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31. 发明申请

US20100190284A1 METHOD OF FABRICATING NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE 失效
标题翻译：制备基于氮化物的半导体光学器件的方法
公开(公告)号：US20100190284A1
公开(公告)日：2010-07-29
申请号：US12692154
申请日：2010-01-22
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Masaki UENO , Takashi KYONO , Katsushi AKITA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Masaki UENO , Takashi KYONO , Katsushi AKITA
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075
摘要： In the method of fabricating a nitride-based semiconductor optical device by metal-organic chemical vapor deposition, a barrier layer is grown at a first temperature while supplying a gallium source to a reactor. The barrier layer comprises a first gallium nitride-based semiconductor. After the growth of the barrier layer, a nitrogen material and an indium material are supplied to the reactor without supply of the gallium source to perform a preflow of indium. Immediately after the preflow, a well layer is grown on the barrier layer at a second temperature while supplying an indium source and the gallium source to the reactor. The well layer comprises InGaN, and the second temperature is lower than the first temperature. The gallium source and the indium source are supplied to the reactor during plural first periods of the step of growing the well layer to grow plural InGaN layers, respectively. The indium material is supplied to the reactor without supply of the gallium source during the second period of the step of growing the well layer. The second period is between the first periods. The well layer comprises the plural InGaN layers.
摘要翻译：在通过金属有机化学气相沉积制造氮化物基半导体光学器件的方法中，在将镓源供应到反应器的同时，在第一温度下生长阻挡层。阻挡层包括第一氮化镓基半导体。在阻挡层生长之后，向反应器供给氮材料和铟材料，而不提供镓源以执行铟的预流。在预流之后立即在第二温度下在阻挡层上生长阱层，同时向反应器供应铟源和镓源。阱层包括InGaN，第二温度低于第一温度。在生长阱层的步骤的多个第一阶段期间，分别将镓源和铟源供应到反应器，以生长多个InGaN层。在生长阱层的第二阶段期间，铟材料被供应到反应器而不供应镓源。第二个时期是在第一个时期之间。阱层包括多个InGaN层。

32. 发明申请

US20110210378A1 HIGH ELECTRON MOBILITY TRANSISTOR, EPITAXIAL WAFER, AND METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR 失效
标题翻译：高电子移动晶体管，外延晶体管和制造高电子移动晶体管的方法
公开(公告)号：US20110210378A1
公开(公告)日：2011-09-01
申请号：US12846311
申请日：2010-07-29
申请人： Masaki UENO , Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI
发明人： Masaki UENO , Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI
IPC分类号： H01L29/778 , H01L29/205 , H01L21/338
CPC分类号： H01L29/7781 , H01L29/2003 , H01L29/66462 , H01L29/7783
摘要： A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region.
摘要翻译：高电子迁移率晶体管包括具有III族氮化物区域的独立支撑基底，设置在第一III族氮化物阻挡层上的第一III族氮化物阻挡层，设置在第一III族氮化物阻挡层上的III族氮化物沟道层并与第一III族氮化物阻挡层形成第一异质结，在III族氮化物沟道层上设置栅电极，以在第一异质结上施加电场，在III族氮化物沟道层上的源电极和第一III族氮化物阻挡层，以及在III族氮化物沟道层和第一III族氮化物屏障上的漏电极。 III族氮化物沟道层具有压缩内部应变，并且III族氮化物沟道层的压电场在从支撑基底朝向第一III族氮化物阻挡层的方向上取向。第一异质结沿着具有相对于III族氮化物区域的c轴以40度至85度或140度至180度的范围内倾斜的倾斜角的平面延伸。

33. 发明申请

US20110158277A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND EPITAXIAL SUBSTRATE 审中-公开
标题翻译： III族氮化物半导体激光器件，制备III族氮化物半导体激光器器件的方法和外延衬底
公开(公告)号：US20110158277A1
公开(公告)日：2011-06-30
申请号：US12837847
申请日：2010-07-16
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Nobuhiro SAGA , Masahiro ADACHI , Kazuhide SUMIYOSHI , Shinji TOKUYAMA , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Takamichi SUMITOMO , Nobuhiro SAGA , Masahiro ADACHI , Kazuhide SUMIYOSHI , Shinji TOKUYAMA , Shimpei TAKAGI , Takatoshi IKEGAMI , Masaki UENO , Koji KATAYAMA
IPC分类号： H01S5/343 , H01L21/304 , H01L33/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than −0.5 degrees and not more than +0.5 degrees.
摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。激光器结构包括支撑基底，其包括六边形III族氮化物半导体并且具有半极性主表面，以及设置在半极性主表面上的半导体区域。电极设置在半导体区域上。半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。激光结构包括与由六边形III族氮化物半导体的m轴和垂直于半极性主表面的轴定义的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。六边形III族氮化物半导体的法线和c轴之间的角度ALPHA在不小于45度且不超过80度的范围内或在不小于100度且不超过135度的范围内度。激光器结构包括在半极性主表面上方延伸的激光波导，并且激光波导沿着从第一和第二断裂面的一个引导到另一个的波导矢量的方向延伸。指示六边形III族氮化物半导体的c轴方向的c轴向量包括平行于半极性主表面的投影分量和平行于法线轴的垂直分量。波导矢量和投射分量之间的角度差在不小于-0.5度且不超过+0.5度的范围内。

