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31. 发明授权

US07389025B2 Coupling light into microresonators 有权
标题翻译：将光耦合到微谐振器中
公开(公告)号：US07389025B2
公开(公告)日：2008-06-17
申请号：US11277769
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , B82Y20/00 , G01N21/648 , G01N21/7746 , G01N2021/6439 , G02B6/1226 , G02B6/29341
摘要： An optical microresonator device is described including an optical waveguide and an optical microresonator positioned so as to optically couple to the waveguide. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core.
摘要翻译：描述了一种光学微谐振器装置，其包括光波导和光学微谐振器，其被定位成光耦合到波导。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。

32. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

33. 发明申请

US20130075774A1 Light Converting And Emitting Device With Minimal Edge Recombination 有权
标题翻译：具有最小边缘重组的光转换和发射装置
公开(公告)号：US20130075774A1
公开(公告)日：2013-03-28
申请号：US13701065
申请日：2011-05-25
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

34. 发明申请

US20110101402A1 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：US20110101402A1
公开(公告)日：2011-05-05
申请号：US13000592
申请日：2009-06-10
申请人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
发明人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/08 , H01L33/44 , H01L2933/0091
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。外涂层具有大于第二折射率的第三折射率。

35. 发明申请

US20100155694A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 有权
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20100155694A1
公开(公告)日：2010-06-24
申请号：US12715957
申请日：2010-03-02
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/04
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

36. 发明申请

US20080272387A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR "WHITE" EMISSION 失效
标题翻译：适应短波长LED，用于多色，宽带或“白色”排放
公开(公告)号：US20080272387A1
公开(公告)日：2008-11-06
申请号：US12174087
申请日：2008-07-16
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

37. 发明申请

US20110101382A1 LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：光转换结构
公开(公告)号：US20110101382A1
公开(公告)日：2011-05-05
申请号：US13000608
申请日：2009-06-03
申请人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
发明人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
IPC分类号： H01L31/173 , H01L31/0232
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了光转换结构。光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。结构化外涂层具有大于第二折射率的第三折射率。

38. 发明授权

US07700938B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 失效
公开(公告)号：US07700938B2
公开(公告)日：2010-04-20
申请号：US12172549
申请日：2008-07-14
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.

39. 发明授权

US07532790B2 Method of coupling light into microresonators 失效
标题翻译：将光耦合到微谐振器的方法
公开(公告)号：US07532790B2
公开(公告)日：2009-05-12
申请号：US11277770
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/42 , G02B6/12 , G02B6/10 , G02B6/00
CPC分类号： G02B6/122 , G02B6/12007 , G02B6/30 , G02B6/4204
摘要： A method of making a microresonator device includes the steps of providing at least a first substrate and providing a waveguide integrated on the substrate. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core. Another step is positioning a microresonator so that it is in an optically coupling relationship with the waveguide.
摘要翻译：制造微谐振器器件的方法包括提供至少第一衬底并提供集成在衬底上的波导的步骤。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。另一步是定位微谐振器，使其与波导处于光学耦合关系。

40. 发明申请

US20080272362A1 ADAPTING SHORT-WAVELENGTH LED'S FOR POLYCHROMATIC, BROADBAND, OR WHITE EMISSION 失效
标题翻译：适应短波长LED，用于多色，宽带或白色排放
公开(公告)号：US20080272362A1
公开(公告)日：2008-11-06
申请号：US12172549
申请日：2008-07-14
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

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