专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2019021683A 半導体パッケージ审中-公开
公开(公告)号：JP2019021683A
公开(公告)日：2019-02-07
申请号：JP2017136506
申请日：2017-07-12
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： WATANABE NAOTAKE , TADA NOBUMITSU , ICHIKURA YUTA , ITO HIROAKI , TAKIMOTO KAZUYASU , HIRATSUKA DAISUKE , OBE TOSHIHARU , KURI YUUJI , SEKIYA HIRONORI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
摘要：【課題】半導体チップに不具合が生じても、被害の拡大を抑制できる半導体パッケージを提供する。【解決手段】半導体パッケージは、半導体チップと、第1金属板と、第2金属板と、第1柱状部材と、封止部材と、を備える。前記半導体チップの第1面には第1電極が設けられ、第2面には第2電極が設けられている。前記第1金属板は、前記半導体チップの前記第1面上に配置され、前記第1電極に接続されている。前記第2金属板は、前記半導体チップの前記第2面上に配置され、前記第2電極に接続されている。前記第1柱状部材は、前記半導体チップの側方において前記第1金属板に固定され、前記第1金属板から前記第2金属板に向かう第1方向に延び、先端が前記第2面よりも前記第1方向側に配置され、前記第2金属板から離隔している。前記封止部材は、前記半導体チップ及び前記第1柱状部材を覆う。【選択図】図1

32. 发明专利

JP2019004023A 半導体ユニット审中-公开
公开(公告)号：JP2019004023A
公开(公告)日：2019-01-10
申请号：JP2017116875
申请日：2017-06-14
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： ITO HIROAKI , ICHIKURA YUTA , WATANABE NAOTAKE , OBE TOSHIHARU , TAKIMOTO KAZUYASU , TADA NOBUMITSU , HIRATSUKA DAISUKE , SEKIYA HIRONORI , KURI YUUJI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
摘要：【課題】安全性が高く、大電流出力が可能な半導体ユニットを提供すること。【解決手段】半導体ユニットは、絶縁樹脂製のケース内に設けられ、第1電極板、第2電極板、半導体チップの積層構造を封止する樹脂と、ケースと積層構造との間における少なくともチップ配置領域に対向する位置で樹脂中に埋め込まれ、ケースよりも破断応力が大きい材料からなる補強板と、を備えている。【選択図】図4

33. 发明专利

JP2011018736A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011018736A
公开(公告)日：2011-01-27
申请号：JP2009161651
申请日：2009-07-08
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , NINOMIYA TAKESHI
IPC分类号： H01L23/34
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving durability while improving heat dissipation performance.SOLUTION: The semiconductor device 1 includes: a radiator 2; a conductor 13 mounted on the radiator 2 and provided with a connection surface 13a; a conductor 14 mounted on the radiator 2 and provided with a connection surface 14a; a semiconductor element 16a provided with a first electrode surface 21 in surface contact with the connection surface 13a of the conductor 13 and an electrode surface 22 in surface contact with the connection surface 14a of the conductor 14, which is the electrode surface 22 formed at a position facing the electrode surface 21; and a sealing member 19 which includes a hardening resin and seals the conductor 13, the conductor 14 and the semiconductor element 16a.
摘要翻译：要解决的问题：提供能够在提高散热性能的同时提高耐久性的半导体器件。解决方案：半导体器件1包括：散热器2; 安装在散热器2上并具有连接表面13a的导体13; 安装在散热器2上并具有连接表面14a的导体14; 设置有与导体13的连接面13a表面接触的第一电极面21和与导体14的连接面14a表面接触的电极面22的半导体元件16a，导体14的连接面14a 面向电极表面21的位置; 以及包括硬化树脂并密封导体13，导体14和半导体元件16a的密封构件19。

