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31. 发明申请

US20070077005A1 Optical waveguide having curved reflecting mirror surface and method of manufacturing the same 有权
公开(公告)号：US20070077005A1
公开(公告)日：2007-04-05
申请号：US11285621
申请日：2005-11-22
申请人： Keum Jeon , Min Lee , Sung Kang , Yong Kim , In Park
发明人： Keum Jeon , Min Lee , Sung Kang , Yong Kim , In Park
IPC分类号： G02B6/42
CPC分类号： G02B6/12004 , G02B6/12002 , G02B6/42 , G02B6/4214 , G02B2006/12104
摘要： The present invention relates to an optical waveguide having a curved reflecting mirror surface for optical coupling and a method of manufacturing it. The method of manufacturing an optical waveguide includes the steps of coating a transparent glass substrate with a photosensitive material; radiating ultraviolet rays onto the photosensitive material through a mask in which the shape of the optical waveguide and partition blocks formed beside ends of the optical waveguide are patterned; manufacturing a photoresist stamp by developing patterns onto which the ultraviolet ray has been radiated through the mask; forming a PolyDiMethylSiloxane (PDMS) mold by coating the photo stamp with PDMS, and forming a core; forming the optical waveguide, in which the partition blocks are formed beside the ends thereof, using the PDMS mold; and dropping liquid polymer between the partition blocks formed beside the ends of the optical waveguide using an inkjet header and hardening it. This structure and manufacturing method have advantage in that optical waveguides having variously shaped reflecting mirror surfaces are simply and economically manufactured.

32. 发明申请

US20070023749A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20070023749A1
公开(公告)日：2007-02-01
申请号：US11474971
申请日：2006-06-27
申请人： In Hwang , Hyeon Choi , Min Lee , Dong Lee , Kong Kim , Jae Bae , Dae Lee , Jung Kim
发明人： In Hwang , Hyeon Choi , Min Lee , Dong Lee , Kong Kim , Jae Bae , Dae Lee , Jung Kim
IPC分类号： H01L29/08
CPC分类号： H01L51/004 , B82Y10/00 , B82Y30/00 , C08G61/04 , C08G61/124 , C08G61/126 , C09K11/06 , C09K2211/1011 , C09K2211/1044 , H01L51/0035 , H01L51/0036 , H01L51/0053 , H01L51/0071 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： The present invention relates to an organic thin film transistor which includes an organic layer comprising an organic compound facilitating the ohmic contact between a semi-conducting layer and electrodes and serving as the semi-conducting layer. The organic thin film transistor according to the present invention has excellent electric contact between the semiconductor layer and the source electrode/drain electrode, and thus can be widely used as components for electric/electronic devices. As a result, as the materials for the source electrode or the drain electrode in the organic thin film transistor, materials which are less expensive and excellent in processibility though they have a low work function as the materials can be used.
摘要翻译：本发明涉及一种有机薄膜晶体管，其包括有机层，该有机层包含促进半导电层与电极之间的欧姆接触并用作半导体层的有机化合物。根据本发明的有机薄膜晶体管在半导体层和源极/漏电极之间具有优异的电接触，因此可以广泛用作电气/电子设备的部件。结果，作为有机薄膜晶体管中的源电极或漏电极的材料，虽然可以使用成本低廉且加工性优异的材料，尽管它们作为材料具有低功函数。

33. 发明申请

US20070023696A1 Nonuniform ion implantation apparatus and method using a wide beam 有权
标题翻译：非均匀离子注入装置和使用宽光束的方法
公开(公告)号：US20070023696A1
公开(公告)日：2007-02-01
申请号：US11315776
申请日：2005-12-21
申请人： Min Lee
发明人： Min Lee
IPC分类号： H01J37/08
CPC分类号： H01J37/3172 , H01J37/302 , H01J2237/20228 , H01J2237/3171 , H01L21/26513
摘要： A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit for vertically reciprocating the wafer while the wide ion beam generated by the wide ion beam generator is irradiated on the wafer. At least one of the wide ion beams has a dose different from that of at least another wide ion beam.
摘要翻译：不均匀离子注入装置包括宽离子束发生器，用于产生宽离子束，该宽离子束包括在分割晶片的多个部分中的至少两个部分上照射的多个宽离子束;以及用于垂直往复运动的晶片驱动单元而宽的离子束发生器产生的宽离子束被照射在晶片上。至少一个宽离子束的剂量与至少另一个宽离子束的剂量不同。

