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31. 发明申请

US20100102975A1 BATTERY LEAKAGE DETECTION SYSTEM 审中-公开
标题翻译：电池泄漏检测系统
公开(公告)号：US20100102975A1
公开(公告)日：2010-04-29
申请号：US12573645
申请日：2009-10-05
申请人： Tobias Vossmeyer , Yvonne Joseph , Akio Yasuda , Kenji Ogisu , Yoshio Nishi
发明人： Tobias Vossmeyer , Yvonne Joseph , Akio Yasuda , Kenji Ogisu , Yoshio Nishi
IPC分类号： G08B21/00
CPC分类号： H01M10/4207 , H01M10/4228
摘要： Battery leakage detection system comprising a gas sensor having a gas sensitive nanoparticle structure.
摘要翻译：电池泄漏检测系统包括具有气敏纳米颗粒结构的气体传感器。

32. 发明授权

US5556078A Manual hoist and traction machine 失效
标题翻译：手动葫芦牵引机
公开(公告)号：US5556078A
公开(公告)日：1996-09-17
申请号：US165705
申请日：1993-12-13
申请人： Haruo Kubota , Yoshio Nishi , Yoshio Ueno , Yasuo Wada , Munenobu Honda
发明人： Haruo Kubota , Yoshio Nishi , Yoshio Ueno , Yasuo Wada , Munenobu Honda
IPC分类号： B66D3/16 , B66D1/14 , B60T11/10 , B66D5/02 , F16D55/02
CPC分类号： B66D3/16
摘要： A manual hoist and traction machine wherein an outer diameter of a first lining plate constituting a mechanical brake is made smaller than an inner diameter of a driven disc of a handwheel. The outer diameter of a second lining plate and of a driven disc are made smaller than an inner diameter of a cylindrical portion of a braking ratchet wheel, and the first and second lining plates are formed of a lining raw material having improved performance with a compressive strength of 15 (Kgf/mm.sup.2) or more and a maximum strain of 12 (10.sup.-3 mm/mm) or more.
摘要翻译：一种手动葫芦和牵引机，其中构成机械制动器的第一衬板的外径小于手轮从动盘的内径。第二衬板和从动盘的外径小于制动棘轮的圆筒部的内径，第一和第二衬板由具有改进性能的衬里原料形成，压缩强度为15（Kgf / mm2）以上，最大应变为12（10-3mm / mm）以上。

33. 发明授权

US5472171A Free rotation control apparatus for a hoist and traction machine 失效
标题翻译：起重和牵引机的自由旋转控制装置
公开(公告)号：US5472171A
公开(公告)日：1995-12-05
申请号：US107153
申请日：1993-08-17
申请人： Yoshio Nishi , Haruo Kubota , Yasuo Wada , Yoshio Ueno , Munenobu Honda
发明人： Yoshio Nishi , Haruo Kubota , Yasuo Wada , Yoshio Ueno , Munenobu Honda
IPC分类号： B66D3/14 , B66D1/14 , F16D7/02
CPC分类号： B66D3/14
摘要： A hoist and traction machine having a mechanical brake (13), wherein a not-relative (14)-rotatable operating handle (18) is axially movably an interposed between a stopper (17) provided at an axial end of a driving shaft (5) and a driving member (8) threadedably engaged with the driving shaft (5). Between the operating handle (18) and the stopper (17) there is provided an elastic biasing member (19) for biasing the operating handle (18) toward the driving member (8) The operating handle (18) is provided with engaging projections (31), the driving member (8) is provided with free rotation control surfaces (35) in elastic contact with the engaging projections (31) respectively, and the free rotation control surfaces (35) are formed in gradient surfaces for applying resistance against movement of the driving member (8) in the return direction with respect to free rotation operation by the operating handle (18) so as to enable the free rotation control state to be held up to a desired value, whereby an input range of a pulling force of a chain during the free rotation control is expanded without reducing operability of free rotation operation.
摘要翻译：一种具有机械制动器（13）的提升和牵引机械，其中不可旋转的（14）可转动的操作手柄（18）可轴向移动，插入在设置在驱动轴（5）的轴向端部处的止动件）和与所述驱动轴（5）螺纹接合的驱动构件（8）。在操作手柄（18）和止动器（17）之间设置有用于将操作手柄（18）朝向驱动构件（8）偏置的弹性偏置构件（19）。操作手柄（18）设置有接合突起如图31所示，驱动构件（8）分别设置有与接合突起（31）弹性接触的自由旋转控制表面（35），并且自由旋转控制表面（35）形成在梯度表面中以施加抵抗运动相对于操作手柄（18）的自由旋转操作而沿着返回方向驱动驱动构件（8），以使得自由旋转控制状态能够保持到期望值，由此拉动力的输入范围在自由旋转控制期间链条被扩展而不降低自由旋转操作的可操作性。