34. 发明专利

JP2010016926A Power semiconductor module and semiconductor power conversion device equipped with the same 有权
标题翻译：功率半导体模块和半导体功率转换器件
公开(公告)号：JP2010016926A
公开(公告)日：2010-01-21
申请号：JP2008172413
申请日：2008-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： NINOMIYA TAKESHI , OBE TOSHIHARU , UEDA KAZUHIRO , SHIMIZU SADAYUKI , BABA SHINICHI
IPC分类号： H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module for improving cooling efficiency, and to provide a semiconductor power conversion device. SOLUTION: The power semiconductor module is provided with: a first semiconductor element including a first switching element 41a and configuring one arm; a second semiconductor element including a second switching element 41b and configuring the other arm; a first conductor 61 connected to the positive pole side of the first semiconductor element; a second conductor 62 connected to the negative pole side of the second semiconductor element; and a third conductor 63 disposed between the first conductor and the second conductor and connected to the negative pole side of the first semiconductor element and the positive pole side of the second semiconductor element. The first switching element and the second switching element are disposed asymmetrically with respect to the central axis line of the third conductor. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高冷却效率的功率半导体模块，并提供半导体功率转换装置。解决方案：功率半导体模块设置有：第一半导体元件，包括第一开关元件41a和配置一个臂; 第二半导体元件，包括第二开关元件41b并构成另一个臂; 连接到第一半导体元件的正极侧的第一导体61; 连接到第二半导体元件的负极侧的第二导体62; 以及设置在第一导体和第二导体之间并连接到第一半导体元件的负极侧和第二半导体元件的正极侧的第三导体63。第一开关元件和第二开关元件相对于第三导体的中心轴线非对称地设置。版权所有（C）2010，JPO＆INPIT

35. 发明专利

JP2009148079A Inverter device 有权
标题翻译：逆变器装置
公开(公告)号：JP2009148079A
公开(公告)日：2009-07-02
申请号：JP2007322935
申请日：2007-12-14
申请人： Toshiba Corp , 株式会社東芝
发明人： HASEGAWA RYUTA , MORIKAWA RYUICHI , OBE TOSHIHARU
IPC分类号： H02P27/06 , H02M7/48
CPC分类号： H02P29/68 , B60L3/003 , B60L15/20 , B60L2240/423 , B60L2240/525 , B60W10/08 , H02M2001/327 , Y02T10/645 , Y02T10/72 , Y02T10/7275
摘要： PROBLEM TO BE SOLVED: To improve operator's comfort in operation and simplify control by minimizing a torque limitation amount for preventing an increase in temperature of a switching element and by increasing the power density of an inverter by improving the conducting capability. SOLUTION: A torque limiting section for limiting a torque command value of a motor so that the temperature of the switching element may be suppressed to the upper limit value of the element or below includes a torque suppression means for determining a torque suppression value for suppressing the torque of the motor based on the temperature of the switching element; a torque suppression relaxation means for determining a torque suppression relaxation value for relaxing the torque suppression value based on an integral value of a deviation of the temperature of the switching element from the upper limit temperature of the element; a first subtractor for determining a torque limitation value by subtracting the torque suppression relaxation value from the torque suppression value; and a second subtractor for determining a limit torque command value by subtracting the torque limitation value from the torque command value and outputting the limit torque command value to a gate generating section. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提高操作员的操作舒适性，并且通过最小化用于防止开关元件的温度升高的转矩限制量以及通过提高导通能力来提高逆变器的功率密度来简化控制。解决方案：用于限制电动机的转矩指令值的转矩限制部分，使得开关元件的温度可以被抑制到元件或更低元件的上限值包括用于确定转矩抑制值的转矩抑制装置用于基于开关元件的温度抑制电动机的转矩; 扭矩抑制松弛装置，用于基于所述开关元件的温度与所述元件的上限温度的偏差的积分值来确定用于松弛所述转矩抑制值的转矩抑制弛豫值; 第一减法器，用于通过从转矩抑制值减去转矩抑制松弛值来确定转矩限制值; 以及第二减法器，用于通过从所述转矩指令值减去所述转矩限制值并且将所述极限转矩指令值输出到门产生部分来确定极限转矩指令值。版权所有（C）2009，JPO＆INPIT

