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31. 发明申请

US20100260227A1 SEMICONDUCTOR LASER APPARATUS AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20100260227A1
公开(公告)日：2010-10-14
申请号：US12821826
申请日：2010-06-23
申请人： Yasuyuki BESSHO , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki BESSHO , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/40 , H01L21/302 , H01S5/323
CPC分类号： H01S5/02272 , H01L2224/48463 , H01S5/02469 , H01S5/22 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
摘要翻译：蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠半导体激光器件。

32. 发明授权

US07804871B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07804871B2
公开(公告)日：2010-09-28
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

33. 发明授权

US07756180B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07756180B2
公开(公告)日：2010-07-13
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

34. 发明申请

US20090290612A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20090290612A1
公开(公告)日：2009-11-26
申请号：US12251529
申请日：2008-10-15
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Yuji Okura , Tadashi Takase
IPC分类号： H01S5/22
CPC分类号： H01S5/2231 , H01S5/1064 , H01S5/4025 , H01S5/4031
摘要： A semiconductor laser having a double channel ridge structure includes: a ridge; channel portions located on opposite sides of the ridge, sandwiching the ridge, and having an equivalent refractive index lower than the equivalent refractive index of the ridge; and layers defining outside surfaces of the channel portions and, having an equivalent refractive index higher than the equivalent refractive index of the channel portions. The ridge has a flare ridge structure with a width that is widened toward a light outgoing end surface, and the width of the channel portions where the width of the ridge is the narrowest is wider than the channel portions at the light outgoing end surface.
摘要翻译：具有双通道脊结构的半导体激光器包括：脊; 位于脊的相对侧的通道部分，夹着脊，并且具有低于脊的等效折射率的等效折射率; 以及限定通道部分的外表面的层，并且具有高于通道部分的等效折射率的等效折射率。该脊具有朝向光出射端面变宽的宽度的喇叭形棱结构，并且脊的宽度最窄的通道部分的宽度比在光出射端面处的通道部分宽。

35. 发明授权

US07514613B2 Keyboard device for keyboard instrument 失效
标题翻译：键盘乐器键盘设备
公开(公告)号：US07514613B2
公开(公告)日：2009-04-07
申请号：US11185857
申请日：2005-07-21
申请人： Tsutomu Yamaguchi
发明人： Tsutomu Yamaguchi
IPC分类号： G10C3/18
CPC分类号： G10C3/12
摘要： A keyboard device for a keyboard instrument, which can be manufactured by a simplified manufacturing process and at reduced manufacturing costs, is disclosed. A keyframe is formed by a molded piece of a synthetic resin. A plurality of front rail pins and a plurality of balance rail pins are arranged in a juxtaposed manner in a left-right direction at a front part and a central part of the keyframe in a front-rear direction. A plurality of keys are made of wood and each have a balance rail pin hole formed in a central portion thereof in the front-rear direction. The keys are swingably supported on the keyframe in a state where the balance rail pins are each engaged with the balance rail pin hole associated therewith and at the same time the keys are prevented from being swung in the left-right direction by the front rail pins associated therewith.
摘要翻译：公开了一种用于键盘乐器的键盘装置，其可以通过简化的制造过程和降低的制造成本来制造。关键帧由合成树脂的模制件形成。多个前轨销和多个平衡轨销在前后方向上以关键框的前部和中心部分沿左右方向并列布置。多个键由木材制成，并且每个键具有在前后方向上形成在其中心部分的平衡导轨销孔。在平衡轨销彼此相配合的平衡轨针销孔的状态下，键被可摆动地支撑在关键帧上，同时通过前导轨销防止键在左右方向上摆动相关联。

36. 发明申请

US20090046755A1 INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：集成半导体激光器件及其制造方法
公开(公告)号：US20090046755A1
公开(公告)日：2009-02-19
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/026
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译：提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹陷部分的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

37. 发明申请

US20080127807A1 Stopper for Keyboard-Based Musical Instruments 失效
标题翻译：基于键盘的乐器挡板
公开(公告)号：US20080127807A1
公开(公告)日：2008-06-05
申请号：US11628254
申请日：2005-05-24
申请人： Tsutomu Yamaguchi
发明人： Tsutomu Yamaguchi
IPC分类号： G10C3/12
CPC分类号： G10H1/346 , G10C3/12
摘要： A stopper for a keyboard-based musical instrument is provided for accomplishing a good stopping feeling of a pivotable member, thereby making it possible to improve a touch feeling and restrain collision noise and other noise. A stopper 7 for a keyboard-based musical instrument with which a pivotable member 6 comes into contact while said pivotal member pivotally moves in association with a key touch, thereby restraining the pivotal movement of said pivotable member 6, comprises a mass 26, a first cushion 25 laminated on a front side of said mass 26, and a second cushion 27 laminated on a back side of said mass 26. Preferably, the mass 26 is made of a metal, and the first cushion 25 is harder than the second cushion 27.
摘要翻译：提供了一种用于基于键盘的乐器的止动器，用于实现可枢转构件的良好的停止感，从而可以改善触感并抑制碰撞噪声和其他噪音。用于基于键盘的乐器的止动器7，当枢转构件与钥匙接触相关联地枢转运动时，可枢转构件6与其接触，从而限制所述可枢转构件6的枢转运动，包括质量块26，第一层叠在所述坯料26的前侧的衬垫25和层叠在所述坯料26的背面的第二衬垫27。优选地，质量块26由金属制成，并且第一衬垫25比第二衬垫27硬。

38. 发明申请

US20080067541A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20080067541A1
公开(公告)日：2008-03-20
申请号：US11928185
申请日：2007-10-30
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

39. 发明申请

US20070264738A1 Monolithic semiconductor laser and method of manufacturing the same 失效
标题翻译：单片半导体激光器及其制造方法
公开(公告)号：US20070264738A1
公开(公告)日：2007-11-15
申请号：US11878027
申请日：2007-07-20
申请人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
发明人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
IPC分类号： H01L21/02
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译：一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。第一和第二有源层由彼此不同的半导体材料制成。第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。

40. 发明申请

US20060222036A1 Semiconductor laser device and method of fabricating the same 有权
公开(公告)号：US20060222036A1
公开(公告)日：2006-10-05
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01S3/06 , H01S3/07
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

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