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31. 发明申请

US20070279502A1 SOLID-STATE IMAGE PICK-UP DEVICE AND IMAGING SYSTEM USING THE SAME 失效
标题翻译：固态图像拍摄装置和使用其的成像系统
公开(公告)号：US20070279502A1
公开(公告)日：2007-12-06
申请号：US11833146
申请日：2007-08-02
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H04N3/14
CPC分类号： H01L27/14601 , H01L21/28525 , H01L23/53271 , H01L27/14612 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid-state image pick-up device without shading in the dark state, and capable of making a dynamic range and a S/N high. Reference numeral 505 denotes an N-type cathode of a photodiode, 506 denoting a surface P-type region for forming the photodiode into an embedded structure, 508a denoting an N-type high concentration region which forms a floating diffusion and which is also a drain region of a transfer MOS transistor. Reference character 508b denotes a polysilicon lead-out electrode brought into direct contact with the N-type high concentration region. Light incident from the surface passes through an aperture without a metal third layer 525 to enter into the photodiode. Among incident lights, light reflected by the top surface of a gate electrode 504 of the transfer MOS transistor is reflected by a first layer metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficiently before entering into the floating diffusion section, thereby making the aliasing extremely small.
摘要翻译：本发明提供了一种固态图像拾取装置，其在黑暗状态下没有阴影，并且能够使动态范围和S / N高。附图标记505表示光电二极管的N型阴极，506表示用于将光电二极管形成嵌入结构的表面P型区域，508表示形成浮动扩散的N型高浓度区域，也表示为漏极区域。附图标记508b表示与N型高浓度区域直接接触的多晶硅引出电极。从表面入射的光通过没有金属第三层525的孔径进入光电二极管。在入射光中，由转移MOS晶体管的栅电极504的上表面反射的光被多晶硅上方的第一层金属521反射，从而在进入浮置之前多次重复反射以充分衰减扩散部分，从而使得混叠非常小。

32. 发明申请

US20060278896A1 Solid-state image sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US20060278896A1
公开(公告)日：2006-12-14
申请号：US11448020
申请日：2006-06-07
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L29/768
CPC分类号： H01L27/14612 , H01L27/14623
摘要： A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
摘要翻译：固态摄像装置具有像素，该像素包括根据入射光量产生电荷的光电二极管，浮动扩散部分，电荷转移晶体管，其将电荷从光电转换传递到浮动扩散部分基于保持在所述浮动扩散部分中的所述电荷输出信号的读取电路和设置成在光电转换上覆盖电荷转移晶体管的栅电极的侧壁的遮光部件部分侧。

33. 发明申请

US20050035382A1 Solid state image sensing device having pixels provided with barrier layer underneath transistor regions and camera using said device 审中-公开
标题翻译：具有在晶体管区域下方设置有阻挡层的像素的固态图像感测装置和使用所述装置的相机
公开(公告)号：US20050035382A1
公开(公告)日：2005-02-17
申请号：US10944941
申请日：2004-09-21
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

34. 发明授权

US6144427A Polymer dispersed liquid crystal panel 失效
标题翻译：聚合物分散液晶面板
公开(公告)号：US6144427A
公开(公告)日：2000-11-07
申请号：US568319
申请日：1995-12-06
申请人： Hiroaki Hoshi , Shunsuke Inoue
发明人： Hiroaki Hoshi , Shunsuke Inoue
IPC分类号： G02F1/1333 , G02F1/1334 , G02F1/1335 , G02F1/136 , G02F1/1368
CPC分类号： G02F1/133514 , G02F1/1334 , G02F2001/133521 , G02F2203/02
摘要： A liquid crystal display device comprises a reflective type liquid crystal panel with pixels which are arranged in two-dimentionally and which modulate irradiated light utilizing polymer dispersed liquid crystal capable of exhibiting two conditions including scattering and unscattering. The device is provided with an optical member having a multiple-interference effect at a predetermined angle with respect to the surface of the reflective type liquid crystal panel.
摘要翻译：液晶显示装置包括具有二维配置的像素的反射型液晶面板，利用能够呈现包括散射和不散射的两个条件的聚合物分散液晶来调制照射光。该装置设置有相对于反射型液晶面板的表面以预定角度具有多重干涉效应的光学构件。

