶图像形成过程
公开(公告)号：US20090253080A1
公开(公告)日：2009-10-08
申请号：US12061061
申请日：2008-04-02
申请人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
发明人： Ralph R. Dammel , David Abdallah , Eric Alemy , Munirathna Padmanaban
IPC分类号： G03F7/30
CPC分类号： G03F7/0035 , G03F7/40
摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) imagewise exposing the second photoresist; and, g) developing the imagewise exposed second photoresist to form a second photoresist pattern between the first photoresist pattern, thereby providing a double photoresist pattern.
摘要翻译：一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）成像曝光第二光致抗蚀剂; 以及g）显影所述成像曝光的第二光致抗蚀剂以在所述第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案，从而提供双光致抗蚀剂图案。

33. 发明申请

US20090042133A1 Antireflective Coating Composition 审中-公开
标题翻译：防反射涂料组合物
公开(公告)号：US20090042133A1
公开(公告)日：2009-02-12
申请号：US11836980
申请日：2007-08-10
申请人： Zhong Xiang , Jianhui Shan , Jian Yin , David Abdallah
发明人： Zhong Xiang , Jianhui Shan , Jian Yin , David Abdallah
IPC分类号： G03C1/04 , C08F283/04 , G03C5/29
CPC分类号： C08G12/12 , C08G12/32 , C08L61/32 , G03F7/091
摘要： An antireflective coating composition which forms films with high n values is described.
摘要翻译：描述了形成具有高n值的膜的抗反射涂层组合物。

34. 发明申请

US20050093834A1 Man-machine interface for controlling access to electronic devices 失效
标题翻译：用于控制电子设备接入的人机界面
公开(公告)号：US20050093834A1
公开(公告)日：2005-05-05
申请号：US10997291
申请日：2004-11-24
申请人： David Abdallah , Barry Johnson , Kristen Olvera
发明人： David Abdallah , Barry Johnson , Kristen Olvera
IPC分类号： G07C9/00 , G09G5/00
CPC分类号： H04L63/0823 , G06F17/3028 , G06F21/10 , G06F21/31 , G06F21/32 , G06F21/6209 , G06F21/72 , G06F21/75 , G06F21/85 , G06F2221/0771 , G06K9/00013 , G06K9/00087 , G06K9/6201 , H04L9/3231 , H04L63/06 , H04L63/0861 , H04L63/102 , H04N21/25875 , H04N21/4415
摘要： The invention disclosed herein describes a man-machine interface device for controlling access to electronic devices. The man-machine interface device comprises an electronic display unit including a transparent finger touch sensor region that is seated above the display apparatus, which is responsible for determining the presence and absence of a finger and for generating fingerprint images when a finger is detected. The man-machine interface device also includes a controller unit that is coupled to the display apparatus, the finger touch sensor region, and at least one electronic device. The method of the invention describes a process for authenticating individuals and verifying their security privileges to access sensitive data, based on a finger-touch selection of an icon presented on the display apparatus of the man-machine interface device.
摘要翻译：本文公开的本发明描述了用于控制对电子设备的访问的人机接口设备。人机界面装置包括电子显示单元，其包括位于显示装置上方的透明手指触摸传感器区域，该区域负责确定手指的存在和不存在以及当检测到手指时产生指纹图像。人机界面装置还包括耦合到显示装置，手指触摸传感器区域和至少一个电子装置的控制器单元。本发明的方法基于人机界面设备的显示装置上呈现的图标的手指触摸选择来描述用于认证个人并验证其访问敏感数据的安全特权的过程。

35. 发明申请

US20090274974A1 SPIN-ON GRADED K SILICON ANTIREFLECTIVE COATING 审中-公开
标题翻译：旋转分级K硅抗反射涂层
公开(公告)号：US20090274974A1
公开(公告)日：2009-11-05
申请号：US12112221
申请日：2008-04-30
申请人： David Abdallah , Ralph R. Dammel
发明人： David Abdallah , Ralph R. Dammel
IPC分类号： G03F7/004 , B05D5/06 , G03F9/00
CPC分类号： G03F7/0752 , G03F7/091
摘要： Graded absorption silicon based antireflective coating compositions are described.
摘要翻译：描述了分级吸收硅基抗反射涂料组合物。

