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31. 发明申请

US20110233500A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING MEMORY CELL HAVING RECTIFYING ELEMENT AND SWITCHING ELEMENT 有权
标题翻译：半导体存储器件，包括具有整流元件和开关元件的存储器单元
公开(公告)号：US20110233500A1
公开(公告)日：2011-09-29
申请号：US12837386
申请日：2010-07-15
申请人： Jun Nishimura , Nobuaki Yasutake , Takeshi Murata
发明人： Jun Nishimura , Nobuaki Yasutake , Takeshi Murata
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C13/0004 , H01L27/2463 , H01L27/2481 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： According to one embodiment, a semiconductor memory device includes a first conductive line, a second conductive line, a rectifying element, a switching element, a first side wall film and a second side wall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The rectifying element is connected between the first and second conductive lines. The switching element is connected in series with the rectifying element between the first and second conductive lines. The first side wall film is formed on a side surface of the rectifying element. The second side wall film is formed on a side surface of at least one of the first and second conductive lines. At least one of a film type and a film thickness of the second side wall film is different from that of the first side wall film.
摘要翻译：根据一个实施例，半导体存储器件包括第一导线，第二导线，整流元件，开关元件，第一侧壁膜和第二侧壁膜。第一导线沿第一方向延伸。第二导线沿与第一方向交叉的第二方向延伸。整流元件连接在第一和第二导线之间。开关元件与第一和第二导线之间的整流元件串联连接。第一侧壁膜形成在整流元件的侧面。第二侧壁膜形成在第一和第二导线中的至少一个的侧表面上。第二侧壁膜的膜型和膜厚中的至少一种与第一侧壁膜的膜厚不同。

32. 发明申请

US20110226622A1 NOVEL CLEAR NATIVE ELECTROPHORESIS METHOD UTILIZING AROMATIC SULFONIC ACID COMPOUND 审中-公开
标题翻译：使用芳香磺酸化合物的新颖清晰的电泳方法
公开(公告)号：US20110226622A1
公开(公告)日：2011-09-22
申请号：US13130995
申请日：2009-12-01
申请人： Tomoya Hino , Takeshi Murata , So Iwata , Toshiyuki Kan
发明人： Tomoya Hino , Takeshi Murata , So Iwata , Toshiyuki Kan
IPC分类号： C07K1/26 , C07C309/49
CPC分类号： C07C309/46 , G01N27/44747
摘要： This invention provides a reagent for protein electrophoresis, an electrophoresis gel or buffer composition containing the reagent, and a protein separation method and an electrophoresis kit using the reagent and the composition.
摘要翻译：本发明提供了一种蛋白质电泳用试剂，含有试剂的电泳凝胶或缓冲组合物，以及蛋白质分离方法以及使用该试剂和组合物的电泳试剂盒。

33. 发明授权

US07745663B2 5-Substituted-2-phenylamino benzamides as MEK inhibitors 有权
标题翻译： 5-取代的2-苯基氨基苯甲酰胺作为MEK抑制剂
公开(公告)号：US07745663B2
公开(公告)日：2010-06-29
申请号：US11658533
申请日：2005-07-26
申请人： Yoshiaki Isshiki , Yasunori Kohchi , Eisaku Mizuguchi , Hitoshi Iikura , Yasuaki Matsubara , Shinji Tsujii , Nobuo Shimma , Masanori Miwa , Satoshi Aida , Masami Kohchi , Takeshi Murata , Kosuke Aso
发明人： Yoshiaki Isshiki , Yasunori Kohchi , Eisaku Mizuguchi , Hitoshi Iikura , Yasuaki Matsubara , Shinji Tsujii , Nobuo Shimma , Masanori Miwa , Satoshi Aida , Masami Kohchi , Takeshi Murata , Kosuke Aso
IPC分类号： C07C239/00 , C07C259/00 , C07C233/00 , C07C235/00 , C07C237/00 , C07C229/00 , C07C251/00 , C07D265/00 , A61K31/535 , A01N37/18 , A61K31/16 , A61K31/165
CPC分类号： C07C259/10 , C07C317/18 , C07C323/12 , C07D207/27 , C07D211/76 , C07D239/10 , C07D261/04 , C07D263/22 , C07D265/02 , C07D265/32 , C07D273/00
摘要： An objective of the present invention is to provide compounds that exhibit strong MEK-inhibiting activity and are stable in vivo and soluble in water, which can be used as preventive or therapeutic agents for proliferative diseases.The compounds of the present invention and pharmaceutically acceptable salts thereof are represented by the following formula (1): [where R1, R2, R3, R4, and X are the same as defined in the present patent application].
摘要翻译：本发明的目的是提供具有强MEK抑制活性并且在体内稳定且可溶于水的化合物，其可用作增殖性疾病的预防或治疗剂。本发明的化合物及其药学上可接受的盐由下式（1）表示：[其中R1，R2，R3，R4和X与本专利申请中定义相同]。

