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31. 发明授权

US5086016A Method of making semiconductor device contact including transition metal-compound dopant source 失效
标题翻译：制造包括过渡金属化合物掺杂剂源的半导体器件接触的方法
公开(公告)号：US5086016A
公开(公告)日：1992-02-04
申请号：US606632
申请日：1990-10-31
申请人： Stephen B. Brodsky , Rajiv V. Joshi , John S. Lechaton , James G. Ryan , Dominic J. Schepis
发明人： Stephen B. Brodsky , Rajiv V. Joshi , John S. Lechaton , James G. Ryan , Dominic J. Schepis
IPC分类号： H01L21/225 , H01L21/28 , H01L21/285 , H01L21/331 , H01L21/60
CPC分类号： H01L21/76897 , H01L21/2254 , H01L21/28568 , H01L29/66272 , Y10S148/034 , Y10S148/035
摘要： A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer of a transition metal-boride compound over a selected region on the substrate. A layer of a transition metal-nitride compound is formed over the layer of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. The transition metal-boride/transition metal nitride layers are patterned to leave a contact to the doped region.

32. 发明授权

US4464701A Process for making high dielectric constant nitride based materials and devices using the same 失效
标题翻译：制造高介电常数氮化物基材料的方法及使用其的装置
公开(公告)号：US4464701A
公开(公告)日：1984-08-07
申请号：US527454
申请日：1983-08-29
申请人： Stanley Roberts , James G. Ryan
发明人： Stanley Roberts , James G. Ryan
IPC分类号： H01L27/04 , H01G4/10 , H01G4/20 , H01L21/318 , H01L21/822 , H01G4/06
CPC分类号： H01G4/20
摘要： An improved method of fabricating a stable high dielectric constant and low leakage dielectric material which includes oxidizing at a temperature of about 600.degree. C. or higher a layer of a mixture of a transition metal nitride and silicon nitride to produce a mixture which includes an oxide of the transition metal and silicon nitride. The initial mixture of transition metal nitride and silicon nitride may be deposited by reactive sputtering techniques or other known deposition techniques on, a semiconductor or an electrically conductive layer, and the thickness of the mixture should be within the range of 3 to 50 nanometers. By depositing an electrically conductive layer on the oxidized mixture, a capacitor having a high dielectric, and low current leakage dielectric medium is provided.
摘要翻译：一种制造稳定的高介电常数和低泄漏介电材料的改进方法，其包括在约600℃或更高的温度下氧化过渡金属氮化物和氮化硅的混合物的层，以产生包括氧化物的过渡金属和氮化硅。过渡金属氮化物和氮化硅的初始混合物可以通过反应溅射技术或其它已知的沉积技术沉积在半导体或导电层上，并且混合物的厚度应在3至50纳米的范围内。通过在氧化的混合物上沉积导电层，提供具有高电介质和低电流泄漏电介质的电容器。

33. 发明申请

US20100119422A1 CHEMICAL AND PARTICULATE FILTERS CONTAINING CHEMICALLY MODIFIED CARBON NANOTUBE STRUCTURES 失效
标题翻译：包含化学改性碳纳米管结构的化学和颗粒过滤器
公开(公告)号：US20100119422A1
公开(公告)日：2010-05-13
申请号：US12652908
申请日：2010-01-06
申请人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
发明人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
IPC分类号： B01J15/00 , B01J19/00
CPC分类号： B01D53/02 , B01D2253/102 , B01D2253/304 , B01J20/20 , B01J20/205 , B01J20/3242 , B82Y30/00 , Y10S55/05 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/75 , Y10S977/752
摘要： A carbon nanotube filter. The filter including a filter housing; and chemically active carbon nanotubes within the filter housing, the chemically active carbon nanotubes comprising a chemically active layer formed on carbon nanotubes or comprising chemically reactive groups on sidewalls of the carbon nanotubes; and media containing the chemically active carbon nanotubes.
摘要翻译：碳纳米管过滤器。过滤器包括过滤器壳体; 和化学活性碳纳米管，所述化学活性碳纳米管包括在碳纳米管上形成的化学活性层或在碳纳米管的侧壁上包含化学反应性基团; 和含有化学活性碳纳米管的介质。

