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31. 发明公开

EP2656383A1 SIMULTANEOUS WAFER BONDING AND INTERCONNECT JOINING 有权
标题翻译：法同时晶片键合，并连接
公开(公告)号：EP2656383A1
公开(公告)日：2013-10-30
申请号：EP11713628.3
申请日：2011-04-01
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L21/98 , H01L25/065
CPC分类号： H01L25/00 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04026 , H01L2224/05023 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05186 , H01L2224/0519 , H01L2224/05568 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/0613 , H01L2224/06131 , H01L2224/06135 , H01L2224/06505 , H01L2224/116 , H01L2224/13023 , H01L2224/13082 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/136 , H01L2224/16146 , H01L2224/16148 , H01L2224/16235 , H01L2224/16238 , H01L2224/276 , H01L2224/29023 , H01L2224/29082 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/32148 , H01L2224/32238 , H01L2224/73103 , H01L2224/81191 , H01L2224/81193 , H01L2224/8123 , H01L2224/81815 , H01L2224/8183 , H01L2224/83191 , H01L2224/83193 , H01L2224/8323 , H01L2224/83815 , H01L2224/8383 , H01L2224/9202 , H01L2224/9221 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/0002 , H01L2924/01029 , H01L2924/09701 , H01L2924/14 , H01L2924/35 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2224/05552 , H01L2924/00012 , H01L2924/00
摘要： Disclosed are a microelectronic assembly of two elements and a method of forming same. A microelectronic element includes a major surface, and a dielectric layer and at least one bond pad exposed at the major surface. The microelectronic element may contain a plurality of active circuit elements. A first metal layer is deposited overlying the at least one bond pad and the dielectric layer. A second element having a second metal layer deposited thereon is provided, and the first metal layer is joined with the second metal layer. The assembly may be severed along dicing lanes into individual units each including a chip.

32. 发明公开

EP2649639A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 有权
标题翻译：高密度三维集成电容器
公开(公告)号：EP2649639A1
公开(公告)日：2013-10-16
申请号：EP11738898.3
申请日：2011-07-14
申请人： Tessera, Inc.
发明人： MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A capacitor 340 includes a substrate 320 having a first surface 321, a second surface 322 remote from the first surface, and a through opening 330 extending between the first and second surfaces, first and second metal elements 360, 370, and a capacitor dielectric layer 380 separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element 360 is exposed at the first surface 321 and extends into the through opening 330. The second metal element 370 is exposed at the second surface 322 and extends into the through opening 330. The first and second metal elements 360, 370 are electrically connectable to first and second electric potentials. The capacitor dielectric layer 380 has an undulating shape.
摘要翻译：电容器340包括具有第一表面321，远离第一表面的第二表面322以及在第一和第二表面之间延伸的通孔330的衬底320，第一和第二金属元件360,370以及电容器介电层 380至少在通孔内将第一和第二金属元件彼此分开并绝缘。第一金属元件360在第一表面321处暴露并延伸到通孔330中。第二金属元件370在第二表面322处暴露并延伸到通孔330中。第一和第二金属元件360,370是可电连接到第一和第二电位。电容器介电层380具有起伏形状。

33. 发明公开

EP4102585A2 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-实审
公开(公告)号：EP4102585A2
公开(公告)日：2022-12-14
申请号：EP22187946.3
申请日：2011-12-09
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L49/02 , H01L21/768 , H01L23/48
摘要： A component 10 includes a substrate 20 and a capacitor 40. The substrate 20 can have first and second surfaces 21, 22 and an opening 30 extending from the first surface. The capacitor 40 can include first, second, third, and fourth conductive plates 61, 62, 71, 72, each plate extending along an inner surface 31 of the opening 30. The capacitor 40 can include first and second electrodes 163, 164 exposed at first and second spaced apart locations, and third and fourth electrodes 173, 174 exposed at third and fourth spaced apart locations. The third plate 71 can overlie the first plate 61 and can be separated therefrom by a first dielectric layer 81. The second plate 62 can overlie the third plate 71 and can be separated therefrom by a second dielectric layer 82. The fourth plate 72 can overlie the second plate 62 and can be separated therefrom by a third dielectric layer 83.

