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31. 发明授权

US06639262B2 Metal oxide integrated circuit on silicon germanium substrate 失效
标题翻译：硅锗基板上的金属氧化物集成电路
公开(公告)号：US06639262B2
公开(公告)日：2003-10-28
申请号：US09906285
申请日：2001-07-16
申请人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
发明人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
IPC分类号： H01L31119
CPC分类号： H01L21/02197 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02282 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.
摘要翻译：集成电路电容器，其中电容器电介质是在硅锗衬底上方形成的具有小于200纳米的晶粒尺寸的BST薄膜。典型的晶粒尺寸为40nm以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前进行二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在600℃至850℃的温度下在氧气中进行炉退火。

32. 发明授权

US06537830B1 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material 失效
标题翻译：制造具有多晶结晶取向铁电材料的铁电FET的方法
公开(公告)号：US06537830B1
公开(公告)日：2003-03-25
申请号：US09533204
申请日：2000-03-23
申请人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
发明人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
IPC分类号： H01L2100
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：集成电路中的非破坏性读出非易失性铁电场效应晶体管（“FET”）存储器，其包含多晶结晶取向铁电材料的薄膜。优选地，材料是多晶c轴取向层状超晶格材料。更优选的是c轴取向的钽酸铋铋或铌酸铋钽铌酸盐。

33. 发明授权

US06495709B1 Liquid precursors for aluminum oxide and method making same 失效
标题翻译：氧化铝液体前体及其制备方法
公开(公告)号：US06495709B1
公开(公告)日：2002-12-17
申请号：US09526786
申请日：2000-03-16
申请人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
IPC分类号： C07F506
CPC分类号： C23C30/00 , C03C17/25 , C03C2217/214 , C03C2218/113 , C07C51/412 , C07C53/128
摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.
摘要翻译：用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。

34. 发明授权

US06358758B2 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06358758B2
公开(公告)日：2002-03-19
申请号：US09860386
申请日：2001-05-19
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

35. 发明授权

US06236076B1 Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material 失效
标题翻译：具有功能梯度材料的非易失性存储器应用的铁电场效应晶体管
公开(公告)号：US06236076B1
公开(公告)日：2001-05-22
申请号：US09301867
申请日：1999-04-29
申请人： Koji Arita , Carlos A. Paz de Araujo
发明人： Koji Arita , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L29/516 , H01L21/28291 , H01L28/56 , H01L29/78391
摘要： A nonvolatile nondestructible read-out ferroelectric FET memory comprising a semiconductor substrate, a ferroelectric functional gradient material (“FGM”) thin film, and a gate electrode. In one basic embodiment, the ferroelectric FGM thin film contains a ferroelectric compound and a dielectric compound. The dielectric compound has a lower dielectric constant than the ferroelectric compound. There is a concentration gradient of the ferroelectric compound in the thin film. In a second basic embodiment, the FGM thin film is a functional gradient ferroelectric (“FGF”), in which compositional gradients of ferroelectric compounds result in unconventional hysteresis behavior. The unconventional hysteresis behavior of FGF thin films is elated to an enlarged memory window in ferroelectric FET memories. FGM thin films are preferably formed using a liquid source MOD methods, preferably a multisource CVD method.
摘要翻译：包括半导体衬底，铁电功能梯度材料（“FGM”）薄膜和栅电极的非易失性非破坏性读出型铁电FET存储器。在一个基本实施例中，铁电FGM薄膜含有铁电化合物和电介质化合物。电介质化合物的介电常数比铁电化合物低。在薄膜中存在铁电化合物的浓度梯度。在第二基本实施例中，FGM薄膜是功能梯度铁电（“FGF”），其中铁电化合物的组成梯度导致非常规的滞后行为。 FGF薄膜的非常规滞后行为被激发到铁电FET存储器中的扩大的存储窗口。 FGM薄膜优选使用液体源MOD方法，优选多源CVD方法形成。

