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31. 发明申请

US20080110868A1 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US20080110868A1
公开(公告)日：2008-05-15
申请号：US11979936
申请日：2007-11-09
申请人： Hiroshi Morikazu , Keiji Nomaru
发明人： Hiroshi Morikazu , Keiji Nomaru
IPC分类号： B23K26/38
CPC分类号： B23K26/0853 , B23K26/067 , B23K26/0673 , B23K26/082 , B23K2101/40
摘要： A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table and a processing-feed means, wherein the laser beam application means comprises a first pulse laser beam application means and a second pulse laser beam application means; the first pulse laser beam application means comprises an acousto-optic deflection means for deflecting the optical axis of a pulse laser beam oscillated by a first pulse laser beam oscillation means in the processing-feed direction (X direction), and a first condenser lens for converging a pulse laser beam passing through the acousto-optic deflection means; the second pulse laser beam application means comprises a second condenser lens for converging a pulse laser beam oscillated by the second pulse laser beam oscillation means; and an NA value of the first condenser lens is set smaller than the NA value of the second condenser lens.
摘要翻译：一种激光束处理机，包括：激光束施加装置，用于将激光束施加到夹持在卡盘台上的工件;以及加工进给装置，其中所述激光束施加装置包括第一脉冲激光束施加装置和第二脉冲激光器射束施加装置; 第一脉冲激光束施加装置包括用于使由第一脉冲激光束振荡装置在处理进给方向（X方向）上振荡的脉冲激光束的光轴偏转的声光偏转装置，以及用于会聚通过声光偏转装置的脉冲激光束; 第二脉冲激光束施加装置包括用于会聚由第二脉冲激光束振荡装置振荡的脉冲激光束的第二聚光透镜; 并且将第一聚光透镜的NA值设定为小于第二聚光透镜的NA值。

32. 发明申请

US20080045036A1 Via hole forming method 有权
标题翻译：通孔形成方法
公开(公告)号：US20080045036A1
公开(公告)日：2008-02-21
申请号：US11808719
申请日：2007-06-12
申请人： Hiroshi Morikazu
发明人： Hiroshi Morikazu
IPC分类号： H01L21/311
CPC分类号： H01L21/31105 , B23K26/382 , B23K26/40 , B23K2103/50 , H01L21/76898
摘要： A method of forming a via hole reaching a bonding pad in a wafer having an insulating film constituting a plurality of devices on the front surface of a substrate and bonding pads on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of:forming a non-through hole reaching the insulating film formed on the substrate by applying a pulse laser beam to the rear surface of the substrate;forming an insulating film on the inner wall of the hole which is formed in the substrate by the first step; andforming a via hole reaching a bonding pad by applying a pulse laser beam to the hole having the insulating film which is formed on the inner wall by the insulating film forming step.
摘要翻译：在基板表面上形成具有构成多个器件的绝缘膜的晶片中的通孔的通孔的形成方法，以及通过将脉冲激光束施加到基板的背面的接合焊盘基板，该方法包括以下步骤：通过向基板的后表面施加脉冲激光束，形成到达形成在基板上的绝缘膜的非通孔; 在通过第一步形成在基板中的孔的内壁上形成绝缘膜; 以及通过在绝缘膜形成步骤中形成在内壁上的具有绝缘膜的孔中施加脉冲激光束，形成到达接合焊盘的通孔。

33. 发明申请

US20080009132A1 Via hole forming method 审中-公开
标题翻译：通孔形成方法
公开(公告)号：US20080009132A1
公开(公告)日：2008-01-10
申请号：US11808385
申请日：2007-06-08
申请人： Hiroshi Morikazu
发明人： Hiroshi Morikazu
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices formed on the front surface of a substrate and bonding pads formed on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of: forming a non-through hole having a predetermined depth in the front surface of the substrate by applying a pulse laser beam having a spot diameter of 0.75 to 0.9 D when the diameter of the via hole to be formed is represented by D and an energy density per pulse of 40 to 60 J/cm2 to the rear surface of the substrate; and forming a via hole reaching a bonding pad in the substrate by applying a pulse laser beam having an energy density per pulse of 25 to 35 J/cm2 to the hole formed in the substrate.
摘要翻译：一种形成通孔的方法，该通孔通过向衬底的后表面施加脉冲激光束而形成在具有形成在衬底的前表面上的多个器件的晶片中的接合焊盘和形成在每个器件上的接合焊盘，该方法包括以下步骤：当要形成的通孔直径为0.75至0.9D的脉冲激光束时，在衬底的前表面形成具有预定深度的非通孔，由D表示，并且每个脉冲的能量密度为40至60J / cm 2至衬底的背面; 并且通过将每个脉冲的能量密度为25〜35J / cm 2的脉冲激光束施加到在基板上形成的孔，形成到达基板的接合焊盘的通孔。