34. 发明授权

US07708816B2 Chemical and particulate filters containing chemically modified carbon nanotube structures 有权
标题翻译：包含化学改性碳纳米管结构的化学和微粒过滤器
公开(公告)号：US07708816B2
公开(公告)日：2010-05-04
申请号：US12168171
申请日：2008-07-07
申请人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
发明人： Steven J. Holmes , Mark C. Hakey , David V. Horak , James G. Ryan
IPC分类号： B01D59/26
CPC分类号： B01D53/02 , B01D2253/102 , B01D2253/304 , B01J20/20 , B01J20/205 , B01J20/3242 , B82Y30/00 , Y10S55/05 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/75 , Y10S977/752
摘要： A carbon nanotube filter. The filter including a filter housing; and chemically active carbon nanotubes within the filter housing, the chemically active carbon nanotubes comprising a chemically active layer formed on carbon nanotubes or comprising chemically reactive groups on sidewalls of the carbon nanotubes; and media containing the chemically active carbon nanotubes.
摘要翻译：碳纳米管过滤器。过滤器包括过滤器壳体; 和化学活性碳纳米管，所述化学活性碳纳米管包括在碳纳米管上形成的化学活性层或在碳纳米管的侧壁上包含化学反应性基团; 和含有化学活性碳纳米管的介质。

35. 发明授权

US07424122B2 Hearing instrument vent 有权
标题翻译：听力仪器通风口
公开(公告)号：US07424122B2
公开(公告)日：2008-09-09
申请号：US10818258
申请日：2004-04-05
申请人： James G. Ryan
发明人： James G. Ryan
IPC分类号： H04R25/00
CPC分类号： H04R25/456 , H04R25/48 , H04R2460/11
摘要： A vent configuration for a hearing instrument comprises a vent tube having a length and a vent opening, and at least one cell positioned around the periphery of the vent tube. The at least one cell is closed at a first inner end and open at an outer end, which is adjacent the vent opening. The cell is a tube that extends around the periphery of the vent tube along a portion of the length of the vent tube. A hearing instrument incorporating the vent configuration is also included.
摘要翻译：用于听力仪器的排气构造包括具有长度和通气口的通气管，以及围绕排气管周边设置的至少一个室。至少一个电池在第一内端处封闭，并且在与排气口相邻的外端开口。电池是沿通气管的长度的一部分围绕通气管的周边延伸的管。还包括结合排气口配置的助听器。

36. 发明授权

US07366310B2 Microphone array diffracting structure 失效
$Microphone array diffracting structure$
标题翻译：麦克风阵列衍射结构
公开(公告)号：US07366310B2
公开(公告)日：2008-04-29
申请号：US11421934
申请日：2006-06-02
申请人： Michael R. Stinson , James G. Ryan
发明人： Michael R. Stinson , James G. Ryan
IPC分类号： H04R3/00 , H04R1/02 , H04R25/00 , H04R9/08
CPC分类号： H04R1/406 , H04R25/405 , H04R25/407 , H04R2430/20
摘要： The present invention increases the aperture size of a microphone array by introducing a diffracting structure into the interior of a microphone array. The diffracting structure within the array modifies both the amplitude and phase of the acoustic signal reaching the microphones. The diffracting structure increases acoustic shadowing along with the signal's travel time around the structure. The diffracting structure in the array effectively increases the aperture size of the array and thereby increases the directivity of the array. Constructing the surface of the diffracting structure such that surface waves can form over the surface further increases the travel time and modifies the amplitude of the acoustical signal thereby allowing a larger effective aperture for the array.
摘要翻译：本发明通过将衍射结构引入麦克风阵列的内部来增加麦克风阵列的孔径尺寸。阵列内的衍射结构改变到达麦克风的声信号的振幅和相位。衍射结构随着信号围绕结构的行进时间增加了声阴影。阵列中的衍射结构有效地增加阵列的孔径尺寸，从而增加阵列的方向性。构造衍射结构的表面，使得表面波可以在表面上形成进一步增加行进时间并改变声信号的幅度，从而允许阵列的较大的有效孔径。