35. 发明授权

US5712684A Viewing apparatus with visual axis detector 失效
标题翻译：用视轴检测仪观察仪器
公开(公告)号：US5712684A
公开(公告)日：1998-01-27
申请号：US624201
申请日：1996-04-03
申请人： Shunsuke Inoue , Hidekazu Takahashi
发明人： Shunsuke Inoue , Hidekazu Takahashi
IPC分类号： G02B21/00 , A61B3/103 , A61B3/14 , G02B27/02 , G03B13/02 , H04N5/225 , H04N5/232
CPC分类号： G03B13/02 , G02B27/02 , G03B2213/025
摘要： A viewing apparatus exhibiting high performance and an image forming apparatus including the same. The viewing apparatus includes a projection optical system for projecting an image on a viewer's eye, a detector for detecting the refractive power of the viewer's eye, and an adjustor for adjusting the projection optical system so that the image is formed substantially on a viewer's eye fundus. The imaging apparatus includes an imager for forming an image of an object, a projection optical system for projecting the object image on the viewer's eye, a detector for detecting the refractive power of the viewer's eye, and an adjustor for adjusting the projection optical system so that the object image is formed substantially on the viewer's eye fundus in accordance with the refractive power of the viewer's eye.
摘要翻译：具有高性能的观赏装置和包括该观赏装置的图像形成装置。该观看装置包括投影光学系统，用于将观看者的眼睛上的图像投影，用于检测观看者的眼睛的屈光力的检测器，以及用于调整投影光学系统的调节器，使得图像基本上形成在观察者眼底。成像装置包括用于形成物体的图像的成像器，用于将观察者的眼睛上的物体图像投射的投影光学系统，用于检测观察者的眼睛的屈光度的检测器，以及用于调整投影光学系统的调节器对象图像基本上在观看者的眼底上形成，根据观看者的眼睛的屈光力。

36. 发明申请

US20100187581A1 SOLID-STATE IMAGE SENSING DEVICE AND CAMERA SYSTEM USING THE SAME 有权
标题翻译：固态图像感测装置和相机使用相机
公开(公告)号：US20100187581A1
公开(公告)日：2010-07-29
申请号：US12727469
申请日：2010-03-19
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

37. 发明授权

US07723766B2 Solid-state image sensing device and camera system using the same 有权
标题翻译：固态摄像装置和相机系统采用相同的方式
公开(公告)号：US07723766B2
公开(公告)日：2010-05-25
申请号：US12048886
申请日：2008-03-14
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.
摘要翻译：固态图像感测装置包括多个像素。每个像素具有光电二极管，第一晶体管和第二晶体管。光电二极管由第一导电型半导体区域和第二导电型半导体区域构成。第一和第二导电类型彼此相反。第一晶体管具有形成在第二导电型半导体区域中的第一导电型漏极区域，以将信号电荷转移到漏极区域。第二晶体管具有形成在第二导电型半导体区域中并且具有第一导电类型的源极区和漏极区。在第一晶体管的漏极区域和第二晶体管的源极区域和/或漏极区域的下方提供至少一个第二导电型势垒。

38. 发明授权

US07709780B2 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US07709780B2
公开(公告)日：2010-05-04
申请号：US12111342
申请日：2008-04-29
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.
摘要翻译：光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准膜和氧化硅膜。

39. 发明申请

US20080164500A1 SOLID-STATE IMAGE SENSING DEVICE AND CAMERA SYSTEM USING THE SAME 有权
公开(公告)号：US20080164500A1
公开(公告)日：2008-07-10
申请号：US12048886
申请日：2008-03-14
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

40. 发明申请

US20070018080A1 Photoelectric conversion device and camera using photoelectric conversion device 有权
标题翻译：光电转换装置及相机采用光电转换装置
公开(公告)号：US20070018080A1
公开(公告)日：2007-01-25
申请号：US11527485
申请日：2006-09-27
申请人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
发明人： Shunsuke Inoue , Hiroshi Yuzurihara , Tetsuya Itano
IPC分类号： H01J40/14 , H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462
摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.
摘要翻译：光电转换装置具有排列成阵列的像素。每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。

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