34. 发明申请

US20080179677A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20080179677A1
公开(公告)日：2008-07-31
申请号：US12022382
申请日：2008-01-30
申请人： Takeshi Murata , Makoto Mizukami , Fumitaka Arai
发明人： Takeshi Murata , Makoto Mizukami , Fumitaka Arai
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L27/105 , H01L21/84 , H01L27/11526 , H01L27/11529 , H01L27/1203
摘要： Semiconductor storage devices in which a plurality of semiconductor element devices having different functions are disposed in the appropriate region of the partial SOI substrate and the interface between each gate insulator and each gate electrode is formed to be the same level, and manufacturing methods thereof are disclosed. According to one aspect, there is provided a semiconductor storage device includes a first semiconductor region provided in a semiconductor substrate including a buried insulator having opening portions, a second semiconductor region without including buried insulator, a plurality of first semiconductor element devices disposed above the buried insulator, a plurality of second semiconductor element devices each disposed in a region including a region above the opening portion of the buried insulator, and a plurality of third semiconductor element devices disposed in the second semiconductor region.
摘要翻译：其中具有不同功能的多个半导体元件器件设置在部分SOI衬底的适当区域中并且每个栅绝缘体和每个栅电极之间的界面形成为相同水平的半导体存储器件，并且其制造方法被公开。根据一个方面，提供一种半导体存储装置，包括设置在包括具有开口部分的埋入式绝缘体的半导体衬底中的第一半导体区域，不包括埋入绝缘体的第二半导体区域，设置在掩埋层上方的多个第一半导体元件器件绝缘体，多个第二半导体元件器件，每个第二半导体元件器件设置在包括所述埋入绝缘体的开口部分上方的区域的区域中，以及设置在所述第二半导体区域中的多个第三半导体元件器件。

35. 发明授权

US07378446B2 Compound having anti-HCV activity and process for producing the same 有权
标题翻译：具有抗HCV活性的化合物及其制备方法
公开(公告)号：US07378446B2
公开(公告)日：2008-05-27
申请号：US10563089
申请日：2004-07-09
申请人： Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki , Takeshi Murata , Fumio Watanabe , Hiroshi Fukuda , Susumu Komiyama , Tadakatsu Hayase
发明人： Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki , Takeshi Murata , Fumio Watanabe , Hiroshi Fukuda , Susumu Komiyama , Tadakatsu Hayase
IPC分类号： A61K31/194 , A61K31/381 , A61K31/4192 , A61K31/4406 , A61K31/4412 , A61K31/45 , A61K31/495 , A61K31/505 , A61K31/513 , A61K31/5375 , C07D249/06 , C07D333/20 , C07D211/46 , C07D213/46 , C07D213/64 , C07D213/65 , C07D213/38 , C07D241/04 , C07D239/26 , C07D265/30 , C07C229/36 , C07C247/16
CPC分类号： A61K31/195 , A61K31/216 , A61K31/405 , C07C235/76
摘要： The object of the present invention is to provide a compound useful for the prevention and treatment of viral infectious diseases, and particularly liver diseases caused by HCV infection due to its having a high degree of replication inhibitory activity against HCV, its production method, an intermediate compound useful for its production and a pharmaceutical composition containing these compounds, and the present invention relates to a compound represented by the formula (I): (wherein A represents —(CH2)n—, etc.; B represents —(C═O)—, etc.; D represents —(CH2)m—R′, etc.; E represents a hydrogen atom, etc.; G represents —(CH2)p-J, etc.; bond Q represents a single bond or double bond; and R1, R2 and R3 may be the same or different and each represent a hydrogen atom, etc.), a prodrug thereof or a pharmaceutically acceptable salt thereof.
摘要翻译：本发明的目的是提供一种可用于预防和治疗病毒感染性疾病的化合物，特别是由于其对HCV具有高复制抑制活性的HCV感染引起的肝脏疾病，其制备方法，中间体可用于其生产的化合物和含有这些化合物的药物组合物，本发明涉及由式（I）表示的化合物：其中A表示 - （CH 2 2）n < /等等; B表示 - （CO） - 等; D表示 - （CH 2 2）m -R 1等; E表示氢原子等; G表示 - （CH 2 CH 2）n -J等;键Q表示单键或双键; R' R 1，R 2和R 3可以相同或不同，各自表示氢原子等），其前药或药学上可接受的盐其中。

