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31. 发明授权

US07787281B2 Writing circuit for a phase change memory 有权
标题翻译：写相电路用于相变存储器
公开(公告)号：US07787281B2
公开(公告)日：2010-08-31
申请号：US11957044
申请日：2007-12-14
申请人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
发明人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
IPC分类号： G11C11/00
CPC分类号： G11C13/0061 , G11C11/5678 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092
摘要： A phase change memory writing circuit is provided. The circuit comprises a writing path and a fast write control unit. The writing path further comprises a current driving unit, a first switch device and a phase change memory cell. The current driving unit is coupled to a high voltage source and outputs a driving current. The first switch device is controlled by a first control signal. The fast write control unit is coupled to the writing path to provide a writing voltage to the writing path. When the first switch device is turned off, the fast write control unit outputs the writing voltage to the writing path. When the first switch device is turned on, the fast write control unit stops outputting the writing voltage to the writing path.
摘要翻译：提供了相变存储器写入电路。该电路包括写入路径和快速写入控制单元。写入路径还包括电流驱动单元，第一开关器件和相变存储器单元。电流驱动单元耦合到高电压源并输出驱动电流。第一开关装置由第一控制信号控制。快速写入控制单元耦合到写入路径以向写入路径提供写入电压。当第一开关装置关闭时，快速写入控制单元将写入电压输出到写入路径。当第一开关装置接通时，快速写入控制单元停止向写入路径输出写入电压。

32. 发明授权

US07768822B2 Compensation circuit and memory with the same 有权
标题翻译：补偿电路和内存相同
公开(公告)号：US07768822B2
公开(公告)日：2010-08-03
申请号：US12000981
申请日：2007-12-19
申请人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
发明人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
IPC分类号： G11C11/00
CPC分类号： G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： One embodiment of the invention provides a compensation circuit. The compensation circuit comprises a writing driver, a distance detection circuit, an operating element and an auxiliary writing driver. The writing driver provides a writing current to a writing path. The distance detection circuit is coupled to the writing path to detect a distance that the writing current has travelled and outputs a control signal based on the distance. The operating element is coupled to the writing path. The auxiliary writing driver provides an auxiliary current to the writing path based on the control signal.
摘要翻译：本发明的一个实施例提供一种补偿电路。补偿电路包括写入驱动器，距离检测电路，操作元件和辅助写入驱动器。写入驱动器向写入路径提供写入电流。距离检测电路耦合到写入路径以检测写入电流已经行进的距离，并且基于该距离输出控制信号。操作元件耦合到写入路径。辅助写入驱动器基于控制信号向写入路径提供辅助电流。

33. 发明授权

US07796454B2 Sensing circuit of a phase change memory and sensing method thereof 有权
标题翻译：相变存储器的感测电路及其感测方法
公开(公告)号：US07796454B2
公开(公告)日：2010-09-14
申请号：US11967175
申请日：2007-12-29
申请人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
发明人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
IPC分类号： G11C7/02
CPC分类号： G11C16/28 , G11C13/0004 , G11C13/004
摘要： A sensing circuit of a phase change memory. The sensing circuit comprises a storage capacitor and a reference capacitor, a storage memory device and a reference memory device, a storage discharge switch and a reference discharge switch, and an arbitrator. First terminals of the storage capacitor and the reference capacitor are respectively coupled to a pre-charge voltage via first switches. First terminals of the storage memory device and the reference memory device are respectively coupled to the first terminals of the storage capacitor and the reference capacitor. The storage discharge switch and the reference discharge switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The arbitrator is coupled to the first terminals of the storage memory device and the reference memory device and provides an output as a read result of the storage memory device.
摘要翻译：相变存储器的感测电路。感测电路包括存储电容器和参考电容器，存储存储器件和参考存储器件，存储放电开关和参考放电开关以及仲裁器。存储电容器和参考电容器的第一端子分别通过第一开关耦合到预充电电压。存储存储器件和参考存储器件的第一端子分别耦合到存储电容器和参考电容器的第一端子。存储放电开关和参考放电开关分别耦合到存储存储器件和参考存储器件的第二端子。仲裁器耦合到存储存储器件和参考存储器件的第一端子，并提供输出作为存储存储器件的读取结果。

34. 发明申请

US20080316803A1 SENSING CIRCUIT OF A PHASE CHANGE MEMORY AND SENSING METHOD THEREOF 有权
标题翻译：相变记忆传感电路及其感应方法
公开(公告)号：US20080316803A1
公开(公告)日：2008-12-25
申请号：US11968041
申请日：2007-12-31
申请人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
发明人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
IPC分类号： G11C7/12
CPC分类号： G11C7/08 , G11C7/12 , G11C13/0004 , G11C13/0026 , G11C13/004 , G11C2013/0054
摘要： A sensing circuit of a phase change memory. The sensing circuit comprises a data current source and a reference current source, a storage memory device and a reference memory device, a storage switch and a reference switch, an auxiliary current source and a comparator. First terminals of the storage memory device and the reference memory device are respectively coupled to the data current source and the reference current source. The storage switch and the reference switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The auxiliary current source is dynamically coupled to the first terminals of the storage memory device and the reference memory device. The comparator is coupled to the first terminals of the storage memory device and the reference memory device.
摘要翻译：相变存储器的感测电路。感测电路包括数据电流源和参考电流源，存储存储器件和参考存储器件，存储开关和参考开关，辅助电流源和比较器。存储存储器件和参考存储器件的第一端子分别耦合到数据电流源和参考电流源。存储开关和参考开关分别耦合到存储存储器件和参考存储器件的第二端子。辅助电流源动态地耦合到存储存储器件和参考存储器件的第一端子。比较器耦合到存储存储器件和参考存储器件的第一端子。

