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31. 发明授权

US07005238B2 Apparatus for processing substrate and method of processing the same 失效
公开(公告)号：US07005238B2
公开(公告)日：2006-02-28
申请号：US11030135
申请日：2005-01-07
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
IPC分类号： G03C5/00
CPC分类号： H01L21/6715 , B05C5/0254 , B05C11/08 , G03F7/168 , G03F7/3021 , G03F7/38 , G03F7/70358 , G03F7/70558 , H01L21/67109 , H01L21/67115
摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

32. 发明申请

US20060008747A1 Device manufacturing method 失效
标题翻译：器件制造方法
公开(公告)号：US20060008747A1
公开(公告)日：2006-01-12
申请号：US11175275
申请日：2005-07-07
申请人： Daisuke Kawamura , Akiko Mimotogi , Takashi Sato
发明人： Daisuke Kawamura , Akiko Mimotogi , Takashi Sato
IPC分类号： G03F7/00
CPC分类号： G03F7/70341
摘要： A device manufacturing method is disclosed, which includes forming a resist film on a substrate, preparing an exposure tool which comprises a projection optical system, preparing a photo mask on which a mask pattern is formed, mounting the substrate and the photo mask on the exposure tool, the substrate having the resist film formed thereon, transferring the mask pattern formed on the photo mask onto the resist film in a state in which a solution including an oxidative agent is filled between the resist film and a final element of a projection optical system to form a latent image of the mask pattern on the resist film, heating the resist film having the latent image formed thereon, and developing the heated resist film.
摘要翻译：公开了一种器件制造方法，其包括在衬底上形成抗蚀剂膜，制备曝光工具，其包括投影光学系统，制备其上形成掩模图案的光掩模，将衬底和光掩模安装在曝光工具，其上形成有抗蚀剂膜的基板，在将包含氧化剂的溶液填充在抗蚀剂膜和投影光学系统的最终元件之间的状态下，将形成在光掩模上的掩模图案转印到抗蚀剂膜上在抗蚀剂膜上形成掩模图案的潜像，加热其上形成有潜像的抗蚀剂膜，并显影加热的抗蚀剂膜。

33. 发明授权

US06841404B2 Method for determining optical constant of antireflective layer, and method for forming resist pattern 失效
标题翻译：用于确定抗反射层的光学常数的方法，以及形成抗蚀剂图案的方法
公开(公告)号：US06841404B2
公开(公告)日：2005-01-11
申请号：US10237735
申请日：2002-09-10
申请人： Daisuke Kawamura , Eishi Shiobara
发明人： Daisuke Kawamura , Eishi Shiobara
IPC分类号： G03F7/11 , G03F7/09 , G03F7/20 , G03F7/26 , H01L21/00 , H01L21/027 , H01L21/66
CPC分类号： G03F7/091
摘要： A method for determining an optical constant of an bottom antireflective layer formed between a resist film and an underlying substrate in an optical lithography process in a process for fabricating a semiconductor device, the resist film having an absorption coefficient α′ of 1.5 μm−1 to 3.0 μm−1 with respect to an exposure wavelength, a base of the absorption coefficient α′ being 10, the method includes expressing an nominal dose due to a variation in thickness of the resist film by the sum of a monotonic increase term and a damped oscillation term, and selecting an optical constant of the bottom antireflective layer so that a minimum value closing to a maximum point indicative of a maximum value on a curve of a variation in the nominal dose on a side that the thickness is larger than that at the maximum point is substantially equal to the maximum value, or so that no maximum point exist on the curve wherein, expressing an exposure wavelength by λ and an extinction coefficient of the resist film by κ, the absorption coefficient α′ is a value having the following relationship with the λ and the κ. α ′ = 4 ⁢ ⁢ π ⁢ ⁢ κ λ ⁢ log 10 ⁡ ( exp )
摘要翻译：在制造半导体器件的方法中，在光刻工艺中确定在抗蚀剂膜和下面的衬底之间形成的底部抗反射层的光学常数的方法，所述抗蚀剂膜的吸收系数α'为1.5μm-1 >3.0μm，相对于曝光波长为3.0μm，吸收系数α'的基数为10，该方法包括由于抗蚀剂膜的厚度变化而产生的标称剂量为单调增加的总和并选择阻尼振荡项，并且选择底部抗反射层的光学常数，使得接近最大值的最小值表示在厚度较大的一侧的标称剂量的变化的曲线上的最大值比最大点处的最大值大致等于最大值，或者使曲线上不存在最大点，其中表示曝光波长λ和消光通过κ而得到的抗蚀膜的系数，吸收系数α'是与λ和κ具有以下关系的值。

34. 发明申请

US20110039214A1 Pattern Forming Method and Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：图案形成方法及制造半导体器件的方法
公开(公告)号：US20110039214A1
公开(公告)日：2011-02-17
申请号：US12857710
申请日：2010-08-17
申请人： Shinichi ITO , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
发明人： Shinichi ITO , Kentaro Matsunaga , Daisuke Kawamura , Yasunobu Onishi
IPC分类号： G03F7/20 , H01L21/308
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
摘要翻译：图案形成方法包括在被处理膜上形成光致抗蚀剂膜，通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜，选择性地进行部分浸渍曝光通过浸渍液将该光致抗蚀剂膜，浸渍液体供给到光致抗蚀剂膜上，在形成保护膜之后，在进行浸渍曝光前，选择性地除去包含浸渍液的残留物质的残留物质，通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域，去除保护膜，以及形成包括光致抗蚀剂膜的图案。