34. 发明授权

US5398912A Hoist including brake cover and operating lever coupling 失效
标题翻译：起重机包括制动器盖和操作杆联轴器
公开(公告)号：US5398912A
公开(公告)日：1995-03-21
申请号：US989560
申请日：1992-12-11
申请人： Yoshio Nishi , Yasuo Wada , Haruo Kubota , Munenobu Honda , Yoshio Ueno
发明人： Yoshio Nishi , Yasuo Wada , Haruo Kubota , Munenobu Honda , Yoshio Ueno
IPC分类号： B66D3/04 , B66D3/10 , B66D3/14 , B66D1/04
CPC分类号： B66D3/14
摘要： A hoist and traction machine having a load sheave, a driving shaft and a driving member which is screw-threadedly engageable with the driving shaft. An operating handle 16 has an inner plate 16a and a brake cover 13a to cover a mechanical brake. The inner plate and the brake cover both have apertures of about the same size through which passes a portion of the driving member. A sleeve 102 which is separate from the brake cover and the operating lever is received in the apertures and held in place by a flange and a retaining ring so as to facilitate easy assembly.
摘要翻译：一种起重牵引机，其具有负载滑轮，驱动轴和与驱动轴螺纹接合的驱动构件。操作手柄16具有内板16a和用于覆盖机械制动器的制动器盖13a。内板和制动器盖都具有大致相同尺寸的孔，通过该孔通过驱动构件的一部分。与制动器盖和操作杆分离的套筒102容纳在孔中并通过凸缘和保持环保持在适当位置，以便于组装。

35. 外观设计

USD347508S Main body of lever-type winding machine 失效
公开(公告)号：USD347508S
公开(公告)日：1994-05-31
申请号：US9331
申请日：1993-06-10
申请人： Haruo Kubota , Yoshio Nishi
设计人： Haruo Kubota , Yoshio Nishi

36. 发明授权

US5061983A Semiconductor device having a metal silicide layer connecting two semiconductors 失效
标题翻译：具有连接两个半导体的金属硅化物层的半导体器件
公开(公告)号：US5061983A
公开(公告)日：1991-10-29
申请号：US318411
申请日：1989-02-28
申请人： Hideharu Egawa , Yoshio Nishi , Kenji Maeguchi
发明人： Hideharu Egawa , Yoshio Nishi , Kenji Maeguchi
IPC分类号： H01L21/768 , H01L21/28 , H01L23/532 , H01L27/12 , H01L29/43
CPC分类号： H01L23/53271 , H01L27/12 , H01L2924/0002
摘要： A method for manufacturing a semiconductor device that includes p- and n-type regions formed on an insulating substrate, and an interconnection layer electrically coupled with these p- and n-type regions. The interconnection layer is an n-type polycrystalline silicon layer which is electrically coupled with the p- and n-type regions through a metal silicide film formed between the interconnection layer and the p- and n-type regions.
摘要翻译：一种制造半导体器件的方法，该半导体器件包括形成在绝缘衬底上的p型和n型区域，以及与这些p型和n型区域电耦合的互连层。互连层是通过在互连层和p型区域和n型区域之间形成的金属硅化物膜与p型区域和n型区域电耦合的n型多晶硅层。

37. 发明授权

US4959281A Non aqueous electrolyte cell 失效
标题翻译：非水电解质电池
公开(公告)号：US4959281A
公开(公告)日：1990-09-25
申请号：US399982
申请日：1989-08-29
申请人： Yoshio Nishi , Hideto Azuma , Atsuo Omaru
发明人： Yoshio Nishi , Hideto Azuma , Atsuo Omaru
IPC分类号： C01B31/02 , H01M4/525 , H01M4/587 , H01M10/05 , H01M10/0525 , H01M4/38 , H01M10/40
CPC分类号： H01M10/0525 , H01M4/587 , H01M4/525
摘要： An improved non-aqueous electrolyte cell is disclosed in which specific carbonaceous material is used as an anode. The carbonaceous material has interlayer spacing d.sub.002 of not less than 3.70 A, true density not larger than 1.70 g/cm.sup.3 and no exothermic peak not less than 700.degree. C. upon differential thermal analysis under air stream. The combination with cathode active material containing Li in an amount not less than 250 mAH/g in term of charging/discharging capacity, provides superior cyclic life characterisitcs and large capacity.
摘要翻译：公开了一种改进的非水电解质电池，其中使用特定的碳质材料作为阳极。碳质材料具有不小于3.70A的层间距d002，真空密度不大于1.70g / cm 3，在空气流下进行差热分析时，不具有不低于700℃的放热峰。与充电/放电容量不小于250mAH / g的含有Li的阴极活性物质的组合提供优异的循环寿命特性和大容量。