34. 发明公开

EP2649643A2 COMPLIANT INTERCONNECTS IN WAFERS 审中-公开
标题翻译：有晶片柔顺链接
公开(公告)号：EP2649643A2
公开(公告)日：2013-10-16
申请号：EP11802829.9
申请日：2011-12-07
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L23/485 , H01L25/065 , H01L21/60 , H01L23/31
CPC分类号： H01L21/76898 , H01L23/3171 , H01L23/481 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/02123 , H01L2224/0215 , H01L2224/0311 , H01L2224/0332 , H01L2224/03466 , H01L2224/03602 , H01L2224/0401 , H01L2224/05009 , H01L2224/05013 , H01L2224/05014 , H01L2224/05015 , H01L2224/05022 , H01L2224/05073 , H01L2224/05186 , H01L2224/05191 , H01L2224/05548 , H01L2224/05551 , H01L2224/05552 , H01L2224/05555 , H01L2224/05564 , H01L2224/05567 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/05578 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/06181 , H01L2225/06513 , H01L2225/06527 , H01L2225/06544 , H01L2225/06548 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/15165 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2224/81805 , H01L2924/06
摘要： A microelectronic unit 12 includes a substrate 20 and an electrically conductive element 40. The substrate 20 can have a CTE less than 10 ppm/°C, a major surface 21 having a recess 30 not extending through the substrate, and a material 50 having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element 40 can include a joining portion 42 overlying the recess 30 and extending from an anchor portion 41 supported by the substrate 20. The joining portion 42 can be at least partially exposed at the major surface 21 for connection to a component 14 external to the microelectronic unit 12.

35. 发明公开

EP2649640A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 有权
标题翻译：高密度三维集成电容器
公开(公告)号：EP2649640A1
公开(公告)日：2013-10-16
申请号：EP11813468.3
申请日：2011-12-09
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48 , H01L23/64
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A component (10) includes a substrate (20) and a capacitor (40). The substrate (20) can have first and second surfaces (21, 22) and an opening (30) extending from the first surface. The capacitor (40) can include first, second, third, and fourth conductive plates (61, 62, 71, 72), each plate extending along an inner surface (31) of the opening (30). The capacitor (40) can include first and second electrodes (163, 164) exposed at first and second spaced apart locations, and third and fourth electrodes (173, 174) exposed at third and fourth spaced apart locations. The third plate (71) can overlie the first plate (61) and can be separated therefrom by a first dielectric layer (81). The second plate (62) can overlie the third plate (71) and can be separated therefrom by a second dielectric layer (82). The fourth plate (72) can overlie the second plate (62) and can be separated therefrom by a third dielectric layer (83).

36. 发明公开

EP4102585A3 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-实审
公开(公告)号：EP4102585A3
公开(公告)日：2023-03-22
申请号：EP22187946.3
申请日：2011-12-09
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H10N97/00 , H01L21/768 , H01L23/48
摘要： A component 10 includes a substrate 20 and a capacitor 40. The substrate 20 can have first and second surfaces 21, 22 and an opening 30 extending from the first surface. The capacitor 40 can include first, second, third, and fourth conductive plates 61, 62, 71, 72, each plate extending along an inner surface 31 of the opening 30. The capacitor 40 can include first and second electrodes 163, 164 exposed at first and second spaced apart locations, and third and fourth electrodes 173, 174 exposed at third and fourth spaced apart locations. The third plate 71 can overlie the first plate 61 and can be separated therefrom by a first dielectric layer 81. The second plate 62 can overlie the third plate 71 and can be separated therefrom by a second dielectric layer 82. The fourth plate 72 can overlie the second plate 62 and can be separated therefrom by a third dielectric layer 83.