36. 发明申请

US20090253081A1 Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step 审中-公开
标题翻译：在包含图案硬化步骤的光刻胶图案之间缩小尺寸的过程
公开(公告)号：US20090253081A1
公开(公告)日：2009-10-08
申请号：US12061111
申请日：2008-04-02
申请人： David Abdallah , Ralph R. Dammel , Victor Monreal
发明人： David Abdallah , Ralph R. Dammel , Victor Monreal
IPC分类号： G03F7/40
CPC分类号： G03F7/0035 , G03F7/40
摘要： A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.
摘要翻译：一种在器件上形成光致抗蚀剂图案的工艺，包括： a）从第一光致抗蚀剂组合物在衬底上形成第一光致抗蚀剂层; b）成像曝光第一光致抗蚀剂; c）显影第一光致抗蚀剂以形成第一光致抗蚀剂图案; d）用包含至少2个氨基（NH 2）基团的硬化化合物处理第一光致抗蚀剂图案，从而形成硬化的第一光致抗蚀剂图案; e）在包含来自第二光致抗蚀剂组合物的硬化的第一光致抗蚀剂图案的衬底的区域上形成第二光致抗蚀剂层; f）暴露第二光致抗蚀剂; 并且g）显影暴露于第二光致抗蚀剂以形成具有增加的尺寸和减小的空间的光致抗蚀剂图案。

37. 发明申请

US20090061347A1 BASE SOLUBLE POLYMERS FOR PHOTORESIST COMPOSITIONS 有权
标题翻译：用于光电组合物的基础可溶性聚合物
公开(公告)号：US20090061347A1
公开(公告)日：2009-03-05
申请号：US12263511
申请日：2008-11-03
申请人： David Abdallah , Francis Houlihan
发明人： David Abdallah , Francis Houlihan
IPC分类号： G03G13/10 , C08G75/00 , C08G63/68
CPC分类号： G03F7/091 , C08G75/20 , C08G75/22 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Base soluble polymer comprising at least one sulfonyl group where at least one carbon atom at α-position and/or β-position and/or γ-position with respect to the sulfonyl group has a hydroxyl group, where the hydroxyl group is protected or unprotected are described.
摘要翻译：包含至少一个磺酰基的碱性可溶性聚合物，其中相对于磺酰基的α-位和/或β-位和/或γ位的至少一个碳原子具有羟基，其中羟基被保护或未被保护被描述。

38. 发明授权

US5754294A Optical micrometer for measuring thickness of transparent wafers 失效
标题翻译：用于测量透明晶片厚度的光学千分尺
公开(公告)号：US5754294A
公开(公告)日：1998-05-19
申请号：US643169
申请日：1996-05-03
申请人： Stephen H. Jones , Carolyn DeMain , Robert A. Ross , David Abdallah , Thomas Digges
发明人： Stephen H. Jones , Carolyn DeMain , Robert A. Ross , David Abdallah , Thomas Digges
IPC分类号： G01B11/06 , G01B9/02
CPC分类号： G01B11/06
摘要： Techniques and systems for measuring absolute thickness, the total thickness variation, and electric resistivity of a semiconductor wafer in a nondestructive optical fashion. Optical absorption is used to measure the absolute thickness of a semiconductor wafer with a light source and a phototransceiver. The thickness is determined by comparing the amount of absorption to a calibrated amount. Coherent light interference is used to measure the total thickness variation of a substrate. Alternatively, both the absolute thickness and total thickness variation of the substrate can be measured based on light absorption using a CCD imaging device. The resistivity of a wafer sample can also be measured by using an alternating electrical signal.
摘要翻译：以非破坏性的光学方式测量半导体晶片的绝对厚度，总厚度变化和电阻率的技术和系统。使用光吸收来测量具有光源和光收发器的半导体晶片的绝对厚度。通过将吸收量与校准量进行比较来确定厚度。相干光干涉用于测量基板的总厚度变化。或者，可以基于使用CCD成像装置的光吸收来测量基板的绝对厚度和总厚度变化。也可以通过使用交流电信号来测量晶片样品的电阻率。

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