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31. 发明申请

US20070170479A1 Polarization transfer device and control method therefor 失效
标题翻译：极化传输装置及其控制方法
公开(公告)号：US20070170479A1
公开(公告)日：2007-07-26
申请号：US11653231
申请日：2007-01-16
申请人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
发明人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
IPC分类号： H01L29/94
CPC分类号： H01L28/55
摘要： A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.
摘要翻译：极化转移装置包括连续形成为一体的铁电薄膜; 通过将铁电薄膜放置在第一栅极电极和第二栅极电极之间而形成的多个极化开关; 以及通过将铁电薄膜放置在第一电极板和第二电极板之间而形成的多个偏振累积器，其中多个偏振开关和多个偏振累积器交替布置。

32. 发明申请

US20060138382A1 Precursor composition, method of manufacturing precursor composition, inkjet coating ink, method of manufacturing ferroelectric film, piezoelectric device, semiconductor device, piezoelectric actuator, inkjet recording head, and inkjet printer 有权
标题翻译：前体组合物，前体组合物的制造方法，喷墨涂布油墨，铁电体膜的制造方法，压电元件，半导体元件，压电致动器，喷墨记录头，喷墨打印机
公开(公告)号：US20060138382A1
公开(公告)日：2006-06-29
申请号：US11312971
申请日：2005-12-20
申请人： Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
发明人： Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
IPC分类号： H01L41/18 , C04B35/00 , B05D5/12
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/82 , C01P2004/03 , C01P2006/40 , C04B35/493 , C04B35/495 , C04B35/499 , C04B35/624 , C04B35/6264 , C04B2235/3251 , C04B2235/3287 , C04B2235/3296 , C04B2235/3418 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C09D11/30 , C09D11/36 , C23C18/1216 , C23C18/1254 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L41/1876 , H01L41/318
摘要： A precursor composition including a precursor for forming a ferroelectric, the ferroelectric being shown by a general formula AB1-XCXO3, an element A including at least Pb, an element B including at least one of Zr, Ti, V, W, and Hf, an element C including at least one of Nb and Ta, the precursor including at least the element B and the element C and part of the precursor including an ester bond, the precursor being dissolved or dispersed in an organic solvent, and the organic solvent including at least a first alcohol and a second alcohol having a boiling point and viscosity higher than a boiling point and viscosity of the first alcohol.
摘要翻译：一种前体组合物，其包括用于形成铁电体的前体，所述铁电体由通式AB 1-X C X 3 O 3所示，包含至少Pb的元素A，包括Zr，Ti，V，W和Hf中的至少一种的元素B，包含Nb和Ta中的至少一种的元素C，所述前体至少包含元素B和元素C 所述前体包含酯键的一部分，所述前体溶解或分散在有机溶剂中，所述有机溶剂至少包含第一醇和第二醇，所述第一醇和第二醇的沸点和粘度高于沸点和粘度先喝酒

33. 发明申请

US20060118844A1 Transistor type ferroelectric memory and method of manufacturing the same 审中-公开
标题翻译：晶体管型铁电存储器及其制造方法
公开(公告)号：US20060118844A1
公开(公告)日：2006-06-08
申请号：US11294703
申请日：2005-12-06
申请人： Takeshi Kijima , Yasuaki Hamada , Takamitsu Higuchi
发明人： Takeshi Kijima , Yasuaki Hamada , Takamitsu Higuchi
IPC分类号： H01L21/00 , H01L29/94
CPC分类号： H01L29/6684 , H01L29/40111 , H01L29/516 , H01L29/78391
摘要： A transistor type ferroelectric memory includes a group-IV semiconductor layer, an oxide semiconductor layer formed over the group-IV semiconductor layer, a ferroelectric layer formed over the oxide semiconductor layer, a gate electrode formed over the ferroelectric layer, and a source region and a drain region formed in the group-IV semiconductor layer.
摘要翻译：晶体管型铁电体存储器包括IV族半导体层，形成在IV族半导体层上的氧化物半导体层，形成在该氧化物半导体层上的铁电层，在该铁电层上形成的栅电极和源极区，以及形成在IV族半导体层中的漏极区域。

34. 发明申请

US20060088731A1 Ferroelectric film, ferroelectric capacitor, ferroelectric memory, piezoelectric element, semiconductor element, method of manufacturing ferroelectric film, and method of manufacturing ferroelectric capacitor 审中-公开
公开(公告)号：US20060088731A1
公开(公告)日：2006-04-27
申请号：US11286284
申请日：2005-11-25
申请人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
发明人： Takeshi Kijima , Yasuaki Hamada , Eiji Natori , Koji Ohashi
IPC分类号： B05D5/12
CPC分类号： C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/77 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C01P2006/80 , H01B1/08 , H01G4/1254 , H01G4/33 , H01L21/02197 , H01L21/02282 , H01L21/316 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≦x

