会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 33. 发明授权
    • Variable capacity type viscous heater
    • 可变容量型粘性加热器
    • US5752499A
    • 1998-05-19
    • US836870
    • 1997-05-06
    • Hidefumi MoriTakashi BanKiyoshi YagiKunifumi Goto
    • Hidefumi MoriTakashi BanKiyoshi YagiKunifumi Goto
    • B60H1/22B60H1/08F01P3/20F24J3/00F24C9/00
    • F24J3/003F01P3/20F01P2060/18
    • A variable capacity type viscous heater is provided which can carry out the capacity control reliably, and which can inhibit the endurable heat-generating efficiency of a viscous fluid from deteriorating even after a long period of service. For instance, its rear housing 6 is provided with a control chamber 9 which is communicated with a central region of a heat-generating chamber 7, and which has an internal volume capable of expanding and contracting. When a rotor 14 is kept rotated, a silicone oil held, in the heat-generating chamber 7, expands the internal volume of the control chamber 9 by the Weissenberg effect in the capacity reduction. As a result, the heating is relieved, because the silicone oil, held in the heat-generating chamber 7, is collected into the control chamber 9.
    • PCT No.PCT / JP96 / 02527 Sec。 371日期:1997年5月6日 102(e)日期1997年5月6日PCT提交1996年9月5日PCT公布。 公开号WO97 / 10112 PCT 日期1997年3月20日提供了一种可变容量型粘性加热器,其可以可靠地进行容量控制,并且即使在长时间使用后也可以抑制粘性流体的耐久性发热效率劣化。 例如,其后壳体6设置有与发热室7的中心区域连通并具有能够膨胀和收缩的内部容积的控制室9。 当转子14保持旋转时,保持在发热室7中的硅油在容量降低中通过Weissenberg效应使控制室9的内部容积膨胀。 结果,由于保持在发热室7中的硅油被收集到控制室9中,所以加热被释放。
    • 34. 发明授权
    • Viscous fluid type heat generator with means for maintaining optimum
lubricating condition of a bearing
    • 粘性流体式发热器,用于保持轴承最佳的润滑状态
    • US5727510A
    • 1998-03-17
    • US705659
    • 1996-08-30
    • Takashi BanHidefumi MoriKiyoshi Yagi
    • Takashi BanHidefumi MoriKiyoshi Yagi
    • B60H1/22B60H1/03F24J3/00F22B3/06
    • F24J3/003B60H2001/146F01P2060/18
    • A viscous fluid type heat generator adapted for being incorporated in a heating system has front and rear housings in which a heat generating chamber containing therein a viscous fluid and a heat receiving chamber permitting a heat exchanging liquid to flow therethrough. The heat generator also has a drive shaft rotatably supported by an anti-friction bearing unit and having mounted thereon a rotor element rotating in the heat generating chamber to apply a shearing action by which the viscous fluid generates heat absorbed by the heat exchanging liquid flowing in the heat receiving chamber. The heat generator has an intermediate substance unit arranged between the heat generating chamber and the anti-friction bearing unit so as to provide a thermal isolation therebetween. The intermediate substance unit may be a shaft sealing unit, a closed vacant chamber or a combination of the shaft sealing unit and the closed vacant chamber.
    • 适用于加热系统的粘性流体式热发生器具有前后壳体,其中容纳有粘性流体的发热室和允许热交换液体流过的热接收室。 热发生器还具有可旋转地由抗摩擦轴承单元支撑并且在其上安装有转子元件的驱动轴,该转子元件在发热室中旋转,以施加剪切动作,粘性流体产生被流过的热交换液体吸收的热量 热接收室。 发热体具有布置在发热室和抗摩擦轴承单元之间的中间物质单元,以便在它们之间提供热隔离。 中间物质单元可以是轴密封单元,闭合的空腔或者轴密封单元和封闭的空腔的组合。
    • 40. 发明授权
    • Method for manufacturing crystalline film
    • 制造结晶膜的方法
    • US4534820A
    • 1985-08-13
    • US434536
    • 1982-10-15
    • Hidefumi MoriMasahiro Ikeda
    • Hidefumi MoriMasahiro Ikeda
    • C30B11/12C30B25/04C30B3/00
    • C30B11/12Y10S438/929
    • A thin film of a metal of which eutectic or compound is produced together with a semiconductor which is to be grown in its crystalline form is deposited on an amorphous (quartz glass) substrate. The thin film is patterned with a periodic pattern of a polygon having cross angles of multiples of about 60.degree., then the resulting substrate is heated at a temperature higher than the eutectic temperature of the metal and the semiconductor, and the semiconductor is deposited on the thin film under such heating condition, so that a crystalline film of the semiconductor is precipitated on the substrate. Such crystalline film is grown on a planar substrate at a low temperature of about eutectic temperature.
    • 与非晶体(石英玻璃)基板一起沉积与共晶或化合物一起生成的半导体将以其结晶形式生长的金属的薄膜。 用具有约60°的交叉角的多边形的周期性图案对薄膜进行图案化,然后将所得到的衬底在比金属和半导体的共晶温度高的温度下加热,并将半导体沉积在 在这样的加热条件下形成薄膜,使得半导体的结晶膜在基板上析出。 这种结晶膜在约共晶温度的低温下在平面基板上生长。