36. 发明专利

JP2007068302A Power semiconductor device and semiconductor power converter 有权
标题翻译：功率半导体器件和半导体电源转换器
公开(公告)号：JP2007068302A
公开(公告)日：2007-03-15
申请号：JP2005249679
申请日：2005-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： OBE TOSHIHARU , TADA NOBUMITSU , MORIKAWA RYUICHI , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H02M7/515 , H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small power semiconductor device and a semiconductor power converter that have their cooling capability significantly enhanced and are excellent in manufacturability. SOLUTION: The power semiconductor device includes: multiple first semiconductor chips 171, 181 that construct an upper arm in one phase; multiple second semiconductor chips 174, 184 that construct a lower arm in one phase; a first conductor 11 joined with the positive poles of the first semiconductor chips; a second conductor 12 joined with the negative poles of the second semiconductor chips; a third conductor 13 joined with the negative poles of the first semiconductor chips and the positive poles of the second semiconductor chips; and heat dissipation means 15 that dissipates heat from the first semiconductor chips and the second semiconductor chips. The first conductor 11, second conductor 12, third conductor 13, first semiconductor chips, and second semiconductor chips are so disposed that the bond areas between the first semiconductor ships and second semiconductor chips and the first conductor 11 to the third conductor 13 are not parallel with the surface of the heat radiating means 15. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够显着提高其冷却能力并且制造性优异的小功率半导体器件和半导体功率转换器。解决方案：功率半导体器件包括：在一相中构造上臂的多个第一半导体芯片171,181; 在第一相中构造下臂的多个第二半导体芯片174,184; 与第一半导体芯片的正极连接的第一导体11; 与第二半导体芯片的负极连接的第二导体12; 与第一半导体芯片的负极和第二半导体芯片的正极连接的第三导体13; 以及从第一半导体芯片和第二半导体芯片散热的散热装置15。第一导体11，第二导体12，第三导体13，第一半导体芯片和第二半导体芯片被布置成使得第一半导体船舶与第二半导体芯片之间的接合区域与第一导体11至第三导体13之间的接合区域不平行与散热装置15的表面。（C）2007，JPO＆INPIT

37. 发明专利

JP2007042796A Power semiconductor device and inverter equipment 审中-公开
标题翻译：功率半导体器件和逆变器设备
公开(公告)号：JP2007042796A
公开(公告)日：2007-02-15
申请号：JP2005224231
申请日：2005-08-02
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter equipment of a small size capable of reducing inductance that depends on wiring in a power semiconductor device, to efficiently suppress the rise of a temperature caused by energization. SOLUTION: A positive electrode terminal 38 on which a positive pole of DC power supply is applied is electrically connected by way of a positive-side conductor 51, first conductor 27, IGBTs191A-191D, diodes 201A-201C, and an AC output conductor 29 in this order. A negative electrode terminal 39 on which a negative pole is applied is electrically connected by way of a negative side conductor 30, IGBTs192A-192D, diodes 202A-202C, a second conductor 28, and an AC output conductor 29 in this order. A cooling device 24 is covered with an insulating resin sheet 25 at its upper surface on which devices or the like are mounted for cooling. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了有效地抑制由通电引起的温度升高，提供能够减小依赖于功率半导体器件中的布线的电感的小尺寸的逆变器设备。
解决方案：施加有直流电源的正极的正极端子38通过正极导体51，第一导体27，IGBT191A-191D，二极管201A-201C和AC 输出导体29。通过负极导体30，IGBT192A-192D，二极管202A-202C，第二导体28和AC输出导体29依次电连接负极的负极端子39。冷却装置24在其上表面安装有绝缘树脂片25，其上安装有装置等用于冷却。版权所有（C）2007，JPO＆INPIT