37. 发明授权

US07123735B2 Method and apparatus to increase acoustic separation 失效
公开(公告)号：US07123735B2
公开(公告)日：2006-10-17
申请号：US09949832
申请日：2001-09-12
申请人： James G. Ryan , Michael R. Stinson
发明人： James G. Ryan , Michael R. Stinson
IPC分类号： H04R1/20 , H04R1/02 , E04B1/82
CPC分类号： H04R1/02
摘要： A method and apparatus for reducing the acoustic coupling between a sound receiving transducer and a sound transmitting transducer is disclosed. A housing, wherein the receiving transducer and the transmitting transducer are mounted, is provided to increase the acoustic separation between the receiving transducer and the transmitting transducer. The housing has a surface, which may have an acoustic impedance condition, which is preferably resistive. The housing may further act as a barrier structure between the receiving transducer and the transmitting transducer.

38. 发明申请

US20050232452A1 Digital hearing aid system 有权
标题翻译：数字助听器系统
公开(公告)号：US20050232452A1
公开(公告)日：2005-10-20
申请号：US11150896
申请日：2005-06-13
申请人： Stephen W. Armstrong , Frederick E. Sykes , David R. Brown , James G. Ryan
发明人： Stephen W. Armstrong , Frederick E. Sykes , David R. Brown , James G. Ryan
IPC分类号： H04R25/00
CPC分类号： H04R25/407 , H04R25/356 , H04R25/453 , H04R25/505 , H04R2225/43 , H04R2460/05
摘要： A digital hearing aid is provided that includes front and rear microphones, a sound processor, and a speaker. Embodiments of the digital hearing aid include an occlusion subsystem, and a directional processor and headroom expander. The front microphone receives a front microphone acoustical signal and generates a front microphone analog signal. The rear microphone receives a rear microphone acoustical signal and generates a rear microphone analog signal. The front and rear microphone analog signals are converted into the digital domain, and at least the front microphone signal is coupled to the sound processor. The sound processor selectively modifies the signal characteristics and generates a processed signal. The processed signal is coupled to the speaker which converts the signal to an acoustical hearing aid output signal that is directed into the ear canal of the digital hearing aid user. The occlusion sub-system compensates for the amplification of the digital hearing aid user's own voice within the ear canal. The directional processor and headroom expander optimizes the gain applied to the acoustical signals received by the digital hearing aid and combine the amplified signals into a directionally-sensitive response.
摘要翻译：提供了一种数字助听器，包括前置和后置麦克风，声音处理器和扬声器。数字助听器的实施例包括遮挡子系统以及定向处理器和净空扩展器。前麦克风接收前麦克风声信号并产生前麦克风模拟信号。后麦克风接收后麦克风声音信号并产生后麦克风模拟信号。前和后麦克风模拟信号被转换成数字域，并且至少前麦克风信号耦合到声音处理器。声音处理器选择性地修改信号特性并产生处理的信号。经处理的信号耦合到扬声器，扬声器将该信号转换成被引导到数字助听器用户的耳道中的声学助听器输出信号。闭塞子系统补偿耳道内数字助听器用户自己的声音的放大。定向处理器和净空扩展器优化了应用于由数字助听器接收的声学信号的增益，并将放大的信号组合成方向敏感的响应。

