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31. 发明申请

US20080118228A1 Information Recording Device and Method, Information Reproducing Device and Method, Information Recording/Reproducing Device and Method, and Computer Program 审中-公开
标题翻译：信息记录装置和方法，信息再现装置和方法，信息记录/再现装置和方法以及计算机程序
公开(公告)号：US20080118228A1
公开(公告)日：2008-05-22
申请号：US11661675
申请日：2005-08-30
申请人： Tomohiro Miura , Kenji Yamagata , Hiroshi Nakamura , Ken Miyagawa , Yukio Numakami , Kenichiro Tada , Shinya Hashimoto
发明人： Tomohiro Miura , Kenji Yamagata , Hiroshi Nakamura , Ken Miyagawa , Yukio Numakami , Kenichiro Tada , Shinya Hashimoto
IPC分类号： H04N5/91
CPC分类号： G11B19/122 , G11B20/00086 , G11B20/0021 , G11B20/10 , H04N5/913 , H04N21/2541 , H04N21/4627 , H04N21/835 , H04N21/8355 , H04N2005/91328
摘要： An information device (300) includes: first judgment elements (304) for judging whether an information recording device specified by circumstances information (400a) recorded on a second recording medium (100) coincides with the information recording device which has performed MOVE process; and control elements (307) for controlling display elements (305, etc.) so as to display that the first content information (HD content) can be reproduced if the coincidence is confirmed by the first judgment elements, controlling the content information generation elements (308, etc.) so as to generate first content information according to the circumstances information, and controlling the reproducing elements (310, etc.) so as to reproduce the generated first content information.
摘要翻译：信息装置（300）包括：用于判断由记录在第二记录介质（100）上的环境信息（400a）指定的信息记录装置是否与进行了MOVE处理的信息记录装置一致的第一判断元件（304）以及用于控制显示元件（305等）的控制元件（307），以便如果第一判断元件确认了重合，则显示可以再现第一内容信息（HD内容），控制内容信息生成元素 308等），以便根据环境信息生成第一内容信息，并且控制再现元素（310等），以再现所生成的第一内容信息。

32. 发明授权

US5130103A Method for forming semiconductor crystal and semiconductor crystal article obtained by said method 失效
标题翻译：形成半导体晶体和半导体晶体物理方法
公开(公告)号：US5130103A
公开(公告)日：1992-07-14
申请号：US752922
申请日：1991-08-30
申请人： Kenji Yamagata , Hideya Kumomi , Hiroyuki Tokunaga , Kozo Arao
发明人： Kenji Yamagata , Hideya Kumomi , Hiroyuki Tokunaga , Kozo Arao
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L27/142 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1804 , C30B25/02 , C30B25/18 , H01L21/02422 , H01L21/0245 , H01L21/02463 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/03529 , H01L31/0475 , Y02E10/547 , Y02P70/521 , Y10S428/901 , Y10T428/24917 , Y10T428/31504 , Y10T428/31678
摘要： Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.

33. 发明授权

US4843457A Drop-out correcting luminance-chrominance signal separation circuit 失效
标题翻译：滴出校正亮度 - 色度信号分离电路
公开(公告)号：US4843457A
公开(公告)日：1989-06-27
申请号：US298231
申请日：1989-01-09
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： H04N9/78 , H04N9/804 , H04N9/808 , H04N9/82 , H04N9/88
CPC分类号： H04N9/88 , H04N9/78
摘要： A luminance-chrominance signal separation circuit in which only those values of a digitized video signal which do not manifest drop-out are used for producing a luminance and a chrominance signal from linear combinations of the video signals. Different combinations are used depending on the locations of the drop-out.
摘要翻译：一种亮度色度信号分离电路，其中仅使用不显示辍学的数字化视频信号的值来产生来自视频信号的线性组合的亮度和色度信号。取决于辍学的位置使用不同的组合。

34. 发明授权

US07256104B2 Substrate manufacturing method and substrate processing apparatus 失效
标题翻译：基板制造方法和基板处理装置
公开(公告)号：US07256104B2
公开(公告)日：2007-08-14
申请号：US10841621
申请日：2004-05-10
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L22/12 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