36. 发明申请

US20060194870A1 Compound having anti-hcv activity and process for producing the same 有权
标题翻译：具有抗hcv活性的化合物及其制备方法
公开(公告)号：US20060194870A1
公开(公告)日：2006-08-31
申请号：US10563089
申请日：2004-07-09
申请人： Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki , Takeshi Murata , Fumio Watanabe , Hiroshi Fukuda , Susumu Komiyama , Tadakatsu Hayase
发明人： Masayuki Sudoh , Takuo Tsukuda , Miyako Masubuchi , Kenichi Kawasaki , Takeshi Murata , Fumio Watanabe , Hiroshi Fukuda , Susumu Komiyama , Tadakatsu Hayase
IPC分类号： A61K31/385 , A61K31/335
CPC分类号： A61K31/195 , A61K31/216 , A61K31/405 , C07C235/76
摘要： The object of the present invention is to provide a compound useful for the prevention and treatment of viral infectious diseases, and particularly liver diseases caused by HCV infection due to its having a high degree of replication inhibitory activity against HCV, its production method, an intermediate compound useful for its production and a pharmaceutical composition containing these compounds, and the present invention relates to a compound represented by the formula (I): (wherein A represents —(CH2)n—, etc.; B represents —(C═O)—, etc.; D represents —(CH2)m—R′, etc.; E represents a hydrogen atom, etc.; G represents —(CH2)p-J, etc.; bond Q represents a single bond or double bond; and R1, R2 and R3 may be the same or different and each represent a hydrogen atom, etc.), a prodrug thereof or a pharmaceutically acceptable salt thereof.
摘要翻译：本发明的目的是提供一种可用于预防和治疗病毒感染性疾病的化合物，特别是由于其对HCV具有高复制抑制活性的HCV感染引起的肝脏疾病，其制备方法，中间体可用于其生产的化合物和含有这些化合物的药物组合物，本发明涉及由式（I）表示的化合物：其中A表示 - （CH 2 2）n < /等等; B表示 - （CO） - 等; D表示 - （CH 2 2）m -R 1等; E表示氢原子等; G表示 - （CH 2 CH 2）n -J等;键Q表示单键或双键; R' R 1，R 2和R 3可以相同或不同，各自表示氢原子等），其前药或药学上可接受的盐其中。

37. 发明授权

US06825194B2 Hexacyclic compounds 失效
标题翻译：六环化合物
公开(公告)号：US06825194B2
公开(公告)日：2004-11-30
申请号：US10304672
申请日：2002-11-26
申请人： Takeshi Murata , Satoshi Niizuma , Nobuo Shimma , Hitomi Suda , Masao Tsukazaki
发明人： Takeshi Murata , Satoshi Niizuma , Nobuo Shimma , Hitomi Suda , Masao Tsukazaki
IPC分类号： C07D49122
CPC分类号： C07D491/22
摘要： The present invention relates to hexacyclic compound of the formula [1], wherein Z, R3 and R4 are as identified therein, and pharmaceutically acceptable salts thereof. These compounds are useful in the treatment of cell proliferative disorders.
摘要翻译：本发明涉及式[1]的六环化合物及其药学上可接受的盐，其中Z，R 3和R 4如本文所述。这些化合物可用于治疗细胞增殖性疾病。