38. 发明专利

JP2006303226A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006303226A
公开(公告)日：2006-11-02
申请号：JP2005123622
申请日：2005-04-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , TADA NOBUMITSU , NINOMIYA TAKESHI , HIRAMOTO HIROYUKI
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48472 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability having outstanding electrical characteristics and outstanding heat characteristics. SOLUTION: A sheet-like heat dissipation insulator 12 is interposed between a heat sink 102 and a mounting conductor 13 in which a semiconductor element 106 is arranged, to integrate the assembly with an insulating seal 15 by a resin sealing means 11, and mounted in a cooler 103 through a conductor 14. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的电气特性和优异的热特性的高可靠性的半导体器件。解决方案：散热片102和布置有半导体元件106的安装导体13之间插入片状散热绝缘体12，通过树脂密封装置11将组件与绝缘密封件15一体化，并通过导体14安装在冷却器103中。版权所有（C）2007，JPO＆INPIT

39. 发明专利

JP2005347561A Power semiconductor module and power conversion apparatus 有权
标题翻译：功率半导体模块和功率转换器
公开(公告)号：JP2005347561A
公开(公告)日：2005-12-15
申请号：JP2004166033
申请日：2004-06-03
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , OBE TOSHIHARU , SEKIYA HIRONORI , HAGIWARA KEIZO , NIITOME MASAKAZU
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a miniaturized and reliable power semiconductor module and a power conversion apparatus in which inductance parasitic to wiring is small, generated surge voltage is high and electrifiable voltage is high. SOLUTION: The power semiconductor module 12 mounts a switching chip 43 and a diode chip 44 on the surface of the insulating substrate 40 and has a plurality of insulating substrates 40, housed in a common case 4 to form bridge constitution. P side wiring and n side wiring for connecting among the insulating substrates 40 are respectively provided with plate-like main conductors 5a, 6a which are mutually insulated and formed like lamination, and band-like sub-conductors 5b, 6b formed on the ends of the main conductors 5a, 6a which are mutually insulated and formed like lamination. The ends of both the sub-conductors 5b, 6b are respectively constituted as external connection terminals P2, N2. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种小型化和可靠的功率半导体模块和其中寄生于布线的电感小的功率转换装置，产生的浪涌电压高并且充电电压高。解决方案：功率半导体模块12将开关芯片43和二极管芯片44安装在绝缘基板40的表面上，并且具有多个绝缘基板40，容纳在公共壳体4中以形成桥结构。在绝缘基板40之间连接的P侧布线和n侧布线分别设置有相互绝缘并形成为类似层叠的板状主导体5a，6a，并且形成在端部的端部的带状分导体5b，6b 主导体5a，6a相互绝缘并形成为层叠。两个分导体5b，6b的端部分别构成外部连接端子P2，N2。版权所有（C）2006，JPO＆NCIPI

40. 发明专利

JP2005252001A Module type semiconductor device 审中-公开
标题翻译：模块型半导体器件
公开(公告)号：JP2005252001A
公开(公告)日：2005-09-15
申请号：JP2004060647
申请日：2004-03-04
申请人： Toshiba Corp , 株式会社東芝
发明人： KARASAWA MASARU , OBE TOSHIHARU
IPC分类号： H01L23/40 , H01L23/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To propose a module type semiconductor device with high reliability by improving the lifetime of a wiring connecting part even in the case that it is operated in a temperature higher than a convensional one, or used in a high temperature environment. SOLUTION: Supporting posts 20 are set up at sides of a semiconductor chip 11. A plate-like conductor 18 with an elastic force is bridged and fixed to each of the electrodes of the semiconductor chip 11 with energized elasticity, so as to pressure-contact the electrodes and the conductor 18. COPYRIGHT: (C)2005,JPO&NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式