34. 发明授权

US09174306B2 Laser processing method for nonlinear crystal substrate 有权
标题翻译：非线性晶体衬底的激光加工方法
公开(公告)号：US09174306B2
公开(公告)日：2015-11-03
申请号：US13413827
申请日：2012-03-07
申请人： Hiroshi Morikazu , Yoko Nishino
发明人： Hiroshi Morikazu , Yoko Nishino
IPC分类号： B23K26/00 , B23K26/06 , B23K26/40
CPC分类号： B23K26/064 , B23K26/0624 , B23K26/40 , B23K26/402 , B23K2101/40 , B23K2103/50
摘要： A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less.
摘要翻译：一种具有多个交叉分割线的非线性晶体基板的激光加工方法，其特征在于，包括：沿着分割线向所述非线性晶体基板的工作面施加脉冲激光束，从而在所述非线性晶体基板上形成多个激光加工槽工作面沿分界线。脉冲激光束的脉冲宽度设定为200ps以下，将脉冲激光束的重复频率设定为50kHz以下。

35. 发明授权

US08912464B2 Hole forming method and laser processing apparatus 有权
标题翻译：孔成型方法和激光加工装置
公开(公告)号：US08912464B2
公开(公告)日：2014-12-16
申请号：US13592974
申请日：2012-08-23
申请人： Hiroshi Morikazu
发明人： Hiroshi Morikazu
IPC分类号： B23K26/03 , B23K26/40 , B23K26/00 , B23K26/36 , B23K26/06 , B23K26/08 , B23K26/38 , H01L21/768
CPC分类号： B23K26/032 , B23K26/0006 , B23K26/0626 , B23K26/0853 , B23K26/361 , B23K26/382 , B23K26/40 , B23K2101/40 , B23K2103/16 , B23K2103/172 , B23K2103/50 , H01L21/76802
摘要： A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. A value is set representing the minimum number of shots of a pulsed laser beam when the spectral wavelength of plasma has changed from the spectral wavelength inherent in the first material to that of the second material. A maximum shot number is set representing a maximum value of the number of beam shots when the spectral wavelength of the plasma has completely changed. The beam is stopped if the number of shots has reached the minimum value and the spectral wavelength of the plasma has changed whereas the beam is continued until the number of shots reaches the maximum value if the spectral wavelength of the plasma has not changed even after the number of shots has reached the minimum value.
摘要翻译：在工件上形成激光加工孔。工件具有由与由第二材料形成的第二构件结合的第一材料形成的第一构件。当等离子体的光谱波长从第一材料中固有的光谱波长变为第二材料的光谱波长时，设置表示脉冲激光束的最小照射数的值。当等离子体的光谱波长完全改变时，设定最大拍摄数量，表示射束数量的最大值。如果拍摄次数达到最小值，并且等离子体的光谱波长已经改变，则光束停止，而如果等离子体的光谱波长甚至在拍摄张数达到最小值。

36. 发明授权

US08314014B2 Laser processing apparatus and laser processing method 有权
标题翻译：激光加工设备和激光加工方法
公开(公告)号：US08314014B2
公开(公告)日：2012-11-20
申请号：US12795887
申请日：2010-06-08
申请人： Hiroshi Morikazu
发明人： Hiroshi Morikazu
IPC分类号： H01L21/302
CPC分类号： B23K26/0853 , B23K26/0608 , B23K26/0613 , B23K26/0622 , B23K26/0676 , B23K26/073 , B23K26/082 , B23K26/364 , B23K26/40 , B23K2103/50 , H01L21/268
摘要： A laser processing apparatus including a laser beam applying unit. The laser beam applying unit includes a laser beam generating unit, a focusing unit, and an optical system for guiding a laser beam from the laser beam generating unit to the focusing unit. The optical system includes a first polarization beam splitter for splitting the laser beam generated from the laser beam generating unit into a first laser beam and a second laser beam, a half-wave plate inserted between the laser beam generating unit and the first polarization beam splitter, a first mirror for reflecting the first laser beam transmitted through the first polarization beam splitter to an optical path parallel to the optical path of the second laser beam, a second mirror for reflecting the second laser beam in a direction perpendicular to the direction of incidence of the second laser beam, and a second polarization beam splitter located at a position where the first laser beam reflected by the first mirror intersects the second laser beam reflected by the second mirror.
摘要翻译：一种激光加工装置，包括激光束施加单元。激光束施加单元包括激光束产生单元，聚焦单元和用于将来自激光束产生单元的激光束引导到聚焦单元的光学系统。光学系统包括：第一偏振分束器，用于将从激光束产生单元产生的激光束分成第一激光束和第二激光束;半波片，其插入在激光束发生单元和第一偏振分束器用于将通过第一偏振分束器传输的第一激光束反射到与第二激光束的光路平行的光路的第一反射镜，用于在垂直于入射方向的方向上反射第二激光束的第二反射镜以及位于第一反射镜反射的第一激光束与由第二反射镜反射的第二激光束相交的位置的第二偏振光束分离器。

