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    • 36. 发明授权
    • MEMS resonators and method for manufacturing MEMS resonators
    • MEMS谐振器和制造MEMS谐振器的方法
    • US06734762B2
    • 2004-05-11
    • US09828431
    • 2001-04-09
    • Kenneth D. CornettFeng Niu
    • Kenneth D. CornettFeng Niu
    • H03H946
    • H03H3/0072H03H3/007H03H9/0023
    • A first type of MEMS resonator adapted to be fabricated on a SOI wafer is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Overtone versions of the resonators that provide for differential input and output signal coupling are described. In particular resonators suited for differential coupling that are physically symmetric as judged from center points, and support anti-symmetric vibration modes are provided. Such resonators are robust against signal noise caused by jarring. The MEMS resonators taught by the present invention are suitable for replacing crystal oscillators, and allowing oscillators to be integrated on a semiconductor chip. An oscillator using the MEMS resonator is also provided.
    • 提供了适于制造在SOI晶片上的第一类MEMS谐振器。 教导了使用深沟槽蚀刻制造并占据半导体芯片的小面积的第二类型的MEMS谐振器。 描述了提供差分输入和输出信号耦合的谐振器的Overtone版本。 特别地,适用于从中心点判断为物理对称的差动耦合的谐振器,并且支持反对称振动模式。 这种谐振器对于由振动引起的信号噪声是鲁棒的。 由本发明教导的MEMS谐振器适用于替代晶体振荡器,并且允许将振荡器集成在半导体芯片上。 还提供了使用MEMS谐振器的振荡器。
    • 37. 发明授权
    • Dispersive surface antenna
    • 分散天线
    • US06445348B1
    • 2002-09-03
    • US09579604
    • 2000-05-26
    • Danny O. McCoyFeng Niu
    • Danny O. McCoyFeng Niu
    • H01Q124
    • H01Q9/42H01Q1/241H01Q1/242H01Q9/30H01Q9/32
    • Dispersive surface antenna structures (300, 700) provide improved selectivity and increased control over bandwidth. Antenna structures (300, 700) include a wraparound piece of conductive material located perpendicular to a ground plane (304, 704). Ground posts (302, 702) extend up from the ground base (304) and capacitively couple to a front conductive surface (301, 701) of the antennas (300, 700). First and second conductive back surfaces (305, 306), (705, 706) are capacitively coupled across a gap (307, 707) along the back of the antennas (300, 700). The size, width, and location of the gap (307, 707) along with the ground posts (302, 702) provide increased control over antenna performance.
    • 分散表面天线结构(300,700)提供了改进的选择性和增加的对带宽的控制。 天线结构(300,700)包括垂直于接地平面(304,704)定位的环绕导电材料片。 接地柱(302,702)从地基(304)向上延伸,并电容耦合到天线(300,700)的前导电表面(301,701)。 第一和第二导电后表面(305,306)(705,706)沿着天线(300,700)的背面跨越间隙(307,707)电容耦合。 间隙(307,707)的大小,宽度和位置以及接地柱(302,702)提供对天线性能的增加的控制。
    • 38. 发明授权
    • Directional coupler and method of forming same
    • 定向耦合器及其形成方法
    • US5689217A
    • 1997-11-18
    • US616138
    • 1996-03-14
    • Wang-Chang Albert GuFeng Niu
    • Wang-Chang Albert GuFeng Niu
    • H01P5/18
    • H01P5/187
    • A multi-layer substrate (500) includes a segmented stripline (602) which is formed of multi-layered segment (514, 522, 516) and is proximately coupled to a second stripline (604) to form a directional coupler. The directional coupler (500) provides similar input and output port impedances while allowing for independent control of the coupling. The overall length of the coupler is held constant while individual lengths of the segments of the segmented stripline (602) and the second stripline (604) are increased and decreased to independently control the coupling while maintaining the similar port impedances.
    • 多层衬底(500)包括由多层片段(514,522,516)形成的分段带状线(602),并且近似地耦合到第二带状线(604)以形成定向耦合器。 定向耦合器(500)提供类似的输入和输出端口阻抗,同时允许独立控制耦合。 耦合器的总长度保持恒定,而分段带状线(602)和第二带状线(604)的段的单独长度增加和减小,以独立地控制耦合,同时保持类似的端口阻抗。
    • 39. 发明申请
    • METHOD OF FORMING VERY REACTIVE METAL LAYERS BY A HIGH VACUUM PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM
    • 通过高真空等离子体增强原子层沉积系统形成非常反应的金属层的方法
    • US20160083842A1
    • 2016-03-24
    • US14492269
    • 2014-09-22
    • Feng NiuPeter Chow
    • Feng NiuPeter Chow
    • C23C16/455C23C16/44C23C16/18
    • C23C16/45536C23C16/18C23C16/4402
    • This invention provides a method and a system to deposit a thin layer of very reactive elemental metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The thin metal layers are formed by sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. A robust high vacuum reactor chamber equipped with an anti-corrosion turbo pump and a high vacuum load lock are required for reducing contaminant gases such as O2, H2O, and CO2, and for increasing hydrogen plasma efficiency.
    • 本发明提供了一种通过等离子体增强原子层沉积(PEALD)沉积非常反应性元素金属的薄层的方法和系统。 选自高电中性元素的非常活泼的金属包括碱土金属,III族金属和一些过渡金属和稀土金属。 通过在每个脉冲步骤之间以脉冲或连续流动的惰性吹扫气体顺序脉冲将上述含金属有机金属前体中的一种和作为还原剂的氢等离子体顺序地脉冲至包含基底表面的反应室中而形成薄金属层。 需要配备防腐涡轮泵和高真空负载锁的坚固的高真空反应室,以减少诸如O2,H2O和CO2之类的污染气体,并提高氢等离子体的效率。