35. 发明授权

US08075795B2 Piezoelectrics, piezoelectric element, and piezoelectric actuator 有权
标题翻译：压电元件和压电元件
公开(公告)号：US08075795B2
公开(公告)日：2011-12-13
申请号：US12402828
申请日：2009-03-12
申请人： Yasuaki Hamada , Akio Konishi , Takeshi Kijima
发明人： Yasuaki Hamada , Akio Konishi , Takeshi Kijima
IPC分类号： C04B35/49 , B41J2/00 , C01G33/00
CPC分类号： C04B35/493 , C04B35/624 , C04B2235/3251 , C04B2235/3287 , C04B2235/3418 , C04B2235/441 , C04B2235/449 , C04B2235/768 , H01L41/0805 , H01L41/1876 , H01L41/318
摘要： A piezoelectric body includes a perovskite type compound that is expressed by a compositional formula being Pb (Zrx Ti1-x)1-y My O3, where M is at least one of Ta and Nb, x is in a range of 0.51≦x≦0.57, and y is in a range of 0.05≦y
摘要翻译：压电体包括由组成式表示为Pb（Zr x Ti 1-x）1-y My O 3的钙钛矿型化合物，其中M是Ta和Nb中的至少一种，x在0.51和n1E的范围内; x＆ ; 0.57，y在0.05＆lt; lEE; y <0.2的范围内，其中，钙钛矿型化合物含有SiO 2和GeO 2中的至少一种作为添加剂，添加剂的添加量为0.5摩尔％以上但为5 相对于钙钛矿型化合物的量为mol％以下。

36. 发明授权

US07504682B2 Polarization transfer device and control method therefor 失效
标题翻译：极化传输装置及其控制方法
公开(公告)号：US07504682B2
公开(公告)日：2009-03-17
申请号：US11653231
申请日：2007-01-16
申请人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
发明人： Masami Hashimoto , Takeshi Kijima , Yasuaki Hamada , Akio Konishi , Tatsuya Shimoda
IPC分类号： H01L27/115
CPC分类号： H01L28/55
摘要： A polarization transfer device includes a ferroelectric thin film formed continuously as one piece; a plurality of polarization switches formed by placing the ferroelectric thin film between a first gate electrode and a second gate electrode; and a plurality of polarization accumulators formed by placing the ferroelectric thin film between a first electrode plate and a second electrode plate, wherein the plurality of polarization switches and the plurality of polarization accumulators are arranged alternately.
摘要翻译：极化转移装置包括连续形成为一体的铁电薄膜; 通过将铁电薄膜放置在第一栅极电极和第二栅极电极之间而形成的多个极化开关; 以及通过将铁电薄膜放置在第一电极板和第二电极板之间而形成的多个偏振累积器，其中多个偏振开关和多个偏振累积器交替布置。

37. 发明授权

US07485182B2 Precursor composition, method for manufacturing precursor composition, method for manufacturing ferroelectric film, piezoelectric element, semiconductor device, piezoelectric actuator, ink jet recording head, and ink jet printer 有权
标题翻译：前体组合物，前体组合物的制造方法，铁电体膜的制造方法，压电元件，半导体装置，压电致动器，喷墨记录头，喷墨打印机
公开(公告)号：US07485182B2
公开(公告)日：2009-02-03
申请号：US11129475
申请日：2005-05-16
申请人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
发明人： Takeshi Kijima , Yasuaki Hamada , Mayumi Ueno
IPC分类号： C23C18/00
CPC分类号： C04B35/493 , B41J2/14233 , B41J2202/03 , C01G25/00 , C01G33/006 , C01P2002/34 , C01P2002/72 , C01P2002/82 , C01P2006/40 , C01P2006/42 , C04B35/624 , C04B35/6264 , C04B2235/3251 , C04B2235/3287 , C04B2235/3427 , C04B2235/441 , C04B2235/449 , C04B2235/761 , C23C18/1216 , C23C18/1241 , C23C18/1254 , H01L21/31691 , H01L27/11502 , H01L41/1876 , H01L41/318
摘要： To provide precursor compositions for forming ferroelectric, methods for manufacturing precursor compositions, and methods for forming ferroelectric films using precursor compositions, which have excellent composition controllability in a liquid phase method, and in which metal compositions such as lead can be reused. A precursor composition pertains to a precursor composition including a precursor for forming a ferroelectric, wherein the ferroelectric is expressed by a general formula of AB1-xCxO3, where an element A is composed of at least Pb, an element B is composed of at least one of Zr, Ti, V, W and Hf, an element C is composed of at least one of Nb and Ta, and the precursor includes at least the element B and the element C, and has an ester-bond in a part thereof.
摘要翻译：提供用于形成铁电体的前体组合物，用于制备前体组合物的方法，以及使用在液相法中具有优异的组成可控性的前体组合物形成铁电体膜的方法，其中可以重复使用诸如铅的金属组合物。前体组合物涉及包含用于形成铁电体的前体的前体组合物，其中铁电体由通式AB1-xCxO3表示，其中元素A至少由Pb构成，元素B由至少一个的Zr，Ti，V，W和Hf中的至少一种元素，元素C由Nb和Ta中的至少一种构成，前体至少包含元素B和元素C，其一部分具有酯键。

