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    • 37. 发明授权
    • Action history search device
    • 行动历史搜索装置
    • US08600918B2
    • 2013-12-03
    • US13233424
    • 2011-09-15
    • Hisao SetoguchiYuzo OkamotoKenta ChoTakahiro Kawamura
    • Hisao SetoguchiYuzo OkamotoKenta ChoTakahiro Kawamura
    • G06F15/18G06F17/00G06N99/00
    • G06N99/005G06F17/30528
    • According to one embodiment, an action history search device receives an inquiry from a user and outputs a inquiry time and a target of inquiry, decides a range for searching action history information representing history of the user's action together with a time of the user's action using the target of inquiry, and calculates an elapsed time from the time of the user's action within the range to the inquiry time. The device judges using the elapsed time and a narrowing-down model a probability on each response candidate to the inquiry based on the history of the action within the range. The narrowing-down model is used for judging according to the elapsed time the probability that the response candidate to the inquiry obtained from the history of the action is the user's desired response. The device outputs the response candidate according to the probability.
    • 根据一个实施例,动作历史搜索装置从用户接收询问并输出查询时间和查询目标,决定用于搜索表示用户动作历史的动作历史信息的范围以及用户动作的时间 查询的目标,并且计算从用户在该范围内的动作时间到查询时间的经过时间。 该装置根据该范围内的动作的历史,将每个应答候选者的经过时间和缩小模型的概率判定为查询。 缩小模型用于根据经过时间来判断从动作历史获得的查询的响应候选者是用户期望的响应的概率。 设备根据概率输出响应候选。
    • 38. 发明授权
    • Apparatus, method and program product for presenting next search keyword
    • 用于呈现下一个搜索关键词的装置,方法和程序产品
    • US08229949B2
    • 2012-07-24
    • US12437584
    • 2009-05-08
    • Tomohiro YamasakiTakahiro Kawamura
    • Tomohiro YamasakiTakahiro Kawamura
    • G06F17/30
    • G06F17/30646G06F17/3064
    • Described is a next search keyword presentation apparatus, method and program for the presentation of the next recommended search keyword for use in conjunction with the search results. There is provided an apparatus of presenting relevant next search keywords, including an input unit for inputting a search keyword. A search control unit sends search keywords to a search system and receives search results which are displayed as documents on a display unit. A text body extraction unit extracts the text body and an analysis unit carries out a semantic attribute analysis of words contained within the text body. The search keywords are stored as user history data which is used with semantic attributes of each word to create document representative information. A cluster representative keyword extraction unit clusters document characteristic information and extracts cluster representative keywords which are displayed as search keyword candidates, providing recommended keywords based on browsing history.
    • 描述了下一个搜索关键词呈现装置,方法和程序,用于呈现与搜索结果一起使用的下一个推荐搜索关键字。 提供了一种呈现相关的下一个搜索关键字的装置,包括用于输入搜索关键字的输入单元。 搜索控制单元将搜索关键字发送到搜索系统,并将显示为文档的搜索结果接收到显示单元上。 文本体提取单元提取文本体,并且分析单元对包含在文本体内的单词执行语义属性分析。 搜索关键字被存储为与每个单词的语义属性一起使用以创建文档代表信息的用户历史数据。 集群代表关键词提取单元聚集文档特征信息并提取作为搜索关键字候选显示的集群代表性关键字,根据浏览历史提供推荐关键字。
    • 39. 发明申请
    • SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    • 半导体器件和显示器件
    • US20110073860A1
    • 2011-03-31
    • US12886983
    • 2010-09-21
    • Michihiro KannoTakahiro Kawamura
    • Michihiro KannoTakahiro Kawamura
    • H01L29/786H01L21/336
    • H01L29/78609H01L29/41733H01L29/66765H01L29/78696
    • A thin film transistor comprising an insulating film, a gate electrode embedded in a superficial portion of the insulating film, a gate insulating film on the gate electrode and the insulating film, a semiconductor film on the gate insulating film, a channel protection film on a portion of the semiconductor film with end surfaces which have a forward tapered slope, a first electrode on the semiconductor film which mounts onto one tapered side of the channel protection film, and a second electrode on the semiconductor film which mounts onto the other tapered side of the channel protection film, where an edge of the gate electrode closest to the first electrode is offset towards the second electrode from the point where the first electrode abuts the semiconductor film.
    • 一种薄膜晶体管,包括绝缘膜,嵌入在所述绝缘膜的表面部分中的栅极电极,所述栅电极上的栅极绝缘膜和所述绝缘膜,所述栅极绝缘膜上的半导体膜, 半导体膜的具有正锥形斜面的端面的半导体膜的半导体膜上的第一电极,安装在沟道保护膜的一个锥形侧的半导体膜上的第一电极和安装在沟道保护膜的另一个锥形侧上的第二电极 沟道保护膜,其中最靠近第一电极的栅电极的边缘从第一电极邻接半导体膜的点向第二电极偏移。
    • 40. 发明授权
    • Trench-gate semiconductor device and fabrication method thereof
    • 沟槽栅半导体器件及其制造方法
    • US07015543B2
    • 2006-03-21
    • US10363543
    • 2002-07-04
    • Takahiro KawamuraRyosuke Nakamura
    • Takahiro KawamuraRyosuke Nakamura
    • H01L29/76H01L21/336
    • H01L27/10876H01L29/66621H01L29/7834
    • A trench gate semiconductor device, which can improve the difficulty of channel inversion to thereby improve the switching characteristics as maintaining the effect of suppression of short-channel effects and the high dielectric voltage characteristic between the gate and the drain. The trench gate semiconductor device includes a gate electrode (18) buried in a trench (14) formed in an Si substrate (12) through a gate insulating film (16), and a source/drain diffusion layer (20) formed in a surface region of the Si substrate (12) on the opposite sides of the trench (14). In this trench gate semiconductor device, the corner portions (14a) and (14b) formed by the side walls and the bottom wall of the trench (14) are rounded so as to form concave surfaces concaved inward of the trench (14).
    • 一种沟槽栅极半导体器件,其可以提高沟道反转的难度,从而提高开关特性,从而保持抑制短沟道效应的效果和栅极和漏极之间的高介电电压特性。 沟槽栅极半导体器件包括通过栅极绝缘膜(16)掩埋在形成在Si衬底(12)中的沟槽(14)中的栅极(18),以及形成在表面上的源极/漏极扩散层(20) 在所述沟槽(14)的相对侧上的所述Si衬底(12)的区域。 在这种沟槽栅极半导体器件中,由侧壁和沟槽(14)的底壁形成的角部(14a)和(14b)被倒圆,以形成在沟槽(14)内部凹陷的凹面, 。