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    • 33. 发明授权
    • Negatively chargeable electrophotographic photoreceptor
    • 可负电荷的电子照相感光体
    • US5556729A
    • 1996-09-17
    • US464466
    • 1995-06-05
    • Yuzuru FukudaTsuyoshi OhtaMasato OnoTaketoshi HigashiShigeru Yagi
    • Yuzuru FukudaTsuyoshi OhtaMasato OnoTaketoshi HigashiShigeru Yagi
    • G03G5/08G03G5/082G03G5/147
    • G03G5/08235G03G5/08278
    • An electrophotographic photoreceptor comprising: an electrically conductive substrate, a charge injection blocking layer formed on said electrically conductive substrate, a photoconductive layer comprising a single layer formed on said charge injection blocking layer, said photoconductive layer comprising amorphous silicon containing boron, a positive hole capturing layer formed on said photoconductive layer, said positive hole capturing layer being selected from the group comprising amorphous silicon containing less than 50 ppm boron and amorphous silicon being substantially composed of hydrogen and silicon atoms, and a surface layer formed on said positive hole capturing layer. The boron concentration contained in said photoconductive layer is 0.01-1000 ppm. The surface layer is formed by amorphous silicon nitride, amorphous silicon oxide, amorphous silicon carbide or amorphous carbon as a main body. The charge injection blocking layer has amorphous silicon as a main body and contains a group V element. The electrophotographic photoreceptor is excellent in the dark attenuation, the sensitivity and electrification capacity and does not cause image flow or image fogging on copied images obtained by using the photoreceptor.
    • 一种电子照相感光体,其特征在于,具有:导电性基板,形成在所述导电性基板上的电荷注入阻挡层,含有形成于所述电荷注入阻挡层上的单层的光电导层,所述光电导层含有含硼的非晶硅, 所述空穴捕获层选自含有小于50ppm硼的非晶硅和基本上由氢和硅原子组成的非晶硅,以及形成在所述正空穴捕获层上的表面层。 所述光电导层中含有的硼浓度为0.01〜1000ppm。 表面层由非晶氮化硅,非晶氧化硅,非晶碳化硅或无定形碳作为主体形成。 电荷注入阻挡层以非晶硅为主体,含有V族元素。 电子照相感光体在黑暗衰减,灵敏度和带电能力方面优异,并且不会对通过使用感光体获得的复印图像上的图像流动或图像起雾。
    • 39. 发明授权
    • Resin film manufacturing method, transfer belt, transfer unit, and image forming apparatus
    • 树脂膜制造方法,转印带,转印单元和成像装置
    • US08335460B2
    • 2012-12-18
    • US12553533
    • 2009-09-03
    • Nobuyuki IchizawaMasato OnoTomoko Suzuki
    • Nobuyuki IchizawaMasato OnoTomoko Suzuki
    • G03G15/01
    • B30B5/04G03G15/162G03G2215/1623Y10T428/1352
    • A tubular body 101 includes a layer containing a resin and conductive particles 112, the layer having a first region 111C that is free of conductive particles and lies at the outermost surface, and a second region 111B that has higher conductivity than other regions and lies closer to the innermost surface than the first region. A coating film of a coating liquid containing the conductive particles and resin material is dried, and then an eluting solvent for eluting the resin material from the film is applied thereto. As a result of this, the conductive particles are localized in the coating film at the side coated with the eluting solvent. Thereafter, upon drying the eluting solvent, the resin material dissolved in the eluting solvent deposits on the region where the conductive particles are localized, whereby a particle-free resin region free of the conductive particles is formed.
    • 管状体101包括含有树脂的层和导电性粒子112,该层具有不具有导电粒子且位于最外表面的第一区域111C,以及比其他区域更高的导电率的第二区域111B 到最内表面比第一区域。 将含有导电性颗粒和树脂材料的涂布液的涂膜干燥,然后向其上涂布用于从树脂材料中洗脱的洗脱溶剂。 其结果是,导电粒子位于涂布有洗脱溶剂的一侧的涂膜中。 此后,在洗脱溶剂干燥后,溶解在洗脱溶剂中的树脂材料沉积在导电颗粒定位的区域上,由此形成不含导电颗粒的无颗粒树脂区域。
    • 40. 发明授权
    • Multiphase voltage regulators and methods for voltage regulation
    • 多相电压调节器和电压调节方法
    • US07898233B2
    • 2011-03-01
    • US12101665
    • 2008-04-11
    • Tetsuo SatoMasato OnoRyotaro Kudo
    • Tetsuo SatoMasato OnoRyotaro Kudo
    • G05F1/40
    • H02M3/1584H02M1/36
    • A multiphase voltage regulator system comprises a microcontroller unit (MCU) including a reference voltage generator, and a timing generator for generating n-phase start timing signals; a load for receiving an output voltage; a comparator comparing the reference voltage and output voltage to generate a comparison result; and at least n points of load (POLs) coupled between the MCU and load for controlling output voltage in response to the n-phase start timing signals and the comparison result. Each POL may include a high-side and low-side transistor; and a D-FlipFlop, the D terminal coupled High, the clock terminal coupled to receive a control signal based on a respective one of the n-phase start timing signals, the Q terminal coupled to drive the high-side transistor, the /Q terminal coupled to drive the low-side transistor, and the reset terminal coupled to receive a reset control signal based on the comparison result.
    • 多相电压调节器系统包括一个包括参考电压发生器的微控制器单元(MCU)和用于产生n相启动定时信号的定时发生器; 用于接收输出电压的负载; 比较器比较参考电压和输出电压以产生比较结果; 以及耦合在MCU和负载之间的至少n个负载点(POL),用于响应于n相开始定时信号和比较结果来控制输出电压。 每个POL可以包括高边和低边晶体管; 和D-FlipFlop,D端耦合高电平,时钟端子被耦合以基于n相开始定时信号中的相应一个接收控制信号,Q端耦合以驱动高侧晶体管,/ Q 端子耦合以驱动低侧晶体管,并且复位端子被耦合以基于比较结果接收复位控制信号。