34. 发明申请

US20130051417A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译： III类氮化物半导体发光器件
公开(公告)号：US20130051417A1
公开(公告)日：2013-02-28
申请号：US13453743
申请日：2012-04-23
申请人： Takamichi SUMITOMO , Takashi KYONO , Masaki UENO , Yusuke YOSHIZUMI , Yohei ENYA , Masahiro ADACHI , Shimpei TAKAGI , Katsunori YANASHIMA
发明人： Takamichi SUMITOMO , Takashi KYONO , Masaki UENO , Yusuke YOSHIZUMI , Yohei ENYA , Masahiro ADACHI , Shimpei TAKAGI , Katsunori YANASHIMA
IPC分类号： H01S5/30
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/22 , H01S5/3202 , H01S5/34333
摘要： A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，绝缘层，电极和电介质多层。激光器结构包括在六方晶III族氮化物半导体支撑基体的半极性主表面上的半导体区域。电介质多层在激光腔的第一和第二端面上。 III族氮化物的c轴从第一端面到第二端面在波导轴线方向上从主面的法线倾斜角度ALPHA。焊盘电极具有分别设置在半导体区域的第一至第三区域上的第一至第三部分。欧姆电极通过绝缘层的开口与第三区域接触。第一部分具有延伸到第一端面边缘的第一臂。第三部分远离第一端面边缘。

35. 发明申请

US20130009202A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物半导体器件，制备III族氮化物半导体器件的方法
公开(公告)号：US20130009202A1
公开(公告)日：2013-01-10
申请号：US13538513
申请日：2012-06-29
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。第一和第二接触层包括p型氮化镓基半导体。第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。发光层包括氮化镓基半导体。第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。第二接触层的厚度在1〜50nm的范围内。

36. 发明申请

US20120327967A1 GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件，外延衬底，制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120327967A1
公开(公告)日：2012-12-27
申请号：US13480178
申请日：2012-05-24
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/323 , H01L33/32
CPC分类号： H01S5/3201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.
摘要翻译：氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

37. 发明申请

US20120269222A1 NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE 有权
标题翻译：氮化物半导体激光和外延衬底
公开(公告)号：US20120269222A1
公开(公告)日：2012-10-25
申请号：US13366636
申请日：2012-02-06
申请人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/343
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

38. 发明申请

US20110012126A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110012126A1
公开(公告)日：2011-01-20
申请号：US12836090
申请日：2010-07-14
申请人： Takamichi SUMITOMO , Masaki UENO , Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI
发明人： Takamichi SUMITOMO , Masaki UENO , Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI
IPC分类号： H01L33/30 , H01L33/02
CPC分类号： H01L33/16 , B82Y20/00 , H01L33/0075 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0421 , H01S5/3202 , H01S5/343 , H01S5/34333
摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
摘要翻译：目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面和倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

39. 发明申请

US20120269220A1 III-NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III型氮化物半导体激光器件及其制备III-NITRIDE半导体激光器件的方法
公开(公告)号：US20120269220A1
公开(公告)日：2012-10-25
申请号：US13354053
申请日：2012-01-19
申请人： Takashi KYONO , Shimpei TAKAGI , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Yohei ENYA , Masaki UENO , Katsunori YANASHIMA
发明人： Takashi KYONO , Shimpei TAKAGI , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Yohei ENYA , Masaki UENO , Katsunori YANASHIMA
IPC分类号： H01S5/323 , H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/2009 , H01S5/3202
摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.
摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着波导轴在激光装置中。氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。激光器结构包括与波导轴相交的第一和第二断裂面。激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。

40. 发明申请

US20110186860A1 NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS 审中-公开
标题翻译：基于氮化物的半导体发光器件，用于制造基于氮化物的半导体发光器件的方法和发光器件
公开(公告)号：US20110186860A1
公开(公告)日：2011-08-04
申请号：US13085684
申请日：2011-04-13
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Masaki UENO , Takao NAKAMURA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Masaki UENO , Takao NAKAMURA
IPC分类号： H01L33/16 , H01L33/58
CPC分类号： H01L33/22 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device 11 includes a support base 13 and a semiconductor laminate 15. The semiconductor laminate 15 includes an n-type GaN-based semiconductor region 17, an active layer 19, and a p-type GaN-based semiconductor region 21. The n-type GaN-based semiconductor region 17, the active layer 19, and the p-type GaN-based semiconductor region 21 are mounted on a principal surface 13a, and are arranged in the direction of a predetermined axis Ax orthogonal to the principal surface 13a. A rear surface 13b of the support base 13 is inclined with respect to a plane orthogonal to a reference axis extending in the c-axis direction of a hexagonal gallium nitride semiconductor of the support base 13. A vector VC represents the c-axis direction. A surface morphology M of the rear surface 13b has a plurality of protrusions 23 protruding in the direction of a -axis. The direction of the predetermined axis Ax is different from the direction of the reference axis (the direction of the vector VC).
摘要翻译：公开了一种具有优异的光提取效率的氮化物基半导体发光器件。发光器件11包括支撑基底13和半导体层叠体15.半导体层叠体15包括n型GaN基半导体区域17，有源层19和p型GaN基半导体区域21。 n型GaN基半导体区域17，有源层19和p型GaN基半导体区域21安装在主表面13a上，并且沿与主表面正交的预定轴线Ax的方向 13a。支撑基座13的后表面13b相对于与支撑基座13的六方晶系氮化镓半导体的c轴方向延伸的基准轴正交的平面倾斜。矢量VC表示c轴方向。后表面13b的表面形态M具有沿<000-1>轴方向突出的多个突起23。预定轴Ax的方向与参考轴的方向（矢量VC的方向）不同。

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