36. 发明授权

US06225656B1 Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same 有权
标题翻译：含有保护层的铁电集成电路和氧气的制造方法
公开(公告)号：US06225656B1
公开(公告)日：2001-05-01
申请号：US09204033
申请日：1998-12-01
申请人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
发明人： Joseph D. Cuchiaro , Akira Furuya , Carlos A. Paz de Araujo , Yoichi Miyasaka
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L2924/0002 , H01L2924/00
摘要： A protective layer in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material. In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier or a metallized wiring layer. The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent.
摘要翻译：铁电集成电路中的保护层含有少量的氧以保护铁电氧化物材料在制造过程中抵抗氢降解。通常，保护层是形成为覆盖铁电氧化物材料的薄膜的氢扩散阻挡层。在一种方法中，在沉积氢扩散阻挡层或金属化布线层期间，溅射气氛中包含少量的氧。氧形成抑制氢向铁电氧化物材料扩散的氧化物。氧形成浓度梯度，使得保护层内部的氧浓度为零，并且层表面附近的氧浓度为约2重量％。

37. 发明授权

US6151241A Ferroelectric memory with disturb protection 失效
标题翻译：铁电存储器具有干扰保护
公开(公告)号：US6151241A
公开(公告)日：2000-11-21
申请号：US314800
申请日：1999-05-19
申请人： Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
IPC分类号： G11C11/22 , H01L21/336 , H01L29/51 , G11C11/00
CPC分类号： H01L29/6684 , G11C11/22 , H01L29/516
摘要： A ferroelectric field effect transistor memory cell includes a thin film varistor located between the gate electrode and the ferroelectric layer. The varistor protects the ferroelectric layer from disturb voltage pulses arising from memory read, write and sense operations. A second electrode is located between the thin film varistor and the ferroelectric layer. The thin film ferroelectric is positioned over the channel of a transistor to operate as a ferroelectric gate. For voltages at which disturb voltages are likely to occur, the thin film varistor has a resistance obeying a formula R.sub.d >10.times.1/(2.pi.fC.sub.F), where R.sub.d is resistivity of the thin film varistor, f is an operating frequency of said memory, and C.sub.F is the capacitance of the ferroelectric layer. For voltages at or near the read and write voltage of the memory, the thin film varistor has a resistance obeying a formula R.sub.d
摘要翻译：铁电场效应晶体管存储单元包括位于栅电极和铁电层之间的薄膜变阻器。压敏电阻保护铁电层不受存储器读，写和读操作引起的干扰电压脉冲的影响。第二电极位于薄膜压敏电阻和铁电层之间。薄膜铁电体位于晶体管的沟道上方，用作铁电栅极。对于可能发生干扰电压的电压，薄膜压敏电阻具有遵循公式Rd> 10×1 /（2πfCF）的电阻，其中Rd是薄膜变阻器的电阻率，f是所述存储器的工作频率， CF是铁电层的电容。对于等于或接近存储器的读和写电压的电压，薄膜压敏电阻具有遵循公式Rd <0.1x1 /（2πfCF）的电阻。

38. 发明授权

US6080592A Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications 失效
标题翻译：制备用于铁电，高介电常数，集成电路应用的分层超晶格材料的方法
公开(公告)号：US6080592A
公开(公告)日：2000-06-27
申请号：US477331
申请日：1995-06-07
申请人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
发明人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00 , H01L21/8242
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译：集成电路包括具有式A1w1 + a1A2w2 + a2的分层超晶格材料。。。 Ajwj + ajS1x1 + s1S2x2 + s2。。。 Skxk + skB1y1 + b1B2y2 + b2。。。 Blyl + blQz-2，其中A1，A2。。。 Aj表示钙钛矿结构中的A位元素，S1，S2。。。 Sk代表超晶格发生器元件B1，B2。。。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为非零。这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。

39. 发明授权

US6056994A Liquid deposition methods of fabricating layered superlattice materials 失效
标题翻译：制备层状超晶格材料的液体沉积方法
公开(公告)号：US6056994A
公开(公告)日：2000-05-02
申请号：US477111
申请日：1995-06-07
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Michael C. Scott , Joseph D. Cuchiaro
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Michael C. Scott , Joseph D. Cuchiaro
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/14 , C23C26/02 , C23C4/123 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1878 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译：制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体，并沉积在基材上。在一个实施方案中，将衬底放置在真空沉积室内，使前体液体发生雾化，并将雾流入沉积室，同时将室保持在环境温度下，以将前体液体沉积在衬底上。在另一个实施方案中，将前体旋涂在基材上。将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。

40. 发明授权

US6022669A Method of fabricating an integrated circuit using self-patterned thin films 失效
标题翻译：使用自图案薄膜制造集成电路的方法
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译：将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。

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