37. 发明授权

US08178425B2 Optical device wafer processing method 有权
标题翻译：光器件晶圆加工方法
公开(公告)号：US08178425B2
公开(公告)日：2012-05-15
申请号：US13011266
申请日：2011-01-21
申请人： Tasuku Koyanagi , Hiroshi Morikazu
发明人： Tasuku Koyanagi , Hiroshi Morikazu
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/032 , B23K26/354 , B23K26/40 , B23K26/53 , B23K26/703 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B23K2103/56 , H01L33/0095
摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.
摘要翻译：一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。光学器件由形成在半导体层上的多个交叉分割线划分。光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

38. 发明申请

US20110195535A1 OPTICAL DEVICE WAFER PROCESSING METHOD 有权
标题翻译：光学器件波形处理方法
公开(公告)号：US20110195535A1
公开(公告)日：2011-08-11
申请号：US13011266
申请日：2011-01-21
申请人： Tasuku Koyanagi , Hiroshi Morikazu
发明人： Tasuku Koyanagi , Hiroshi Morikazu
IPC分类号： H01L21/304
CPC分类号： B23K26/0853 , B23K26/0006 , B23K26/032 , B23K26/354 , B23K26/40 , B23K26/53 , B23K26/703 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B23K2103/56 , H01L33/0095
摘要： An optical device wafer processing method for dividing an optical device wafer into a plurality of individual optical devices. The optical device wafer is composed of a substrate and a semiconductor layer formed on the front side of the substrate. The optical devices are partitioned by a plurality of crossing division lines formed on the semiconductor layer. The optical device wafer processing method includes a division start point forming step of applying a laser beam having a transmission wavelength to the substrate to the intersections of the crossing division lines in the condition where the focal point of the laser beam is set inside the substrate in an area corresponding to the intersections of the crossing division lines, thereby forming a plurality of modified dots as division start points inside the substrate at the intersections of the crossing division lines; and a crack growing step of applying a CO2 laser beam along the division lines to grow cracks inside the substrate from the division start points.
摘要翻译：一种用于将光学器件晶片分成多个单独的光学器件的光学器件晶片处理方法。光学器件晶片由衬底和形成在衬底的前侧上的半导体层组成。光学器件由形成在半导体层上的多个交叉分割线划分。光学元件晶片处理方法包括：分割开始点形成步骤，在激光束的焦点设置在基板的内部的状态下，将具有透射波长的激光束施加到基板的交叉分割线的交叉点与交叉分割线的交点相对应的区域，从而在交叉分割线的交点处在基板内形成多个修改点作为分割开始点; 以及沿分割线施加CO 2激光束以从分割开始点在基板内生长裂纹的裂纹扩展步骤。

39. 发明申请

US20100297855A1 DEVICE PROCESSING METHOD 有权
标题翻译：设备处理方法
公开(公告)号：US20100297855A1
公开(公告)日：2010-11-25
申请号：US12770290
申请日：2010-04-29
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/302
CPC分类号： H01L21/67092 , B23K26/032 , B23K26/0622 , B23K26/0648 , B23K26/073 , B23K26/082 , B23K26/0853 , B23K26/0876 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。

40. 发明申请

US20100297830A1 LASER PROCESSING METHOD FOR SEMICONDUCTOR WAFER 有权
标题翻译：用于半导体波长的激光加工方法
公开(公告)号：US20100297830A1
公开(公告)日：2010-11-25
申请号：US12771749
申请日：2010-04-30
申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
发明人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
IPC分类号： H01L21/268
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68327 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译：一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。

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