35. 发明申请

US20100257560A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, INFORMATION PROVIDING APPARATUS, INFORMATION PROVIDING METHOD, AND INFORMATION PROCESSING SYSTEM 失效
标题翻译：信息处理装置，信息处理方法，程序，信息提供装置，信息提供方法和信息处理系统
公开(公告)号：US20100257560A1
公开(公告)日：2010-10-07
申请号：US12729757
申请日：2010-03-23
申请人： Kazuhiro Fukuda , Daisuke Kawamura
发明人： Kazuhiro Fukuda , Daisuke Kawamura
IPC分类号： H04N5/445
CPC分类号： H04N7/173 , G06F3/0482 , H04N5/44543 , H04N7/163 , H04N21/4312 , H04N21/4314 , H04N21/44222 , H04N21/4532 , H04N21/4826 , H04N21/6582
摘要： There is provided a TV set including a content-related information control section which transmits the one or plurality of pieces of viewed content identification information to an ECG server and receives, from the ECG server, content-related information related to content having a relationship with respect to viewed content identified by each of the transmitted one or plurality of pieces of viewed content identification information, and a display control section which causes the display section to display an image based on image data included in each of one or a plurality of pieces of content-related information corresponding to content tuning information the input of which is accepted by an input section from among respective pieces of content-related information that the content-related information control section have received.
摘要翻译：提供了一种电视机，包括内容相关信息控制部分，其将一个或多个观看内容识别信息发送到ECG服务器，并从ECG服务器接收与内容有关的内容相关信息对于被发送的一个或多个观看内容识别信息中的每个所识别的内容的观看内容，以及显示控制部分，其使得显示部分基于包括在一个或多个内容相关信息与内容相关信息控制部分已经接收到的各个内容相关信息中的输入部分接受的内容调谐信息相对应。

36. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

37. 发明申请

US20100196828A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100196828A1
公开(公告)日：2010-08-05
申请号：US12698419
申请日：2010-02-02
申请人： Daisuke Kawamura
发明人： Daisuke Kawamura
IPC分类号： G03F7/20
CPC分类号： G03F7/2028 , H01L21/0274
摘要： A film which becomes an outgassing generation source under reduced pressure or in a vacuum is formed on a substrate. A resist film an outgassing generation amount per unit area of which is smaller than the film under reduced pressure or in a vacuum is formed on the film in such a manner that the film is not exposed. The resist film is exposed by using pattern light of extreme ultraviolet (EUV) light. The resist film is developed. The substrate is processed by using the resist film and the film as a mask or by using the film as a mask.
摘要翻译：在减压或真空中成为脱气发生源的膜形成在基板上。在薄膜上以不暴露薄膜的方式，在薄膜上形成抗蚀剂薄膜，其每单位面积的除气量小于薄膜的减压或真空。通过使用极紫外（EUV）光的图案光曝光抗蚀剂膜。抗蚀剂膜被开发出来。通过使用抗蚀剂膜和膜作为掩模或通过使用该膜作为掩模来处理基板。

38. 发明授权

US07685556B2 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method 失效
标题翻译：掩模数据校正方法，光掩模制造方法，计算机程序，光学图像预测方法，抗蚀剂图案形状预测方法和半导体器件制造方法
公开(公告)号：US07685556B2
公开(公告)日：2010-03-23
申请号：US11062437
申请日：2005-02-23
申请人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
发明人： Kazuya Fukuhara , Daisuke Kawamura , Shoji Mimotogi
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F1/70 , G03F7/70133 , G03F7/70433
摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.
摘要翻译：根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。

39. 发明申请

US20070229789A1 Method of manufacturing semiconductor device and liquid immersion lithography system 失效
标题翻译：制造半导体器件和液浸光刻系统的方法
公开(公告)号：US20070229789A1
公开(公告)日：2007-10-04
申请号：US11727498
申请日：2007-03-27
申请人： Daisuke Kawamura
发明人： Daisuke Kawamura
IPC分类号： G03B27/42
CPC分类号： G03F7/70916 , G03F7/70341 , G03F7/70866
摘要： A method of manufacturing a semiconductor device is disclosed. The manufacturing method includes the following steps in a period from a liquid immersion lithography step to a step in which a film structure of at least an edge of a wafer changes from a timing of the liquid immersion lithography step. At least one of a side surface of an edge of the wafer and an upper surface of the edge of the wafer is inspected. On the basis of an inspection result, at least one of the presence/absence of film peeling and the presence/absence of particle adhesion is determined on at least one of the side surface of the edge of the wafer and the upper surface of the edge of the wafer. A predetermined coping process is performed when it is determined that at least one of the film peeling and the particle adhesion has occurred.
摘要翻译：公开了制造半导体器件的方法。该制造方法包括以下步骤：从液浸光刻步骤到至少晶片边缘的膜结构从液浸光刻步骤的定时变化的步骤。检查晶片的边缘的侧表面和晶片的边缘的上表面中的至少一个。基于检查结果，在晶片边缘的侧表面和边缘的上表面中的至少一个上确定膜剥离的存在/不存在和颗粒附着的存在/不存在中的至少一个的晶片。当确定膜剥离和颗粒粘附中的至少一种已经发生时，执行预定的应对过程。

40. 发明申请

US20070042297A1 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US20070042297A1
公开(公告)日：2007-02-22
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

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