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    • 31. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09048107B2
    • 2015-06-02
    • US13876170
    • 2011-09-26
    • Hiroomi EguchiAtsushi OnogiTakashi OkawaKiyoharu Hayakawa
    • Hiroomi EguchiAtsushi OnogiTakashi OkawaKiyoharu Hayakawa
    • H01L29/06H01L27/06H01L29/08H01L29/739H01L29/861H01L29/16H01L29/20
    • H01L29/0611H01L27/0676H01L29/0696H01L29/0834H01L29/1608H01L29/20H01L29/2003H01L29/7394H01L29/861
    • A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.
    • 半导体器件包括半导体层; 布置在半导体层的第一元件区域中的第一半导体元件的第一类型具有第一和第二主电极并切换电流; 以及布置在所述半导体层的第二元件区域中的第二类型的第二半导体元件,具有第三和第四主电极,并且使所述电流自由转动。 第一和第二元件区域在与电流流动的方向正交的方向上相邻,并且当从上方观察半导体层时,在整个元件区域上形成为环形。 第一主电极与第三主电极电连接,第二主电极与第四主电极电连接。 当从上方观察半导体层时,第一主电极的长度与第二主电极的长度的比例大于第三主电极的长度与第四主电极的长度的比率。
    • 32. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20140035036A1
    • 2014-02-06
    • US14111704
    • 2011-05-17
    • Atsushi OnogiHiroomi EguchiTakashi Okawa
    • Atsushi OnogiHiroomi EguchiTakashi Okawa
    • H01L29/78
    • H01L29/7816H01L29/0634H01L29/0696H01L29/0878H01L29/402H01L29/42368H01L29/7394H01L29/7824
    • A lateral semiconductor device including a semiconductor substrate; a buried oxide layer formed on the semiconductor substrate, and an active layer formed on the buried oxide layer. The active layer includes a first conductivity type well region, a second conductivity type well region, and a first conductivity type drift region interposed between the first conductivity type well region and the second conductivity type well region. A region where current flows because of carriers moving between the first conductivity type well region and the second conductivity type well region, and a region where no current flows are formed alternately between the first conductivity type well region and the second conductivity type well region, in a direction perpendicular to a carrier moving direction when viewed in a plan view.
    • 一种包括半导体衬底的横向半导体器件; 形成在半导体衬底上的掩埋氧化物层和形成在掩埋氧化物层上的有源层。 有源层包括介于第一导电类型阱区和第二导电类型阱区之间的第一导电类型阱区,第二导电类型阱区和第一导电类型漂移区。 由于载流子在第一导电类型阱区域和第二导电类型阱区域之间移动,并且在第一导电类型阱区域和第二导电类型阱区域之间交替形成没有电流流动的区域,电流流动的区域, 在平面图中观察时垂直于载体移动方向的方向。
    • 34. 发明授权
    • Method and apparatus for applying electrode mixture paste
    • 施加电极混合糊的方法和装置
    • US08142837B2
    • 2012-03-27
    • US11920045
    • 2006-04-26
    • Takashi OkawaToru OkamotoTomoki IkedaMasao Fukuda
    • Takashi OkawaToru OkamotoTomoki IkedaMasao Fukuda
    • B05C11/10
    • H01M4/0404H01M4/139H01M4/26H01M10/0587H01M10/345
    • An electrode mixture paste application method includes: a first step of unwinding a core material (2) wound in a coil shape; a second step of applying an electrode mixture paste (5) to both sides of the core material; a third step of adjusting an application amount of the electrode mixture paste; a fourth step of drying a paste-coated sheet with the electrode mixture paste applied to the both sides thereof; and a fifth step of winding the paste-coated sheet (6) in a coil shape, wherein, in the fifth step, the paste-coated sheet is wound such that each of widthwise edge portions of a mixture-formed portion (9) is prevented from sequentially overlapping itself. This can achieve a stable method for applying an electrode mixture paste in which the deformation of an electrode caused by a dog-bone shape generated at both edge portions of a mixture-formed portion can be avoided.
    • 电极混合糊剂涂布方法包括:卷绕成线圈形状的芯材(2)退绕的第一步骤; 将电极混合物浆料(5)施加到芯材的两侧的第二步骤; 调整电极混合糊剂的涂敷量的第3工序; 第四步骤,将糊状涂布片材施加到其两面上; 以及将糊状涂布片(6)卷绕成线圈状的第五工序,其中,在第五工序中,将糊状涂布片卷绕成混合形成部(9)的宽度方向边缘部分为 防止顺序重叠。 这可以实现稳定的施加电极混合糊剂的方法,其中可以避免在混合物形成部分的两个边缘部分处产生的狗骨形状导致的电极变形。
    • 40. 发明授权
    • Dielectric ceramic composition
    • 电介质陶瓷组合物
    • US5223462A
    • 1993-06-29
    • US825801
    • 1992-01-21
    • Takashi Okawa
    • Takashi Okawa
    • C04B35/462C04B35/468
    • C04B35/4682C04B35/462
    • A dielectric ceramic composition of matter characterized in that the composition of matter contains 0.003 to 0.3% by weight manganese in addition to the main composition of matter represented by the composition formula xBaO.multidot.yNd.sub.2 O.sub.3 .multidot.zTiO.sub.2 .multidot.wBi.sub.2 O.sub.3 wherein 0.110.ltoreq.x.ltoreq.0.170, 0.120.ltoreq.y.ltoreq.0.185, 0.630.ltoreq.z.ltoreq. 0.710, 0.020.ltoreq.w.ltoreq.0.090, and x+y+z+w=1. This composition of matter is high in dielectric constant, low in the temperature dependency of resonance frequency in a resonator, and high in Q-value.
    • 一种物质的电介质陶瓷组合物,其特征在于除了由组成式xBaOxyNd2O3xzTiO2xwBi2O3表示的物质的主要组成以外,物质组成含有0.003至0.3重量%的锰,其中0.110≤x≤0.170,0.120 y =0.185,0.630≤z=0.710,0.020≤w= 0.090,x + y + z + w =​​ 1。 这种物质的组成是介电常数高,谐振器谐振频率的温度依赖性低,Q值高。