专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明专利

JP2008021926A Method for forming semiconductor layer of compound of group iii-v, and method for manufacturing semiconductor light element 审中-公开
标题翻译：用于形成III-V族化合物的半导体层的方法和制造半导体光元件的方法
公开(公告)号：JP2008021926A
公开(公告)日：2008-01-31
申请号：JP2006194477
申请日：2006-07-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： DOI HIDEYUKI
IPC分类号： H01L21/205 , H01L33/06 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor layer of compounds of group III-V by which the composition ratio of N in the semiconductor layer of compounds of group III-V can be uniformized in the direction of its thickness, and to provide a method for manufacturing a semiconductor light element. SOLUTION: The method for forming the semiconductor layer of compounds of group III-V includes a process S3 wherein a semiconductor layer 5 of compounds of group III-V including group III elements, arsenic elements, and nitrogen elements by supplying a group III material gas G1 including group III elements, an arsenic material gas G2 including arsenic elements, and a nitrogen material gas G3 including arsenic elements to a semiconductor layer 3 of compounds of group III-V including group III elements and arsenic elements. The process S3 includes a process S31 wherein the arsenic material gas G2 of supply quantity F1 is supplied to the semiconductor layer 3 of compounds of group III-V before starting supply of the nitrogen material gas G3, and a process S32 wherein the supply quantity of the arsenic material gas G2 is varied during a period from the start of supply of the nitrogen material gas G3 until a predetermined time elapses. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成III-V族化合物的半导体层的方法，其中III-V族化合物的半导体层中的N的组成比可以沿其方向均匀化并提供制造半导体光元件的方法。解决方案：用于形成III-V族化合物的半导体层的方法包括方法S3，其中通过提供基团的组中包含III族元素，砷元素和氮元素的III-V族化合物的半导体层5 III族材料气体G1，包含砷元素的砷材料气体G2和包含砷元素的氮材料气体G3到包括III族元素和砷元素的III-V族化合物的半导体层3。处理S3包括在开始供应氮气气体G3之前将供给量F1的砷材料气体G2供给到III-V族化合物的半导体层3的处理S31，以及其中供给量在从氮原料气体G3的供给开始到经过规定时间的期间，砷物质气体G2变化。版权所有（C）2008，JPO＆INPIT

32. 发明专利

JP2007014910A Exhaust gas treatment apparatus, maintenance process of medicament tube and exhaust gas treatment apparatus 审中-公开
标题翻译：排气处理设备，医药管道和排气处理设备的维护过程
公开(公告)号：JP2007014910A
公开(公告)日：2007-01-25
申请号：JP2005200684
申请日：2005-07-08
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： DOI HIDEYUKI , ISHIZUKA TAKASHI
IPC分类号： B01D53/34 , B01D53/81
摘要： PROBLEM TO BE SOLVED: To provide an exhaust gas treatment apparatus capable of preventing an occurrence of an oxidation reaction in the replacement work of a medicament tube, and a maintenance process of the medicament tube and the exhaust gas treatment apparatus. SOLUTION: The exhaust gas treatment apparatus comprises a first pipe 13, a medicament tube 5 which is detachably connected to the first pipe 13 and contains a medicament for removing a reactant of an oxygen-containing gas and an exhaust gas inflowing from the first pipe 13, and a second pipe 17 which is detachably connected to the medicament tube 5 and flows a gas outflowing from the medicament tube 5, wherein the medicament tube 5 includes a first valve 5a for switching an inflow path of a gas, a tube body 5c which contains the medicament for adsorbing the reactant of the oxygen-containing gas and the exhaust gas inflowing through the first valve 5a, and a second valve 5b for switching an outflow path of the gas outflowing from the tube body 5c to the second pipe 17, the first pipe 13 includes a third valve 13a, and the second pipe 17 includes a fourth valve 17a. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止在药剂管的更换作业中发生氧化反应的废气处理装置，以及药物管和废气处理装置的维护处理。解决方案：废气处理装置包括第一管13，药物管5，其可拆卸地连接到第一管13，并且包含用于从含氧气体和/ 第一管13和第二管17，其可拆卸地连接到药物管5并流出从药物管5流出的气体，其中药物管5包括用于切换气体的流入路径的第一阀5a，其包含用于吸附含氧气体的反应物和通过第一阀5a流入的废气的药剂;以及第二阀5b，其将从管体5c流出的气体的流出路径切换到第二管道如图17所示，第一管13包括第三阀13a，第二管17包括第四阀17a。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式