38. 发明授权

US5585687A Piezolelectric oscillator 失效
标题翻译：压电振荡器
公开(公告)号：US5585687A
公开(公告)日：1996-12-17
申请号：US391589
申请日：1995-02-21
申请人： Hisao Wakabayashi , Toshinori Ide , Toshihide Ooi , Takeshi Murata , Shinji Nakayama , Toshimitsu Aruga
发明人： Hisao Wakabayashi , Toshinori Ide , Toshihide Ooi , Takeshi Murata , Shinji Nakayama , Toshimitsu Aruga
IPC分类号： H03H3/02 , H03H9/05 , H03H9/10 , H03H9/19 , H01L41/08
CPC分类号： H03H9/19 , H03H9/1014 , H03H9/1021
摘要： A piezoelectric oscillator comprises a piezoelectric oscillating reed, an insulating substrate for retaining the piezoelectric oscillating reed, and a cap fixed onto the top surface of the insulating substrate for enclosing the piezoelectric oscillating reed. Four connecting electrodes are formed on the top surface of the insulating substrate for electrical connection to the oscillating reed, which are divided into two groups. Each group includes two connecting electrodes which are connected to each other by metal interconnects. The insulating substrate is rectangular, and two connecting electrodes, each of which belong to one group, are located along the shorter sides of the insulating substrate. On the bottom surface of the insulating substrate, at least two external electrodes are formed, to which metal interconnects for each group are connected through the side surface of the insulating substrate.
摘要翻译：压电振荡器包括压电振荡簧片，用于保持压电振荡簧片的绝缘衬底和固定在绝缘衬底的顶表面上以封闭压电振荡簧片的帽。四个连接电极形成在绝缘基板的顶表面上，用于与振荡簧片电连接，分为两组。每个组包括通过金属互连彼此连接的两个连接电极。绝缘基板是矩形的，并且每个属于一组的两个连接电极沿着绝缘基板的较短边设置。在绝缘基板的底表面上，形成至少两个外部电极，每组的金属互连通过绝缘基板的侧表面连接到该外部电极。

39. 发明授权

US08710766B2 LED driving circuit, LED illumination appliance, LED illuminator, and LED illumination system 有权
标题翻译： LED驱动电路，LED照明器具，LED照明器和LED照明系统
公开(公告)号：US08710766B2
公开(公告)日：2014-04-29
申请号：US13406214
申请日：2012-02-27
申请人： Atsushi Kanamori , Hirohisa Warita , Takeshi Murata
发明人： Atsushi Kanamori , Hirohisa Warita , Takeshi Murata
IPC分类号： H05B37/00
CPC分类号： H05B33/0815 , H05B33/0827 , Y02B20/383
摘要： Provided is an LED driving circuit (4), including: an impedance detecting section (7) for detecting an impedance value of a phase-control type dimmer (2); and an impedance adjusting section (6) for adjusting an impedance of the LED driving circuit (4) based on the impedance value detected by the impedance detecting section (7).
摘要翻译：提供一种LED驱动电路（4），包括：阻抗检测部（7），用于检测相位控制型调光器（2）的阻抗值; 以及阻抗调整部（6），用于根据由阻抗检测部（7）检测的阻抗值来调整LED驱动电路（4）的阻抗。

40. 发明授权

US08497582B2 Nonvolatile semiconductor memory having a word line bent towards a select gate line side 有权
公开(公告)号：US08497582B2
公开(公告)日：2013-07-30
申请号：US13427061
申请日：2012-03-22
申请人： Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
发明人： Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
IPC分类号： H01L29/41 , H01L27/115
CPC分类号： H01L27/11519 , G11C5/06 , G11C5/063 , G11C16/04 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.

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