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31. 发明授权

US08188458B2 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US08188458B2
公开(公告)日：2012-05-29
申请号：US13099834
申请日：2011-05-03
申请人： Michael D. Craven , Stacia Keller , Steven P. DenBaars , Tal Margalith , James S. Speck , Shuji Nakamura , Umesh K. Mishra
发明人： Michael D. Craven , Stacia Keller , Steven P. DenBaars , Tal Margalith , James S. Speck , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L29/15
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。使用MOCVD在非平面（1120）蓝宝石衬底上生长非极性（11 20）a面GaN层。这些非极性（11 20）a面GaN层包括用于产生非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

32. 发明申请

US20120104360A1 STRAIN COMPENSATED SHORT-PERIOD SUPERLATTICES ON SEMIPOLAR OR NONPOLAR GAN FOR DEFECT REDUCTION AND STRESS ENGINEERING 审中-公开
标题翻译：用于缺陷减少和应力工程的二极管或非燃烧棒的应变补偿短周期监测
公开(公告)号：US20120104360A1
公开(公告)日：2012-05-03
申请号：US13284449
申请日：2011-10-28
申请人： Matthew T. Hardy , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Matthew T. Hardy , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/15 , H01L21/20
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3216 , H01S5/34333
摘要： An (AlInGaN) based semiconductor device, comprising a first layer that is a semipolar or nonpolar nitride (AlInGaN) layer having a lattice constant that is partially or fully relaxed, deposited on a substrate or a template, wherein there are one or more dislocations at a heterointerface between the first layer and the substrate or the template; one or more strain compensated layers on the first layer, for defect reduction and stress engineering in the device, that is lattice matched to a larger lattice constant of the first layer; and one or more nonpolar or semipolar (AlInGaN) device layers on the strain compensated layers.
摘要翻译：一种基于（AlInGaN）的半导体器件，其包括第一层，其是具有部分或完全弛豫的晶格常数的半极性或非极性氮化物（AlInGaN）层，沉积在衬底或模板上，其中存在一个或多个位错在第一层和衬底或模板之间的异质界面; 第一层上的一个或多个应变补偿层，用于器件中的缺陷减少和应力工程，其与第一层的较大晶格常数晶格匹配; 以及应变补偿层上的一个或多个非极性或半极性（AlInGaN）器件层。

33. 发明授权

US08166270B2 Storage control apparatus, data management system and data management method for determining storage heirarchy based on a user policy 有权
标题翻译：存储控制装置，数据管理系统和数据管理方法，用于根据用户策略确定存储层级
公开(公告)号：US08166270B2
公开(公告)日：2012-04-24
申请号：US13102281
申请日：2011-05-06
申请人： Akira Fujibayashi , Kazuhisa Fujimoto , Shuji Nakamura
发明人： Akira Fujibayashi , Kazuhisa Fujimoto , Shuji Nakamura
IPC分类号： G06F12/00
CPC分类号： G06F3/0631 , G06F3/0613 , G06F3/0616 , G06F3/0625 , G06F3/0649 , G06F3/067 , G06F3/0685 , Y02D10/154
摘要： A storage control apparatus according to the present invention includes a plurality of connecting units connected to one or more host computers and one or more hard disk drives as storage media for storing data, one or more non-volatile storage media which are of a different type from the hard disk drives and which store data WRITE requested from the host computer, a plurality of processing units for processing WRITE and READ requests from the host computer by using the hard disk drives or the non-volatile storage media and, a plurality of memory units for storing control information to be by the processing units.
摘要翻译：根据本发明的存储控制装置包括连接到一个或多个主计算机和一个或多个硬盘驱动器的多个连接单元作为用于存储数据的存储介质，一个或多个不同类型的非易失性存储介质从硬盘驱动器和从主计算机请求存储数据写入的多个处理单元，用于通过使用硬盘驱动器或非易失性存储介质来处理来自主计算机的写入和读取请求;以及多个存储器用于存储处理单元所要控制信息的单元。

34. 发明申请

US20120074525A1 MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE 有权
标题翻译： MISCUT SEMICOLAR OPTOELECTRONIC DEVICE
公开(公告)号：US20120074525A1
公开(公告)日：2012-03-29
申请号：US13311986
申请日：2011-12-06
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/20 , H01L33/16
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

35. 发明申请

US20120074429A1 GROWTH OF NON-POLAR M-PLANE III-NITRIDE FILM USING METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) 有权
标题翻译：使用金属化学气相沉积（MOCVD）的非极性M-平面III-氮化物膜的生长
公开(公告)号：US20120074429A1
公开(公告)日：2012-03-29
申请号：US13313335
申请日：2011-12-07
申请人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/16 , H01L21/20 , H01L29/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
摘要翻译：生长非极性m面III族氮化物膜的方法，例如GaN，AlN，AlGaN或InGaN，其中非极性m面III族氮化物膜在合适的衬底上生长，例如m-SiC ，m-GaN，LiGaO2或LiAlO2基板，使用金属有机化学气相沉积（MOCVD）。该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基底，在退火的基底上生长诸如氮化铝（AlN）的成核层，以及生长非极性m- 使用MOCVD在成核层上的III型氮化物膜。