38. 发明授权

US4812419A Via connection with thin resistivity layer 失效
标题翻译：通过连接薄电阻率层
公开(公告)号：US4812419A
公开(公告)日：1989-03-14
申请号：US45002
申请日：1987-04-30
申请人： Keunmyung Lee , Yoshio Nishi
发明人： Keunmyung Lee , Yoshio Nishi
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L11/00
CPC分类号： H01L23/5226 , H01L2924/0002
摘要： A via connection and method for making the same for integrated circuits having multiple layers of electrically conductive interconnect lines separated by an insulative layer. The via connection is characterized by a very thin layer of high resistivity material lining the via hole in conductive contact with interconnect lines in two layers. The resistivity of the thin layer material is in a range from about 10 to about 50 times the interconnect line resistivities and generally has a thickness of less than 100 nanometers. The thin layer assures more uniform current flow in the via connection thereby preventing electromigration, with reduced peak local current density by causing current to swing more widely around the corner at the interface between the interconnect lines at the via.

39. 发明授权

US4491856A Semiconductor device having contacting but electrically isolated semiconductor region and interconnection layer of differing conductivity types 失效
标题翻译：具有接触但电隔离的半导体区域和不同导电类型的互连层的半导体器件
公开(公告)号：US4491856A
公开(公告)日：1985-01-01
申请号：US582864
申请日：1984-02-27
申请人： Hideharu Egawa , Yoshio Nishi , Kenji Maeguchi
发明人： Hideharu Egawa , Yoshio Nishi , Kenji Maeguchi
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/522 , H01L23/532 , H01L27/12 , H01L23/48 , H01L27/02 , H01L29/78
CPC分类号： H01L27/12 , H01L23/522 , H01L23/53271 , H01L2924/0002
摘要： A semiconductor device includes p- and n-type semiconductor layers formed on an insulating substrate and an n-type interconnection layer formed to be electrically coupled with said n-type semiconductor layer. The n-type interconnection layer is formed in contact with the p-type semiconductor layer and is set at such a potential as to apply a reverse voltage across the p-n junction between the n-type interconnection layer and p-type semiconductor layer, so as to electrically isolate the n-type interconnection layer from the p-type semiconductor layer.
摘要翻译：半导体器件包括形成在绝缘基板上的p型和n型半导体层以及形成为与所述n型半导体层电耦合的n型互连层。 n型互连层形成为与p型半导体层接触，并且被设置为在n型互连层和p型半导体层之间的pn结上施加反向电压的电位，从而以将n型互连层与p型半导体层电隔离。

40. 发明授权

US4459606A Integrated injection logic semiconductor devices 失效
标题翻译：集成注入逻辑半导体器件
公开(公告)号：US4459606A
公开(公告)日：1984-07-10
申请号：US644296
申请日：1975-12-24
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L27/082 , H01L21/331 , H01L21/8226 , H01L27/02 , H01L29/73 , H01L27/04 , H03K19/091
CPC分类号： H01L27/0214
摘要： The integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on the N type semiconductor substrate, a first N type region extending through the P type semiconductor layer to reach the N type semiconductor substrate, a P type region formed in the first N type region and having a periphery along the outer periphery of the first N type region and a second N type region formed in the P type semiconductor layer. The integrated injection logic semiconductor device is constituted by a PNP lateral transistor utilizing the P type region, the first N type region and the P type semiconductor layer as the emitter, base and collector electrodes respectively, and a NPN vertical transistor utilizing the N type semiconductor substrate, P type semiconductor layer and the second N type region as the emitter, base and collector electrodes, respectively.
摘要翻译：集成注入逻辑半导体器件包括N型半导体衬底，层叠在N型半导体衬底上的P型半导体层，延伸穿过P型半导体层到达N型半导体衬底的第一N型区域，P型区域形成在第一N型区域中，并且沿着第一N型区域的外周具有周边，以及形成在P型半导体层中的第二N型区域。集成注入逻辑半导体器件分别由利用P型区域，第一N型区域和P型半导体层作为发射极，基极和集电极的PNP横向晶体管构成，以及利用N型半导体的NPN垂直晶体管基板，P型半导体层和第二N型区域分别作为发射极，基极和集电极。

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