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    • 31. 发明授权
    • Fluorescent lamp and image display apparatus
    • 荧光灯和图像显示装置
    • US08803423B2
    • 2014-08-12
    • US13500312
    • 2010-02-23
    • Masakazu SagawaShin ImamuraToshiaki Kusunoki
    • Masakazu SagawaShin ImamuraToshiaki Kusunoki
    • H01J17/00
    • H01J17/00H01J11/22H01J11/34H01J11/50H01J17/04H01J17/066H01J17/20H01J17/49H01J61/16H01J65/04
    • To obtain effective luminance and light efficiency while avoiding discharge, it is necessary to sufficiently increase a current luminous efficiency of gas and an electron emission efficiency of an electron source. In a fluorescent lamp, an anode electric field is increased by setting a pressure of a noble gas or a molecular gas enclosed to 10 kPa or higher, setting an anode voltage to 240 V or lower, and setting a substrate distance to 0.4 mm or smaller. Furthermore, the resulting effect that the current luminous efficiency is increased in proportion to the electric field is used. Also, by applying a MIM electron source having an electron emission efficiency exceeding 10% as an electron source, a non-discharge fluorescent lamp having a light emission luminance equal to or larger than 104 [cd/m2] and a light emission efficiency equal to or larger than 120 [lm/W] is achieved.
    • 为了在避免放电的同时获得有效的亮度和光效率,必须充分提高气体的电流发光效率和电子源的电子发射效率。 在荧光灯中,通过将惰性气体或分子气体的压力设定为10kPa以上,将阳极电压设定为240V以下,将基板的距离设定为0.4mm以下,来增大阳极电场 。 此外,使用与电场成比例地增加当前发光效率的结果。 此外,通过应用电子发射效率超过10%的MIM电子源作为电子源,具有等于或大于104 [cd / m 2]的发光亮度和等于或等于的发光效率的非放电荧光灯 或大于120 [lm / W]。
    • 37. 发明申请
    • Image display device
    • 图像显示装置
    • US20060202207A1
    • 2006-09-14
    • US11326519
    • 2006-01-06
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • Masakazu SagawaToshiaki KusunokiKazutaka TsujiMutsumi Suzuki
    • H01L29/04
    • H01J31/127H01J29/04H01J29/481
    • The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life. On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).
    • 本发明提供一种图像显示装置,通过该图像显示装置,可以防止构成薄膜型电子源的底部电极和顶部电极(顶部电极总线)之间的电介质击穿,并且没有显示缺陷 并具有较长的使用寿命。 在阴极基板10上制备底部电极11,隧道绝缘体12和顶部电极13。 在顶部电极13的下层,形成顶部电极总线16,并且顶部电极13经由接触电极15可靠地连接到顶部电极母线16.场致电绝缘体12A,下层14 通过溅射沉积的层间绝缘体的a和层间绝缘体的上层14b层叠在顶部电极13和接触电极和底部电极11之间,并且底部电极11与顶部电极13(顶部电极 总线16)。
    • 40. 发明授权
    • Thin-film electron source and display produced by using the same
    • 薄膜电子源和使用它们的显示器
    • US06320324B1
    • 2001-11-20
    • US09646156
    • 2000-09-14
    • Toshiaki KusunokiMutsumi Suzuki
    • Toshiaki KusunokiMutsumi Suzuki
    • G09G310
    • B82Y10/00H01J1/312
    • This relates to a thin-film type electron source having a structure of a lower electrode 11, an insulating layer 12 and an upper electrode 13 being laminated in such order, for emitting electron from a surface of the upper electrode 13 into a vacuum, upon application of voltage between the lower electrode 11 and the upper electrode 13, in a polarity thereof so that the upper electrode 13 is positive in the voltage. In the above, as the insulating layer 12, being made from anodized film of Al-alloy lower electrode 11, is used one which has a ratio of a reverse direction diode current when applying an electric field of 10 MV/cm thereacross in a reverse direction, with respect to a forward direction diode current when applying an electric field of 10 MV/cm thereacross in a forward direction so as to cause emission of electron therefrom, being equal to or greater than 0.12, when it is converted into a case where height of barrier of the insulating layer 12 to the lower electrode 11 is equal to that of the upper electrode 13. Due to the above, improvement in symmetry is proceeded on the asymmetry of the current-voltage characteristic curve of the insulating layer 12, thereby elongating the life time of the thin-film type electron source.
    • 这涉及具有如下顺序层叠的下电极11,绝缘层12和上电极13的结构的薄膜型电子源,用于将电子从上电极13的表面发射到真空中 在下电极11和上电极13之间以极性施加电压,使得上电极13的电压为正。在上述中,作为绝缘层12,由Al合金的阳极氧化膜制成 使用电极11,当施加10MV / cm的电场时,相对于正向二极管电流,在相反方向上施加10MV / cm的电场时,反向二极管电流的比率 当将其转换为绝缘层12与下部电极11的阻挡层的高度相等的情况下,在正向方向上交叉以使其中的电子发射等于或大于0.12 由此,绝缘层12的电流 - 电压特性曲线的不对称性进一步提高了对称性,延长了薄膜型电子源的使用寿命。