36. 发明申请

US20120068184A1 DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS 审中-公开
标题翻译：非极性III型氮化物薄膜中的分离减少
公开(公告)号：US20120068184A1
公开(公告)日：2012-03-22
申请号：US13308362
申请日：2011-11-30
申请人： Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/0237 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/605 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
摘要翻译：非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。首先，将薄的图案化电介质掩模施加到种子层。其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

37. 发明授权

US08133322B2 Apparatus for inverted multi-wafer MOCVD fabrication 有权
标题翻译：倒装多晶圆MOCVD制造装置
公开(公告)号：US08133322B2
公开(公告)日：2012-03-13
申请号：US10256814
申请日：2002-09-27
申请人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
发明人： Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , C23C16/4584 , C30B25/10 , C30B25/14
摘要： A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.
摘要翻译：根据本发明的半导体制造反应器包括安装到反应器室的顶部的可旋转基座。将一个或多个晶片安装到基座的表面，并且基座的旋转导致晶片在腔室内旋转。加热器加热基座，腔室气体入口允许半导体生长气体进入反应器室以将半导体材料沉积在所述晶片上。包括室气体出口以允许生长气体离开室。在优选实施例中，入口处于或低于所述晶片的水平面，并且出口优选地处于或高于晶片的水平面。根据本发明的半导体制造系统包括用于在晶片上形成外延层的气体源和用于所述外延层中的掺杂剂的气体源。气体管线将掺杂剂和外延源气体输送到用于在晶片上生长半导体器件的反应器，并且气体管线中的源气体通过反应器入口注入反应器室。反应器包括安装在能够旋转的反应器室中的反转基座。一个或多个晶片被安装到基座的表面，基座的旋转导致晶片在腔室内旋转。加热器加热基座和源气体将半导体材料沉积在晶片上。

38. 发明申请

US20120056158A1 LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有P型表面的发光二极管粘合到透明基体上以提高光提取效率
公开(公告)号：US20120056158A1
公开(公告)日：2012-03-08
申请号：US13296611
申请日：2011-11-15
申请人： Kenji Iso , Hirokuni Asamizu , Makoto Saito , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
发明人： Kenji Iso , Hirokuni Asamizu , Makoto Saito , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
摘要翻译：一种（Al，Ga，In）N基发光二极管（LED），包括与透明底层材料结合的LED的p型表面，以增加p型表面的光提取，其中LED是无基底膜。

39. 发明授权

US08082389B2 Apparatus and method for mirroring data between nonvolatile memory and a hard disk drive 有权
标题翻译：用于在非易失性存储器和硬盘驱动器之间镜像数据的装置和方法
公开(公告)号：US08082389B2
公开(公告)日：2011-12-20
申请号：US12649804
申请日：2009-12-30
申请人： Akira Fujibayashi , Shuji Nakamura , Kazuhisa Fujimoto
发明人： Akira Fujibayashi , Shuji Nakamura , Kazuhisa Fujimoto
IPC分类号： G06F12/16
CPC分类号： G06F1/3225 , G06F1/3221 , G06F3/0625 , G06F3/0635 , G06F3/065 , G06F3/0685 , G06F11/2071 , Y02D10/154
摘要： This storage apparatus that provides to a host computer a logical device for storing data sent from the host computer includes a nonvolatile memory for storing the data, a disk-shaped memory device for storing the data, and a controller for controlling the nonvolatile memory and the disk-shaped memory device. The controller redundantly configures the logical device with the nonvolatile memory and the disk-shaped memory device.
摘要翻译：向主计算机提供用于存储从主计算机发送的数据的逻辑设备的存储装置包括用于存储数据的非易失性存储器，用于存储数据的盘形存储装置，以及用于控制非易失性存储器和盘形存储器件。控制器使用非易失性存储器和盘形存储器冗余配置逻辑设备。

40. 发明授权

US08053264B2 Photoelectrochemical etching of P-type semiconductor heterostructures 有权
标题翻译： P型半导体异质结构的光电化学蚀刻
公开(公告)号：US08053264B2
公开(公告)日：2011-11-08
申请号：US12464723
申请日：2009-05-12
申请人： Adele Tamboli , Evelyn Lynn Hu , Mathew C. Schmidt , Shuji Nakamura , Steven P. DenBaars
发明人： Adele Tamboli , Evelyn Lynn Hu , Mathew C. Schmidt , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L21/3213
CPC分类号： H01L21/30617 , H01L29/2003 , H01L33/0075
摘要： A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
摘要翻译：通过提供用于孔朝向待蚀刻的p型盖层的表面移动的驱动力，简单有效地对p型半导体层进行光电化学（PEC）蚀刻的方法，其中p型覆盖层为在异质结构上，异质结构从异质结构内部产生的内部偏压提供驱动力; 在异质结构的单独区域中产生电子 - 空穴对，而不是要蚀刻的表面; 并使用蚀刻剂溶液蚀刻p型层的表面。

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