34. 发明申请

US20060262265A1 Liquid crystal display panel and method of fabricating thereof 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US20060262265A1
公开(公告)日：2006-11-23
申请号：US11304534
申请日：2005-12-16
申请人： Min Lee
发明人： Min Lee
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/1339 , G02F2001/133388
摘要： A liquid crystal display panel and a fabricating method thereof for preventing a generation of stains caused by a cell gap difference between an active area and an outside area are disclosed. In the liquid crystal display panel, an adhesive is placed between an upper substrate and a lower substrate that are closed in such a manner as to join an upper substrate from a lower substrate. A liquid crystal layer is provided at a closed area defined by the adhesive by a dropping system. A first pattern spacer is positioned at an active area between the upper substrate and the lower substrate. A second pattern spacer is provided such that an outside area thereof enclosing said active area has a different arrangement density from the first pattern spacer and is provided at the same plane as the first pattern spacer.
摘要翻译：公开了一种液晶显示面板及其制造方法，用于防止由有源区域和外部区域之间的单元间隙差引起的污渍的产生。在液晶显示面板中，粘合剂被放置在上基板和下基板之间，以从下基板接合上基板的方式封闭。在由粘合剂由滴落系统限定的封闭区域处设置液晶层。第一图案间隔物位于上基板和下基板之间的有源区域。提供第二图案间隔件，使得封闭所述有源区域的外部区域具有与第一图案间隔物不同的排列密度，并且设置在与第一图案间隔物相同的平面处。

35. 发明申请

US20060151839A1 Gate structure of semiconductor device and method for forming the same 失效
标题翻译：半导体器件的栅极结构及其形成方法
公开(公告)号：US20060151839A1
公开(公告)日：2006-07-13
申请号：US11268846
申请日：2005-11-08
申请人： Young Kim , Jun Chang , Min Lee , Yong Eun
发明人： Young Kim , Jun Chang , Min Lee , Yong Eun
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L27/10876 , H01L21/2815 , H01L29/66636
摘要： Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a field oxide film, forming a thermal oxide film on a side of the first gate conductive film, etching the silicon substrate exposed between the plurality of gates to a predetermined depth to form a plurality of trenches, forming a second gate oxide film on the interior wall of the trenches, and forming a second gate conductive film in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film, and the thermal oxide film.
摘要翻译：本文公开了一种用于形成半导体器件的栅极结构的方法。该方法包括形成多个栅极，其包括依次层叠在具有场氧化膜的硅基板上的第一栅极电介质膜，第一栅极导电膜和栅极硅化物膜，在第一栅极的一侧形成热氧化膜将暴露在所述多个栅极之间的硅衬底蚀刻到预定深度以形成多个沟槽，在所述沟槽的内壁上形成第二栅极氧化膜，并且形成间隔物形状的第二栅极导电膜第二栅极氧化膜的预定区域，以及第一栅极导电膜，栅极硅化物膜和热氧化物膜的一侧。

36. 发明申请

US20060141716A1 Method for manufacturing a cell transistor of a semiconductor memory device 失效
标题翻译：半导体存储器件的单元晶体管的制造方法
公开(公告)号：US20060141716A1
公开(公告)日：2006-06-29
申请号：US11150026
申请日：2005-06-10
申请人： Kyoung-Bong Rouh , Seung Jin , Min Lee
发明人： Kyoung-Bong Rouh , Seung Jin , Min Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/66575 , H01L27/10873 , H01L29/66492
摘要： Disclosed is a method for manufacturing a cell transistor of a semiconductor memory device. The method comprises the steps of: forming device isolation films and a well on a semiconductor substrate; forming a threshold voltage adjust region by ion-implanting a first conductive impurity dopant into the well of the semiconductor substrate; performing a first thermal annealing on the semiconductor substrate where the threshold voltage adjust region is formed; forming a gate insulating film and gate electrodes on top of the semiconductor substrate between the device isolation films; forming a halo ion implantation region by ion-implanting a first conductive impurity dopant into the semiconductor substrate corresponding to a drain region exposed by the gate electrodes; performing a second thermal annealing on the semiconductor substrate where the halo ion implantation region is formed; and forming source/drain regions by ion-implanting a second conductive impurity dopant into the semiconductor substrate exposed by the gate electrodes. This method can reduce the turn-off leakage current of the cell transistor since the dopant dose of the threshold voltage adjust region can be reduced while maintaining the threshold voltage by increasing the dopant diffusion of the threshold voltage adjust region.
摘要翻译：公开了半导体存储器件的单元晶体管的制造方法。该方法包括以下步骤：在半导体衬底上形成器件隔离膜和阱; 通过将第一导电杂质掺杂剂离子注入到所述半导体衬底的阱中来形成阈值电压调整区域; 在形成有阈值电压调整区域的半导体衬底上进行第一热退火; 在半导体衬底的顶部在器件隔离膜之间形成栅极绝缘膜和栅电极; 通过将第一导电杂质掺杂剂离子注入对应于由栅电极暴露的漏区的半导体衬底中形成晕圈离子注入区; 在形成有所述卤素离子注入区域的所述半导体衬底上进行第二热退火; 以及通过将第二导电杂质掺杂剂离子注入到由所述栅电极暴露的所述半导体衬底中来形成源/漏区。该方法可以减小单元晶体管的截止漏电流，因为阈值电压调整区域的掺杂剂剂量可以通过增加阈值电压调整区域的掺杂剂扩散来维持阈值电压而降低。