39. 发明授权

US5593537A Apparatus for processing semiconductor wafers 失效
标题翻译：半导体晶圆处理装置
公开(公告)号：US5593537A
公开(公告)日：1997-01-14
申请号：US613944
申请日：1996-03-13
申请人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
发明人： William J. Cote , James G. Ryan , Katsuya Okumura , Hiroyuki Yano
IPC分类号： H01L21/304 , B24B37/04 , B24D13/14 , H01L21/00
CPC分类号： B24B37/26 , B24B37/04 , Y10S451/921
摘要： The invention is directed to a semi-conductor wafer processing machine including an arm having a wafer carrier disposed at one end. The wafer carrier is rotatable with the rotating motion imparted to a semi-conductor wafer held thereon. In first embodiment, the machine further includes a rotatable polishing pad having an upper surface divided into a plurality of wedge-shaped sections, including an abrasion section and a polishing section. The abrasion section has a relatively rough texture and the polishing section has a relatively fine texture as compared to each other. In an alternative embodiment, the pad includes an underlayer and surface layer. The surface layer includes two sections of differing hardness, both of which are harder than the underlayer. Alternatively, the surface layer may include one relatively hard section, and the underlayer may include two sections, one of which has the same hardness as the surface layer and the other of which is softer than the surface layer. In a further embodiment, the polishing pad has an annular shape, and a chemical processing table is disposed within the open central region of the pad.
摘要翻译：本发明涉及一种半导体晶片加工机械，其包括具有设置在其一端的晶片载体的臂。晶片载体可转动，转动运动被施加到保持在其上的半导体晶片。在第一实施例中，机器还包括可旋转的抛光垫，其具有被分成多个楔形部分的上表面，该楔形部分包括磨损部分和抛光部分。磨损部分具有相对粗糙的结构，并且抛光部分具有相对于彼此相对较细的结构。在替代实施例中，垫包括底层和表面层。表面层包括两个不同于硬度的部分，它们都比底层更硬。或者，表面层可以包括一个相对硬的部分，并且底层可以包括两个部分，其中一个部分具有与表面层相同的硬度，而另一个部分比表面层更软。在另一实施例中，抛光垫具有环形形状，并且化学处理台设置在垫的开放中心区域内。

40. 发明授权

US5589706A Fuse link structures through the addition of dummy structures 失效
标题翻译：保险丝连接结构通过添加虚拟结构
公开(公告)号：US5589706A
公开(公告)日：1996-12-31
申请号：US455811
申请日：1995-05-31
申请人： Alexander Mitwalsky , James G. Ryan
发明人： Alexander Mitwalsky , James G. Ryan
IPC分类号： B23K26/00 , B23K26/38 , H01L21/304 , H01L21/82 , H01L21/822 , H01L23/525 , H01L27/04 , H01L27/10
CPC分类号： H01L23/5258 , H01L2924/0002 , Y10S438/926 , Y10S438/952
摘要： An improved etch behavior is promoted to generate vertical sidewalls for fuse links that will promote reliable and repeatable laser cutting of the fuse links. In one embodiment, dummy structures are added adjacent to fuse links in order to obtain the vertical sidewalls for reliable fuse deletion. The dummy structures form no part of the fuse or circuit structure but, because of the proximity of the dummy structures to the fuse links, vertical sidewalls are promoted in a reactive ion etch which is used to form the fuse array. In another embodiment, the vertical sidewalls of the fuse links are achieved in a damascene process in which grooves are formed in an oxide layer and filled with a metal. These grooves correspond to the fuse links and alternating dummy structures. Once filled, the surface is planarized using a chemical-mechanical process. The dummy structures provide reinforcement for the metallization (metal and dielectric film), maintaining the integrity of the metallization. In both embodiments, the vertical sidewalls and constant height of the resulting fuse links promote reliable laser cutting.
摘要翻译：促进改进的蚀刻行为以产生熔丝链的垂直侧壁，这将促进熔丝链的可靠和可重复的激光切割。在一个实施例中，虚拟结构被添加到熔丝链附近，以便获得用于可靠熔丝删除的垂直侧壁。虚拟结构不构成熔丝或电路结构的一部分，但是由于虚设结构与熔丝链的接近，因此在用于形成熔丝阵列的反应离子蚀刻中促进垂直侧壁。在另一个实施例中，熔丝链的垂直侧壁在镶嵌工艺中实现，其中凹槽形成在氧化物层中并填充有金属。这些槽对应于熔断体和交替的虚拟结构。填充后，使用化学 - 机械方法将表面平坦化。虚拟结构为金属化（金属和介电膜）提供加强，保持金属化的完整性。在两个实施例中，所产生的熔断体的垂直侧壁和恒定的高度促进了可靠的激光切割。

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