35. 发明授权

US06202655B1 Anodizing apparatus and apparatus and method associated with the same 有权
标题翻译：阳极氧化装置及其装置及方法
公开(公告)号：US06202655B1
公开(公告)日：2001-03-20
申请号：US09282970
申请日：1999-03-31
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： B08B302
CPC分类号： H01L21/67086 , C25D11/005 , C25D11/32 , C25D17/00 , C25D17/001 , C25D17/06 , H01L21/02238 , H01L21/02255 , H01L21/31675 , H01L21/67028 , H01L21/6838 , Y10S134/902
摘要： A holder (102) made from an HF-resistant material includes annular suction pads (105, 108). The suction pad (105) is used to hold a small silicon substrate by suction, and the suction pad (108) is used to hold a large silicon substrate by suction. This makes silicon substrates with various sizes processable. A silicon substrate is held by suction by reducing a pressure in a space in a groove of the suction pad by a pump (120). An opening (103) is formed in the holder (102) so that the both surfaces of the silicon substrate are brought into contact with an HF solution (115). The silicon substrate is anodized by applying a DC voltage by using a platinum electrode (109a) as a negative electrode and a platinum electrode (109b) as a positive electrode, and thereby a substrate having a porous layer is produced.
摘要翻译：由耐高温材料制成的支架（102）包括环形吸盘（105,108）。吸盘（105）用于通过抽吸来保持小的硅衬底，并且吸盘（108）用于通过抽吸来容纳大的硅衬底。这使得具有各种尺寸的硅衬底可加工。通过泵（120）减小吸盘的凹槽中的空间中的压力，通过抽吸来保持硅衬底。在保持器（102）中形成开口（103），使得硅衬底的两个表面与HF溶液（115）接触。通过使用作为负极的铂电极（109a）和作为正极的铂电极（109b）施加直流电压来阳极氧化硅衬底，由此制造具有多孔层的衬底。

36. 发明授权

US06200878B1 SOI substrate processing method 有权
标题翻译： SOI衬底处理方法
公开(公告)号：US06200878B1
公开(公告)日：2001-03-13
申请号：US09211570
申请日：1998-12-15
申请人： Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： H01L21306
CPC分类号： H01L21/0203 , C25D11/32 , H01L21/2007 , H01L21/76259 , Y10S438/96 , Y10S438/977
摘要： An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching. In order to achieve this object, a substrate processing method includes the anodizing step of forming a porous silicon layer on a major surface of a single-crystal silicon substrate, the silicon film formation step of growing a single-crystal silicon film on the porous silicon layer, the removal step of bonding a first substrate obtained by oxidizing a surface of the single-crystal silicon film to a second substrate as a supporting substrate, and removing a single-crystal silicon portion from a lower surface side of the first substrate to expose the porous silicon layer, and the etching step of etching the exposed porous silicon layer to remove the porous silicon layer on the single-crystal silicon film, wherein in washing after the anodizing step, a time in which the first substrate is removed from the electrolytic solution and exposed to the air until washing is limited to a range in which the porous silicon layer is prevented from remaining on the single-crystal silicon film in the etching step.
摘要翻译：本发明的目的是提供一种在通过蚀刻去除多孔硅层的步骤中能够令人满意地进行蚀刻的基板处理方法。为了实现该目的，基板处理方法包括在单晶硅基板的主表面上形成多孔硅层的阳极氧化步骤，在多孔硅上生长单晶硅膜的硅膜形成步骤层，将通过将单晶硅膜的表面氧化的第一基板接合到作为支撑基板的第二基板的去除步骤，以及从第一基板的下表面侧去除单晶硅部分以暴露多孔硅层，以及蚀刻暴露的多孔硅层以除去单晶硅膜上的多孔硅层的蚀刻步骤，其中在阳极氧化步骤之后的洗涤中，将第一基底从电解液中除去的时间溶液并暴露于空气中，直到洗涤被限制在其中防止多孔硅层残留在单晶硅膜上的范围内蚀刻步骤。

37. 发明授权

US5653802A Method for forming crystal 失效
标题翻译：晶体形成方法
公开(公告)号：US5653802A
公开(公告)日：1997-08-05
申请号：US452863
申请日：1995-05-30
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： C30B25/18 , C30B31/22 , H01L21/20 , H01L21/84 , C30B25/04
CPC分类号： C30B31/22 , C30B25/18 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02645 , Y10S438/974
摘要： A method for forming a crystal comprises implanting ions on the surface of a substrate to change the ion concentration in the depth direction of said substrate surface by said ion implantation, subjecting a desired position of said substrate surface with a sufficient area for crystal growth from a single crystal to exposure treatment to/he depth where an exposed surface having larger nucleation density than the nucleation density of the surface of said substrate is exposed, thereby forming a nucleation surface comprising said exposed surface exposed by said exposure treatment and a nonnucleation surface comprising the surface of the substrate remaining without subjected to said exposure treatment, applying a crystal growth treatment for crystal growth from a single nucleus on said substrate to grow a single crystal from said single nucleus or form a polycrystal of a mass of single crystals grown from said single nucleus.
摘要翻译：一种用于形成晶体的方法包括：在衬底的表面上注入离子以通过所述离子注入改变所述衬底表面的深度方向上的离子浓度，使所述衬底表面的所需位置具有足够的晶体生长面积将暴露于具有比所述基板的表面的成核密度大的成核密度的暴露表面暴露于其中的单晶曝光处理，从而形成包含通过所述曝光处理曝光的所述暴露表面的成核表面和包含所述曝光处理的非成核表面在没有进行曝光处理的情况下保留基板的表面，在所述基板上从单个核应用晶体生长的晶体生长处理以从所述单个核生长单晶，或者形成从所述单个核生长的单晶体的多晶体核。