37. 发明申请

US20060141690A1 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060141690A1
公开(公告)日：2006-06-29
申请号：US11201843
申请日：2005-08-11
申请人： Seung Jin , Min Lee , Kyoung Rouh
发明人： Seung Jin , Min Lee , Kyoung Rouh
IPC分类号： H01L21/8238 , H01L21/425
CPC分类号： H01L21/28035 , H01L21/26513 , H01L21/823842 , Y10S438/918
摘要： Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped layer for a gate electrode; implanting mixed dopant ions consisting of at least two dopant ions containing 11B ions into the undoped layer, utilizing an ion-implantation mask; and heat-treating the mixed dopant ion-implanted layer.
摘要翻译：提供一种半导体器件的制造方法，包括在半导体衬底上形成器件隔离层; 在其上形成有器件隔离层的半导体衬底的上部形成栅极绝缘层; 形成用于栅电极的未掺杂层; 使用离子注入掩模将包含至少两种含有11+ B离子的掺杂剂离子组成的混合掺杂剂离子注入到未掺杂的层中; 并对混合掺杂剂离子注入层进行热处理。

38. 发明申请

US20060118794A1 Semiconductor light-emitting device and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20060118794A1
公开(公告)日：2006-06-08
申请号：US11154559
申请日：2005-06-17
申请人： Jong Lee , Min Lee , Young Lee
发明人： Jong Lee , Min Lee , Young Lee
IPC分类号： H01L31/12
CPC分类号： H01L33/20 , B82Y20/00 , H01L21/02381 , H01L21/02425 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02603 , H01L21/02664 , H01L33/22 , H01L33/32 , Y10S977/938
摘要： Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and nano-needles grown on the GaN group multi-layer. The nano-needles improve the extraction efficiency of photons.
摘要翻译：提供了具有纳米针的半导体发光装置及其制造方法。所提供的半导体发光器件提高了光子的提取效率，并且包括在GaN基多层上生长的氮化镓（GaN）组多层和纳米针。纳米针提高光子的提取效率。

39. 发明申请

US20050140852A1 Liquid crystal display and fabrication method thereof 有权
标题翻译：液晶显示及其制造方法
公开(公告)号：US20050140852A1
公开(公告)日：2005-06-30
申请号：US10959055
申请日：2004-10-07
申请人： Min Lee
发明人： Min Lee
IPC分类号： G02F1/1339 , G02F1/133 , G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/00
CPC分类号： G02F1/133351 , G02F1/13394
摘要： An LCD (Liquid Crystal Display) includes a first panel having a first resolution; a second panel having a second resolution, the second resolution lower than the first resolution; and a compensation pattern on an array substrate of the second panel for maintaining a cell gap. According to the present invention, though a color filter layer of the second panel having the lower resolution has a lower thickness, a uniform cell gap can be maintained.
摘要翻译：液晶显示器（LCD）包括具有第一分辨率的第一面板; 第二面板具有第二分辨率，第二分辨率低于第一分辨率; 以及在第二面板的阵列基板上的维持单元间隙的补偿图案。根据本发明，尽管具有较低分辨率的第二面板的滤色器层具有较低的厚度，但是可以保持均匀的单元间隙。

40. 发明授权

US09686655B2 Apparatus and method for transmitting signal in communication system 有权
公开(公告)号：US09686655B2
公开(公告)日：2017-06-20
申请号：US13810172
申请日：2011-07-14
申请人： Seong Keun Oh , Min Lee
发明人： Seong Keun Oh , Min Lee
IPC分类号： H04W4/08 , H04B7/0452 , H04B7/06 , H04W72/12
CPC分类号： H04W4/08 , H04B7/0452 , H04B7/0697 , H04W72/121
摘要： Provided are an apparatus and method for grouping multiple user data and transmitting the grouped data in a multiple antenna system. According to the method, a plurality of user groups are configured, and at least one antenna group is assigned to the plurality of user groups. Then, user signals for each user group are combined using at least one user multiplexing method to generate a user group signal, and a plurality of user group signals are combined using at least one group multiplexing method. Then, the combined user group signal is transmitted to a plurality of users belonging to the plurality of user groups using the at least one antenna group.

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