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31. 发明授权

US06566632B1 Hot plate and semiconductor device manufacturing method using the same 有权
标题翻译：热板和半导体器件的制造方法采用这种方法
公开(公告)号：US06566632B1
公开(公告)日：2003-05-20
申请号：US09503723
申请日：2000-02-15
申请人： Tomio Katata , Nobuo Hayasaka , Katsuya Okumura
发明人： Tomio Katata , Nobuo Hayasaka , Katsuya Okumura
IPC分类号： H05B368
CPC分类号： H01L21/67248 , H01L21/67103 , H05B3/68
摘要： An electrostatic chuck type of hot plate is disclosed which permits the temperature of a semiconductor substrate to be measured with good repeatability. In addition to an electrostatic chuck electrode and a heating electrode as provided in conventional hot plates, the inventive hot plate is further provided with two or more temperature measuring probes.
摘要翻译：公开了一种静电吸盘式热板，其允许以良好的重复性测量半导体衬底的温度。除了常规热板中提供的静电吸盘电极和加热电极之外，本发明的热板还设置有两个或更多个温度测量探针。

32. 发明授权

US07829975B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US07829975B2
公开(公告)日：2010-11-09
申请号：US11980641
申请日：2007-10-31
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

33. 发明申请

US20080237888A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US20080237888A1
公开(公告)日：2008-10-02
申请号：US11980641
申请日：2007-10-31
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L23/52 , H01L21/00
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

34. 发明授权

US06746969B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06746969B2
公开(公告)日：2004-06-08
申请号：US09982003
申请日：2001-10-19
申请人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
发明人： Miyoko Shimada , Hideshi Miyajima , Rempei Nakata , Hideto Matsuyama , Katsuya Okumura , Masahiko Hasunuma , Nobuo Hayasaka
IPC分类号： H01L2131
CPC分类号： H01L21/02351 , H01L21/02126 , H01L21/02137 , H01L21/02312 , H01L21/02337 , H01L21/2636 , H01L21/3122 , H01L21/316 , H01L21/76825 , H01L21/76828 , H01L21/76834
摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.
摘要翻译：一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

35. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

36. 发明授权

US06239495B1 Multichip semiconductor device and memory card 失效
标题翻译：多芯片半导体器件和存储卡
公开(公告)号：US06239495B1
公开(公告)日：2001-05-29
申请号：US09363031
申请日：1999-07-29
申请人： Koji Sakui , Junichi Miyamoto , Nobuo Hayasaka , Katsuya Okumura
发明人： Koji Sakui , Junichi Miyamoto , Nobuo Hayasaka , Katsuya Okumura
IPC分类号： H01L2348
CPC分类号： G11C5/06 , G11C5/04 , G11C8/12 , H01L23/481 , H01L25/0657 , H01L2224/05567 , H01L2224/05573 , H01L2224/16145 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2224/05599
摘要： A multichip semiconductor device comprises a plurality of semiconductor chips, each including elements integrated in a semiconductor substrate. The semiconductor chips have substantially the same structure. Each semiconductor chip includes a connecting plug inserted in a through hole made through the semiconductor substrate. The semiconductor chips are stacked in layers. The connecting plugs of the semiconductor chips are selectively connected through metal bumps. Allocation of addresses of the semiconductor chips is designated by a connecting pattern of the bumps.
摘要翻译：多芯片半导体器件包括多个半导体芯片，每个半导体芯片包括集成在半导体衬底中的元件。半导体芯片具有基本上相同的结构。每个半导体芯片包括插入通过半导体衬底制成的通孔中的连接插头。半导体芯片层叠。通过金属凸块选择性地连接半导体芯片的连接插头。半导体芯片的地址分配由凸块的连接图案表示。

37. 发明授权

US09034467B2 Reticle chuck cleaner 有权
标题翻译：标线卡盘清洁剂
公开(公告)号：US09034467B2
公开(公告)日：2015-05-19
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
IPC分类号： B32B7/12 , B08B7/00 , G03F7/20
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译：根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂基质。

38. 发明申请

US20130313429A1 METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE 有权
公开(公告)号：US20130313429A1
公开(公告)日：2013-11-28
申请号：US13954425
申请日：2013-07-30
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , G01R31/307 , H01J37/04 , H01J2237/2441 , H01J2237/2446 , H01J2237/2594 , H01J2237/2817
摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

39. 发明授权

US08324726B2 Semiconductor device, electrode member and electrode member fabrication method 有权
标题翻译：半导体器件，电极部件和电极部件的制造方法
公开(公告)号：US08324726B2
公开(公告)日：2012-12-04
申请号：US11351338
申请日：2006-02-10
申请人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
发明人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
IPC分类号： H01L23/34
CPC分类号： H01L23/49811 , H01L23/49827 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/072 , H01L2224/37147 , H01L2224/40095 , H01L2224/40139 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/351 , H05K1/115 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
摘要翻译：一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。这样可以抑制裂纹的出现。结果，可以提高功率模块的耐热循环电阻和功率循环电阻。

40. 发明授权

US08247289B2 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08247289B2
公开(公告)日：2012-08-21
申请号：US11508141
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要翻译：提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

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