35. 发明申请

US20080170431A1 DRIVING METHOD AND SYSTEM FOR A PHASE CHANGE MEMORY 有权
标题翻译：相变记忆的驱动方法和系统
公开(公告)号：US20080170431A1
公开(公告)日：2008-07-17
申请号：US11944388
申请日：2007-11-21
申请人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang , Wen-Han Wang
发明人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang , Wen-Han Wang
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C16/349
摘要： An embodiment of a method for driving a phase change memory, comprising counting an access number of a phase change memory, wherein the access number is the number of times that the phase change memory has been accessed; refreshing the phase change memory when the number of times is large than a predetermined number.
摘要翻译：一种用于驱动相变存储器的方法的实施例，包括对相变存储器的访问次数进行计数，其中访问次数是所述相变存储器被访问的次数; 当次数大于预定数量时刷新相变存储器。

36. 发明授权

US07672176B2 Writing circuit for a phase change memory 失效
标题翻译：写相电路用于相变存储器
公开(公告)号：US07672176B2
公开(公告)日：2010-03-02
申请号：US11948486
申请日：2007-11-30
申请人： Pei-Chia Chiang , Shyh-Shyuan Sheu , Lieh-Chiu Lin
发明人： Pei-Chia Chiang , Shyh-Shyuan Sheu , Lieh-Chiu Lin
IPC分类号： G11C7/22
CPC分类号： G11C5/147 , G11C13/0004 , G11C13/0038 , G11C13/0069 , G11C2013/0078
摘要： A writing circuit for a phase change memory is provided. The writing circuit comprises a driving current generating circuit, a first switch device, a first memory cell and a second switch device. The driving current generating circuit provides a writing current to the first memory cell. The first switch device is coupled to the driving current generating circuit. The first memory cell is coupled between the first switch device and the second switch device. The second switch device is coupled between the first memory cell and a ground, wherein when the driving current generating circuit outputs the writing current to the first memory cell, the second switch device is turned on after the first switch device has been turned on for a first predetermined time period.
摘要翻译：提供了一种用于相变存储器的写入电路。写入电路包括驱动电流产生电路，第一开关器件，第一存储器单元和第二开关器件。驱动电流产生电路向第一存储单元提供写入电流。第一开关器件耦合到驱动电流产生电路。第一存储器单元耦合在第一开关器件和第二开关器件之间。第二开关装置耦合在第一存储单元和地之间，其中当驱动电流产生电路向第一存储单元输出写入电流时，第二开关器件在第一开关器件接通之后导通，第一预定时间段。

37. 发明授权

US07643373B2 Driving method and system for a phase change memory 有权
标题翻译：相变存储器的驱动方法和系统
公开(公告)号：US07643373B2
公开(公告)日：2010-01-05
申请号：US11944388
申请日：2007-11-21
申请人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang , Wen-Han Wang
发明人： Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang , Wen-Han Wang
IPC分类号： G11C8/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C16/349
摘要： An embodiment of a method for driving a phase change memory, comprising counting an access number of a phase change memory, wherein the access number is the number of times that the phase change memory has been accessed; refreshing the phase change memory when the number of times is large than a predetermined number.
摘要翻译：一种用于驱动相变存储器的方法的实施例，包括对相变存储器的访问次数进行计数，其中访问次数是所述相变存储器被访问的次数; 当次数大于预定数量时刷新相变存储器。

38. 发明申请

US20080316847A1 SENSING CIRCUIT OF A PHASE CHANGE MEMORY AND SENSING METHOD THEREOF 有权
标题翻译：相变记忆传感电路及其感应方法
公开(公告)号：US20080316847A1
公开(公告)日：2008-12-25
申请号：US11967175
申请日：2007-12-29
申请人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
发明人： Lieh-Chiu Lin , Shyh-Shyuan Sheu , Pei-Chia Chiang
IPC分类号： G11C7/02
CPC分类号： G11C16/28 , G11C13/0004 , G11C13/004
摘要： A sensing circuit of a phase change memory. The sensing circuit comprises a storage capacitor and a reference capacitor, a storage memory device and a reference memory device, a storage discharge switch and a reference discharge switch, and an arbitrator. First terminals of the storage capacitor and the reference capacitor are respectively coupled to a pre-charge voltage via first switches. First terminals of the storage memory device and the reference memory device are respectively coupled to the first terminals of the storage capacitor and the reference capacitor. The storage discharge switch and the reference discharge switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The arbitrator is coupled to the first terminals of the storage memory device and the reference memory device and provides an output as a read result of the storage memory device.
摘要翻译：相变存储器的感测电路。感测电路包括存储电容器和参考电容器，存储存储器件和参考存储器件，存储放电开关和参考放电开关以及仲裁器。存储电容器和参考电容器的第一端子分别通过第一开关耦合到预充电电压。存储存储器件和参考存储器件的第一端子分别耦合到存储电容器和参考电容器的第一端子。存储放电开关和参考放电开关分别耦合到存储存储器件和参考存储器件的第二端子。仲裁器耦合到存储存储器件和参考存储器件的第一端子，并提供输出作为存储存储器件的读取结果。

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