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    • 33. 发明授权
    • Semiconductor integrated circuit for parallel signal processing
    • 半导体集成电路并行信号处理
    • US6127852A
    • 2000-10-03
    • US110014
    • 1998-07-02
    • Katsuhisa OgawaTadahiro OhmiTadashi Shibata
    • Katsuhisa OgawaTadahiro OhmiTadashi Shibata
    • G01D1/12G06G7/12G06G7/122H01L21/8238H01L27/092H01L29/78H03D1/00
    • G06G7/122
    • To retrieve analog signals at high precision by a maximum or minimum position detection parallel signal processing circuit, a plurality of circuit units in each of which a gate of a transistor is connected to a signal input terminal through first capacitive means, a common connecting point of the gate and the first capacitive means is connected to one terminal side of second capacitive means, and control means, for fluctuating a voltage on the other terminal side of the second capacitive means so as to further increase or decrease a drain current in correspondence to an increase or decrease in the drain current is connected between the drain and the other terminal side of the second capacitive means are provided, a source of each transistor of the plurality of circuit units is commonly connected and is connected to a constant current source, and the maximum or minimum voltage position detection with respect to a signal voltage which is applied to each signal input terminal is performed by a voltage on the other terminal side of the second capacitive means.
    • 为了通过最大或最小位置检测并行信号处理电路以高精度检索模拟信号,通过第一电容装置将晶体管的栅极连接到信号输入端的多个电路单元中的多个电路单元, 栅极和第一电容装置连接到第二电容装置的一个端子侧,以及控制装置,用于使第二电容装置的另一个端子侧的电压波动,以进一步增加或减少对应于 在第二电容装置的漏极和另一个端子侧之间连接漏极电流的增加或减少,多个电路单元中的每个晶体管的源极共同连接并连接到恒定电流源,并且 执行相对于施加到每个信号输入端子的信号电压的最大或最小电压位置检测 通过第二电容装置的另一个端子侧的电压。
    • 34. 发明授权
    • Drive circuit for semiconductor light-emitting device
    • 半导体发光装置的驱动电路
    • US5349595A
    • 1994-09-20
    • US23358
    • 1993-02-26
    • Katsuhisa OgawaTakamasa Sakuragi
    • Katsuhisa OgawaTakamasa Sakuragi
    • H01L33/00H01S5/042H03G1/00H05B33/08H01S3/00
    • H05B33/0818H01S5/042H05B33/0803H01S5/0427
    • A drive circuit for supplying a constant drive current to the anode terminal of a semiconductor light emitting device, includes a current supply source connected to the anode terminal for supplying a bias current to the semiconductor light emitting device. Since the drive circuit is formed so as to supply the bias current to the anode terminal of the semiconductor light emitting device, a charge current for charging a conjunction capacitance can be reduced independently on the time period of turning off the semiconductor light emitting device. As a result, a spike noise can be removed in the laser current waveform at its rise-up part, and a reduction of its rise-up speed can be restricted, both of which are due to a dependent upon the time period of turning off the semiconductor device.
    • 用于向半导体发光器件的阳极端子提供恒定驱动电流的驱动电路包括连接到阳极端子的电流源,用于向半导体发光器件提供偏置电流。 由于形成驱动电路以将偏置电流提供给半导体发光器件的阳极端子,因此可以在关闭半导体发光器件的时间段上独立地减小用于对连接电容充电的充电电流。 结果,可以在其上升部分处的激光电流波形中消除尖峰噪声,并且可以限制其上升速度的降低,这两者都是由于取决于关闭的时间段 半导体器件。
    • 35. 发明申请
    • IMAGE PROCESSING APPARATUS AND METHOD
    • 图像处理装置和方法
    • US20120212645A1
    • 2012-08-23
    • US13450564
    • 2012-04-19
    • Katsuhisa Ogawa
    • Katsuhisa Ogawa
    • H04N5/235
    • H04N5/243H04N5/23232H04N5/23245
    • An image processing apparatus determines a correction gain factor at a high rate of speed to synthesize an image. The apparatus includes a long second middle luminance image detecting unit for detecting a pixel having a pixel value in a first middle luminance pixel value region derived from a long second exposure image; a short second middle luminance image detecting unit for detecting a pixel having a pixel value in second middle luminance pixel value region derived from a shorter second exposure image; a correction gain factor calculating unit for designating, as a common pixel, the pixel detected by the long second middle luminance image detecting unit and the pixel detected by the short second middle luminance image detecting unit, each of the pixels at a common position, and for calculating a correction gain factor based on the pixel values of the common pixels.
    • 图像处理装置以高速率确定校正增益因子以合成图像。 该装置包括长的第二中间亮度图像检测单元,用于检测从长的第二曝光图像导出的第一中间亮度像素值区域中具有像素值的像素; 短的第二中间亮度图像检测单元,用于检测从较短的第二曝光图像导出的具有第二中间亮度像素值区域中的像素值的像素; 校正增益因子计算单元,用于指定由长第二中间亮度图像检测单元检测的像素和由第二中间亮度图像检测单元检测的像素作为公共像素,每个像素在公共位置,以及 用于基于公共像素的像素值来计算校正增益因子。
    • 40. 发明授权
    • Output buffer or voltage hold for analog of multilevel processing
    • 用于模拟或多级处理的输出缓冲器或电压保持
    • US6127857A
    • 2000-10-03
    • US110011
    • 1998-07-02
    • Katsuhisa OgawaTadahiro OhmiTadashi Shibata
    • Katsuhisa OgawaTadahiro OhmiTadashi Shibata
    • H01L27/092H03K19/003H03K19/00
    • H03K19/00315H01L27/092
    • In order to prevent an output offset voltage from occurring because of a relative difference of threshold voltage Vth between NMOS and PMOS in transmission of dc voltage, a semiconductor integrated circuit is constructed in a circuit configuration comprising a first depletion-mode N-channel MOS transistor and a first depletion-mode P-channel MOS transistor, a gate of each transistor being connected to an input terminal and a source of each transistor being connected to an output terminal, a second depletion-mode N-channel MOS transistor having W/L equal to that of the first depletion-mode P-channel MOS transistor, a drain of the transistor being connected to the output terminal and a gate and a source of the transistor being connected both to a lower-voltage-side power supply, and a second depletion-mode P-channel MOS transistor having W/L equal to that of the first depletion-mode P-channel MOS transistor, a drain of the transistor being connected to the output terminal and a gate and a source of the transistor being connected both to a higher-voltage-side power supply.
    • 为了防止由于在直流电压传输期间NMOS和PMOS之间的阈值电压Vth的相对差异而产生输出偏移电压,半导体集成电路被构造成包括第一耗尽型N沟道MOS晶体管 和第一耗尽型P沟道MOS晶体管,每个晶体管的栅极连接到输入端子,每个晶体管的源极连接到输出端子,具有W / L的第二耗尽型N沟道MOS晶体管 等于第一耗尽型P沟道MOS晶体管的漏极,晶体管的漏极连接到输出端子,并且晶体管的栅极和源极都连接到低压侧电源,以及 具有与第一耗尽型P沟道MOS晶体管相等的W / L的第二耗尽型P沟道MOS晶体管,晶体管的漏极连接到输出端子,栅极和 晶体管的源极连接到较高电压侧电源。