38. 发明授权

US5236544A Process for growing crystal 失效
标题翻译：生长晶体的工艺
公开(公告)号：US5236544A
公开(公告)日：1993-08-17
申请号：US543417
申请日：1990-06-26
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： C30B25/18 , H01L21/20 , H01L21/205 , H01L21/822
CPC分类号： H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/8221 , Y10S148/017
摘要： A process of growing a monocrystal on an insulating film provided on a metal electrode, which comprises: providing a semiconductor film on a substrate having a metal electrode and an insulating film; causing the semiconductor film and the insulating film to undergo the solid phase reaction at the interface therebetween; forming a monocrystalline cohering body of the semiconductor film at the opening of the insulating film by applying annealing for cohesion of the semiconductor film on the metal electrode; and allowing a monocrystal to grow with the monocrystalline cohering body as a seed.

39. 发明授权

US4443626A 2,3-Dihydro-indene derivatives 失效
标题翻译： 2,3-二氢 - 茚衍生物
公开(公告)号：US4443626A
公开(公告)日：1984-04-17
申请号：US385673
申请日：1982-06-07
申请人： Kanji Noda , Akira Nakagawa , Kenji Yamagata , Yoichi Nakashima , Masayoshi Tsuji , Tetsuo Aoki , Hiroyuki Ide
发明人： Kanji Noda , Akira Nakagawa , Kenji Yamagata , Yoichi Nakashima , Masayoshi Tsuji , Tetsuo Aoki , Hiroyuki Ide
IPC分类号： C07C59/82 , C07C59/88 , C07C59/90 , C07C205/56 , C07C79/46 , C07C59/86
CPC分类号： C07C59/82 , C07C205/56 , C07C59/88 , C07C59/90
摘要： Novel 2,3-dihydro-indene derivatives having remarkable anti-inflammatory effects and represented by the following formula ##STR1## wherein R.sup.1 and R.sup.2 are each a hydrogen atom, halogen atom, nitro group, lower alkyl group or lower alkyloxy group with the proviso that R.sup.1 and R.sup.2 do not take a hydrogen atom at the same time, and n is an integer of 2-4.
摘要翻译：新颖的2,3-二氢 - 茚衍生物具有显着的抗炎作用，由下式表示：其中R1和R2各自为氢原子，卤原子，硝基，低级烷基或低级烷氧基，条件是 R1和R2不同时取氢原子，n为2-4的整数。

40. 发明授权

US08922660B2 Image pickup apparatus with synchronization processes 有权
标题翻译：具有同步过程的摄像设备
公开(公告)号：US08922660B2
公开(公告)日：2014-12-30
申请号：US13352217
申请日：2012-01-17
申请人： Kenji Yamagata
发明人： Kenji Yamagata
IPC分类号： H04N5/33 , H04N5/225 , H04N13/02 , H04N5/232
CPC分类号： H04N5/2251 , H04N5/23203 , H04N5/23245 , H04N13/239 , H04N13/296
摘要： An image pickup apparatus includes a light emitting unit and a light receiving unit, a first light path changing unit, and a second light path changing unit, wherein the first light path changing unit is movable from a first state, in which a light flux from the light emitting unit is guided toward a front direction of the image pickup apparatus, into a second state in which a light flux from the light emitting unit is guided toward a front direction and a side direction of the image pickup apparatus, and wherein the second light path changing unit is movable from a first state, in which a light flux from a front direction of the image pickup apparatus is guided to the light receiving unit, into a second state in which light fluxes from a front direction and a side direction.
摘要翻译：一种图像拾取装置包括发光单元和光接收单元，第一光路改变单元和第二光路改变单元，其中第一光路改变单元可从第一状态移动，其中来自发光单元被引导到图像拾取装置的前方，到第二状态，其中来自发光单元的光束被引导到图像拾取装置的正面方向和侧面方向，并且其中第二光路改变单元可以从其中来自图像拾取装置的前方的光束被引导到光接收单元的第一状态移动到从正面方向和侧面方向光束的第二状态。

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