38. 发明授权

US07266007B2 Device structure of ferroelectric memory and nondestructive reading method 失效
标题翻译：铁电存储器和非破坏性读取方法的器件结构
公开(公告)号：US07266007B2
公开(公告)日：2007-09-04
申请号：US11089365
申请日：2005-03-24
申请人： Takeshi Kijima , Yasuaki Hamada
发明人： Takeshi Kijima , Yasuaki Hamada
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , H01L27/101
摘要： A method for reading a nondestructive readout type ferroelectric memory device including a process in which 1-bit data is written in a pair of a cell for storage and a cell for reference disposed in series in the ferroelectric memory device, and a process in which a response obtained when a pulse is impressed to the 1-bit data written in the pair of a cell for storage and a cell for reference is resonated by a resonant circuit with a specified resonance frequency provided at a readout side to thereby output an output signal to be nondestructively readout.
摘要翻译：一种用于读取非破坏性读出型铁电存储器件的方法，包括将1位数据写入用于存储的单元格和用于参考的用于参考的单元格串联布置在铁电存储器件中的处理，在写入用于存储的单元对的1比特数据中施加脉冲并且通过设置在读出侧的规定的共振频率的谐振电路使参考的单元谐振，从而将输出信号输出到非破坏性读出。

39. 发明申请

US20070163879A1 Method of manufacturing insulating target material 审中-公开
标题翻译：绝缘材料的制造方法
公开(公告)号：US20070163879A1
公开(公告)日：2007-07-19
申请号：US11654792
申请日：2007-01-18
申请人： Koji Ohashi , Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
发明人： Koji Ohashi , Takeshi Kijima , Setsuya Iwashita , Yasuaki Hamada
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C04B35/493 , C04B35/6262 , C04B35/62685 , C04B35/645 , C04B2235/3251 , C04B2235/3418 , C04B2235/441 , C23C14/088
摘要： A method of manufacturing an insulating target material for obtaining an insulating complex oxide film of a general formula AB1-xCxO3, the method including: mixing an oxide of an element A, an oxide of an element B, and an oxide of an element C, subjecting the mixed powder to heat treatment, and pulverizing the resulting product to obtain a first powder; mixing the first powder and a solution including at least one of an Si raw material and a Ge raw material and obtaining a second powder from the mixture of the first powder and the solution; subjecting the second powder to heat treatment and pulverizing the resulting product to obtain a third powder; and subjecting the third powder to heat treatment.
摘要翻译：一种制造用于获得通式AB 1-x C x O 3 N的绝缘复合氧化物膜的绝缘靶材料的制造方法，方法包括：将元素A的氧化物，元素B的氧化物和元素C的氧化物混合，使混合粉末进行热处理，并粉碎所得产物以获得第一粉末; 混合第一粉末和包含Si原料和Ge原料中的至少一种的溶液，并从第一粉末和溶液的混合物中获得第二粉末; 对第二粉末进行热处理并粉碎所得产物以获得第三粉末; 并对第三粉末进行热处理。

40. 发明申请

US20070138522A1 Memory device 失效
标题翻译：内存设备
公开(公告)号：US20070138522A1
公开(公告)日：2007-06-21
申请号：US11639174
申请日：2006-12-14
申请人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
发明人： Takeshi Kijima , Yasuaki Hamada , Tatsuya Shimoda
IPC分类号： H01L29/94
CPC分类号： G11C11/22 , H01L27/11507 , H01L28/56
摘要： A memory device including: a lower electrode; a ferroelectric layer formed above the lower electrode; a charge compensation layer formed above the ferroelectric layer and including an oxide having a composition differing from a composition of the ferroelectric layer; and upper electrodes formed above the charge compensation layer. The upper electrodes includes: a saturated polarization forming electrode used for forming a domain polarized to saturation in a predetermined direction in a predetermined region of the ferroelectric layer; a writing electrode disposed apart from the saturated polarization forming electrode; and a reading electrode disposed apart from the writing electrode.
摘要翻译：一种存储装置，包括：下电极; 形成在下电极上方的铁电层; 电荷补偿层，其形成在所述铁电层的上方，并且具有与所述铁电体层的组成不同的组成的氧化物; 以及形成在电荷补偿层上方的上电极。上电极包括：饱和极化形成电极，用于在铁电层的预定区域中形成在预定方向上偏振到饱和的畴; 写入电极，与饱和偏振形成电极分开设置; 以及与写入电极分开设置的读取电极。

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