37. 发明授权

EP2647044B1 ASSEMBLY OF STACKED MICROELECTRONIC COMPONENTS HAVING THROUGH-SILICON VIAS, AND CORRESPONDING METHOD OF MANUFACTURE 有权
公开(公告)号：EP2647044B1
公开(公告)日：2020-08-05
申请号：EP11711724.2
申请日：2011-03-23
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/768 , H01L23/31 , H01L23/48 , H01L25/065

38. 发明公开

EP2647046A1 STACKED MICROELECTRONIC ASSEMBLY HAVING INTERPOSER CONNECTING ACTIVE CHIPS 有权
标题翻译： GESTAPELTE MIKROELEKTRONISCHE ANORDNUNG MITZWISCHENSTÜCKENZUR VERBINDUNG VON AKTIVEN CHIPS
公开(公告)号：EP2647046A1
公开(公告)日：2013-10-09
申请号：EP11799219.8
申请日：2011-12-02
申请人： Tessera, Inc.
发明人： HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L25/065 , H01L23/48 , H01L25/16
摘要： A microelectronic assembly can include first and second microelectronic elements each embodying active semiconductor devices adjacent a front surface thereof, and having an electrically conductive pad exposed at the respective front surface. An interposer of material having a CTE less than 10 ppm/° C. has first and second surfaces attached to the front surfaces of the respective first and second microelectronic elements, the interposer having a second conductive element extending within an opening in the interposer. First and second conductive elements extend within openings extending from the rear surface of a respective microelectronic element of the first and second microelectronic elements towards the front surface of the respective microelectronic element. In one example, one or more of the first or second conductive elements extends through the respective first or second pad, and the conductive elements contact the exposed portions of the second conductive element to provide electrical connection therewith.
摘要翻译：微电子组件可以包括第一和第二微电子元件，每个微电子元件各自体现邻近其前表面的有源半导体器件，并且具有在相应的前表面处暴露的导电焊盘。具有小于10ppm /℃的CTE的材料的插入件具有附接到相应的第一和第二微电子元件的前表面的第一和第二表面，所述插入件具有在插入件的开口内延伸的第二导电元件。第一和第二导电元件在从第一和第二微电子元件的相应微电子元件的后表面延伸到相应微电子元件的前表面的开口内延伸。在一个示例中，第一或第二导电元件中的一个或多个延伸穿过相应的第一或第二焊盘，并且导电元件接触第二导电元件的暴露部分以提供与其的电连接。

39. 发明公开

EP2647044A1 MICROELECTRONIC ASSEMBLY WITH PLURAL STACKED ACTIVE CHIPS HAVING THROUGH - SILICON VIAS FORMED IN STAGES 有权
标题翻译：在阶段中，与SILIZIUMDURCHKONTAKTIERUNGEN多个活动堆叠芯片微电子器件
公开(公告)号：EP2647044A1
公开(公告)日：2013-10-09
申请号：EP11711724.2
申请日：2011-03-23
申请人： Tessera, Inc.
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L23/48 , H01L25/065
摘要： A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.

40. 发明公开

EP2213148A2 ROBUST MULTI-LAYER WIRING ELEMENTS AND ASSEMBLIES WITH EMBEDDED MICROELECTRONIC ELEMENTS 审中-公开
标题翻译：强大的多层布线元件和组件嵌入式微型电子元件
公开(公告)号：EP2213148A2
公开(公告)日：2010-08-04
申请号：EP08837045.7
申请日：2008-10-08
申请人： Tessera, Inc.
发明人： HABA, Belgacem , OGANESIAN, Vage , ENDO, Kimitaka
IPC分类号： H05K3/46 , H01L23/12 , H01L23/48
CPC分类号： H01L21/486 , H01L21/4857 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L2224/24226 , H01L2225/06524 , H01L2225/06541 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H05K1/185 , H05K3/0038 , H05K3/4038 , H05K3/4647 , H05K3/4652 , H05K2201/0355 , H05K2201/0361 , H05K2201/0382 , H05K2201/096 , H05K2203/0384 , H05K2203/0733 , H05K2203/1189 , H01L2924/00
摘要： An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.

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